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CN-122002948-A - Preparation method of p-Si/n-ZnO interface modification for enhancing photoelectric performance

CN122002948ACN 122002948 ACN122002948 ACN 122002948ACN-122002948-A

Abstract

The invention relates to a preparation method of p-Si/n-ZnO interface modification for enhancing photoelectric performance, which belongs to the technical field of heterojunction photoelectric technology and comprises the following steps of 1) cleaning Si, respectively cleaning with acetone, absolute ethyl alcohol and deionized water for 20 minutes, 2) adopting a magnetron sputtering technology to put p-Si into a magnetron sputtering chamber to prepare intrinsic ZnO on the p-Si, 3) carrying out oxidation annealing on the prepared Si-based ZnO, 4) adopting the magnetron sputtering technology to prepare n-ZnO on the basis of the step 3), 5) carrying out reduction annealing on the prepared p-Si/n-ZnO heterojunction, and 6) obtaining the p-Si/n-ZnO heterojunction material for enhancing photoelectric performance after interface modification. The p-Si/n-ZnO interface modified heterojunction prepared by the preparation method for enhancing the photoelectric performance is used for testing the photoelectric conversion efficiency, can improve the photoelectric performance and has the advantages of simple preparation and low cost.

Inventors

  • LIU ZHIXIANG
  • LIU JIN
  • ZENG YUFENG
  • CHEN SHUMIN
  • HUANG JIAN
  • XU CHUANWEN
  • FANG ZHIJIE
  • CHENG HAO

Assignees

  • 荆楚理工学院
  • 湖北永创鑫电子有限公司

Dates

Publication Date
20260508
Application Date
20260120

Claims (10)

  1. 1. The preparation method of the p-Si/n-ZnO interface modification for enhancing the photoelectric performance is characterized by comprising the following steps of: 1) Cleaning Si, namely respectively using acetone, absolute ethyl alcohol and deionized water to clean for 20 minutes; 2) Placing p-Si into a magnetron sputtering chamber by adopting a magnetron sputtering technology, and preparing intrinsic ZnO on the p-Si; 3) Carrying out oxidation annealing on the prepared Si-based ZnO; 4) On the basis of the step 3), preparing n-ZnO by adopting a magnetron sputtering technology; 5) Carrying out reduction annealing on the prepared p-Si/n-ZnO heterojunction; 6) And obtaining the p-Si/n-ZnO heterojunction material with enhanced photoelectric property after interface modification.
  2. 2. The method for preparing p-Si/n-ZnO interface modification for enhancing photoelectric properties according to claim 1, wherein in said step 1), p-Si (100) is put into an ultrasonic cleaning apparatus, acetone, absolute ethyl alcohol and deionized water are completely covered with Si, and each is cleaned for 20 minutes.
  3. 3. The method for preparing p-Si/n-ZnO interface modification for enhancing photoelectric performance according to claim 1, wherein in the step 2), the intrinsic ZnO is prepared by placing p-Si into a magnetron sputtering chamber by adopting a magnetron sputtering technology, and the vacuum degree reaches 1.2X10 -5 Torr.
  4. 4. The method for preparing p-Si/n-ZnO interface modification for enhancing photoelectric performance according to claim 1, wherein in the step 3), the prepared Si-based ZnO is subjected to oxidation annealing at a temperature of 400-500 ℃.
  5. 5. The method for preparing p-Si/n-ZnO interface modification for enhancing photoelectric performance according to claim 1, wherein in the step 4), the magnetron sputtering technology is adopted to prepare n-ZnO, wherein the n-ZnO is Al doped ZnO, and the thickness of the n-ZnO film is 90-120nm.
  6. 6. The method for preparing the p-Si/n-ZnO interface modification for enhancing the photoelectric performance according to claim 1, wherein in the step 5), the prepared p-Si/n-ZnO heterojunction is subjected to reduction annealing at the annealing temperature of 450-550 ℃ and is cooled to room temperature along with a furnace.
  7. 7. The method of claim 3, wherein the intrinsic ZnO has a surface morphology which is an island-like structure at the beginning of film formation and has a ZnO (002) diffraction peak.
  8. 8. The method for preparing p-Si/n-ZnO interface modification for enhancing photoelectric properties according to claim 1, wherein in said step 6), intrinsic ZnO having an island-like structure is selected as an intermediate layer of p-Si/n-ZnO, and then subjected to oxidation annealing.
  9. 9. The method for preparing p-Si/n-ZnO interface modification for enhancing photoelectric properties according to claim 8, wherein the annealing environment is an inert gas atmosphere or a vacuum environment in the oxidation annealing and reduction annealing processes.
  10. 10. The method for preparing p-Si/n-ZnO interface modification for enhancing photoelectric performance according to claim 8, wherein island-shaped ZnO oxide can serve as an i-ZnO layer, and built-in voltage formed by p-i-n junction with a certain effect is longer, so that more photo-generated carriers can be facilitated.

