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CN-122002738-A - Automobile inverter power board based on hybrid device and application thereof

CN122002738ACN 122002738 ACN122002738 ACN 122002738ACN-122002738-A

Abstract

The invention relates to an automobile inverter power board based on a hybrid device, which comprises a power PCB, a busbar, a current sensor and a capacitor plate, wherein the power PCB is connected with the busbar, the capacitor plate is connected to the busbar, the current sensor is arranged on the busbar to detect busbar current, the power PCB comprises a PCB, a three-phase circuit, a temperature acquisition module, high-voltage terminals and a signal bus, the PCB comprises a front surface, a first inner layer, a second inner layer and a back surface of the PCB, the front surface, the first inner layer, the second inner layer and the back surface are sequentially arranged, a plurality of high-voltage terminals penetrate through the PCB, a three-phase circuit and a plurality of temperature acquisition modules are arranged on the front surface, a plurality of signal bus bars are arranged on the back surface of the PCB, copper foils are respectively paved on the first inner layer and the second inner layer, and the copper foils cover the whole PCB. The invention provides a special design scheme, which can fully adapt to the working requirement of large current and ensure the stable conduction of the device under the high-power working condition.

Inventors

  • HAN JISHENG
  • WANG GUANGSHENG
  • TANG WEIFENG
  • XU XIANGANG

Assignees

  • 山东大学

Dates

Publication Date
20260508
Application Date
20260209

Claims (10)

