CN-122002832-A - Preparation method of semiconductor structure

CN122002832ACN 122002832 ACN122002832 ACN 122002832ACN-122002832-A

Abstract

The embodiment of the disclosure provides a preparation method of a semiconductor structure, which comprises the steps of providing a substrate, forming fin structures extending along a first direction and isolation structures between the fin structures on the substrate, wherein the fin structures protrude out of the isolation structures. And performing a heat treatment process on the oxide to form an oxide layer. A target layer is formed overlying the surface of the oxide layer. Wherein the surface treatment operation is performed on the oxide layer before the target layer is formed after the heat treatment process is performed on the oxide layer, and/or the target layer at least comprises a preset target layer, and the preset operation is performed when the preset target layer is formed.

Inventors

ZHANG XIONG
Yao Situ
YUAN XINGHAN

Assignees

深圳市鹏芯微集成电路制造有限公司

Dates

Publication Date: 20260508
Application Date: 20241108

Claims (10)

1. A method of fabricating a semiconductor structure, the method comprising: Providing a substrate, forming fin structures extending along a first direction and isolation structures between the fin structures on the substrate, wherein the fin structures protrude out of the isolation structures; depositing an oxide, wherein the oxide covers the fin structure and the surface of the isolation structure; performing a heat treatment process on the oxide to form an oxide layer, and Forming a target layer covering the surface of the oxide layer; wherein a surface treatment operation is performed on the oxide layer before the target layer is formed after a heat treatment process is performed on the oxide layer; And/or the target layer at least comprises a preset target layer, and when the preset target layer is formed, preset operation is executed.
2. The method according to claim 1, wherein performing a surface treatment operation on the oxide layer before forming the target layer after performing a heat treatment process on the oxide layer comprises: and processing the oxide layer by adopting a preset material, and forming a dangling bond on the surface of the oxide layer.
3. The method according to claim 2, wherein the step of treating the oxide layer with a predetermined material to form dangling bonds on the surface of the oxide layer comprises: And treating the oxide layer by adopting a solution containing ammonia water and hydrogen peroxide to form an oxyhydrogen suspension bond on the surface of the oxide layer.
4. The method according to claim 2, wherein the step of treating the oxide layer with a predetermined material to form dangling bonds on the surface of the oxide layer comprises: and treating the oxide layer by adopting a solution containing dilute hydrofluoric acid to form a silicon-hydrogen suspension bond on the surface of the oxide layer.
5. The method according to claim 2, wherein the step of treating the oxide layer with a predetermined material to form dangling bonds on the surface of the oxide layer comprises: And connecting a preset suspension bond on the surface of the oxide layer.
6. The method of any one of claims 1-5, wherein forming the target layer comprises: forming a seed layer, wherein the seed layer covers the surface of the oxide layer; forming a first target layer on the seed layer, wherein the first target layer covers the surface of the seed layer; Executing a first etching process to remove a first target layer with a first preset thickness; A second target layer is formed on the first target layer, the second target layer covering a surface of the first target layer.
7. The method of claim 1, wherein the predetermined target layer is a seed layer, and wherein performing the predetermined operation when forming the predetermined target layer comprises: Forming a seed layer by adopting a first time length, wherein the seed layer covers the surface of the oxide layer, and the first time length is longer than a first preset time length; forming a first target layer on the seed layer, wherein the first target layer covers the surface of the seed layer; Executing a first etching process to remove a first target layer with a first preset thickness; A second target layer is formed on the first target layer, the second target layer covering a surface of the first target layer.
8. The method of claim 1, wherein the predetermined target layer is a first target layer, and wherein performing the predetermined operation when forming the predetermined target layer comprises: forming a seed layer, wherein the seed layer covers the surface of the oxide layer; Forming a first target layer on the seed layer by adopting a second time length, wherein the first target layer covers the surface of the seed layer, and the second time length is longer than a second preset time length; Executing a first etching process to remove a first target layer with a first preset thickness; A second target layer is formed on the first target layer, the second target layer covering a surface of the first target layer.
9. The method of manufacturing of claim 1, wherein forming fin structures extending in a first direction and isolation structures between the fin structures on the substrate comprises: Performing an etching process on the substrate, and removing part of the substrate to form the fin-shaped structure on the substrate; and filling isolation materials to form isolation structures among the fin structures, wherein the fin structures protrude out of the surfaces of the isolation structures.
10. The method of claim 1, wherein the material of the oxide layer comprises silicon oxide and the material of the target layer comprises amorphous silicon.

