CN-122002873-A - Semiconductor device with a semiconductor layer having a plurality of semiconductor layers

Abstract

There is provided a semiconductor device including a lower sheet structure including a plurality of first lower semiconductor layers and a plurality of second lower semiconductor layers alternately stacked, an upper sheet structure including a plurality of first upper semiconductor layers and a plurality of second upper semiconductor layers alternately stacked on the lower sheet structure, a lower semiconductor pattern on at least one side of the lower sheet structure, an upper semiconductor pattern on at least one side of the upper sheet structure, and a PN junction structure including a P-type semiconductor material and an N-type semiconductor material between the lower sheet structure and the upper sheet structure. The PN junction structure includes a first doped layer on the lower sheet structure and having a first type conductivity, and a second doped layer on the first doped layer and having a second type conductivity.

Inventors

• Jin Biguang
• SONG SHENGXUAN
• Pu Xingyi
• Pu Rongxi
• JIN QINGLIN
• WEN CHANGZHU
• SONG YINGXI

Assignees

• 三星电子株式会社

Dates

Publication Date

20260508

Application Date

20250619

Priority Date

20241108

Claims (20)

1. 1. A semiconductor device, comprising: a lower sheet structure including a plurality of first lower semiconductor layers and a plurality of second lower semiconductor layers alternately stacked; an upper sheet structure including a plurality of first upper semiconductor layers and a plurality of second upper semiconductor layers alternately stacked on the lower sheet structure; A lower semiconductor pattern on at least one side of the lower sheet structure; an upper semiconductor pattern on at least one side of the upper sheet structure, and A PN junction structure between the lower sheet structure and the upper sheet structure, the PN junction structure comprising a P-type semiconductor material and an N-type semiconductor material, Wherein, PN junction structure includes: A first doped layer on the lower sheet-like structure and having a first type of conductivity, and A second doped layer on the first doped layer and having a second type conductivity.
2. 2. The semiconductor device of claim 1, wherein, The lower semiconductor pattern and the lower sheet structure have the same conductivity, and The upper semiconductor pattern and the upper sheet structure have the same conductivity.
3. 3. The semiconductor device of claim 2, wherein, The lower sheet structure has the first type of conductivity, and The upper sheet structure has the second type of conductivity.
4. 4. The semiconductor device according to claim 3, wherein, The doping concentration of the first type conductivity impurity in the first doping layer is less than or equal to the doping concentration of the first type conductivity impurity in the lower semiconductor pattern.
5. 5. The semiconductor device according to claim 3, wherein, The doping concentration of the first type conductivity impurity in the first doped layer is less than or equal to the doping concentration of the first type conductivity impurity in the lower sheet structure.
6. 6. The semiconductor device according to claim 3, wherein, The plurality of first lower semiconductor layers and the plurality of second lower semiconductor layers each have the first type conductivity, and The doping concentration of the first type conductivity impurity in the plurality of first lower semiconductor layers is less than or equal to the doping concentration of the first type conductivity impurity in the plurality of second lower semiconductor layers.
7. 7. The semiconductor device of claim 1, wherein, The first type conductivity impurity in the first doped layer has a doping concentration of 10 17 cm -3 to 10 19 cm -3 .
8. 8. The semiconductor device of claim 1, wherein, The plurality of first lower semiconductor layers and the plurality of first upper semiconductor layers each include silicon, and The plurality of second lower semiconductor layers and the plurality of second upper semiconductor layers each comprise silicon germanium.
9. 9. The semiconductor device of claim 8, wherein, The PN junction structure comprises silicon germanium, and The germanium content (at%) in the PN junction structure is different from the germanium content (at%) in the plurality of second upper semiconductor layers.
10. 10. The semiconductor device of claim 1, wherein, At least a portion of the second doping layer overlaps the upper semiconductor pattern in a first direction parallel to an upper surface of the lower sheet-like structure.
11. 11. The semiconductor device of claim 1, wherein, The upper surface of the first doped layer is closer to the upper surface of the lower sheet structure than the lower surface of the upper sheet structure.
12. 12. The semiconductor device of claim 1, further comprising: a dummy main gate structure on the upper sheet structure, Wherein the dummy main gate structure covers a side surface of the upper sheet structure, a side surface of the lower sheet structure, and a side surface of the PN junction structure.