  1. 1. The automobile inverter power board based on the hybrid device is characterized by comprising a power PCB, a bus bar, a current sensor and a capacitor plate, wherein the power PCB is connected with the bus bar, the bus bar is connected with the capacitor plate, and the current sensor is arranged on the bus bar; The power PCB comprises a PCB board, a three-phase circuit, a temperature acquisition module, high-voltage terminals and a signal bus, wherein the PCB board comprises a PCB board front surface, a first inner layer, a second inner layer and a PCB board back surface which are sequentially arranged, and a plurality of high-voltage terminals penetrate through the PCB board; copper foils are respectively paved on the first inner layer and the second inner layer, and the copper foils cover the whole PCB; The front surface of the PCB is provided with a three-phase circuit and a plurality of temperature acquisition modules, and the back surface of the PCB is provided with a plurality of signal bus bars; each temperature acquisition module is connected with a signal bus through a copper foil of the PCB.
  2. 2. The hybrid-based automotive inverter power board of claim 1, wherein the three-phase circuit comprises three half-bridges, a U-phase bridge arm, a V-phase bridge arm, and a W-phase bridge arm, each arranged side by side; each half bridge comprises an upper bridge arm and a lower bridge arm, the lower side of the upper bridge arm is provided with the lower bridge arm, and the upper bridge arm and the lower bridge arm respectively comprise 2 power devices which are arranged side by side, namely Si IGBT and SiC MOSFET.
  3. 3. The hybrid-based automotive inverter power board of claim 2, wherein the SiC MOSFET includes a G pin, a D pin, and an S pin, the G pin and the S pin being provided on both sides of the D pin, respectively; the Si IGBT comprises a G pin, a C pin and an E pin, wherein the G pin and the E pin are respectively arranged on two sides of the C pin; In each half bridge, the S pin of the upper bridge arm SiC MOSFET is connected with the D pin of the lower bridge arm SiC MOSFET of the corresponding half bridge, the E pin of the upper bridge arm Si IGBT is connected with the C pin of the lower bridge arm Si IGBT of the corresponding half bridge, the C pin of the upper bridge arm Si IGBT is connected with the D pin of the upper bridge arm SiC MOSFET of the corresponding half bridge, and the D pin of the lower bridge arm SiC MOSFET is connected with the C pin of the lower bridge arm Si IGBT of the corresponding half bridge; In all half-bridges, the D pins of all upper bridge arm SiC MOSFETs are connected with the C pins of all upper bridge arm Si IGBTs, and the S pins of all lower bridge arm SiC MOSFETs are connected with the E pins of all lower bridge arm Si IGBTs.
  4. 4. The hybrid-device-based automotive inverter power board of claim 3, wherein one side of each Si IGBT and SiC MOSFET is provided with a temperature acquisition module, and each temperature acquisition module is connected with a single signal bus bar through a copper foil of the PCB board; the G pins of the Si IGBT and SiC MOSFET in each half bridge are connected with a single signal busbar.
  5. 5. The hybrid-based automotive inverter power board of claim 4, wherein the high voltage terminals are copper pins, and the distance between each high voltage terminal and the distance between the high voltage terminal and the power device, the temperature acquisition module and the signal bus are all greater than 6mm; The diameter of the copper needle meets I=K.d 1.5 , wherein I represents the design target direct current, K represents the current coefficient, and d represents the diameter of the copper needle; Further preferably, k=8.
  6. 6. The hybrid-based automotive inverter power board of claim 5, wherein the capacitive plate comprises a positive terminal, an insulating sheet, a negative terminal and a film capacitor arranged in this order from top to bottom; the insulating sheet is made of FR-4 material, the positive electrode terminal and the negative electrode terminal are copper sheets, a plurality of openings are formed in the positive electrode terminal and the negative electrode terminal, and bolts fix the positive electrode terminal, the insulating sheet, the negative electrode terminal and the film capacitor at the positions of the openings; The positive terminal and the negative terminal are respectively provided with a connecting hole extending out at one side and the upper side, the upper side connecting hole is connected with a direct current power supply, and the side connecting hole is connected with a busbar; The film capacitor is selected according to a formula that the capacitance is more than or equal to Ipak multiplied by Ts/(2 multiplied by delta Vdc), wherein Ipak is the peak current of the power device, ts is the switching period of the power device, delta Vdc is the allowable bus voltage ripple, the value is 0.02-0.05Vdc, and Vdc is the direct current voltage of the inverter.
  7. 7. The hybrid-based automotive inverter power board of claim 6, wherein the bus bars comprise direct current positive and negative bus bars and three-phase bus copper bars, the direct current positive and negative bus bars comprising positive and negative bus bars; the width of the direct current positive and negative bus bar is 10mm, and the thickness L= (I 1 /98) 2 ,I 1 represents the load current of the power device; Rectangular windowing is arranged on the upper parts of all upper bridge arms on the front surface of the PCB, one end of the positive electrode busbar is connected with copper foil of the PCB in a windowing position in a welding mode, and the other end of the positive electrode busbar is connected with a side surface connecting hole of a positive electrode terminal of the capacitor plate; The back positions of the PCB corresponding to the lower parts of the lower bridge arms are provided with the same rectangular window, one end of the negative electrode busbar is connected with copper foils of the PCB in the window position in a welding mode, and the other end of the negative electrode busbar is connected with a side connecting hole of a negative electrode terminal of the capacitor plate; the three-phase bus copper bars comprise U-phase bus copper bars, V-phase bus copper bars and W-phase bus copper bars, and each bus copper bar is a copper sheet with the thickness of 3mm; The lower part of each lower bridge arm on the front side of the PCB is provided with an independent rectangular window, and U-phase bus copper bars, V-phase bus copper bars and W-phase bus copper bars are sequentially welded on copper foils of the PCB at the window position from left to right.
  8. 8. The hybrid-based automotive inverter power board of claim 7, wherein the positive busbar is connected with the D pins of all SiC MOSFETs of the upper bridge arm and the C pins of Si IGBTs through copper foils of the PCB board; The negative busbar is connected with S pins of the SiC MOSFETs of all the lower bridge arms and E pins of the Si IGBT through copper foils of the PCB; The U-phase bus copper bar is connected with a D pin of a SiC MOSFET of a lower bridge arm of the U-phase bridge arm and a C pin of a Si IGBT through copper foil of the PCB; The V-phase bus copper bar is connected with a D pin of a SiC MOSFET of a lower bridge arm of the V-phase bridge arm and a C pin of a Si IGBT through copper foil of the PCB; The W-phase bus copper bar is connected with a D pin of the SiC MOSFET of the lower bridge arm of the W-phase bridge arm and a C pin of the Si IGBT through copper foils of the PCB.
  9. 9. The hybrid-based power board of an automotive inverter of claim 8, wherein the current sensor comprises a three-phase current sensor and a direct current sensor, wherein the direct current sensor is arranged on the positive and negative busbar, and the three-phase current sensor is arranged on the three-phase busbar.
  10. 10. An application method of an automobile inverter power board based on a hybrid device, which is realized by adopting the automobile inverter power board based on the hybrid device as claimed in claim 9, is characterized by comprising the following steps: turning on a direct current power supply and starting a driving controller; The high-voltage signal transmitted by the high-voltage terminal is read, whether direct-current voltage is applied or not is detected, after the direct-current voltage signal is detected, the drive controller starts to send a drive signal to a power device of a power PCB through a signal bus, the power device is driven to work, direct current is converted into alternating current, and then the alternating current is sent to a motor through a three-phase bus copper bar, and the motor is driven to work; the temperature acquisition module is connected to the drive controller through the signal bus of the power PCB, the drive controller reads the electric signals sent by the signal bus, the three-phase current sensor and the direct current sensor of the temperature acquisition module when sending the drive signal, monitors the temperature, the three-phase current and the direct current of the power device, and if the power device is over-temperature or over-current, the drive controller immediately stops sending the drive signal and ends the operation.

