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CN-122002701-A - Stacked inductance-capacitance integrated packaging module and preparation method thereof

CN122002701ACN 122002701 ACN122002701 ACN 122002701ACN-122002701-A

Abstract

The invention relates to the technical field of electronic devices, and discloses a stacked inductor-capacitor integrated packaging module and a preparation method thereof, comprising a stacked inductor module, a capacitor module and a topology conversion layer, wherein the topology conversion layer is provided with a first topology connection component and a second topology connection component, the first topology connection component or the second topology connection component is used for electric connection between the inductor module and the capacitor module, the inductor module and the capacitor module are in a first electrical topology state when being communicated through the first topology connecting assembly, and are in a second electrical topology state when being communicated through the second topology connecting assembly, and the first electrical topology state and the second electrical topology state can be switched.

Inventors

  • ZHOU WEI

Assignees

  • 联振电子(中山)有限公司

Dates

Publication Date
20260508
Application Date
20260127

Claims (9)

  1. 1. The stacked inductor-capacitor integrated packaging module comprises an inductor module and a capacitor module and is characterized by further comprising a topology conversion layer, wherein the inductor module, the topology conversion layer and the capacitor module are stacked and packaged, the topology conversion layer is electrically isolated between the inductor module and the capacitor module, a first topology connection component and a second topology connection component are arranged on the topology conversion layer, the first topology connection component or the second topology connection component is used for electric connection between the inductor module and the capacitor module, the first topology state is a first electric topology state when the inductor module and the capacitor module are communicated through the first topology connection component, the second electric topology state is a second electric topology state when the inductor module and the capacitor module are communicated through the second topology connection component, and the first electric topology state and the second electric topology state are switchable.
  2. 2. The stacked lc integrated package of claim 1, wherein the topology conversion layer comprises an electrically isolated layer, a magnetic shielding layer, wherein the magnetic shielding layer is located between two of the electrically isolated layers.
  3. 3. The stacked lc integrated package of claim 1, wherein the lc module has a square configuration and includes a first lc connecting plate and a second lc connecting plate, the first lc connecting plate being opposite the second lc connecting plate.
  4. 4. The stacked lc integrated package of claim 3, wherein the lc module has a square configuration adapted to the lc module, and comprises a first lc connection plate and a second lc connection plate, the first lc connection plate being opposite the second lc connection plate.
  5. 5. The stacked lc integrated package of claim 4, wherein the first lc connection plate is opposite an end of the first lc connection plate and the second lc connection plate is opposite an end of the second lc connection plate.
  6. 6. The stacked inductor and capacitor integrated packaging module according to claim 1, wherein the inductor module is packaged in a plastic package body, a first track groove is formed in the bottom of the plastic package body, the capacitor module is packaged in the plastic package body, a second track groove is formed in the upper portion of the plastic package body, and the first track groove is opposite to the second track groove.
  7. 7. The stacked lc integrated package of claim 6, wherein two ends of the first and second topological connection assemblies are protruding and clamped in the first and second track grooves.
  8. 8. The preparation method of the stacked inductor-capacitor integrated package module is characterized by being used for preparing the stacked inductor-capacitor integrated package module according to any one of claims 1-7, and comprises the following steps: Step S10, plastic packaging is carried out on the inductance module; Step S20, plastic packaging is carried out on the capacitor module; And S30, stacking an inductance module, a topology conversion layer and a capacitance module, wherein the topology conversion layer is positioned between the inductance module and the capacitance module, and the topology conversion layer can rotate relative to the capacitance module and the inductance module.
  9. 9. The method of claim 9, wherein rotation of the topology conversion layer changes an electrical topology connection state between the inductor module and the capacitor module.

Description

Stacked inductance-capacitance integrated packaging module and preparation method thereof Technical Field The invention relates to the technical field of electronic devices, in particular to a stacked inductor-capacitor integrated packaging module and a preparation method thereof. Background With the rapid development of artificial intelligence technology, the computational power requirement of an AI chip grows exponentially, and a multiphase power supply system matched with the AI chip needs to meet the requirements of high power density, low ripple, rapid dynamic response and compact installation space at the same time. In the conventional multiphase power supply design, an inductor and an output capacitor are used as core energy storage elements, and usually adopt a discrete packaging form, and the inductor and the output capacitor are welded and installed through independent bonding pads on a PCB (printed circuit board). The discrete layout has two core problems that firstly, the space occupation rate is high, the discrete inductors and capacitors are required to be reserved for mounting areas on the PCB independently, a certain interval is required to be kept for ensuring the electrical performance, the space design requirement of' the inside of an AI server is difficult to meet, secondly, the cost and the performance are difficult to balance, and in order to reduce parasitic parameters among discrete components, high-precision wiring or an additional shielding structure is required to be adopted, so that the design complexity of the PCB is improved, and meanwhile, the whole production cost is also improved due to the increase of component purchasing and welding procedures. The chinese patent application with the application number 2022107480324 discloses a capacitor-inductor odd-even layer layered stacked resonator, which comprises a capacitor, an inductor, a first port and a second port processed on a substrate, wherein the multilayer capacitor and the multilayer inductor of the resonator are stacked in a layered manner and are connected in parallel and between the first port and the second port, the inductor is positioned inside the capacitor, a defect structure is arranged on each layer of capacitor positioned between the uppermost layer of capacitor and the lowermost layer of capacitor, and a via hole of the inductor vertically penetrates through the defect structure and is connected with the inductor of an adjacent layer. The capacitor and the inductor occupy only the plane area of one element, have the characteristics of high integration level, small volume, high temperature resistance and integrated processing and forming, and can be applied to the design of passive devices such as filters, couplers and the like with a capacitor and inductor series-parallel structure. Chinese patent application number 2018800810965 discloses a three-dimensional inductor-capacitor device and method of fabrication, involving a device comprising a plurality of stacked metal layers arranged in a spiral shape. The plurality of stacked metal layers includes a first metal layer including a first inductor, a second metal layer including a plurality of first pads and a plurality of second pads, a third metal layer including a plurality of third pads and a plurality of fourth pads, a fourth metal layer including a second inductor, a plurality of first vias configured to couple the first metal layer to the second metal layer, a plurality of second vias configured to couple the second metal layer to the third metal layer, a plurality of third vias configured to couple the third metal layer to the fourth metal layer, and a dielectric layer at least partially surrounding the device. The capacitor is formed of any one of the plurality of stacked metal layers separated only by the dielectric layer, and any other one of the plurality of stacked metal layers, wherein the capacitor and the first inductor, the second inductor are coupled in parallel with each other. In the patent schemes of application number 2022107480324 and application number 201880081095, superposition stacking of the inductor and the capacitor is achieved through different stacking modes, although the stacking mode enables the capacitor and the inductor to occupy only one element size, three-dimensional space is utilized to the greatest extent, miniaturization and high integration of the resonator are achieved, at the same time, an alternating magnetic field generated during operation of the inductor is inevitably enabled to be coupled to adjacent capacitor plates, problems of polarization disturbance of a capacitor medium, induced eddy current loss, resonance frequency deviation or instability are caused, and an electrical connection structure of the inductor and the capacitor is mutually embedded with a detent, reconstruction of the connection mode cannot be achieved, so that an electrical topological structure of the stacked inductor-capacitor is fixed, an