CN-122002784-A - Semiconductor device and method for manufacturing semiconductor device

CN122002784ACN 122002784 ACN122002784 ACN 122002784ACN-122002784-A

Abstract

The semiconductor device comprises a substrate, a first semiconductor column extending along the direction vertical to the substrate and comprising a first side wall and a second side wall, wherein the second semiconductor column extends along the direction vertical to the substrate and is connected with the first side wall of the first semiconductor column, a first word line is arranged on the second side wall of the first semiconductor column, the material of the first semiconductor column has a first lattice constant, the material of the second semiconductor column has a second lattice constant, and the second lattice constant is larger than the first lattice constant. In the semiconductor device, the first semiconductor column and the second semiconductor column extend along the direction vertical to the substrate and are connected together, so that the occupied area can be reduced, and the storage density is provided. In addition, the first semiconductor pillar and the second semiconductor pillar have a first lattice constant and a second lattice constant, respectively, which can improve the conductivity of the first semiconductor pillar while relieving the floating body effect of the vertical transistor.

Inventors

LIAO YUCHENG
JIANG YI
ZHAO WENLI

Assignees

长鑫科技集团股份有限公司

Dates

Publication Date: 20260508
Application Date: 20241101

Claims (12)

1. A semiconductor device, comprising: A substrate; a first semiconductor pillar on the substrate extending in a third direction perpendicular to the substrate, the first semiconductor pillar including a first sidewall and a second sidewall oppositely established in a first direction, the first direction being parallel to the substrate; a second semiconductor pillar located on the substrate, extending in a third direction perpendicular to the substrate, and connected to the first sidewall of the first semiconductor pillar; a first word line extending in a second direction and disposed on a second sidewall of the first semiconductor pillar; The material of the first semiconductor column has a first lattice constant, and the material of the second semiconductor column has a second lattice constant, wherein the second lattice constant is larger than the first lattice constant.
2. The semiconductor device according to claim 1, wherein the semiconductor device further comprises: A third semiconductor pillar on the substrate extending in a third direction perpendicular to the substrate, the third semiconductor pillar including a third sidewall and a fourth sidewall oppositely established in the first direction; A fourth semiconductor pillar on the substrate extending in a third direction perpendicular to the substrate and connected to the fourth sidewall of the third semiconductor pillar, the fourth semiconductor pillar being disposed face-to-face with the second semiconductor pillar in the first direction; And the second word line extends along the second direction and is arranged on the third side wall of the third semiconductor column.
3. The semiconductor device according to claim 2, wherein, The first semiconductor pillar and the third semiconductor pillar comprise a silicon material; The material of the second semiconductor column and the fourth semiconductor column includes at least one of SiGe, gaAs, inAs, gaSb, inSb, inP, mgS, mgSe, znS, znSe, znTe, cdS, cdSe or CdTe.
4. The semiconductor device according to claim 3, wherein, The first semiconductor pillar and the third semiconductor pillar include a source region, a channel region, and a drain region disposed along the third direction; the channel region is doped with at least one of SiGe, gaAs, inAs, gaSb, inSb, inP, mgS, mgSe, znS, znSe, znTe, cdS, cdSe or CdTe.
5. The semiconductor device according to claim 2, wherein, The shapes of the second semiconductor pillars and the fourth semiconductor pillars may include at least one of rectangular parallelepiped, semi-cylindrical, or semi-conical shapes.
6. The semiconductor device according to claim 4, wherein the semiconductor device further comprises: The first connecting block is positioned between the second semiconductor column and the fourth semiconductor column and is respectively contacted with the second semiconductor column and the fourth semiconductor column, and the first connecting block is close to one end of the source electrode region or the drain electrode region.
7. The semiconductor device according to claim 6, wherein the semiconductor device further comprises: the second connecting block is positioned between the second semiconductor column and the fourth semiconductor column and is respectively contacted with the second semiconductor column and the fourth semiconductor column, the first connecting block is close to one end of the source electrode area or one end of the drain electrode area, and the second connecting block is not contacted with the first connecting block.
8. The semiconductor device according to claim 4, wherein the semiconductor device further comprises: And the third connecting block is positioned between the second semiconductor column and the fourth semiconductor column and is respectively contacted with the second semiconductor column and the fourth semiconductor column, and the third connecting block, the second semiconductor column and the fourth semiconductor column are at equal heights in a third direction.
9. The semiconductor device according to claim 2, wherein, The first word line is also arranged on two side walls of the first semiconductor column which are oppositely arranged along the second direction; The second word line is also arranged on two side walls of the third semiconductor column which are oppositely arranged along the second direction.
10. The semiconductor device according to any one of claims 1 to 9, further comprising: a bit line extending along a first direction, connecting source or drain regions of the first and third semiconductor pillars arranged along the first direction; and the memory cell extends along the third direction and is connected with the drain electrode or the source electrode of the first semiconductor column and the third semiconductor column.
11. A method for manufacturing a semiconductor device is characterized in that, Providing a substrate; Forming a first semiconductor column on the substrate, the first semiconductor column extending along a third direction perpendicular to the substrate, the first semiconductor column including a first sidewall and a second sidewall oppositely established along a first direction, the first direction being parallel to the substrate; Performing epitaxial growth on the first side wall to form a second semiconductor column, wherein the second semiconductor column is positioned on the substrate, extends along a third direction perpendicular to the substrate and is connected with the first side wall of the first semiconductor column; Forming a first word line extending in a second direction and disposed on a second sidewall of the first semiconductor pillar; The material of the first semiconductor column has a first lattice constant, and the material of the second semiconductor column has a second lattice constant, wherein the second lattice constant is larger than the first lattice constant.
12. The method for manufacturing a semiconductor device according to claim 11, wherein, A third semiconductor column is formed on the substrate, the third semiconductor column extends along a third direction perpendicular to the substrate, and the third semiconductor column comprises a third side wall and a fourth side wall which are oppositely arranged along the first direction; Performing epitaxial growth on the fourth side wall of the third semiconductor column to form a fourth semiconductor column, wherein the fourth semiconductor column extends along a third direction perpendicular to the substrate and is connected with the fourth side wall of the third semiconductor column, and the fourth semiconductor column is arranged opposite to the second semiconductor column; forming a second word line extending in a second direction and disposed on a third sidewall of the third semiconductor pillar; The material of the first semiconductor column has a first lattice constant, and the material of the second semiconductor column has a second lattice constant, wherein the second lattice constant is larger than the first lattice constant.

