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CN-122002821-A - Capacitor, semiconductor device including the same, and method of manufacturing the same

CN122002821ACN 122002821 ACN122002821 ACN 122002821ACN-122002821-A

Abstract

A capacitor, a semiconductor device including the capacitor, and a method of manufacturing the capacitor are provided. The capacitor includes a first electrode, a ferroelectric layer on the first electrode, a second electrode on the ferroelectric layer, and an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode.

Inventors

  • Luo Bingxun
  • JIN SHENGXUAN
  • JIN XIAOYUAN
  • LI ZHOUHAO

Assignees

  • 三星电子株式会社

Dates

Publication Date
20260508
Application Date
20251104
Priority Date
20241105

Claims (14)

  1. 1. A capacitor, comprising: A first electrode; a ferroelectric layer on the first electrode; a second electrode on the ferroelectric layer, and An interface layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode, Wherein the interfacial layer comprises a perovskite structure material, The perovskite structure material comprises an oxide of a metal, the metal comprises divalent cations, tetravalent cations and trivalent cations, and The trivalent cation includes at least one selected from Sc, Y, la, ce, pr, nd, sm, dy, al, ga or In.
  2. 2. The capacitor of claim 1, wherein the divalent cation of the interface layer comprises at least one selected from Sr, ba, nd, pb, ca or Eu.
  3. 3. The capacitor of claim 1, wherein the tetravalent cation of the interfacial layer comprises at least one selected from Ti, ta, zr, hf or Sn.
  4. 4. The capacitor of claim 1, wherein the first electrode and the second electrode comprise at least one selected from perovskite structural materials or rock salt structural materials.
  5. 5. The capacitor of claim 4 wherein the first and second electrodes comprise at least one selected from SrRuO 3 、SrIrO 3 、SrFeO 3 、SrCoO 3 、SrMnO 3 、CaRuO 3 、LaMnO 3 、La (x) Sr (1-x) MnO 3 、LaNiO 3 、LaFeO 3 、LaCoO 3 、BN、AlN、GaN、Si 3 N 4 、Ta 3 N 5 、Cu 3 N、InN、Zr 3 N 4 、Hf 3 N 4 、LaN、LuN、TiN、MoN、VN、TaN、WN、HfN、NbN and ZrN, wherein 0< x <1.
  6. 6. The capacitor of claim 1, wherein the ferroelectric layer comprises at least one selected from a perovskite structure, a fluorite structure, or a wurtzite structure.
  7. 7. The capacitor of claim 6, wherein the ferroelectric layer comprises at least one selected from BaTiO 3 、Ba (x) Sr (1-x) TiO 3 、PbTiO 3 、PbZrO 3 、PbTi (x) Zr (1-x) O 3 、PbMg (x) Nb (1-x) O 3 、PbZn (x) Nb (1-x) O 3 、PbFe (x) Nb (1-x) O 3 、PbNi (x) Nb (1-x) O 3 、PbMg (x) Ta (1-x) O 3 、PbMg (x) W (1-x) O 3 、BiFeO 3 、KNbO 3 、NaNbO 3 or Sr 2 Bi 2 TaO 9 , wherein 0< x <1.
  8. 8. The capacitor of claim 6, wherein the ferroelectric layer comprises HfO 2 or HfO 2 doped with a, and a comprises at least one selected from Sr, sc, Y, al, la, si, gd, zr, N or Ge.
  9. 9. The capacitor of claim 8 wherein the ferroelectric layer comprises Hafnium Zirconium Oxide (HZO).
  10. 10. The capacitor of claim 6, wherein the ferroelectric layer comprises at least one selected from Sc (x) Al (1-x) N、Y (x) Al (1-x) N、Mg (x) Zr (1-x) N、Ga (x) Sc (1-x) N、Sc (x) Al (1-x-y) Ga (y) N or Zn (x) Mg (1-x) O, wherein 0< x <1,0< y <1,0< x+y <1.
  11. 11. The capacitor of claim 1, wherein the interfacial layer has a negative charge.
  12. 12. The capacitor of claim 1 wherein the ferroelectric layer has a superlattice structure.
  13. 13. A semiconductor device, comprising: a substrate; A gate structure on the substrate; a source region and a drain region separated from each other in the substrate, and A capacitor according to any one of claims 1 to 12 over the substrate.
  14. 14. A method of manufacturing a capacitor according to any one of claims 1 to 12, the method comprising: Forming a ferroelectric layer on the first electrode; forming a second electrode on the ferroelectric layer, and An interface layer is formed between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode.

