CN-122002946-A - Two-dimensional homojunction structure and preparation method and application thereof

Abstract

The invention belongs to the technical field related to photoelectric devices, and discloses a two-dimensional homojunction structure, a preparation method and application thereof, wherein the method comprises the following steps of S1, depositing silicon nitride on a substrate to obtain a silicon nitride substrate; S2, preparing a two-dimensional material homojunction on the silicon nitride substrate by using a chemical vapor deposition reaction method so as to obtain a two-dimensional homojunction structure. According to the invention, silicon nitride is deposited on the substrate, and a two-dimensional material homojunction is grown on the silicon nitride substrate by a chemical vapor deposition method, so that the material structure of the two-dimensional material homojunction/silicon nitride is prepared by a one-step chemical reaction method, the material preparation operation flow and period are obviously simplified, and the problems that the existing mechanical stripping method is inextensible and the chemical doping method is difficult to control accurately are solved.

Inventors

• LI YUAN
• WANG JIAZHENG
• HE HONGBO
• LIN XIANG
• ZHAI TIANYOU

Assignees

• 华中科技大学

Dates

Publication Date

20260508

Application Date

20260115

Claims (10)

1. 1. The preparation method of the two-dimensional homojunction structure is characterized by comprising the following steps of: S1, depositing silicon nitride on a substrate to obtain a silicon nitride substrate; S2, preparing a two-dimensional material homojunction on the silicon nitride substrate by using a chemical vapor deposition reaction method so as to obtain a two-dimensional homojunction structure.
2. 2. The method of claim 1, wherein the two-dimensional homojunction structure is obtained by spin-coating photoresist uniformly on a silicon nitride substrate, exposing and developing an array pattern by a photolithography machine after baking the photoresist, placing a reaction source in a tube furnace at the upstream of the reaction by a chemical vapor deposition reaction method, placing the developed substrate at the downstream of the reaction, heating to a reaction temperature, and growing two-dimensional homojunction on the silicon nitride substrate.
3. 3. The method of claim 2, wherein the temperature upstream of the reaction is 150 ℃ to 350 ℃.
4. 4. The method of claim 3, wherein the temperature downstream of the reaction is 650-800 ℃.
5. 5. A two-dimensional homojunction structure prepared by the preparation method of the two-dimensional homojunction structure according to any one of claims 1 to 4 is characterized by comprising a substrate, a silicon nitride layer and a two-dimensional material homojunction layer which are arranged from bottom to top.
6. 6. A two-dimensional material homojunction photoelectric synaptic device is characterized in that the photoelectric synaptic device comprises the two-dimensional homojunction structure of claim 5 and a metal electrode arranged on the two-dimensional material homojunction layer.
7. 7. The two-dimensional material homojunction electro-optical synaptic device of claim 6, wherein the electro-optical synaptic device exhibits an increasing current when irradiated with visible light and, conversely, the electro-optical synaptic device exhibits a decreasing current when irradiated with ultraviolet light.
8. 8. The two-dimensional material homojunction electro-optical synaptic device of claim 6, wherein the electro-optical synaptic device is configured to convert a multi-value time-series optical signal into a characteristic current based on different values of the illumination power to extract a temporal characteristic of the optical signal.
9. 9. The two-dimensional material homojunction electro-optical synaptic device of claim 6, wherein the electro-optical synaptic device exhibits different optical synaptic properties under light irradiation and different optical response properties under different wavelengths of light.
10. 10. Use of a two-dimensional material homojunction electro-synaptic device as claimed in any one of claims 6-9 for the sensing and pre-processing of visible and ultraviolet light signals.

Description

Two-dimensional homojunction structure and preparation method and application thereof Technical Field The invention belongs to the technical field related to photoelectric devices, and particularly relates to a two-dimensional homojunction structure, and a preparation method and application thereof. Background Neuromorphic calculations show broad development prospects by virtue of high parallel processing capability and low data handling loss, and artificial synapse devices are attracting attention as core hardware modules. Among them, the electro-optical synaptic device is a novel electronic/electro-optical device that simulates the function of biological synapses. It uses optical and/or electrical signals as stimuli to achieve a plasticity similar to that of biological synapses, i.e. the connection strength (synaptic weight) can be changed continuously according to the history of the input signal. Optoelectronic synaptic devices are one of the very potential technological routes in the post-molar and artificial intelligence era. The method directly simulates the learning and memory functions of living beings in the hardware level through the exquisite interaction of light and substances, and aims to solve the fundamental bottleneck of the current computing technology in processing visual information. The photoelectric synapse can integrate visual sensing and signal processing functions, realizes efficient conversion of optical-electrical signals, and has the advantages of high bandwidth, low crosstalk, low power consumption, no resistance to capacitance delay and the like. However, the current mainstream photoelectric synaptic devices generally have the problems of insufficient reliability and difficult compatibility with the CMOS process, which severely restricts the large-scale preparation and on-chip integration application. Disclosure of Invention Aiming at the defects or improvement demands of the prior art, the invention provides a two-dimensional homojunction structure, a preparation method and application thereof, and aims to solve the problem that the preparation of the existing photoelectric synaptic device is difficult. In order to achieve the above object, according to one aspect of the present invention, there is provided a method for preparing a two-dimensional homojunction structure, comprising the steps of: S1, depositing silicon nitride on a substrate to obtain a silicon nitride substrate; S2, preparing a two-dimensional material homojunction on the silicon nitride substrate by using a chemical vapor deposition reaction method so as to obtain a two-dimensional homojunction structure. Further, firstly, uniformly spin-coating photoresist on a silicon nitride substrate, exposing and developing an array pattern through a photoetching machine after baking the photoresist, then, placing a reaction source at the upstream of the reaction in a tube furnace by utilizing a chemical vapor deposition reaction method, placing the developed substrate at the downstream of the reaction, heating to the reaction temperature, and growing a two-dimensional material homojunction on the silicon nitride substrate to obtain a two-dimensional homojunction structure. Further, the temperature upstream of the reaction is 150-350 ℃. Further, the temperature of the downstream reaction is 650-800 ℃. The invention also provides a two-dimensional homojunction structure prepared by the preparation method of the two-dimensional homojunction structure, which comprises a substrate, a silicon nitride layer and a two-dimensional material homojunction layer which are arranged from bottom to top. The invention also provides a two-dimensional material homojunction photoelectric synaptic device, which comprises the two-dimensional homojunction structure and a metal electrode arranged on the two-dimensional material homojunction layer. Further, the electro-optical synaptic device exhibits a current increasing behavior under irradiation of visible light, and conversely, the electro-optical synaptic device exhibits a current decreasing behavior under irradiation of ultraviolet light. Further, the electro-optical synaptic device is configured to convert the multi-value time-series optical signal into a characteristic current according to different values of the light irradiation power, so as to extract the time characteristic of the optical signal. Further, the electro-optical synaptic devices exhibit different optical synaptic characteristics under light irradiation, and the electro-optical synaptic devices exhibit different optical response characteristics under different wavelengths of light. The invention also provides application of the two-dimensional material homojunction photoelectric synaptic device in sensing and preprocessing of visible light and ultraviolet light signals. In general, compared with the prior art, the two-dimensional homojunction structure and the preparation method and application thereof have the following