Description

Automobile inverter power board based on hybrid device and application thereof Technical Field The invention relates to an automobile inverter power board based on a hybrid device and application thereof, and belongs to the technical field of power electronics. Background Power electronics have evolved to the present day, where conventional Si-based devices have approached physical limits, si materials have far less performance than third generation semiconductor materials in terms of forbidden band width, electron mobility, and breakdown field strength. SiC is used as a third generation wide bandgap semiconductor material, and due to the difference of physical characteristics of the materials, the manufactured SiC power device has higher switching frequency, higher efficiency and lower heating value. After long-time development, the performance, reliability and thermal performance of the SiC MOSFET are superior to those of Si IGBT, and the SiC MOSFET has important significance in the field of automobile inverters. The switching frequency of the SiC MOSFET device is higher, the switching loss is lower, the thermal characteristics are better, in the field of automobiles, head train rabbets such as Tesla and the like are changed from an early Si IGBT device to the SiC MOSFET device, and an inverter formed by the SiC MOSFET has great improvement in efficiency, thermal performance, switching frequency and power density, so that the method has great significance in manufacturing a high-performance inverter. At present, the SiC MOSFET device is limited by the manufacturing process and has higher price than Si IGBT. In order to balance the cost and performance of the inverter, the SiC MOSFET and the Si IGBT are connected in parallel, and the cost advantage of the Si IGBT and the performance advantage of the SiC MOSFET are comprehensively utilized to manufacture the low-cost and high-performance automobile inverter. However, the heterogeneous devices are connected in parallel, so that the problems of large current routing, EMI characteristics, drive compatibility and the like need to be considered, and the invention is proposed for solving the problems. Disclosure of Invention Aiming at the defects of the prior art, the invention provides an automobile inverter power board based on a hybrid device and application thereof, and solves a series of problems of layout, high-current wiring difficulty, EMI and the like caused by parallel connection of a SiC MOSFET and a Si IGBT. The technical scheme of the invention is as follows: The automobile inverter power board based on the hybrid device comprises a power PCB, a bus bar, a current sensor and a capacitor plate, wherein the power PCB is connected with the bus bar, the bus bar is connected with the capacitor plate, and the current sensor is arranged on the bus bar; The power PCB comprises a PCB board, a three-phase circuit, a temperature acquisition module, high-voltage terminals and a signal bus, wherein the PCB board comprises a PCB board front surface, a first inner layer, a second inner layer and a PCB board back surface which are sequentially arranged, and a plurality of high-voltage terminals penetrate through the PCB board; copper foils are respectively paved on the first inner layer and the second inner layer, and the copper foils cover the whole PCB; The front surface of the PCB is provided with a three-phase circuit and a plurality of temperature acquisition modules, and the back surface of the PCB is provided with a plurality of signal bus bars; each temperature acquisition module is connected with a signal bus through a copper foil of the PCB. According to the invention, the three-phase circuit comprises three half-bridges, namely a U-phase bridge arm, a V-phase bridge arm and a W-phase bridge arm which are arranged side by side; each half bridge comprises an upper bridge arm and a lower bridge arm, the lower side of the upper bridge arm is provided with the lower bridge arm, and the upper bridge arm and the lower bridge arm respectively comprise 2 power devices which are arranged side by side, namely Si IGBT and SiC MOSFET. Further preferably, the SiC MOSFET includes a G pin, a D pin, and an S pin, and the G pin and the S pin are respectively disposed on two sides of the D pin; the Si IGBT comprises a G pin, a C pin and an E pin, wherein the G pin and the E pin are respectively arranged on two sides of the C pin; In each half bridge, the S pin of the upper bridge arm SiC MOSFET is connected with the D pin of the lower bridge arm SiC MOSFET of the corresponding half bridge, the E pin of the upper bridge arm Si IGBT is connected with the C pin of the lower bridge arm Si IGBT of the corresponding half bridge, the C pin of the upper bridge arm Si IGBT is connected with the D pin of the upper bridge arm SiC MOSFET of the corresponding half bridge, and the D pin of the lower bridge arm SiC MOSFET is connected with the C pin of the lower bridge arm Si IGBT of the