Description

Capacitor, semiconductor device including the same, and method of manufacturing the same Cross reference to related applications The present application is based on and claims priority from korean patent application No. 10-2024-0155683 filed at the korean intellectual property office on month 5 of 2024, the disclosure of which is incorporated herein by reference in its entirety. Technical Field The present disclosure relates to capacitors, semiconductor devices including capacitors, and/or methods of fabricating capacitors. Background As integrated circuit devices shrink, the space occupied by the capacitors also decreases. The capacitor is comprised of a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode, and the dielectric layer includes a high-k material to enhance capacitance. However, as the size of the capacitor decreases, leakage current may flow within the capacitor. Therefore, a technique for reducing the leakage current flowing in the capacitor while suppressing the reduction of the capacitance of the capacitor is required. Disclosure of Invention Some example embodiments provide a capacitor including an interface layer that enhances crystallization (crystallization) of a ferroelectric layer. Some example embodiments provide a semiconductor device including a capacitor having a ferroelectric layer with enhanced ferroelectricity. Some example embodiments provide methods of manufacturing capacitors. Additional aspects will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the presented example embodiments of the disclosure. According to one example embodiment of the present disclosure, a capacitor includes a first electrode, a ferroelectric layer on the first electrode, a second electrode on the ferroelectric layer, and an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode, wherein the interfacial layer includes a perovskite structure material including an oxide of a metal including divalent cations, tetravalent cations, and trivalent cations, and the trivalent cations include at least one selected from Sc, Y, la, ce, pr, nd, sm, dy, al, ga or In. The divalent cation of the interface layer may include at least one selected from Sr, ba, nd, pb, ca or Eu. The tetravalent cation of the interfacial layer may include at least one selected from Ti, ta, zr, hf or Sn. The first electrode and the second electrode may include at least one selected from perovskite structural materials or rock salt structural materials. The first electrode and the second electrode may comprise at least one selected from SrRuO3、SrIrO3、SrFeO3、SrCoO3、SrMnO3、CaRuO3、LaMnO3、La(x)Sr(1-x)MnO3、LaNiO3、LaFeO3、LaCoO3、BN、AlN、GaN、Si3N4、Ta3N5、Cu3N、InN、Zr3N4、Hf3N4、LaN、LuN、TiN、MoN、VN、TaN、WN、HfN、NbN or ZrN, where 0< x <1. The ferroelectric layer may include at least one selected from a perovskite structure, a fluorite structure, or a wurtzite structure. The ferroelectric layer may comprise at least one selected from BaTiO3、Ba(x)Sr(1-x)TiO3、PbTiO3、PbZrO3、PbTi(x)Zr(1-x)O3、PbMg(x)Nb(1-x)O3、PbZn(x)Nb(1-x)O3、PbFe(x)Nb(1-x)O3、PbNi(x)Nb(1-x)O3、PbMg(x)Ta(1-x)O3、PbMg(x)W(1-x)O3、BiFeO3、KNbO3、NaNbO3 or Sr 2Bi2TaO9, wherein 0< x <1. The ferroelectric layer may include HfO 2 or HfO 2 doped with a, and a may include at least one selected from Sr, sc, Y, al, la, si, gd, zr, N or Ge. The ferroelectric layer may include Hafnium Zirconium Oxide (HZO). The ferroelectric layer may comprise at least one selected from Sc(x)Al(1-x)N、Y(x)Al(1-x)N、Mg(x)Zr(1-x)N、Ga(x)Sc(1-x)N、Sc(x)Al(1-x-y)Ga(y)N or Zn (x)Mg(1-x) O, wherein 0< x <1,0< y <1,0< x+y <1. The ferroelectric layer may have a superlattice structure. The interfacial layer may have a negative charge. According to another example embodiment of the present disclosure, a semiconductor device includes a substrate (base), a gate structure on the substrate, source and drain regions separated from each other in the substrate, and a capacitor over the substrate. The capacitor includes a first electrode, a ferroelectric layer on the first electrode, a second electrode on the ferroelectric layer, and an interfacial layer between the first electrode and the ferroelectric layer and/or between the ferroelectric layer and the second electrode. The interfacial layer comprises a perovskite structure material. The interfacial layer comprises an oxide of a metal, and the metal comprises divalent cations, tetravalent cations, and trivalent cations. The trivalent cation includes at least one selected from Sc, Y, la, ce, pr, nd, sm, dy, al, ga or In. According to another example embodiment of the present disclosure, a method of manufacturing a capacitor includes forming a ferroelectric layer on a first electrode, forming a second electrode on the ferroelectric layer, and forming an interface l