Description

Semiconductor device and method for manufacturing semiconductor device Technical Field The present application relates to the field of integrated circuit technology, and in particular, to a semiconductor device and a method for manufacturing the semiconductor device. Background As memory devices continue to be required to increase density and performance, transistor formation techniques face physical limitations. For example, as the size of memory cells decreases, the size of transistors also decreases. This inevitably reduces the channel length of the transistor. When the channel length of the transistor is reduced, the characteristics of the memory device deteriorate due to various problems such as a decrease in data retention characteristics. The dynamic random access memory with the vertical channel transistor has the characteristics of small occupied area, large storage density, insignificant short channel effect and the like, and is widely paid attention to. Disclosure of Invention Based on the above, the embodiment of the application provides a semiconductor device and a preparation method of the semiconductor device, and the semiconductor device has the advantages of higher storage density, strong channel conductivity and the like. According to a first aspect, the present application provides a semiconductor device, including: A substrate; A first semiconductor pillar on the substrate extending in a third direction perpendicular to the substrate, the first semiconductor pillar including a first sidewall and a second sidewall oppositely established in a first direction, the first direction being parallel to the substrate; a second semiconductor pillar located on the substrate, extending in a third direction perpendicular to the substrate, and connected to the first sidewall of the first semiconductor pillar; a first word line extending in a second direction and disposed on a second sidewall of the first semiconductor pillar; The material of the first semiconductor column has a first lattice constant, and the material of the second semiconductor column has a second lattice constant, wherein the second lattice constant is larger than the first lattice constant. In some embodiments, the semiconductor device further comprises: A third semiconductor pillar on the substrate extending in a third direction perpendicular to the substrate, the third semiconductor pillar including a third sidewall and a fourth sidewall oppositely established in the first direction; A fourth semiconductor column located on the substrate and extending in a third direction perpendicular to the substrate, the fourth semiconductor column being connected to the fourth side wall of the third semiconductor column, the fourth semiconductor column being disposed opposite the second semiconductor column; A second word line extending in a second direction and disposed on the third sidewall of the third semiconductor pillar; The material of the third semiconductor column has a first lattice constant, and the material of the fourth semiconductor column has a second lattice constant, wherein the second lattice constant is larger than the first lattice constant. In some embodiments, the first semiconductor pillar and the third semiconductor pillar comprise a silicon material; The second semiconductor column and the fourth semiconductor column include at least one of SiGe, gaAs, inAs, gaSb, inSb, inP, mgS, mgSe, znS, znSe, znTe, cdS, cdSe or CdTe. In some embodiments, the first semiconductor pillar and the third semiconductor pillar include a source region, a channel region, and a drain region disposed along the third direction; the channel region is doped with at least one of SiGe, gaAs, inAs, gaSb, inSb, inP, mgS, mgSe, znS, znSe, znTe, cdS, cdSe or CdTe. In some embodiments, the shapes of the second semiconductor pillars and the fourth semiconductor pillars may include at least one of rectangular parallelepiped, semi-cylindrical, or semi-conical. In some embodiments, the semiconductor device further comprises: The first connecting block is positioned between the second semiconductor column and the fourth semiconductor column and is respectively contacted with the second semiconductor column and the fourth semiconductor column, and the first connecting block is close to one end of the source electrode region or the drain electrode region. In some embodiments, the semiconductor device further comprises: the second connecting block is positioned between the second semiconductor column and the fourth semiconductor column and is respectively contacted with the second semiconductor column and the fourth semiconductor column, the first connecting block is close to one end of the source electrode area or one end of the drain electrode area, and the second connecting block is not contacted with the first connecting block. In some embodiments, the semiconductor device further comprises: And the third connecting block is positioned between the second s