Search

CN-122002854-A - Radio frequency power amplifier tube and preparation method thereof

CN122002854ACN 122002854 ACN122002854 ACN 122002854ACN-122002854-A

Abstract

The disclosure provides a radio frequency power amplifier tube and a preparation method thereof, and belongs to the field of power electronics. The radio frequency power amplifier tube comprises a substrate, a heterojunction layer, a first dielectric layer, a grid electrode, a source electrode and a drain electrode, wherein the heterojunction layer and the first dielectric layer are sequentially laminated on the substrate, a plurality of through holes exposing the heterojunction layer are formed in the surface of the first dielectric layer, the grid electrode, the source electrode and the drain electrode are respectively located in different through holes and are electrically connected with the heterojunction layer, the grid electrode comprises a first field plate layer located outside the through holes, the first field plate layer is located on the surface, far away from the substrate, of the first dielectric layer, and the first field plate layer extends towards the direction in which the drain electrode is located. The embodiment of the disclosure can improve the breakdown voltage of the radio frequency power amplifier tube and improve the problem that the radio frequency power amplifier tube is easy to break down and lose efficacy.

Inventors

  • WANG JUNNAN
  • CHEN KAI
  • WANG YILEI
  • WANG JIANGBO

Assignees

  • 京东方华灿光电(浙江)有限公司

Dates

Publication Date
20260508
Application Date
20251219

Claims (10)

  1. 1. The radio frequency power amplification tube is characterized by comprising a substrate (10), a heterojunction layer (20), a first dielectric layer (31), a grid electrode (43), a source electrode (41) and a drain electrode (42), wherein the heterojunction layer (20) and the first dielectric layer (31) are sequentially laminated on the substrate (10); the surface of the first dielectric layer (31) is provided with a plurality of through holes exposing the heterojunction layer (20), and the grid electrode (43), the source electrode (41) and the drain electrode (42) are respectively positioned in different through holes and are electrically connected with the heterojunction layer (20); The grid electrode (43) comprises a first field plate layer (431) located outside the through hole, the first field plate layer (431) is located on the surface, away from the substrate (10), of the first dielectric layer (31), and the first field plate layer (431) extends towards the direction where the drain electrode (42) is located.
  2. 2. The rf power amplifier tube according to claim 1, wherein a distance (L1) between the first field plate layer (431) and a side wall of the via hole where the gate electrode (43) is located, from the nearest side of the drain electrode (42), ranges from 1 μm to 2 μm.
  3. 3. The radio frequency power amplifier tube according to claim 2, further comprising a second dielectric layer (32), the second dielectric layer (32) being located on a surface of the first dielectric layer (31) remote from the substrate (10) and on a side wall of the first field plate layer (431); The gate (43) further comprises a second field plate layer (432), the second field plate layer (432) being located on a surface of the first field plate layer (431) remote from the substrate (10), the second field plate layer (432) being located on a surface of the second field plate layer (432) remote from the substrate (10) and extending in a direction in which the drain (42) is located.
  4. 4. A radio frequency power amplifier tube according to claim 3, characterized in that the distance (L2) between the second field plate layer (432) and the nearest side of the drain (42) and the nearest side of the first field plate layer (431) and the drain (42) ranges from 1 μm to 2 μm.
  5. 5. The radio frequency power amplifier tube according to any one of claims 1 to 4, wherein the width (L3) of the via hole where the gate electrode (43) is located is in the range of 40nm to 60nm.
  6. 6. A radio frequency power amplifier tube according to any of claims 1 to 4, characterized in that the substrate (10) comprises β -Ga 2 O 3 .
  7. 7. The radio frequency power amplifier tube according to any one of claims 1 to 4, further comprising a superlattice buffer layer (51), the superlattice buffer layer (51) being located between the substrate (10) and the heterojunction layer (20); The superlattice buffer layer (51) includes a plurality of stacked AlGaN layers, the Al component content of which decreases in a direction from the substrate (10) to the heterojunction layer (20).
  8. 8. The radio frequency power amplifier tube according to any one of claims 1 to 4, wherein the concentration of the two-dimensional electron gas of the heterojunction layer (20) is greater than or equal to 2.5 x10 13 cm -2 , and the electron mobility of the two-dimensional electron gas of the heterojunction layer (20) is greater than 1800cm 2 /V-s.
  9. 9. The radio frequency power amplifier tube according to any of claims 1 to 4, wherein the shortest distance (L4) of the gate (43) to the drain (42) is larger than the shortest distance (L5) of the gate (43) to the source (41); The shortest distance (L4) from the gate electrode (43) to the drain electrode (42) ranges from 1.5 μm to 2.5 μm, and the shortest distance (L5) from the gate electrode (43) to the source electrode (41) ranges from 0.5 μm to 1.5 μm.
  10. 10. The preparation method of the radio frequency power amplifier tube is characterized by comprising the following steps of: Forming a heterojunction layer on a substrate; Forming a first dielectric layer on the heterojunction layer, wherein the surface of the first dielectric layer is provided with a plurality of through holes exposing the heterojunction layer; and forming a grid electrode, a source electrode and a drain electrode in different through holes respectively, so that the grid electrode, the source electrode and the drain electrode are electrically connected with the heterojunction layer, wherein the grid electrode comprises a first field plate layer positioned outside the through holes, the first field plate layer is positioned on the surface of the first dielectric layer, which is far away from the substrate, and the first field plate layer extends towards the direction of the drain electrode.

