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CN-122001355-A - Hybrid driving type electronic device

CN122001355ACN 122001355 ACN122001355 ACN 122001355ACN-122001355-A

Abstract

The invention provides a hybrid driving type electronic device, which comprises an electronic unit, an integrated circuit, a first transistor and a second transistor. The integrated circuit is used for providing a control signal. The first transistor has a first semiconductor, a first terminal electrically connected to a power source, a second terminal electrically connected to the electronic unit, and a first control terminal. The second transistor is provided with a second semiconductor, a third end, a fourth end and a second control end, wherein the third end is used for receiving a control signal, the fourth end is electrically connected to the first control end of the first transistor, and the second control end is used for receiving a switching signal. The first transistor has a first channel width-to-length ratio, the second transistor has a second channel width-to-length ratio, and a ratio of the first channel width-to-length ratio to the second channel width-to-length ratio is greater than or equal to 0.03 and less than or equal to 80.5.

Inventors

  • CHEN JIAYUAN
  • HUANG SHENGFENG
  • CAI ZONGHAN
  • LI GUANFENG

Assignees

  • 群创光电股份有限公司

Dates

Publication Date
20260508
Application Date
20241104

Claims (20)

  1. 1. A hybrid drive electronic device, comprising: An electronic unit; An integrated circuit for providing a control signal; A first transistor having a first semiconductor, a first terminal electrically connected to a power source, a second terminal electrically connected to the electronic unit, and a first control terminal The second transistor is provided with a second semiconductor, a third end, a fourth end and a second control end, wherein the third end is used for receiving the control signal, the fourth end is electrically connected to the first control end of the first transistor, and the second control end is used for receiving a switching signal; the first transistor has a first channel width-to-length ratio, the second transistor has a second channel width-to-length ratio, and a ratio of the first channel width-to-length ratio to the second channel width-to-length ratio is greater than or equal to 0.03 and less than or equal to 80.5.
  2. 2. The electronic device according to claim 1, wherein at least one of the first semiconductor and the second semiconductor is an oxide semiconductor.
  3. 3. The electronic device of claim 2, wherein the ratio of the first channel aspect ratio to the second channel aspect ratio is greater than or equal to 0.05 and less than or equal to 57.5.
  4. 4. The electronic device of claim 2, wherein the first semiconductor and the second semiconductor are both oxide semiconductors.
  5. 5. The electronic device of claim 4, wherein the ratio of the first channel aspect ratio to the second channel aspect ratio is greater than or equal to 0.2 and less than or equal to 17.3.
  6. 6. The electronic device of claim 1, wherein the first transistor has a first channel length, the second transistor has a second channel length, and the first channel length is greater than the second channel length.
  7. 7. The electronic device of claim 6, wherein a ratio of the first channel length to the second channel length is greater than or equal to 1.05 and less than or equal to 3.5.
  8. 8. The electronic device of claim 7, wherein the ratio of the first channel length to the second channel length is greater than or equal to 1.1 and less than or equal to 2.2.
  9. 9. The electronic device of claim 1, further comprising a metal oxide overlapping the first semiconductor, wherein the first semiconductor is an oxide semiconductor and is disposed between the first control terminal and the metal oxide.
  10. 10. The electronic device of claim 9, wherein the width of the metal oxide is greater than the width of the first semiconductor in a top view of the electronic device.
  11. 11. The electronic device of claim 9, further comprising a light shielding element overlapping the first semiconductor, wherein the metal oxide is disposed between the first semiconductor and the light shielding element.
  12. 12. The electronic device of claim 11, wherein the light shielding element directly contacts the metal oxide.
  13. 13. The electronic device of claim 11, wherein the width of the light shielding element is greater than the width of the metal oxide.
  14. 14. The electronic device of claim 9, wherein the first semiconductor has two openings, and the first control terminal is disposed between the two openings in a top view of the electronic device.
  15. 15. The electronic device as claimed in claim 1, further comprising: a first metal oxide overlapping the first semiconductor; A second metal oxide overlapping the second semiconductor; the first metal oxide has a first area, the second metal oxide has a second area, and the ratio of the first area to the second area is greater than or equal to 1.1 and less than or equal to 10.2.
  16. 16. The electronic device of claim 1, wherein the first control terminal and the first semiconductor overlap a first region, the second control terminal and the second semiconductor overlap a second region, the first region has a third area, the second region has a fourth area, and a ratio of the third area to the fourth area is greater than or equal to 1.2 and less than or equal to 7.6.
  17. 17. The electronic device of claim 1, further comprising a third transistor having a third control terminal electrically connected to the first control terminal, wherein a channel length of the first transistor is different from a channel length of the third transistor.
  18. 18. The electronic device of claim 1, wherein the electronic unit is a diode.
  19. 19. The electronic device of claim 1, wherein the electronic device has a first portion and a second portion, the first portion surrounds the second portion, and the first transistor and the integrated circuit are both located in the second portion.
  20. 20. The electronic device of claim 1, wherein the electronic device has a first portion and a second portion, the first portion surrounds the second portion, and the first transistor is located in the second portion and the integrated circuit is located in the first portion.

