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CN-122002880-A - Semiconductor device with a semiconductor device having a plurality of semiconductor chips

CN122002880ACN 122002880 ACN122002880 ACN 122002880ACN-122002880-A

Abstract

The semiconductor device has at least one terminal including a cylindrical holder having conductivity, and a metal pin inserted into the holder. The semiconductor device further includes a terminal support body for supporting the holder, and a sealing resin for covering a part of the holder and the terminal support body. The sealing resin has a resin main surface facing one side in the thickness direction. The bracket has a first surface located at one end in the thickness direction and a first outer surface extending in the thickness direction. The first surface is located at a position different from the resin main surface in the thickness direction. The first outer side surface is in contact with the sealing resin. The metal pins protrude further toward one side in the thickness direction than the resin main surface.

Inventors

  • TANIGAWA KOHEI
  • Ikeda Daishin

Assignees

  • 罗姆股份有限公司

Dates

Publication Date
20260508
Application Date
20230413
Priority Date
20220502

Claims (11)

  1. 1. A semiconductor device is characterized by comprising: At least one terminal including a cylindrical holder having conductivity and a metal pin inserted into the holder; A terminal support body including a first insulating layer and a metal layer formed on an upper surface of the first insulating layer and supporting the bracket; a support substrate including a second insulating layer, a support conductor, and a back metal layer, and A sealing resin covering a part of the holder, a part of the support substrate, and the terminal support body, The sealing resin has a resin main surface facing one side in the thickness direction, The terminal support is interposed between the support substrate and the at least one terminal, The bracket has a first surface located at one end in the thickness direction and a first outer surface extending in the thickness direction, The first surface is located at a position different from the resin main surface in the thickness direction, The first outer side surface is connected with the sealing resin, The metal pins protrude further toward one side in the thickness direction than the resin main surface, The bracket includes a cylindrical portion extending in the thickness direction, and a first flange portion connected to an end portion of one side of the cylindrical portion in the thickness direction, The first flange portion has the first surface facing one side in the thickness direction and a second surface located on the other side in the thickness direction than the first surface and facing the other side in the thickness direction, The cylindrical portion has the first outer side surface, All of the first outer surface and the second surface are in contact with the sealing resin, The sealing resin has a first concave portion recessed from the resin main surface toward the other side in the thickness direction, The first flange portion is located on the other side in the thickness direction with respect to the resin main surface, The first concave portion overlaps with the entire cylindrical portion when viewed in the thickness direction, The first recess has a recess edge which is located on the other side in the thickness direction and which is in contact with the first surface.
  2. 2. The semiconductor device according to claim 1, wherein, At least a part of the first surface is exposed from the sealing resin.
  3. 3. The semiconductor device according to claim 2, wherein, All of the first surface is exposed from the sealing resin, The first recess has a recess inner surface connected to the resin main surface, and a recess bottom surface connected to the other end of the recess inner surface in the thickness direction and facing one side in the thickness direction, The bottom surface of the recess surrounds the first surface when viewed in the thickness direction.
  4. 4. The semiconductor device according to claim 1, wherein, The first recess has a tapered inner side surface connected to an end edge of the recess, The tapered inner surface is inclined so that the inner diameter increases as the inner diameter extends toward one side in the thickness direction.
  5. 5. The semiconductor device according to claim 1, wherein, The outer peripheral edge of the first flange portion surrounds the first recess when viewed in the thickness direction.
  6. 6. The semiconductor device according to any one of claims 1 to 5, wherein, The distance between the resin main surface and the first surface in the thickness direction, that is, the first dimension, is smaller than the length of the bracket in the thickness direction, that is, the second dimension.
  7. 7. The semiconductor device according to claim 6, wherein, The ratio of the first dimension to the second dimension is 1/3 or more.
  8. 8. The semiconductor device according to any one of claims 1 to 5, wherein, The first resin filling part is filled in the first concave part.
  9. 9. The semiconductor device according to claim 1, wherein, At least one semiconductor element electrically connected to the at least one terminal is further provided, The at least one semiconductor element is supported by the support conductor.
  10. 10. The semiconductor device according to claim 9, wherein, The at least one terminal is a control terminal for controlling the at least one semiconductor element.
  11. 11. The semiconductor device according to claim 10, wherein, The support conductor includes a first conductive portion and a second conductive portion spaced apart in a first direction orthogonal to the thickness direction, The at least one semiconductor element includes a first switching element coupled to the first conductive portion, and a second switching element coupled to the second conductive portion, The control terminal includes a first control terminal for controlling the first switching element, and a second control terminal for controlling the second switching element.

