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CN-122001481-A - Semiconductor device, optical module and electronic equipment

CN122001481ACN 122001481 ACN122001481 ACN 122001481ACN-122001481-A

Abstract

The application provides a semiconductor device, an optical module and electronic equipment, wherein the semiconductor device comprises a first following link, a first variable resistor and a current mirror, the current mirror comprises a first transistor and a first capacitor, a first end of the first transistor is coupled with an output end of the first following circuit, a second end of the first transistor is coupled with a grounding end, a third end of the first transistor is coupled with a first end of the first variable resistor, and the first capacitor is coupled between a second end of the first variable resistor and the grounding end. In this way, the damping coefficient of the semiconductor device can be adjusted under the action of the first variable resistor, so that the semiconductor device has a broadband peaking function. In addition, since the gain of the semiconductor device is one, the bandwidth improved by the semiconductor device is necessarily superior to that of the differential amplifying circuit when the gain and the bandwidth are integrated, so that the semiconductor device has a large bandwidth characteristic, and the broadband peaking function can be realized on the basis of the original large bandwidth characteristic, and the large bandwidth requirement is met.

Inventors

  • TANG XINYAN
  • LU LEI

Assignees

  • 华为技术有限公司

Dates

Publication Date
20260508
Application Date
20241108

Claims (9)

  1. 1. A semiconductor device, comprising: The first following link is used for outputting a first following signal according to a received first input signal; A first variable resistor; The current mirror comprises a first transistor and a first capacitor, wherein a first end of the first transistor is coupled with an output end of the first follower circuit, a second end of the first transistor is coupled with a grounding end, a third end of the first transistor is coupled with a first end of the first variable resistor and is used for receiving a control signal, and the first capacitor is coupled between the second end of the first variable resistor and the grounding end.
  2. 2. The semiconductor device of claim 1, further comprising a second follower link configured to output a second follower signal based on a received second input signal, wherein the first and second input signals are differential signals and the first and second follower signals are differential signals.
  3. 3. The semiconductor device of claim 2, wherein the current mirror further comprises a second transistor, a first terminal of the second transistor coupled to the output terminal of the second follower link, a second terminal of the second transistor coupled to the ground terminal, a third terminal of the second transistor for coupling to the second terminal of the first variable resistor, and a third terminal of the second transistor for receiving a control signal.
  4. 4. The semiconductor device of claim 3, further comprising a second variable resistor coupled between a third terminal of the second transistor and a second terminal of the first variable resistor.
  5. 5. The semiconductor device according to any one of claims 1 to 4, wherein the first follower link includes a third transistor, a first terminal of the third transistor being coupled to a first voltage terminal, a second terminal of the third transistor being for outputting the first follower signal, a third terminal of the third transistor being coupled to a first signal source for providing the first input signal.
  6. 6. The semiconductor device of any of claims 1-4, wherein the first follower link comprises a cut-off frequency ft-multiplier or Darlington circuit.
  7. 7. The semiconductor device of claim 6, wherein the ft-multiplier comprises a first bipolar transistor BJT and a second BJT, the base of the first BJT coupled to the first signal source, the collector of the first BJT coupled to a first voltage terminal, the emitter of the first BJT coupled to the base of the second BJT, the collector of the second BJT coupled to the first voltage terminal, the emitter of the second BJT for outputting the first follower signal; The ft-multiplier further includes an inductor coupled between an emitter of a first BJT tube and a base of a second BJT tube in the ft-multiplier.
  8. 8. An optical module comprising a transmitter and a semiconductor device according to any one of claims 1-7, the transmitter and the semiconductor device being coupled by an optical fiber; the transmitter is used for modulating communication data into corresponding optical signals and outputting the optical signals into the optical fiber; the semiconductor device is used for demodulating the optical signal received through the optical fiber into corresponding communication data.
  9. 9. An electronic device comprising a housing and the semiconductor device according to any one of claims 1 to 7, wherein the semiconductor device is provided in the housing.

Description

Semiconductor device, optical module and electronic equipment Technical Field The present application relates to the field of communications technologies, and in particular, to a semiconductor device, an optical module, and an electronic device. Background In the field of optical communication, a receiver is generally provided, through which signals can be received and processed, wherein when the receiver includes a broadband peaking circuit, the broadband peaking circuit can compensate for the loss of the received voltage signal at high frequency, thereby expanding the bandwidth. At present, when a differential amplifying circuit with a broadband peaking function is used as the broadband peaking circuit, the gain of the differential amplifying circuit is larger than 1, so that the bandwidth is relatively smaller due to the influence of the gain bandwidth product, and the increasing requirement of large bandwidth cannot be met. Disclosure of Invention The application provides a semiconductor device, an optical module and electronic equipment, which are used for meeting the requirement of large bandwidth. In a first aspect, an embodiment of the application provides a semiconductor device, which can comprise a first following link, a first variable resistor and a current mirror, wherein the first following link is used for outputting a first following signal according to a received first input signal, the current mirror comprises a first transistor and a first capacitor, a first end of the first transistor is coupled with an output end of the first following circuit, a second end of the first transistor is coupled with a grounding end, a third end of the first transistor is coupled with a first end of the first variable resistor, a third end of the first transistor is used for receiving a control signal, and the first capacitor is coupled between a second end of the first variable resistor and the grounding end. In this way, under the action of the first variable resistor, the damping coefficient of the semiconductor device can be adjusted, and the high-frequency peak value, influenced by two conjugate poles, in the semiconductor device can be adjusted through the damping coefficient, so that the semiconductor device has a broadband peaking function. And because the gain of the semiconductor device is 1, the bandwidth improved by the semiconductor device is necessarily superior to that of the differential amplifying circuit when the gain and the bandwidth are integrated, so that the semiconductor device has a large bandwidth characteristic, and the broadband peaking function can be realized on the basis of the original large bandwidth characteristic, and the large bandwidth requirement is met. Alternatively, the semiconductor device may be a single-ended circuit, or the semiconductor device may be a differential circuit, where the semiconductor device further includes a second follower link, and the second follower link is configured to output a second follower signal according to a received second input signal, where the first input signal and the second input signal are differential signals, and the first follower signal and the second follower signal are differential signals. Therefore, the semiconductor device with the differential mode can also have a broadband peaking function, so that the semiconductor device can be adapted to front and rear stage circuits with various modes, and the application scene and the application range of the semiconductor device are expanded. Further, the current mirror further includes a second transistor, a first terminal of the second transistor is coupled to an output terminal of the second follower link, a second terminal of the second transistor is coupled to a ground terminal, a third terminal of the second transistor is coupled to a second terminal of the first variable resistor, and a third terminal of the second transistor is configured to receive the control signal. Therefore, only the second current mirror transistor is additionally arranged in the current mirror, so that the differential function of the broadband peaking circuit can be met, the structure of the original current mirror is not required to be changed greatly, and the design difficulty of the broadband peaking circuit is reduced. Further, the semiconductor device further includes a second variable resistor coupled between the third terminal of the second transistor and the second terminal of the first variable resistor. Therefore, the broadband peaking function can be realized on the basis of meeting the differential function of the semiconductor device through the first variable resistor and the second variable resistor. Optionally, the first follower link includes a third transistor, a first terminal of the third transistor being coupled to the first voltage terminal, a second terminal of the third transistor being for outputting the first follower signal, a third terminal of the third transistor be