Description

Preparation method of semiconductor structure Technical Field The present disclosure relates to the field of semiconductor manufacturing, and in particular, to a method for manufacturing a semiconductor structure. Background With the development and progress of technology, semiconductor devices are continually advancing toward miniaturization and high integration, and the size of semiconductor devices is becoming smaller and smaller. In semiconductor structures, transistor structures are important components, which are usually obtained through process steps such as material deposition, material etching, etc., wherein in the process of preparing a material serving as a gate dielectric layer, in order to improve the quality of the formed material, a heat treatment process is usually performed to obtain a high-quality material layer. However, after this step, defects and the like are easily generated in the subsequently deposited material layer, which affect the performance of the semiconductor structure. Therefore, there are many problems in the manufacturing process of semiconductor devices, and improvement is still needed. Disclosure of Invention The embodiment of the disclosure provides a preparation method of a semiconductor structure, which comprises the steps of providing a substrate, forming fin structures extending along a first direction and isolation structures between the fin structures on the substrate, depositing oxide, and performing a heat treatment process on the oxide to form an oxide layer and a target layer. The fin structure protrudes out of the isolation structure, and the oxide covers the fin structure and the surface of the isolation structure; Wherein the target layer covers the surface of the oxide layer; wherein after performing a heat treatment process on the oxide, performing a surface treatment operation on the oxide layer before forming the target layer; And/or the target layer at least comprises a preset target layer, and when the preset target layer is formed, the preset operation is executed. In some embodiments, performing a surface treatment operation on the oxide layer after performing a heat treatment process on the oxide layer and before forming the target layer further includes treating the oxide layer with a predetermined material to form dangling bonds on a surface of the oxide layer. In some embodiments, the oxide layer is treated with a predetermined material to form a dangling bond on the surface of the oxide layer, and further includes treating the oxide layer with a solution containing ammonia and hydrogen peroxide to form an oxyhydrogen dangling bond on the surface of the oxide layer. In some embodiments, the oxide layer is treated with a predetermined material to form dangling bonds on the surface of the oxide layer, and further comprising treating the oxide layer with a dilute hydrofluoric acid-containing solution to form dangling bonds on the surface of the oxide layer. In some embodiments, the oxide layer is treated with a predetermined material to form dangling bonds on a surface of the oxide layer, and further comprising attaching the predetermined dangling bonds to the surface of the oxide layer. In some embodiments, forming the target layer includes forming a seed layer, forming a first target layer on the seed layer, performing a first etching process, and forming a second target layer on the first target layer. Wherein the seed layer covers the surface of the oxide layer. Wherein the first target layer covers the surface of the seed layer. And removing the first target layer with the first preset thickness in the first etching process. Wherein the second target layer covers the surface of the first target layer. In some embodiments, the pre-set target layer is a seed layer, and performing a pre-set operation when forming the pre-set target layer includes forming the seed layer with a first time length, forming a first target layer on the seed layer, performing a first etch process, and forming a second target layer on the first target layer. The seed layer covers the surface of the oxide layer, wherein the first time period is longer than a first preset time period. Wherein the first target layer covers the surface of the seed layer. And removing the first target layer with the first preset thickness in the first etching process. Wherein the second target layer covers the surface of the first target layer. In some embodiments, the preset target layer is a first target layer, and when the preset target layer is formed, performing a preset operation including forming a seed layer, forming the first target layer on the seed layer for a second period of time, performing a first etching process, and forming a second target layer on the first target layer. Wherein the seed layer covers the surface of the oxide layer. The first target layer covers the surface of the seed layer, and the second time period is longer than the second preset time period. And execut