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CN-122002931-A - Image sensor package

CN122002931ACN 122002931 ACN122002931 ACN 122002931ACN-122002931-A

Abstract

An image sensor package may include an optically transmissive cover including a first layer coupled to a maximum planar surface of the optically transmissive cover, and a plurality of nanostructures in the first layer positioned adjacent a perimeter of the optically transmissive cover. The plurality of nanostructures may form a substantially solar-blind ultraviolet light filter.

Inventors

  • S. Bursack
  • Brian Gabriel Almond

Assignees

  • 半导体元件工业有限责任公司

Dates

Publication Date
20260508
Application Date
20250113
Priority Date
20241106

Claims (20)

  1. 1. An image sensor package, the image sensor package comprising: an optically transmissive cover, the optically transmissive cover comprising: a first layer coupled to the maximum planar surface of the optically transmissive cover, and A plurality of nanostructures in the first layer positioned adjacent to a perimeter of the optically transmissive cover; wherein the plurality of nanostructures form a substantially solar blind ultraviolet light filter.
  2. 2. The package of claim 1, wherein a pitch of the plurality of nanostructures and a size of each of the plurality of nanostructures are sized to substantially prevent visible light from passing through the plurality of nanostructures.
  3. 3. The package of claim 1, wherein a pitch of the plurality of nanostructures and a size of each of the plurality of nanostructures are sized to allow substantially only uv light to pass through the plurality of nanostructures.
  4. 4. The package of claim 1, wherein the plurality of nanostructures comprises a grid comprising aluminum, wherein the pores in the grid are filled with silicon dioxide.
  5. 5. The package of claim 4, wherein the aluminum mesh has a pitch of 180 nanometers.
  6. 6. The package of claim 4, wherein the aperture is square, each side having a length of 67.5 nanometers.
  7. 7. The package of claim 4, wherein the aluminum mesh is 150 nanometers thick.
  8. 8. The package of claim 1, wherein a width of the plurality of nanostructures adjacent the perimeter of the optically transmissive cover is between 200 micrometers and 500 micrometers.
  9. 9. The package of claim 1, wherein the package further comprises an image sensor semiconductor die coupled to the optically transmissive cover, wherein the largest planar surface faces the image sensor semiconductor die.
  10. 10. An image sensor package, the image sensor package comprising: an optically transmissive cover, the optically transmissive cover comprising: A recess extending around a perimeter of a maximum planar surface of the optically transmissive cover, and A plurality of the nano-structures of the nano-structure, the plurality of nanostructures are in the recess; wherein the plurality of nanostructures form a substantially solar blind ultraviolet light filter.
  11. 11. The package of claim 10, wherein a pitch of the plurality of nanostructures and a size of each of the plurality of nanostructures are sized to substantially prevent visible light from passing through the plurality of nanostructures.
  12. 12. The package of claim 10, wherein a pitch of the plurality of nanostructures and a size of each of the plurality of nanostructures are sized to allow substantially only uv light to pass through the plurality of nanostructures.
  13. 13. The package of claim 10, wherein the plurality of nanostructures in the recess have a width between 200 micrometers and 500 micrometers.
  14. 14. The package of claim 10, further comprising an image sensor semiconductor die coupled to the optically transmissive cover, wherein the largest planar surface faces the image sensor semiconductor die.
  15. 15. An image sensor package, the image sensor package comprising: an optically transmissive cover comprising a plurality of nanostructures in a material of the optically transmissive cover; wherein the plurality of nanostructures form a substantially solar blind ultraviolet light filter.
  16. 16. The package of claim 15, wherein a pitch of the plurality of nanostructures and a size of each of the plurality of nanostructures are sized to substantially prevent visible light from passing through the plurality of nanostructures.
  17. 17. The package of claim 15, wherein a pitch of the plurality of nanostructures and a size of each nanostructure of the plurality of nanostructures are sized to allow substantially only uv light to pass through the plurality of nanostructures.
  18. 18. The package of claim 15, wherein the plurality of nanostructures in the material of the optically transmissive cover are between 200 micrometers and 500 micrometers wide.
  19. 19. The package of claim 15, wherein the package further comprises an image sensor semiconductor die coupled to the optically transmissive cover, wherein the largest planar surface faces the image sensor semiconductor die.
  20. 20. The package of claim 15, wherein each nanostructure of the plurality of nanostructures extends into a thickness of the optically transmissive cover.