Description

Radio frequency power amplifier tube and preparation method thereof Technical Field The disclosure relates to the field of power electronics, in particular to a radio frequency power amplifier tube and a preparation method thereof. Background The radio frequency power amplifier tube is a transistor specially designed for high-frequency high-power application, is positioned at the rear end of the transmitting system and is responsible for amplifying the modulated radio frequency small signal to a power level which is enough to drive the antenna to transmit. The transistor is used for converting the energy of the direct-current power supply into the radio-frequency alternating-current energy efficiently. With the development of technology, power amplifier tubes based on third-generation semiconductor materials such as gallium nitride and the like are widely used due to the characteristics of wide forbidden band, high electron mobility and high breakdown field strength. In the related art, the radio frequency power amplifier tube comprises a substrate, a heterojunction layer, a grid electrode, a source electrode and a drain electrode, wherein the heterojunction layer is positioned on the substrate, the grid electrode, the source electrode and the drain electrode are positioned on the heterojunction layer, and the source electrode and the drain electrode are respectively positioned on two sides of the grid electrode. However, the rf power amplifier tube is very prone to breakdown failure under the action of external overstress (such as overvoltage, electrostatic discharge, and load mismatch). Particularly, as the semiconductor process is advanced toward higher integration, the transistor size is continuously reduced, and the breakdown voltage is also reduced, which further aggravates the reliability risk of the transistor in high power operation. Disclosure of Invention The embodiment of the disclosure provides a radio frequency power amplifier tube and a preparation method thereof, which can improve the breakdown voltage of the radio frequency power amplifier tube and improve the problem that the radio frequency power amplifier tube is easy to break down and lose efficacy. The technical scheme is as follows: On one hand, the embodiment of the disclosure provides a radio frequency power amplification tube, which comprises a substrate, a heterojunction layer, a first dielectric layer, a grid electrode, a source electrode and a drain electrode, wherein the heterojunction layer and the first dielectric layer are sequentially stacked on the substrate, a plurality of through holes exposing the heterojunction layer are formed in the surface of the first dielectric layer, the grid electrode, the source electrode and the drain electrode are respectively located in different through holes and are electrically connected with the heterojunction layer, the grid electrode comprises a first field plate layer located outside the through holes, the first field plate layer is located on the surface, far away from the substrate, of the first dielectric layer, and the first field plate layer extends towards the direction in which the drain electrode is located. Optionally, a distance between the nearest side surface of the first field plate layer to the drain electrode and the side wall of the via hole where the gate electrode is located ranges from 1 μm to 2 μm. Optionally, the radio frequency power amplifier tube further comprises a second dielectric layer, wherein the second dielectric layer is located on the surface, away from the substrate, of the first dielectric layer and located on the side wall of the first field plate layer, the grid electrode further comprises a second field plate layer, the second field plate layer is located on the surface, away from the substrate, of the first field plate layer, and the second field plate layer is located on the surface, away from the substrate, of the second field plate layer and extends towards the direction where the drain electrode is located. Optionally, a distance between the second field plate layer and a side closest to the drain electrode and a distance between the first field plate layer and a side closest to the drain electrode ranges from 1 μm to 2 μm. Optionally, the width of the via hole where the gate is located is in a range of 40nm to 60nm. Optionally, the substrate comprises β -Ga 2O3. Optionally, the radio frequency power amplifier tube further comprises a superlattice buffer layer, wherein the superlattice buffer layer is positioned between the substrate and the heterojunction layer, the superlattice buffer layer comprises a plurality of layers of stacked AlGaN layers, and the Al component content of the AlGaN layers decreases in the direction from the substrate to the heterojunction layer. Optionally, the concentration of the two-dimensional electron gas of the heterojunction layer is greater than or equal to 2.5x10 13cm-2, and the electron mobility of the two-d