CN-122001357-A - Driving and protecting circuit of IGBT module

CN122001357ACN 122001357 ACN122001357 ACN 122001357ACN-122001357-A

Abstract

The invention discloses a driving and protecting circuit of an IGBT module, and belongs to the technical field of engineering. The circuit comprises an optocoupler driving chip U1, a push-pull circuit and a protection circuit module, wherein the optocoupler driving chip U1 is used for receiving and isolating external driving signals, the push-pull circuit is connected with the output end of the optocoupler driving chip U1 and used for driving grids of IGBT, and the protection circuit module is respectively connected with the optocoupler driving chip U1, the push-pull circuit and the IGBT and used for realizing overvoltage and desaturation detection, miller clamping and soft turn-off functions. Compared with the traditional driving circuit, the driving circuit has the advantages of stable positive and negative voltages, strong driving capability, multiple protection functions and the like, and ensures the reliability and stability of driving the IGBT module.

Inventors

SHI GUOTAO
WANG ZHENPING
QIN ZHIBO
QIU SHICHENG
Si Yixin
BAI XUEJIE
WANG SHUO
LIU LICHENG
HAO LIUCHENG
WANG ZHIJUN
BAI CHANGYU
HE LIPENG
ZHANG HAO
XU DETAO
WU CHENGWEI

Assignees

平高集团有限公司

Dates

Publication Date: 20260508
Application Date: 20260127

Claims (8)

1. A drive and protection circuit for an IGBT module, comprising: The optocoupler driving chip U1 is used for receiving and isolating external driving signals; The push-pull circuit is connected with the PWM OUT output end of the optocoupler driving chip U1 and is used for driving the grid electrode of the IGBT; and the protection circuit module is respectively connected with the optocoupler driving chip U1, the push-pull circuit and the IGBT and is used for realizing overvoltage and desaturation detection, miller clamping and soft turn-off functions.
2. The IGBT module driving and protecting circuit according to claim 1, wherein the protecting circuit module includes: the overvoltage and desaturation detection unit is connected between the collector of the IGBT and the DESAT pin of the optocoupler driving chip U1; The miller CLAMP unit is connected between the CLAMP pin of the optocoupler driving chip U1 and the grid electrode of the IGBT; The soft turn-off unit is realized by a logic circuit in the optocoupler driving chip U1, the input end of the soft turn-off unit is connected to a DESAT pin of the optocoupler driving chip U1, and the output end of the soft turn-off unit controls the push-pull circuit through a FAULT# pin and output logic of the optocoupler driving chip U1.
3. The IGBT module driving and protecting circuit according to claim 2, wherein the overvoltage and desaturation detection unit includes a first diode D1 and a second diode D2 connected in series; the cathode of the second diode D2 is connected to the collector of the IGBT, the anode thereof is connected to the cathode of the first diode D1, and the anode of the first diode D1 is connected to the DESAT pin of the optocoupler driving chip U1.
4. The IGBT module driving and protecting circuit according to claim 4, wherein the overvoltage and desaturation detection unit further comprises a capacitor C2 and a zener diode ZDE1 which are connected in parallel, wherein one end of the capacitor C2 connected with the anode of the zener diode ZDE1 is grounded, and one end of the capacitor C2 connected with the cathode of the zener diode ZDE1 is connected with the anode of the first diode D1.
5. The IGBT module driving and protecting circuit according to claim 2, wherein the miller clamp unit includes a first resistor R2, a second resistor R3, and a first transistor Q1; one end of the first resistor R2 is connected to the output end CLAMP of the optocoupler driving chip U1, and the other end of the first resistor R2 is connected to the base electrode of the first triode Q1; One end of the second resistor R3 is connected between the base electrode and the emitter electrode of the first triode Q1, and the other end of the second resistor R3 is connected between the first resistor R2 and the base electrode of the first triode Q1; and the collector of the first triode Q1 is connected to the collector of a third triode Q3 in the push-pull circuit, and the emitter of the first triode Q is sequentially connected with the R6 and R7 intermediate circuits of the push-pull circuit and the grid electrode of the IGBT.
6. The IGBT module driving and protecting circuit according to claim 2, wherein the soft shutdown unit is configured to: When the DESAT pin detects that the collector and emitter voltages of the IGBT exceed a preset threshold, the FAULT# pin of the optocoupler driving chip U1 acts and controls a signal output by the FAULT# pin to the push-pull circuit to pull down driving pulses so as to slowly turn off the IGBT.
7. The IGBT module driving and protecting circuit according to claim 5, wherein the push-pull circuit includes a second transistor Q2 and a third transistor Q3; the second triode Q2 is an NPN transistor, the base electrode of the second triode Q is connected to the PWM OUT output end of the optocoupler driving chip U1 through a resistor R5, the collector electrode of the second triode Q is connected to the positive driving voltage end, and the emitter electrode of the second triode Q is connected to the grid electrode of the IGBT through a resistor R6; The third triode Q3 is a PNP transistor, the base electrode of the PNP transistor is commonly connected with the base electrode of the second triode Q2, the emitter electrode of the PNP transistor is connected to the grid electrode of the IGBT through a resistor R7, and the collector electrode of the PNP transistor is connected to the negative driving voltage end.
8. The IGBT module driving and protecting circuit according to claim 7, wherein the collector of the first transistor Q1 is connected to the push-pull circuit, and the emitter thereof is connected to the push-pull circuit and the gate of the IGBT in this order, and specifically comprising: The collector of the first triode Q1 is simultaneously connected with one end of a capacitor C1 and a negative driving voltage end in the push-pull circuit, and the other end of the capacitor C1 is connected with the base electrodes of the third triode Q3 and the second triode Q2; the collector electrode of the first triode Q1 is also connected with the resistor R5 through a resistor R4 and then commonly connected to the PWM OUT output end of the optocoupler driving chip U1; And the emitter of the first triode Q1 is connected with the resistors R6 and R7 and then commonly connected to the grid electrode of the IGBT.