13. 13. The semiconductor device of claim 1, further comprising: A blocking structure between the lower semiconductor pattern and the upper semiconductor pattern, Wherein at least a portion of the blocking structure overlaps the PN junction structure in a first direction parallel to the upper surface of the lower sheet structure.
14. 14. The semiconductor device of claim 13, wherein, The height of the upper surface of the first doped layer in the vertical direction is closer to the height of the upper surface of the lower sheet-like structure in the vertical direction than the height of the upper surface of the barrier structure in the vertical direction, wherein, The vertical direction is a direction perpendicular to the upper surface of the lower sheet structure.
15. 15. The semiconductor device of claim 13, wherein, The thickness of the PN junction structure is larger than that of the blocking structure.
16. 16. A semiconductor device, comprising: A lower sheet-like structure having a first type conductivity and including a plurality of first lower semiconductor layers and a plurality of second lower semiconductor layers alternately stacked; An upper sheet structure having a second type conductivity and including a plurality of first upper semiconductor layers and a plurality of second upper semiconductor layers alternately stacked on the lower sheet structure; A lower semiconductor pattern on at least one side of the lower sheet-like structure, and A PN junction structure between the plurality of first lower semiconductor layers and the plurality of first upper semiconductor layers, the PN junction structure including a P-type semiconductor material and an N-type semiconductor material and a material identical to at least one of the plurality of second lower semiconductor layers and the plurality of second upper semiconductor layers, Wherein, PN junction structure includes: A first doped layer on the lower sheet structure and having the first type of conductivity, and A second doped layer between the first doped layer and the upper sheet structure and having the second type conductivity.
17. 17. The semiconductor device of claim 16, wherein, A doping concentration of the first-type conductive impurity in the first doped layer is less than or equal to a doping concentration of the first-type conductive impurity in the lower sheet-like structure, and The doping concentration of the second type conductive impurities in the second doped layer is less than or equal to the doping concentration of the second type conductive impurities in the upper sheet structure.
18. 18. The semiconductor device of claim 17, wherein, The doping concentration of the first-type conductive impurities in the plurality of first lower semiconductor layers is less than or equal to the doping concentration of the first-type conductive impurities in the plurality of second lower semiconductor layers, and The doping concentration of the second-type conductive impurities in the plurality of first upper semiconductor layers is less than or equal to the doping concentration of the second-type conductive impurities in the plurality of second upper semiconductor layers.
19. 19. The semiconductor device of claim 17, wherein, The doping concentration of the first type conductive impurity in the lower sheet-like structure is less than or equal to the doping concentration of the first type conductive impurity in the lower semiconductor pattern.
20. 20. A semiconductor device, comprising: a base insulating layer; A lower sheet structure including a plurality of first lower semiconductor layers and a plurality of second lower semiconductor layers alternately stacked on the base insulating layer; an upper sheet structure including a plurality of first upper semiconductor layers and a plurality of second upper semiconductor layers alternately stacked on the lower sheet structure; A lower semiconductor pattern on at least one side of the lower sheet structure and having a first type conductivity; An upper semiconductor pattern on at least one side of the upper sheet structure and having a second type conductivity; A barrier structure between the lower semiconductor pattern and the upper semiconductor pattern, and A PN junction structure between the lower sheet structure and the upper sheet structure and overlapping the blocking structure in a first direction parallel to an upper surface of the base insulating layer, the PN junction structure including a P-type semiconductor material and an N-type semiconductor material, Wherein, PN junction structure includes: A first doped layer on the lower sheet structure and having the first type of conductivity, and A second doped layer on the first doped layer and having the second type conductivity, and The doping concentration of the first type conductivity impurity in the first doping layer is less than or equal to the doping concentration of the first type conductivity impurity in the lower semiconductor pattern.