Description

Semiconductor device with a semiconductor device having a plurality of semiconductor chips The application is a divisional application, the application number of the main application is 2023800373377, the application date is 2023, 04 and 13, and the application is a semiconductor device. Technical Field The present disclosure relates to semiconductor devices. Background Conventionally, a semiconductor device including a power switching element such as a MOSFET (Metal Oxide Semiconductor FIELD EFFECT Transistor) or an IGBT (Insulated Gate Bipolar Transistor or an insulated gate bipolar Transistor) is known. Such semiconductor devices are mounted in all electronic devices ranging from industrial devices to home appliances, information terminals, and automotive devices. Patent document 1 discloses a conventional semiconductor device (power module). The semiconductor device described in patent document 1 includes a semiconductor element and a support substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of Si (silicon). The support substrate supports the semiconductor element. The support substrate includes an insulating base material and conductor layers laminated on both surfaces of the base material. The base material is made of, for example, ceramic. Each conductor layer is made of, for example, cu (copper), and a semiconductor element is bonded to one conductor layer. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2021-190505 Disclosure of Invention Problems to be solved by the invention In recent years, energy saving, high performance, miniaturization, and the like of electronic devices have been demanded. Therefore, there is a need for improvement in performance, miniaturization, and the like of a power module mounted on an electronic device. An object of the present disclosure is to provide a semiconductor device improved as compared with the conventional semiconductor device. In particular, in view of the above, it is an object of the present disclosure to provide a semiconductor device suitable for achieving improved performance and downsizing. The semiconductor device provided by the first aspect of the present disclosure includes at least one terminal including a cylindrical holder having conductivity and a metal pin inserted into the holder, a terminal support body supporting the holder, and a sealing resin covering a part of the holder and the terminal support body, the sealing resin having a resin main surface facing one side in a thickness direction, the holder having a first surface located at an end portion of the one side in the thickness direction and a first outer side surface extending in the thickness direction, the first surface being located at a position different from the resin main surface in the thickness direction, the first outer side surface being in contact with the sealing resin, the metal pin protruding more toward the one side in the thickness direction than the resin main surface. The semiconductor device provided by the second aspect of the present disclosure includes a support substrate having a main surface facing one side in a thickness direction, at least one terminal including a holder disposed on the main surface and having conductivity, and a metal pin inserted into the holder, and a sealing resin having a resin main surface facing one side in the thickness direction and covering at least a part of the support substrate, wherein at least one of the at least one terminal is exposed from the sealing resin, and the metal pin protrudes to one side in the thickness direction than the resin main surface. Effects of the invention According to the above configuration, in the semiconductor device, a preferable structure can be provided in terms of achieving improvement in performance, miniaturization, and the like. Other features and advantages of the present disclosure will become apparent from the following detailed description, which proceeds with reference to the accompanying drawings. Drawings Fig. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. Fig. 2 is a perspective view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. Fig. 3 is a perspective view showing a main part of a semiconductor device according to a first embodiment of the present disclosure. Fig. 4 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. Fig. 5 is a top view showing a main portion of a semiconductor device according to a first embodiment of the present disclosure. Fig. 6 is a main part side view showing a semiconductor device of the first embodiment of the present disclosure. Fig. 7 is an enlarged plan view showing a main portion of a semiconductor device according to a first embodiment of the present disclosure. Fig. 8 is a top view showing