Description

Hybrid driving type electronic device Technical Field The present invention relates to an electronic device, and more particularly, to a hybrid driving electronic device. Background In the prior art, a plurality of transistors (transistors) are used to drive the electronic device in a hybrid manner, so as to adjust different items to achieve different functions, such as some transistors for adjusting voltage amplitude and some transistors for adjusting current frequency. However, if each group of pixels has a transistor circuit for pulse width modulation (Pulse Width Modulation, PWM) and pulse amplitude modulation (Pulse Amplitude Modulation, PAM), too many transistors occupy a huge space to improve resolution. It is a big consideration how to reduce the number of transistors to save space. Disclosure of Invention The invention aims to provide a hybrid drive type electronic device. The invention provides a hybrid driving type electronic device, which comprises an electronic unit, an integrated circuit, a first transistor and a second transistor. The integrated circuit is used for providing a control signal. The first transistor has a first semiconductor, a first terminal electrically connected to a power source, a second terminal electrically connected to the electronic unit, and a first control terminal. The second transistor is provided with a second semiconductor, a third end, a fourth end and a second control end, wherein the third end is used for receiving a control signal, the fourth end is electrically connected to the first control end of the first transistor, and the second control end is used for receiving a switching signal. The first transistor has a first channel width-to-length ratio, the second transistor has a second channel width-to-length ratio, and a ratio of the first channel width-to-length ratio to the second channel width-to-length ratio is greater than or equal to 0.03 and less than or equal to 80.5. Drawings Fig. 1 is a schematic diagram of an electronic device circuit according to an embodiment of the invention. Fig. 2A is a schematic diagram of an electronic device according to another embodiment of the invention. Fig. 2B is a schematic diagram of an electronic device according to another embodiment of the invention. Fig. 2C is a schematic diagram of an electronic device circuit according to another embodiment of the invention. Fig. 3A is a cross-sectional view of the electronic device of fig. 1. Fig. 3B is a top view of the transistor of fig. 3A. Fig. 3C is a schematic diagram of the driving transistor in fig. 3A. Fig. 4 is a top view of a transistor according to another embodiment of the invention. Fig. 5A is a top view of a drive transistor according to another embodiment of the present invention. Fig. 5B is a schematic diagram of a current curve of the driving transistor of fig. 5A. Fig. 6 is a cross-sectional view of an electronic device according to another embodiment of the invention. Fig. 7A is a schematic diagram of a circuit of an electronic device according to another embodiment of the invention. FIG. 7B is a cross-sectional view of an embodiment of the electronic device according to FIG. 7A. Fig. 7C is a cross-sectional view of another embodiment of the electronic device according to fig. 7A. Fig. 8A is a schematic diagram of a circuit of an electronic device according to another embodiment of the invention. Fig. 8B is a schematic diagram of an electronic device according to another embodiment of the invention. Fig. 9 is a cross-sectional view of the electronic device of fig. 8B. Fig. 10 is a schematic diagram of an electronic device according to another embodiment of the invention. Fig. 11 is a waveform diagram of an electronic device circuit according to an embodiment of the invention. Fig. 12 is a schematic diagram of a circuit of an electronic device according to another embodiment of the invention. Reference numerals illustrate 1, 2A, 2B, 2C, 6, 8A, 8B, 10-electronic devices; 11, 21, 83, 103-integrated circuit; VS, SW (1), SW (2), SW (3), VS 12-control signals; GL1-GL4, GL51, GL 52-control terminal, E1-E6, E81, E82-terminal, SCAN, G (1), G (2), G (3) -switching signal, TP, TP1, TP 2-SCAN transistor, TS, TS 2-switch transistor, TD, TD21, TD22, TD51, TD52, TD 12-drive transistor, VG-gate voltage, DL-data line, CP, CP1-CP 3-capacitance, EC 1-first terminal, EC 2-second terminal, id-current, 12, 23-electronic unit, 13, 22-pulse amplitude modulation circuit, PX-pixel, PVDD, PVSS, VA, VB-voltage, A1, A4-peripheral region, A2, A3, 86, 106-main region, C1, C2-conductor, D1-D3-drain region, demux-demultiplexer, T1-T14, TC1-TC 3-transistor, VDD_PWM, VSS_voltage, emi_n, VDD_PWM, emi_n (SP) and Vsn (P_n) Vsp_64/R (n), VSn (n) and VSn (n) V_n (n) V_n_n (n_P) P_n_n_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P_P, P_P_P_P, P_P_P, P_P_P, P, and, P_P_P_P_P, and, and, P_P_P, and, and,, and, TEST-signal, S-substrate, PC 1-e