CN-122002907-A - ESD protection device with SCR structure

Abstract

The application provides an ESD protection device with an SCR structure, wherein a block-shaped second heavily doped region (N+) and a block-shaped third heavily doped region (P+) in a first well region (PW) are arranged in a staggered manner, and a block-shaped fifth heavily doped region (P+) and a block-shaped sixth heavily doped region (N+) in a second well region (NW) are arranged in a staggered manner, because the SCR structure is formed by coupling PNP and NPN, the fifth heavily doped region (P+) in the second well region (NW) is an emitter of PNP, and the second heavily doped region (N+) in the first well region (PW) is an emitter of NPN, so that the structure reduces the emitter area of the BJT (bipolar junction transistor), reduces the transport efficiency of a base region, can effectively reduce the current gain beta of the PNP and the NPN transistor, and finally leads to the improvement of the maintenance voltage Vh of the SCR structure in the ESD protection device.

Inventors

• FAN WEISHENG

Assignees

• 华虹半导体(无锡)有限公司

Dates

Publication Date

20260508

Application Date

20260107

Claims (10)

1. 1. An ESD protection device having an SCR structure, comprising: A substrate; A first well region located in the substrate; A first shallow trench isolation structure in a ring shape, wherein the first shallow trench isolation structure is positioned in the substrate and is arranged around the first well region; a second well region in a ring shape, wherein the second well region is positioned in the substrate and is arranged around the first shallow trench isolation structure; a first heavily doped region of a first conductivity type in a stripe shape, the first heavily doped region being located in the first well region; A plurality of second heavily doped regions of the second conductivity type in the form of blocks; The second heavily doped regions and the third heavily doped regions are arranged in a staggered mode, and the second heavily doped regions and the third heavily doped regions which are arranged in a staggered mode are located in the first well regions at two sides of the first heavily doped regions; a fourth heavily doped region of the second conductivity type in the shape of a ring, the fourth heavily doped region being located in the second well region and near an edge of the second well region; a fifth heavily doped region of the first conductivity type in a block shape; A sixth heavily doped region of the second conductivity type in a block shape, wherein the fifth heavily doped region and the sixth heavily doped region are staggered, and the staggered fifth heavily doped region and sixth heavily doped region are positioned in the second well region between the fourth heavily doped region and the first shallow trench isolation structure; The first heavily doped region, the second heavily doped region and the third heavily doped region are all connected with low level, and the fourth heavily doped region, the fifth heavily doped region and the sixth heavily doped region are all connected with high level.
2. 2. The ESD protection device with the SCR structure according to claim 1, wherein in the second heavily doped region and the third heavily doped region that are staggered, a certain distance is provided between every two adjacent second heavily doped regions and third heavily doped regions.
3. 3. The ESD protection device with the SCR structure of claim 1, wherein in the fifth heavily doped region and the sixth heavily doped region that are staggered, a certain distance is provided between every two adjacent fifth heavily doped regions and sixth heavily doped regions.
4. 4. The ESD protection device of claim 1 wherein each of said third heavily doped regions is connected to said first heavily doped region, respectively, and wherein each of said second heavily doped regions is spaced from said first heavily doped region by a distance.
5. 5. The ESD protection device of claim 1 wherein each of said sixth heavily doped regions is connected to said fourth heavily doped region, respectively, and wherein each of said fifth heavily doped regions is spaced from said fourth heavily doped region by a distance.
6. 6. The ESD protection device with the SCR structure of claim 1 further comprising a second shallow trench isolation structure in the shape of a ring, the second shallow trench isolation structure being located in the substrate and disposed around the second well region.
7. 7. The ESD protection device with the SCR structure of claim 1 further comprising a third well region in the shape of a ring, the third well region being located in the substrate and disposed around the second shallow trench isolation structure.
8. 8. The ESD protection device with the SCR structure of claim 7 further comprising a seventh heavily doped region in the shape of a ring, the seventh heavily doped region being located in the third well region, the seventh heavily doped region being grounded.
9. 9. The ESD protection device with the SCR structure of claim 1, wherein the first well region has a P-type conductivity and the second well region has an N-type conductivity.
10. 10. The ESD protection device with the SCR structure of claim 1, wherein the first conductivity type is P-type and the second conductivity type is N-type.

