CN-122001340-A - Compact Marx generator based on impact ionization semiconductor device

CN122001340ACN 122001340 ACN122001340 ACN 122001340ACN-122001340-A

Abstract

The invention discloses a compact Marx generator based on an impact ionization semiconductor device, and relates to the technical field of pulse power technology and power semiconductor device crossing. The energy storage device comprises N levels of sub Marx generators which are sequentially cascaded, wherein each sub Marx generator comprises an impact ionization semiconductor device, a first charging isolation element, a second charging isolation element, an energy storage unit, a first grounding capacitor and a second grounding capacitor, the first end of each sub Marx generator of any level is respectively connected with the first end of the corresponding first charging isolation element, the first end of the corresponding first grounding capacitor and the first end of the corresponding energy storage unit, the second end of each impact ionization semiconductor device is grounded, the second end of each impact ionization semiconductor device is connected with the first end of the corresponding second charging isolation element, the second end of each second charging isolation element is respectively connected with the second end of the corresponding energy storage unit and the first end of the corresponding second grounding capacitor, and the second end of each second grounding capacitor is grounded. The compact Marx generator improves the safety of conduction.

Inventors

DING WEIDONG
YIN ZIQIANG
JIANG ZEBIN
SHI XINYU

Assignees

西安交通大学

Dates

Publication Date: 20260508
Application Date: 20260126

Claims (5)

1. The compact Marx generator based on the impact ionization semiconductor device is characterized by comprising N levels of sub Marx generators which are sequentially cascaded, wherein each sub Marx generator comprises an impact ionization semiconductor device, a first charging isolation element, a second charging isolation element, an energy storage unit, a first grounding capacitor and a second grounding capacitor; For the sub Marx generator of any stage, the first end of the impact ionization semiconductor device is respectively connected with the first end of the first charge isolation element, the first end of the first grounding capacitor and the first end of the energy storage unit, the second end of the first grounding capacitor is grounded, the second end of the impact ionization semiconductor device is connected with the first end of the second charge isolation element, the second end of the second charge isolation element is respectively connected with the second end of the energy storage unit and the first end of the second grounding capacitor, and the second end of the second grounding capacitor is grounded; The second end of the first charge isolation element of the first stage sub Marx generator is connected with a direct current high voltage power supply, and the second ends of the first charge isolation elements of other stage sub Marx generators are connected with the first charge isolation elements of the corresponding previous stage sub Marx generator; The impact ionization semiconductor devices in the first stage sub-Marx generator or the first few stages sub-Marx generators are conducted through a trigger pulse source, after the impact ionization semiconductor devices in any stage sub-Marx generator are conducted, the energy storage unit of the first stage charges the second grounding capacitor, the second grounding capacitor forms a fast front-edge overvoltage, the voltage is applied to two ends of the impact ionization semiconductor devices of the later stage after being divided by the two grounding capacitors of the later stage, the impact ionization semiconductor devices in the later stage sub-Marx generators are conducted, so that the impact ionization semiconductor devices in the whole compact Marx generator are conducted sequentially, and high-voltage high-current pulses are output on a load.
2. The compact Marx generator of claim 1, wherein the Marx generator comprises two triggering modes: The trigger pulse source adopted in the first trigger mode needs to meet the requirement of being capable of charging the reverse bias pn junction heavy current of the impact ionization semiconductor device so as to reach the impact ionization condition of the pn junction; The second triggering mode is to connect the compact Marx generator in series on the triggering pulse source, and through the overvoltage formed by the operation of the triggering pulse source, the impact ionization semiconductor devices at all levels in the compact Marx generator are sequentially broken down, and the triggering pulse source adopted by the second triggering mode needs to meet the conditions that the triggering pulse source has the same current carrying capacity as the compact Marx generator, has a sufficiently high amplitude and a sufficiently small front edge, and realizes the safe conduction of the impact ionization semiconductor devices in the compact Marx generator.
3. The compact type Marx generator of claim 1, wherein after the impact ionization semiconductor device of the front stage sub-Marx generator is triggered by the fast pulse output by the trigger pulse source, the potential at one end of the energy storage unit changes, and overvoltage is generated on the next stage impact ionization semiconductor device to cause the impact ionization conduction.
4. The compact Marx generator of claim 1, wherein the step-wise transferred fast pulse is divided by two capacitors to ground in each sub Marx generator to be applied mostly to both ends of the impact ionization semiconductor device, and wherein the impact ionization semiconductor device satisfies: ; Wherein, the Is the pulse voltage accumulated in m-1 stage, Is the charging voltage of the energy storage unit, Is the accumulated pulse voltage after the m-th stage switch is turned on, Is the attenuation coefficient of the pulse passing from m-1 to m.
5. The compact Marx generator of claim 1, characterized in that the impact ionization semiconductor device is a device comprising at least one pn junction, or the impact ionization semiconductor device is a device using a special junction built by doping gradient comprising a Schottky junction or NN + ; when the impact ionization semiconductor device is a bipolar device, the impact ionization semiconductor device is conducted through overvoltage between the two electrodes; When the impact ionization semiconductor device is a tripolar device, two poles are used and the other pole is suspended, or a trigger signal is generated by a front stage and applied to the trigger pole, and the impact ionization semiconductor device is conducted and operated under the simultaneous action of overvoltage between the trigger pole signal and the other two poles.

