CN-122002949-A - Preparation method of low-interface-roughness nickel electrode for crystalline silicon heterojunction solar cell

Abstract

The invention belongs to the technical field of electronic materials, and particularly relates to a preparation method of a low-interface-roughness nickel electrode for a crystalline silicon heterojunction solar cell. The preparation method comprises the steps of cleaning a crystalline silicon heterojunction solar cell, flame treatment, molecular grafting, catalytic self-assembly and amino acid reinforced nickel plating, wherein the interface roughness of a nickel layer and the crystalline silicon heterojunction solar cell is low, the binding force is high, and the crystalline silicon heterojunction solar cell can pass an ASTM D3359 standard test, so that the grade of 5B is achieved, namely 100% of a coating layer does not fall off after scratches. The nickel layer can be used as a priming layer for preparing a non-silver electrode of the crystalline silicon heterojunction solar cell, so that the electrode cost is reduced, and silver resources are saved.

Inventors

• XUE LONGLONG
• ZHOU TINGTING
• LV YINXIANG

Assignees

• 复旦大学义乌研究院

Dates

Publication Date

20260508

Application Date

20260131

Claims (1)

1. 1. The preparation method of the low interface roughness nickel electrode for the crystalline silicon heterojunction solar cell is characterized by comprising the following steps of: (1) Washing the surface, namely washing the crystalline silicon heterojunction solar cell by deionized water, ethanol and acetone in sequence, and then placing the crystalline silicon heterojunction solar cell in a vacuum oven to be dried at 50-60 ℃ to obtain a clean crystalline silicon heterojunction solar cell; (2) Flame treatment, namely injecting organic fuel into the alcohol lamp, igniting, and placing the indium tin oxide surface of the clean crystalline silicon heterojunction solar cell in the step (1) above flame outer flame for 1-2 cm and maintaining for 3-5 seconds to obtain a flame treated solar cell, wherein the organic fuel is any one of ethylene glycol, glycerol, styrene and n-decane; (3) Putting the flame-treated solar cell in the step (2) into a molecular grafting solution, standing for 3-5 hours at 60-70 ℃, taking out, sequentially eluting with deionized water, ethanol and acetone, and then putting into a vacuum oven for drying at 50-60 ℃ to obtain a grafted solar cell, wherein the molecular grafting solution comprises the components of deionized water, ethanol and a silane coupling agent in a weight ratio of deionized water to silane coupling agent=10 (5-8) (3-4), wherein the silane coupling agent is any one of gamma-glycidol ether oxypropyl trimethoxysilane, beta- (3, 4-epoxycyclohexyl) ethyl trimethoxysilane and 2- (3, 4-epoxycyclohexyl) ethyl triethoxysilane, and 1, 3-bis (3-glycidol ether oxypropyl) tetramethyl disiloxane; (4) Adding 0.1-0.2 g of chloroauric acid and 10-12 g of trisodium citrate into 800-1000 mL of deionized water, stirring, dropwise adding 2-4 mL of sodium borohydride aqueous solution with the weight percentage concentration of 1% -2%, continuously stirring for 2-3 hours, standing for 1-2 hours to obtain gold nanoparticle sol solution, placing the grafted solar cell in the step (3) in the gold nanoparticle sol solution, standing for 3-6 hours at room temperature, taking out, eluting with deionized water, 10% potassium ferricyanide aqueous solution and deionized water in sequence, and drying with nitrogen to obtain the self-assembled solar cell; (5) The chemical nickel plating method comprises the steps of adding nickel sulfate hexahydrate, sodium acetate, sodium hypophosphite, glucose and amino acid into deionized water, adjusting the pH value to 12-13 by using a 2M NaOH aqueous solution to obtain a chemical nickel plating solution, placing the self-assembled solar cell in the step (4) into the chemical nickel plating solution, heating to 60-70 ℃, standing for 3-5 minutes, taking out, leaching by using deionized water, drying by blowing nitrogen, and using the low interface roughness nickel electrode of the crystalline silicon heterojunction solar cell, wherein the weight ratio of nickel sulfate hexahydrate, sodium acetate, sodium hypophosphite, glucose, amino acid and deionized water is 10 (6-8): 5-10): 2-4): 1-3: 800-1000, and the amino acid is any one of serine ‌, ‌ glutamic acid ‌, ‌ ‌ histidine, ‌ arginine ‌ and ‌ lysine.

