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CN-122002942-A - Photoelectric detector based on two-dimensional material doped PbSe heterojunction and preparation method thereof

CN122002942ACN 122002942 ACN122002942 ACN 122002942ACN-122002942-A

Abstract

The invention discloses a photoelectric detector based on a two-dimensional material doped PbSe heterojunction and a preparation method thereof, belonging to the technical field of semiconductor photoelectric detection and comprising the following steps of S1, preparing a bottom electrode on a substrate; S2, forming a two-dimensional material channel layer on the bottom electrode, S3, depositing a MoCl 5 doped PbSe film on the two-dimensional material channel layer to form an absorption layer, wherein the doping proportion of MoCl 5 is controlled to be 0.5mol% to 2mol%, the proportion of Mo atoms to Cl atoms in the doped PbSe absorption layer is controlled to be 1:1 to 1:2, S4, depositing an intrinsic high-resistance PbSe film on the doped PbSe absorption layer to form a barrier layer, and S5, preparing a top electrode on the barrier layer. According to the invention, the high mobility two-dimensional material channel, the precisely doped PbSe absorption layer and the intrinsic PbSe blocking layer are integrated into a sandwich BIB structure, and the efficient separation and transportation of the photon-generated carriers and the effective inhibition of dark current are realized through the synergistic effect of the built-in electric field and the blocking layer of the heterojunction.

Inventors

  • PENG SILU
  • WEN LILI
  • CUI MENGYING
  • WANG ZHIMING
  • PAN LIANG
  • LI CHUNYU
  • YANG FAN
  • LIU XIAODIE
  • WANG LUN
  • HE WEI
  • ZHANG XIA

Assignees

  • 天府绛溪实验室

Dates

Publication Date
20260508
Application Date
20251203

Claims (10)

  1. 1. The preparation method of the photoelectric detector based on the two-dimensional material doped PbSe heterojunction is characterized by comprising the following steps of: S1, preparing a bottom electrode on a substrate; s2, forming a two-dimensional material channel layer on the bottom electrode; S3, depositing a PbSe film doped with MoCl 5 on the two-dimensional material channel layer to form an absorption layer, wherein the doping proportion of MoCl 5 is controlled to be 0.5mol% to 2mol%, and the proportion of Mo atoms to Cl atoms in the doped PbSe absorption layer is controlled to be 1:1 to 1:2; S4, depositing an intrinsic high-resistance PbSe film on the doped PbSe absorption layer to form a barrier layer; And S5, preparing a top electrode on the barrier layer.
  2. 2. The method for preparing the two-dimensional material doped PbSe heterojunction-based photoelectric detector of claim 1, wherein the preparation of the MoCl 5 doped PbSe film comprises the following steps: Preparing MoCl 5 doped PbSe powder by adopting a solid phase synthesis method; and depositing the MoCl5 doped PbSe powder into a film by adopting a vacuum thermal evaporation method.
  3. 3. The method for preparing the two-dimensional material doped PbSe heterojunction-based photoelectric detector according to claim 2, wherein the preparation of the MoCl 5 doped PbSe powder by adopting a solid-phase synthesis method comprises the following steps: weighing and mixing Pb powder, se powder and MoCl 5 doping sources with purity not lower than 99.9% according to the atomic proportion and the doping proportion; carrying out high-temperature solid phase reaction on the mixed powder under the protection of vacuum or inert gas to obtain a doped PbSe compound; Crushing, grinding and sieving the doped PbSe compound to obtain MoCl 5 doped PbSe powder.
  4. 4. The method for preparing the two-dimensional material doped PbSe heterojunction-based photoelectric detector of claim 2, wherein the vacuum thermal evaporation method is adopted to deposit the MoCl 5 doped PbSe powder into a film, and the method comprises the following steps: placing the doped PbSe powder into a vacuum chamber, and pumping the chamber to the pressure And (3) heating the mixed PbSe powder under Pa to sublimate the mixed PbSe powder and depositing the mixed PbSe powder on the surface of the substrate to form a film.
  5. 5. The method for manufacturing the two-dimensional material doped PbSe heterojunction based photodetector according to claim 1, wherein the two-dimensional material channel layer is directly grown on the bottom electrode by chemical vapor deposition or a pre-synthesized two-dimensional material slice is transferred onto the bottom electrode by mechanical stripping, and the two-dimensional material is one of MoS 2 、MoSe 2 、WS 2 or WSe 2 .
  6. 6. The method for preparing the two-dimensional material doped PbSe heterojunction-based photoelectric detector, as claimed in claim 1, wherein the intrinsic PbSe barrier layer is deposited by vacuum evaporation or magnetron sputtering, and the thickness of the intrinsic PbSe barrier layer is controlled within the range of 80nm to 150 nm.
  7. 7. The method for preparing the two-dimensional material doped PbSe heterojunction-based photoelectric detector of claim 1, wherein the bottom electrode and the top electrode are formed by depositing metal by an electron beam evaporation method, a thermal evaporation method or a magnetron sputtering method.
  8. 8. A two-dimensional material doped PbSe heterojunction-based photodetector, characterized in that the doped PbSe heterojunction-based photodetector is prepared by the method of any one of claims 1 to 7, comprising: The device comprises a substrate, a bottom electrode, a two-dimensional material channel layer, a doped PbSe absorbing layer, an intrinsic PbSe blocking layer and a top electrode, wherein the bottom electrode, the two-dimensional material channel layer, the doped PbSe absorbing layer, the intrinsic PbSe blocking layer and the top electrode are sequentially stacked on the substrate, the doped PbSe absorbing layer is a MoCl 5 doped PbSe film, the doping proportion of MoCl 5 is 0.5mol% to 2mol%, and the proportion of Mo atoms to Cl atoms in the doped PbSe absorbing layer is 1:1 to 1:2.
  9. 9. The two-dimensional material doped PbSe heterojunction-based photodetector of claim 8, wherein the material of the two-dimensional material channel layer comprises one of MoS 2 、MoSe 2 、WS 2 or WSe 2 .
  10. 10. The two-dimensional material doped PbSe heterojunction-based photodetector of claim 8, wherein the doped PbSe absorber layer has a thickness of 300nm to 700nm and the intrinsic PbSe barrier layer has a thickness of 80nm to 150nm.