Description

Image sensor package Technical Field Aspects of the present document relate generally to image sensor packages. Background Semiconductor packages have been developed to protect the semiconductor die from shock or vibration. Various semiconductor packages are also used to help facilitate electrical connection between pads on a semiconductor die and various electrical traces included in a circuit board or motherboard to which the semiconductor package is attached. Some semiconductor packages are also configured to provide moisture protection for the semiconductor die. The image sensor package also protects the die surface from particles or other sources of contamination that can hinder imaging performance. Disclosure of Invention An image sensor package may include an optically transmissive cover including a first layer coupled to a maximum planar surface of the optically transmissive cover, and a plurality of nanostructures in the first layer positioned adjacent a perimeter of the optically transmissive cover. The plurality of nanostructures may form a substantially solar-blind ultraviolet light filter. Implementations of the image sensor package may include one, all, or any of the following: The spacing of the plurality of nanostructures and the size of each of the plurality of nanostructures may be sized to substantially prevent visible light from passing through the plurality of nanostructures. The spacing of the plurality of nanostructures and the size of each of the plurality of nanostructures may be sized to allow substantially only ultraviolet light to pass through the plurality of nanostructures. The plurality of nanostructures may comprise a mesh comprising aluminum, wherein the pores in the mesh are filled with silica. The pitch of the aluminum grid may be 180 nanometers. The aperture may be square with each side having a length of 67.5 nm. The aluminum mesh may be 150 nanometers thick. The width of the plurality of nanostructures adjacent the perimeter of the optically transmissive cover may be between 200 micrometers and 500 micrometers. The package may include an image sensor semiconductor die coupled to the optically transmissive cover with the largest planar surface facing the image sensor semiconductor die. Implementations of the image sensor package may include an optically transmissive cover including a recess extending around a perimeter of a largest planar surface of the optically transmissive cover, and a plurality of nanostructures in the recess. The plurality of nanostructures may form a substantially solar-blind ultraviolet light filter. The spacing of the plurality of nanostructures and the size of each of the plurality of nanostructures may be sized to substantially prevent visible light from passing through the plurality of nanostructures. The spacing of the plurality of nanostructures and the size of each of the plurality of nanostructures may be sized to allow substantially only ultraviolet light to pass through the plurality of nanostructures. The width of the plurality of nanostructures in the recess may be between 200 micrometers and 500 micrometers. The package may include an image sensor semiconductor die coupled to the optically transmissive cover with the largest planar surface facing the image sensor semiconductor die. Implementations of the image sensor package may include an optically transmissive cover including a plurality of nanostructures in a material of the optically transmissive cover. The plurality of nanostructures may form a substantially solar-blind ultraviolet light filter. The spacing of the plurality of nanostructures and the size of each of the plurality of nanostructures may be sized to substantially prevent visible light from passing through the plurality of nanostructures. The spacing of the plurality of nanostructures and the size of each of the plurality of nanostructures may be sized to allow substantially only ultraviolet light to pass through the plurality of nanostructures. The width of the plurality of nanostructures in the material of the optically transmissive cover may be between 200 micrometers and 500 micrometers. The package may include an image sensor semiconductor die coupled to the optically transmissive cover with the largest planar surface facing the image sensor semiconductor die. Each of the plurality of nanostructures may extend into the thickness of the optically transmissive cover. The above and other aspects, features and advantages will be readily apparent to those of ordinary skill in the art from the detailed description and drawings, and from the claims. Drawings The detailed description will hereinafter be described in conjunction with the appended drawings, wherein like designations denote like elements, and: FIG. 1 is a top view of an implementation of an image sensor package; FIG. 2 is a cross-sectional detail view of a particular implementation of the image sensor package of FIG. 1 taken along section line A-A; FIG. 3 i