CN-122002149-A - Image sensing device

Abstract

An image sensing apparatus capable of realizing a plurality of gains is disclosed. In an embodiment, an image sensing apparatus includes a first pixel including a first Dual Conversion Gain (DCG) transistor and a second DCG transistor that adjust a capacitance of a first floating diffusion region shared by a plurality of pixels included in a first pixel group, and a second pixel including a third DCG transistor and a fourth DCG transistor that adjust a capacitance of a second floating diffusion region shared by a plurality of pixels included in a second pixel group disposed at one side of the first pixel group. The gate of the first DCG transistor and the gate of the second DCG transistor are arranged closer to the second pixel from the center of the first pixel, and the gate of the third DCG transistor and the gate of the fourth DCG transistor are arranged closer to the first pixel from the center of the second pixel.

Inventors

• CUI CHENGHAO
• JIN XIDONG
• LI XUANZHENG
• Lin Xuanxiu
• QUAN XIAOJUN
• Bai Duoyi

Assignees

• 爱思开海力士有限公司

Dates

Publication Date

20260508

Application Date

20250811

Priority Date

20241101

Claims (20)

1. 1. An image sensing apparatus, the image sensing apparatus comprising: A pixel array of pixels for sensing incident light to capture an image carried by the incident light, wherein the pixel array comprises a first pixel group of pixels and a second pixel group of pixels, the second pixel group being disposed on one side of and adjacent to the first pixel group, Wherein the first pixel group includes a first pixel including a first dual conversion gain DCG transistor and a second DCG transistor that adjust a capacitance of a first floating diffusion region shared by a plurality of pixels included in the first pixel group, and Wherein the second pixel group includes a second pixel including a third DCG transistor and a fourth DCG transistor that adjust a capacitance of a second floating diffusion region shared by a plurality of pixels included in the second pixel group, Wherein, the The gates of the first and second DCG transistors are arranged such that a distance between the gates of the first and second DCG transistors and the second pixel is shorter than a distance between the second pixel and a center of the first pixel, and the gates of the third and fourth DCG transistors are arranged such that a distance between the gates of the third and fourth DCG transistors and the first pixel is shorter than a distance between the first and second pixels.
2. 2. The image sensing device of claim 1, further comprising: A first dual conversion gain DCG electrical interconnect electrically connecting a terminal of the first DCG transistor to a terminal of the third DCG transistor, and A second DCG electrical interconnect electrically connects a terminal of the second DCG transistor to a terminal of the fourth DCG transistor.
3. 3. The image sensing device of claim 2, wherein, The first pixel includes: a first photoelectric conversion element and a second photoelectric conversion element that generate photo-charges in response to incident light, and The second pixel includes: A third photoelectric conversion element and a fourth photoelectric conversion element that generate photo-charges in response to the incident light.
4. 4. The image sensing device of claim 3, further comprising: and a pixel isolation structure provided between the first photoelectric conversion element and the second photoelectric conversion element and between the third photoelectric conversion element and the fourth photoelectric conversion element.
5. 5. The image sensing device of claim 3, wherein, The gate of the first DCG transistor overlaps the first photoelectric conversion element, The gate of the second DCG transistor overlaps the second photoelectric conversion element, The gate of the third DCG transistor overlaps the third photoelectric conversion element, and A gate of the fourth DCG transistor overlaps the fourth photoelectric conversion element.
6. 6. The image sensing device of claim 3, wherein, The first pixel further includes: A first transfer transistor that moves the photo-charge generated by the first photoelectric conversion element to the first floating diffusion region, and A second transfer transistor that moves the photo-charges generated by the second photoelectric conversion element to the first floating diffusion region, and The second pixel further includes: A third transfer transistor that moves the photo-charges generated by the third photoelectric conversion element to the second floating diffusion region, and And a fourth transfer transistor that moves the photo-charge generated by the fourth photoelectric conversion element to the second floating diffusion region.
7. 7. The image sensing device of claim 1, wherein, The first pixel group further includes: a first driving transistor amplifying an electric signal corresponding to the photo-charges stored in the first floating diffusion region, and The second pixel group further includes: And a second driving transistor amplifying an electrical signal corresponding to the photo-charges stored in the second floating diffusion region.
8. 8. The image sensing device of claim 7, wherein, The first pixel group further includes: A first selection transistor selectively outputting an electric signal amplified by the first driving transistor, and The second pixel group further includes: A second selection transistor that selectively outputs the electric signal amplified by the second driving transistor.