Description

Compact Marx generator based on impact ionization semiconductor device Technical Field The application relates to the technical field of pulse power technology and power semiconductor device crossing, in particular to a compact Marx generator based on an impact ionization semiconductor device. Background The main current development trend of pulse power technology is high peak power and high average power. The Marx generator is a classical circuit for generating high voltage pulses. Although the Marx generator based on the high-power gas switch can easily generate high-power pulses of hundreds of kilovolts to several megavolts and thousands of amperes to hundreds of kiloamperes, the Marx generator is limited by the defects of short service life, low repetition frequency and the like of the gas switch, and the Marx generator is difficult to meet the requirements of the future pulse power technical field on long-service life and heavy-frequency operation. The all-solid-state Marx generator adopting the semiconductor device can operate at the repeated frequency, has long service life and has wide application prospect. All-solid-state Marx generators currently employing semiconductor devices are evolving towards modularization, miniaturization and high frequency. All-solid-state Marx generators often employ fully-controlled semiconductor devices, and have the problems of limited power capacity, complex isolation driving circuits and the like. The Marx generator is formed by adopting the avalanche transistor without an isolation driving circuit, and the action speed is extremely high, but the power capacity is lower. Whichever semiconductor device is used, the problems of complex circuit, large number of devices, high equipment cost and the like are faced to realizing the repetition frequency and the high-power operation. Researchers have found that when a pn junction is reverse biased, sub-nanosecond conduction can be achieved under the triggering of a fast overvoltage pulse, and that this turn-on without gate control is known as a shocking ionization wave or a delayed ionization wave, and that shocking ionization semiconductor devices have been fabricated based on this special effect. The semiconductor device based on the impact ionization principle has great application prospect in theory, and is possible to replace a gas switch and an existing semiconductor device to become a main stream device of a future repetition frequency Marx generator. However, the safe working condition of the impact ionization semiconductor device is severe, the maximum rising rate of the overvoltage front edge is generally required to be more than 1 kV/ns, the overvoltage multiple is about 2 times of the rated breakdown voltage of the device, and the problem that the device is difficult to conduct safely exists in a Marx generator manufactured by adopting the impact ionization semiconductor device. Disclosure of Invention Based on this, it is necessary to provide a compact Marx generator based on impact ionization semiconductor devices in view of the above technical problems. The technical scheme adopted in the specification is as follows: the present specification provides a compact Marx generator based on impact ionization semiconductor devices, comprising: N-stage sequentially cascaded sub Marx generators, wherein each sub Marx generator comprises an impact ionization semiconductor device, a first charging isolation element, a second charging isolation element, an energy storage unit, a first grounding capacitor and a second grounding capacitor; For the sub Marx generator of any stage, the first end of the impact ionization semiconductor device is respectively connected with the first end of the first charge isolation element, the first end of the first grounding capacitor and the first end of the energy storage unit, the second end of the first grounding capacitor is grounded, the second end of the impact ionization semiconductor device is connected with the first end of the second charge isolation element, the second end of the second charge isolation element is respectively connected with the second end of the energy storage unit and the first end of the second grounding capacitor, and the second end of the second grounding capacitor is grounded; The second end of the first charge isolation element of the first stage sub Marx generator is connected with a direct current high voltage power supply, and the second ends of the first charge isolation elements of other stage sub Marx generators are connected with the first charge isolation elements of the corresponding previous stage sub Marx generator; The impact ionization semiconductor devices in the first stage sub-Marx generator or the first few stages sub-Marx generators are conducted through a trigger pulse source, after the impact ionization semiconductor devices in any stage sub-Marx generator are conducted, the energy storage unit of the first stage charges the second gro