Description

Preparation method of low-interface-roughness nickel electrode for crystalline silicon heterojunction solar cell Technical Field The invention belongs to the field of electronic materials, and particularly relates to a preparation method of a low-interface-roughness nickel electrode for a crystalline silicon heterojunction solar cell. Background Crystalline silicon heterojunction solar cells (HJT or SHJ cells) are photovoltaic devices that use N-type single crystal silicon as a substrate and deposit silicon-based films and transparent conductive films of different characteristics on the front and rear surfaces of the cell. The core structure is based on heterojunction, namely PN junction is composed of two different semiconductor materials, and has essential difference with the traditional homojunction battery (PN junction is formed on the same material) (Ma Ming. Preparation and performance regulation of SnO2 transparent conductive film for crystalline silicon heterojunction solar cell. Shandong university's Shuoshi treatises, 2025.). The typical structure of the cell includes a key layer, ‌ N-type monocrystalline silicon substrate ‌, which serves as the base material of the cell, providing an electron transport channel. ‌ intrinsic amorphous silicon film ‌, respectively depositing a layer of extremely thin intrinsic amorphous silicon on the front surface and the back surface of the N-type silicon wafer, playing a role in passivating the surface defects of the crystalline silicon, reducing carrier recombination, and improving open circuit voltage and conversion efficiency. ‌ doping amorphous silicon film ‌, namely depositing a p-type amorphous silicon film on the front side and an n-type amorphous silicon film on the back side outside the intrinsic amorphous silicon layer to form a p-n junction structure. ‌ transparent conductive oxide film (TCO) ‌ a transparent conductive oxide film (such as indium tin oxide ITO) is coated on the doped amorphous silicon layers on both sides of the cell by Physical Vapor Deposition (PVD) or the like, to collect current and reduce series resistance, while having an anti-reflection effect. ‌ Metal electrode ‌ A grid line shaped metal electrode is made on the TCO film for leading out current. ‌ Because the electrode needs to be prepared on the TCO film (mainly ITO) of the crystalline silicon heterojunction solar cell, the common method is that the surface of the TCO is roughened, the bonding force between the metal electrode and the TCO is enhanced, but the surface roughening of the TCO can damage the structure of the solar cell, so that the photoelectric conversion efficiency is deteriorated, and the bonding force between the metal electrode and the TCO is ensured under the condition of no roughening, which is a common problem in the industry. Aiming at the problems, the invention provides a preparation method of a low-interface roughness nickel electrode for a crystalline silicon heterojunction solar cell. The method comprises the steps of crystal silicon heterojunction solar cell cleaning, flame treatment, molecular grafting, catalysis self-assembly and amino acid enhancement nickel plating, wherein the surface treatment of TCO (ITO) is in a nano level, the influence on the solar cell structure is very small, chemical bond linkage is arranged between the TCO and a metal electrode, the bonding strength is high, and the method is hopeful to solve the problem of industry commonality and has innovation through process integration. Disclosure of Invention The invention aims to provide a preparation method of a low-interface-roughness nickel electrode for a crystalline silicon heterojunction solar cell, which solves the problem of cell structure damage caused by a roughening process of the surface of a TCO (indium tin oxide) layer of the cell in the traditional process. The preparation method of the low interface roughness nickel electrode for the crystalline silicon heterojunction solar cell provided by the invention comprises the following steps: (1) Washing the surface, namely washing the crystalline silicon heterojunction solar cell by deionized water, ethanol and acetone in sequence, and then placing the crystalline silicon heterojunction solar cell in a vacuum oven to be dried at 50-60 ℃ to obtain a clean crystalline silicon heterojunction solar cell; (2) Flame treatment, namely injecting organic fuel into the alcohol lamp, igniting, and placing an Indium Tin Oxide (ITO) surface of the clean crystalline silicon heterojunction solar cell in the step (1) above flame outer flame for 1-2 cm and maintaining for 3-5 seconds to obtain a flame treated solar cell, wherein the organic fuel is any one of ethylene glycol, glycerol, styrene and n-decane; (3) Putting the flame-treated solar cell in the step (2) into a molecular grafting solution, standing for 3-5 hours at 60-70 ℃, taking out, sequentially eluting with deionized water, ethanol and acetone, and then putting into a vacuum