9. 9. The image sensing device of claim 1, wherein, The first pixel group includes: a first one of the reset transistors is provided with a first one of the reset transistors, the first reset transistor resets the first floating diffusion region, and The second pixel group includes: and a second reset transistor resetting the second floating diffusion region.
10. 10. The image sensing device of claim 1, further comprising: A third dual conversion gain DCG electrical interconnect electrically connecting a terminal of the first DCG transistor to a terminal of the second DCG transistor, and A fourth DCG electrical interconnect electrically connects the terminal of the third DCG transistor to the terminal of the fourth DCG transistor.
11. 11. The image sensing device of claim 1, wherein, The first floating diffusion region is electrically connected to a terminal of the first DCG transistor, and The second floating diffusion region is electrically connected to a terminal of the third DCG transistor.
12. 12. An image sensing apparatus, the image sensing apparatus comprising: a first pixel including a first photoelectric conversion element and a second photoelectric conversion element that generate a photo-charge in response to incident light; A second pixel including a third photoelectric conversion element and a fourth photoelectric conversion element that generate a photo-charge in response to the incident light, the second pixel being in contact with a side surface of the first pixel; A third pixel including a fifth photoelectric conversion element and a sixth photoelectric conversion element generating a photo-charge in response to the incident light, a side surface of the third pixel being in contact with an opposite side surface of the first pixel, and A fourth pixel including a seventh photoelectric conversion element and an eighth photoelectric conversion element that generate a photo-charge in response to the incident light, the fourth pixel being in contact with an opposite side surface of the third pixel, Wherein, the The first pixel includes: A first dual conversion gain DCG transistor and a second DCG transistor that adjust conversion gains of the first pixel and the second pixel and that are arranged such that a distance between the first DCG transistor and the second DCG transistor and the side surface of the third pixel is shorter than a distance between the first DCG transistor and the second DCG transistor and the side surface of the first pixel, and The third pixel includes: A third DCG transistor and a fourth DCG transistor that adjust conversion gains of the third pixel and the fourth pixel and that are arranged such that a distance between the third DCG transistor and the fourth DCG transistor and the opposite side surface of the first pixel is shorter than a distance between the third DCG transistor and the fourth DCG transistor and the opposite side surface of the third pixel.
13. 13. The image sensing device of claim 12, wherein, One terminal of the first DCG transistor and one terminal of the third DCG transistor are electrically connected to each other, and One terminal of the second DCG transistor and one terminal of the fourth DCG transistor are electrically connected to each other.
14. 14. The image sensing device of claim 13, wherein, The first pixel includes: A first floating diffusion region storing a photoelectric charge generated by the first and second photoelectric conversion elements, and The third pixel includes: A second floating diffusion region storing photo-charges generated by the fifth photoelectric conversion element and the sixth photoelectric conversion element.
15. 15. The image sensing device of claim 14, wherein, The other terminal of the first DCG transistor is electrically connected to the first floating diffusion region, and The other terminal of the third DCG transistor is electrically connected to the second floating diffusion region.
16. 16. The image sensing device of claim 14, wherein, The one terminal of the first DCG transistor is electrically connected to the other terminal of the second DCG transistor, and The one terminal of the third DCG transistor is electrically connected to the other terminal of the fourth DCG transistor.
17. 17. The image sensing device of claim 12, wherein, When the first to fourth DCG transistors are all turned off, the first and second pixels have a high conversion gain higher than a conversion gain, When the first DCG transistor is turned on and the second to fourth DCG transistors are turned off, the first and second pixels have the conversion gain higher than the low conversion gain and lower than the high conversion gain, and When the first to fourth DCG transistors are all turned on, the first and second pixels have the low conversion gain lower than the high conversion gain and the conversion gain.
18. 18. The image sensing device of claim 17, wherein, The conversion gain is twice the low conversion gain.
19. 19. The image sensing device of claim 17, wherein, The high conversion gain is eight times the low conversion gain.
20. 20. The image sensing device of claim 17, wherein, When the first to fourth DCG transistors are all turned off, the third and fourth pixels have a high conversion gain higher than a conversion gain, When the third DCG transistor is turned on and the first DCG transistor, the second DCG transistor, and the fourth DCG transistor are turned off, the third pixel and the fourth pixel have the conversion gain higher than the low conversion gain and lower than the high conversion gain, and When the first to fourth DCG transistors are all turned on, the third and fourth pixels have the low conversion gain lower than the high conversion gain and the conversion gain.