Description

Semiconductor device with a semiconductor layer having a plurality of semiconductor layers Cross Reference to Related Applications The present application claims priority from korean patent application No. 10-2024-0158213, filed on 8 th 11 of 2024, to korean intellectual property office, the entire contents of which are incorporated herein by reference. Technical Field Example embodiments of the present disclosure relate to a semiconductor device. Background A semiconductor is a material that belongs to the intermediate region between a conductor and an insulator and indicates a material that is electrically conductive under desired (and/or alternatively predetermined) conditions. Such semiconductor materials may be used in the fabrication of various semiconductor devices, such as memory devices. Semiconductor devices may be used in a variety of electronic devices. With the continued development of the electronics industry, the need for advanced features for semiconductor devices has increased. For example, there is an increasing demand for semiconductor devices that achieve higher reliability, higher speed, and/or versatility. As a result, structures within semiconductor devices continue to become increasingly complex and integrated. Disclosure of Invention Some example embodiments of the present disclosure provide a transistor structure and a stacked structure disposed on a base insulating layer and/or a semiconductor substrate. Accordingly, a stacked structure including a diode element or the like can be formed together with a transistor structure without significantly increasing the number of manufacturing processes. According to some example embodiments, a semiconductor device includes a lower sheet structure including a plurality of first lower semiconductor layers and a plurality of second lower semiconductor layers alternately stacked, an upper sheet structure including a plurality of first upper semiconductor layers and a plurality of second upper semiconductor layers alternately stacked on the lower sheet structure, a lower semiconductor pattern on at least one side of the lower sheet structure, an upper semiconductor pattern on at least one side of the upper sheet structure, and a PN junction structure including a P-type semiconductor material and an N-type semiconductor material between the lower sheet structure and the upper sheet structure. The PN junction structure includes a first doped layer on the lower sheet structure and having a first type conductivity, and a second doped layer on the first doped layer and having a second type conductivity. According to some example embodiments, a semiconductor device includes a lower sheet structure having a first type conductivity and including a plurality of first lower semiconductor layers and a plurality of second lower semiconductor layers alternately stacked, an upper sheet structure having a second type conductivity and including a plurality of first upper semiconductor layers and a plurality of second upper semiconductor layers alternately stacked on the lower sheet structure, a lower semiconductor pattern on at least one side of the lower sheet structure, and a PN junction structure between the plurality of first lower semiconductor layers and the plurality of first upper semiconductor layers, the PN junction structure including a P-type semiconductor material and an N-type semiconductor material and a material identical to at least one of the plurality of second lower semiconductor layers and the plurality of second upper semiconductor layers. The PN junction structure includes a first doped layer on the lower sheet structure and having a first type conductivity, and a second doped layer between the first doped layer and the upper sheet structure and having a second type conductivity. According to some example embodiments, a semiconductor device includes a base insulating layer, a lower sheet structure including a plurality of first lower semiconductor layers and a plurality of second lower semiconductor layers alternately stacked on the base insulating layer, an upper sheet structure including a plurality of first upper semiconductor layers and a plurality of second upper semiconductor layers alternately stacked on the lower sheet structure, a lower semiconductor pattern on at least one side of the lower sheet structure and having a first type conductivity, an upper semiconductor pattern on at least one side of the upper sheet structure and having a second type conductivity, a blocking structure between the lower semiconductor pattern and the upper semiconductor pattern, and a PN junction structure between the lower sheet structure and the upper sheet structure and overlapping the blocking structure in a first direction parallel to an upper surface of the base insulating layer, the PN junction structure including a P-type semiconductor material and an N-type semiconductor material. The PN junction structure includes a first doped layer on th