Description

Photoelectric detector based on two-dimensional material doped PbSe heterojunction and preparation method thereof Technical Field The invention relates to the technical field of semiconductor photoelectric detection, in particular to a photoelectric detector based on a two-dimensional material doped PbSe heterojunction and a preparation method thereof. Background The infrared photoelectric detector has wide application in the fields of military reconnaissance, environmental monitoring, medical diagnosis, communication and the like. PbSe is used as a traditional IV-VI semiconductor material, and is always a hot spot for mid-infrared detection research due to the narrow forbidden bandwidth (0.27 eV) and high quantum efficiency. However, the traditional PbSe photoelectric detector has the inherent defects of high dark current, slow response speed, large noise and the like, and severely restricts the performance of the PbSe photoelectric detector in a high-sensitivity application scene. The BIB structure is an effective means of reducing detector dark current by introducing an intrinsic barrier to inhibit irregular injection of carriers from the contact electrode. At present, BIB structures are successfully applied to detectors of Si: as, si: sb and the like, but how to combine the BIB structures with a PbSe material system and realize accurate design of energy bands still remains a challenge. In addition, the two-dimensional material has excellent characteristics of extremely high carrier mobility, no dangling bonds on the surface and the like, and is an ideal high-speed carrier transmission channel. Therefore, a multi-layer heterojunction structure integrating the two-dimensional material, the doped PbSe absorption layer and the intrinsic barrier layer is constructed, all the advantages are integrated, and the performance breakthrough is realized. Disclosure of Invention The invention aims to provide a photoelectric detector based on a two-dimensional material doped PbSe heterojunction and a preparation method thereof, so as to solve the problems of high dark current, large noise and limited performance of the traditional PbSe detector. The invention discloses a preparation method of a photoelectric detector based on a two-dimensional material doped PbSe heterojunction, which comprises the following steps: S1, preparing a bottom electrode on a substrate; s2, forming a two-dimensional material channel layer on the bottom electrode; S3, depositing a PbSe film doped with MoCl 5 on the two-dimensional material channel layer to form an absorption layer, wherein the doping proportion of MoCl 5 is controlled to be 0.5mol% to 2mol%, and the proportion of Mo atoms to Cl atoms in the doped PbSe absorption layer is controlled to be 1:1 to 1:2; S4, depositing an intrinsic high-resistance PbSe film on the doped PbSe absorption layer to form a barrier layer; And S5, preparing a top electrode on the barrier layer. Further, the doping ratio of MoCl 5 was 1mol% and the atomic ratio of Mo to Cl was 1:1. Further, the preparation of the MoCl 5 doped PbSe thin film comprises: Preparing MoCl 5 doped PbSe powder by adopting a solid phase synthesis method; And depositing the PbSe powder doped with the MoCl 5 into a film by adopting a vacuum thermal evaporation method. Further, the preparation of MoCl 5 doped PbSe powder by solid phase synthesis comprises: weighing and mixing Pb powder, se powder and MoCl 5 doping sources with purity not lower than 99.9% according to the atomic proportion and the doping proportion; carrying out high-temperature solid phase reaction on the mixed powder under the protection of vacuum or inert gas to obtain a doped PbSe compound; Crushing, grinding and sieving the doped PbSe compound to obtain MoCl 5 doped PbSe powder. Further, the vacuum thermal evaporation method is adopted to deposit the PbSe powder doped with the MoCl 5 into a film, and the method comprises the following steps: And placing the doped PbSe powder into a vacuum chamber, pumping the pressure of the chamber to below 1X 10 -3 Pa, heating to sublimate the doped PbSe powder, and depositing the doped PbSe powder on the surface of the substrate to form a film. Further, the two-dimensional material channel layer is directly grown on the bottom electrode by a chemical vapor deposition method or a pre-synthesized two-dimensional material sheet is transferred to the bottom electrode by a mechanical stripping method, wherein the two-dimensional material is one of MoS 2、MoSe2、WS2 or WSe 2. Further, the intrinsic PbSe barrier layer is deposited by adopting a vacuum evaporation or magnetron sputtering method, and the thickness of the intrinsic PbSe barrier layer is controlled to be in a range of 80nm to 150 nm. Further, the bottom electrode and the top electrode are formed by depositing metal by electron beam evaporation, thermal evaporation or magnetron sputtering. In another aspect, the present invention provides a two-dimensional material doped Pb