Description

Image sensing device Technical Field The technology and embodiments disclosed in this patent document relate generally to image sensing devices and, more particularly, relate to image sensing devices capable of achieving multiple gains. Background The image sensing device may capture an optical image by converting light into an electrical signal using a photosensitive semiconductor material that reacts to the light. As industries such as the automotive, medical, computer, and communication industries progress, the demand for high performance image sensing devices is growing across various fields such as smartphones, digital cameras, gaming machines, ioT (internet of things), robots, security cameras, and medical miniature cameras. Image sensing apparatuses can be broadly classified into Charge Coupled Device (CCD) image sensing apparatuses and Complementary Metal Oxide Semiconductor (CMOS) image sensing apparatuses. CCD image sensing devices provide better image quality, but they tend to consume more power and be larger than CMOS image sensing devices. CMOS image sensing devices are smaller in size and consume less power than CCD image sensing devices. Further, the CMOS image sensing device is manufactured using CMOS manufacturing technology, and thus the photosensor and other signal processing circuits can be integrated into a single chip, enabling the miniaturized image sensing device to be produced at lower cost. For these reasons, CMOS image sensing devices are being developed for many applications including mobile devices. Disclosure of Invention Various embodiments of the disclosed technology relate to an image sensing device capable of reducing junction capacitance and implementing multiple conversion gains when two different Dual Conversion Gain (DCG) transistors are electrically connected to each other. Various embodiments of the disclosed technology relate to an image sensing apparatus capable of more precisely adjusting the ratio of a plurality of conversion gains. In an embodiment of the disclosed technology, an image sensing apparatus may include a first pixel including a first Dual Conversion Gain (DCG) transistor and a second DCG transistor that change a capacitance of a first floating diffusion region shared by a plurality of pixels included in the first pixel group, and a second pixel including a third DCG transistor and a fourth DCG transistor that change a capacitance of a second floating diffusion region shared by a plurality of pixels included in a second pixel group disposed at one side of the first pixel group, wherein a gate of the first DCG transistor and a gate of the second DCG transistor are disposed closer to the second pixel from a center of the first pixel, and a gate of the third DCG transistor and a gate of the fourth DCG transistor are disposed closer to the first pixel from a center of the second pixel. In some implementations, the image sensing device may further include a first Dual Conversion Gain (DCG) electrical interconnect configured to electrically interconnect one terminal of the first DCG transistor with one terminal of the third DCG transistor, and a second DCG electrical interconnect configured to electrically interconnect one terminal of the second DCG transistor with one terminal of the fourth DCG transistor. In some implementations, the first pixel may include a first photoelectric conversion element and a second photoelectric conversion element, each of the first and second photoelectric conversion elements generating a photo-charge in response to incident light, and the second pixel may include a third and fourth photoelectric conversion element, each of the third and fourth photoelectric conversion elements generating a photo-charge in response to incident light. In some implementations, the image sensing apparatus may further include a pixel isolation structure disposed between the first and second photoelectric conversion elements and between the third and fourth photoelectric conversion elements. In some implementations, the gate of the first DCG transistor may overlap the first photoelectric conversion element, the gate of the second DCG transistor may overlap the second photoelectric conversion element, the gate of the third DCG transistor may overlap the third photoelectric conversion element, and the gate of the fourth DCG transistor may overlap the fourth photoelectric conversion element. In some implementations, the first pixel may further include a first transfer transistor configured to move the photo-charges generated by the first photoelectric conversion element to the first floating diffusion region, and a second transfer transistor configured to move the photo-charges generated by the second photoelectric conversion element to the first floating diffusion region. The second pixel may further include a third transfer transistor configured to move the photo-charges generated by the third photoelectric conversion element to the second floating