Description

Driving and protecting circuit of IGBT module Technical Field The invention belongs to the technical field of engineering, relates to a driving circuit of a power switch tube, and particularly relates to a driving and protecting circuit of an IGBT module. The invention is applied to power electronic devices such as frequency converters, inverters and power supply systems in an expanded manner, and aims to improve the reliability of power devices. Background In power electronics, IGBTs are the main power switching devices, and the reliability of driving and protection of the IGBTs directly affects the reliability of the whole device, so many different driving circuits are presented in the IGBT driving industry. Most of the current IGBT module driving protection circuits are composed of an IGBT driving optocoupler TLP350/HCPL-3120 of TOSHIBA company and some peripheral circuits, the existing IGBT module driving circuits do not have protection circuits, if the IGBT is short-circuited, the circuits are directly damaged, new IGBT and driving are needed, and the anti-interference capability is poor. In addition, the choice of the voltage of the driving circuit is also critical for reliable operation of the driving circuit. The driving negative pressure of 9V can reduce the situation that the negative pressure spike exceeds 0V misleading during the turn-off. In summary, it can be seen that the IGBT is vulnerable to damage under abnormal conditions such as short circuit and overvoltage, and the driving voltage is unstable and the anti-interference capability is poor. Therefore, there is a need for an IGBT drive scheme that integrates multiple protection, has high drive capability, and is inexpensive. Disclosure of Invention In view of the above problems, the invention provides a driving circuit and a protection circuit for an IGBT module, which not only have the protection functions of various driving circuits, but also select proper driving voltages, so that the problems that the existing driving lacks a protection circuit, the IGBT is easy to burn, and the PCS energy storage converter runs abnormally can be solved. In order to achieve the above purpose, the present invention adopts the following technical scheme: The embodiment of the invention provides a driving and protecting circuit of an IGBT module, which comprises the following components: The optocoupler driving chip U1 is used for receiving and isolating external driving signals; The push-pull circuit is connected with the PWM OUT output end of the optocoupler driving chip U1 and is used for driving the grid electrode of the IGBT; and the protection circuit module is respectively connected with the optocoupler driving chip U1, the push-pull circuit and the IGBT and is used for realizing overvoltage and desaturation detection, miller clamping and soft turn-off functions. In one embodiment, the protection circuit module includes: the overvoltage and desaturation detection unit is connected between the collector of the IGBT and the DESAT pin of the optocoupler driving chip U1; The miller CLAMP unit is connected between the CLAMP pin of the optocoupler driving chip U1 and the grid electrode of the IGBT; The soft turn-off unit is realized by a logic circuit in the optocoupler driving chip U1, the input end of the soft turn-off unit is connected to a DESAT pin of the optocoupler driving chip U1, and the output end of the soft turn-off unit controls the push-pull circuit through a FAULT# pin and output logic of the optocoupler driving chip U1. In one embodiment, the overvoltage and desaturation detection unit comprises a first diode D1 and a second diode D2 connected in series; the cathode of the second diode D2 is connected to the collector of the IGBT, the anode thereof is connected to the cathode of the first diode D1, and the anode of the first diode D1 is connected to the DESAT pin of the optocoupler driving chip U1. In one embodiment, the overvoltage and desaturation detection unit further comprises a capacitor C2 and a zener diode ZDE1 which are connected in parallel, wherein one end of the capacitor C2 connected with the anode of the zener diode ZDE1 is grounded, and one end of the capacitor C2 connected with the cathode of the zener diode ZDE1 is connected with the anode of the first diode D1. In one embodiment, the miller clamp unit includes a first resistor R2, a second resistor R3, and a first transistor Q1; one end of the first resistor R2 is connected to the output end CLAMP of the optocoupler driving chip U1, and the other end of the first resistor R2 is connected to the base electrode of the first triode Q1; One end of the second resistor R3 is connected between the base electrode and the emitter electrode of the first triode Q1, and the other end of the second resistor R3 is connected between the first resistor R2 and the base electrode of the first triode Q1; and the collector of the first triode Q1 is connected to the collector of a third trio