Description

Preparation method of p-Si/n-ZnO interface modification for enhancing photoelectric performance Technical Field The invention relates to the technical field of heterojunction photoelectricity, in particular to a preparation method of p-Si/n-ZnO interface modification for enhancing photoelectricity. Background The p-Si/n-ZnO heterojunction has the advantages of simple structure, green, abundant raw materials, low cost, stable physical and chemical properties, wide spectrum and the like, and is widely applied to micro/nano/optoelectronic devices and systems such as solar cells, photodiodes, detectors, acoustic wave devices and the like. The device performance is mainly affected by the Si/ZnO heterojunction interface: First, si/ZnO interface interactions can severely degrade device performance; second, si has a large thermal and lattice mismatch with ZnO; third, the Si/ZnO interface is a abrupt interface, and these factors can generate a large number of interface states, causing a series of negative phenomena such as carrier recombination, leakage current increase, fermi level pinning, and the like, thereby seriously affecting the device performance. Therefore, the invention provides a preparation method for Si/ZnO interface modification for enhancing photoelectric performance, which combines simulation to verify the rationality of the preparation method, has simple preparation and low cost, and improves the photoelectric performance of the device. Disclosure of Invention Aiming at the defects of the prior art, the invention provides a preparation method for modifying the p-Si/n-ZnO interface for enhancing the photoelectric performance, which has the advantages of simple preparation, low cost, improvement of the photoelectric performance of the device and the like, and solves the problem of reduced performance of the device. In order to achieve the aim, the invention provides the following technical scheme that the preparation method for the p-Si/n-ZnO interface modification for enhancing the photoelectric performance comprises the following steps: 1) Cleaning Si, namely respectively using acetone, absolute ethyl alcohol and deionized water to clean for 20 minutes; 2) Placing p-Si into a magnetron sputtering chamber by adopting a magnetron sputtering technology, and preparing intrinsic ZnO on the p-Si; 3) Carrying out oxidation annealing on the prepared Si-based ZnO; 4) On the basis of the step 3), preparing n-ZnO by adopting a magnetron sputtering technology; 5) Carrying out reduction annealing on the prepared p-Si/n-ZnO heterojunction; 6) And obtaining the p-Si/n-ZnO heterojunction material with enhanced photoelectric property after interface modification. Further, in the step 1), p-Si (100) was put into an ultrasonic cleaning apparatus, and acetone, absolute ethanol and deionized water were completely covered with Si, and each was cleaned for 20 minutes. Further, in the step 2), the p-Si is placed into a magnetron sputtering chamber by adopting a magnetron sputtering technology, and the vacuum degree reaches 1.2 multiplied by 10 -5 Torr, so that the intrinsic ZnO is prepared. Further, in the step 3), the prepared Si-based ZnO is subjected to oxidation annealing at a temperature of 400-500 ℃. Further, in the step 4), the magnetron sputtering technology is adopted to prepare n-ZnO, wherein n-ZnO is Al doped ZnO, and the thickness of the n-ZnO film is 90-120nm. Further, in the step 5), the prepared p-Si/n-ZnO heterojunction is subjected to reduction annealing at the annealing temperature of 450-550 ℃ and is cooled to room temperature along with a furnace. Further, in the step 3), the surface morphology of intrinsic ZnO is an island-like structure at the initial stage of film formation, and has ZnO (002) diffraction peaks. Further, in the step 6), intrinsic ZnO of island-like structure is selected as an intermediate layer of p-Si/n-ZnO, and then oxidation annealing is performed thereto. Further, in the oxidation annealing and the reduction annealing, the annealing environment is an inert gas atmosphere or a vacuum environment. Further, the island-shaped ZnO oxide can serve as an i-ZnO layer, and the built-in voltage formed by the p-i-n junction with a certain effect is longer, so that more photo-generated carriers are facilitated. Compared with the prior art, the technical scheme of the application has the following beneficial effects: According to the preparation method for the p-Si/n-ZnO interface modification for enhancing the photoelectric performance, p-Si (100) is placed into ultrasonic cleaning equipment, acetone, absolute ethyl alcohol and deionized water are required to be completely covered with Si, each cleaning is carried out for 20 minutes, a magnetron sputtering technology is adopted, p-Si is placed into a magnetron sputtering cavity, the vacuum degree reaches 1.2X10-5 Torr, intrinsic ZnO is prepared, the surface morphology of the intrinsic ZnO is an initial island-shaped structure formed by a fil