Description

ESD protection device with SCR structure Technical Field The application relates to the technical field of semiconductor manufacturing, in particular to an ESD protection device with an SCR structure. Background In the life and production and manufacturing processes of human beings, a phenomenon of charge accumulation and discharge, called static electricity, exists every moment. Especially, the instant of releasing charges has the characteristics of short action time and large instant current, and has great harm to industrial manufacture, especially advanced integrated circuit industry. With the advance of integrated circuits to advanced processes, the thickness of the gate oxide layer is reduced to the nanometer level, and the gate oxide layer is extremely easy to be damaged in the electrostatic discharge process. Conventional ESD (Electrostatic Discharge Protection Device ) devices, such as GGNMOS (Gate-Grounded NMOS, gate-grounded NMOS) devices, GDPMOS (Gate-to-Drain PMOS, gate-to-Drain PMOS devices) devices, have low robustness, and the area of the corresponding device needs to be increased to achieve a high level of electrostatic protection, thus reducing economic benefits. However, the conventional SCR device has high robustness, but the sustain voltage Vh is low, and the latch-up is easily induced to cause chip damage. Disclosure of Invention The application provides an ESD protection device with an SCR structure, which can solve the problem that the conventional SCR device is low in maintenance voltage Vh and is easy to induce latch-up effect to cause chip damage. The embodiment of the application provides an ESD protection device with an SCR structure, which comprises: A substrate; A first well region located in the substrate; A first shallow trench isolation structure in a ring shape, wherein the first shallow trench isolation structure is positioned in the substrate and is arranged around the first well region; a second well region in a ring shape, wherein the second well region is positioned in the substrate and is arranged around the first shallow trench isolation structure; a first heavily doped region of a first conductivity type in a stripe shape, the first heavily doped region being located in the first well region; A plurality of second heavily doped regions of the second conductivity type in the form of blocks; The second heavily doped regions and the third heavily doped regions are arranged in a staggered mode, and the second heavily doped regions and the third heavily doped regions which are arranged in a staggered mode are located in the first well regions at two sides of the first heavily doped regions; a fourth heavily doped region of the second conductivity type in the shape of a ring, the fourth heavily doped region being located in the second well region and near an edge of the second well region; a fifth heavily doped region of the first conductivity type in a block shape; A sixth heavily doped region of the second conductivity type in a block shape, wherein the fifth heavily doped region and the sixth heavily doped region are staggered, and the staggered fifth heavily doped region and sixth heavily doped region are positioned in the second well region between the fourth heavily doped region and the first shallow trench isolation structure; The first heavily doped region, the second heavily doped region and the third heavily doped region are all connected with low level, and the fourth heavily doped region, the fifth heavily doped region and the sixth heavily doped region are all connected with high level. Optionally, in the ESD protection device with the SCR structure, in the second heavily doped region and the third heavily doped region that are staggered, a certain distance is formed between every two adjacent second heavily doped regions and third heavily doped regions. Optionally, in the ESD protection device with the SCR structure, in the fifth heavily doped region and the sixth heavily doped region that are staggered, a certain distance is formed between every two adjacent fifth heavily doped regions and sixth heavily doped regions. Optionally, in the ESD protection device with the SCR structure, each third heavily doped region is connected to the first heavily doped region, and a certain distance is formed between each second heavily doped region and the first heavily doped region. Optionally, in the ESD protection device with the SCR structure, each sixth heavily doped region is connected to the fourth heavily doped region, and a certain distance is formed between each fifth heavily doped region and the fourth heavily doped region. Optionally, in the ESD protection device with the SCR structure, the ESD protection device further comprises a second annular shallow trench isolation structure, wherein the second shallow trench isolation structure is located in the substrate and is arranged around the second well region. Optionally, in the ESD protection device with the SCR