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CN-122002959-A - Crystal silicon Topcon multi-slice high-efficiency photovoltaic cell and preparation method thereof

CN122002959ACN 122002959 ACN122002959 ACN 122002959ACN-122002959-A

Abstract

The invention belongs to the technical field of preparation of crystalline silicon Topcon multi-piece high-efficiency photovoltaic cells, and particularly relates to a crystalline silicon Topcon multi-piece high-efficiency photovoltaic cell and a preparation method thereof, wherein the cell is a 4, 5 or 6 equal-piece cell obtained by carrying out laser cutting and edge passivation on a whole Topcon cell with a specific multi-piece graph layout. The production method mainly comprises the steps of cutting the whole battery into a plurality of small pieces by laser after printing the multi-piece pattern, and carrying out atomic layer deposition aluminum oxide passivation treatment on the exposed edges generated by cutting. According to the invention, the series resistance loss of the component is reduced through the multi-slice design, and the cutting damage is effectively repaired and the carrier recombination is restrained by combining with the innovative battery end edge passivation technology, so that the output power of the component is obviously improved on the premise of unchanged component size.

Inventors

  • YANG HAO
  • LU JING

Assignees

  • 弘元新材料(徐州)有限公司
  • 弘元绿色能源股份有限公司

Dates

Publication Date
20260508
Application Date
20251231

Claims (6)

  1. 1. A crystalline silicon Topcon multi-slice high-efficiency photovoltaic cell is characterized in that the photovoltaic cell is an N-equal-slice cell obtained by carrying out laser cutting and edge passivation treatment on a whole crystalline silicon Topcon cell with a multi-slice graph, wherein N is 4, 5 or 6; The multi-piece pattern refers to electrode pattern layout printed on the whole battery and is matched with cutting lines for equally dividing the whole battery into N small pieces; The edge passivation process is to deposit an aluminum oxide passivation layer on the cut edge surface of the die cell.
  2. 2. The crystalline silicon Topcon multi-piece high efficiency photovoltaic cell of claim 1, wherein when N=4, a quarter piece of cell is formed; 210R series, the number of main grids is 10BB-16BB, the whole battery is 210-218mm long, 182-186mm wide, and one quarter of the battery is 182-186mm long, 52.5-54.5mm wide; 210N series, the number of main grids is 12BB-18BB, the whole battery is 210-218mm long and 210-218mm wide, and one quarter of the battery is 210-218mm long and 52.5-54.5mm wide.
  3. 3. The crystalline silicon Topcon multi-piece high efficiency photovoltaic cell of claim 1, wherein when N=5, one fifth of the cells are formed; 210R series, wherein the number of main grids is 10BB-16BB, the size of the whole battery is 210-218mm, the width is 182-186mm, and one-fifth battery is 182-186mm, and the width is 42-43.6mm; 210N series, the number of main grids is 12BB-18BB, the whole battery is 210-218mm long and 210-218mm wide, and one fifth of the battery is 210-218mm long and 42-43.6mm wide.
  4. 4. The crystalline silicon Topcon multi-piece high efficiency photovoltaic cell of claim 1, wherein when N=6, one sixth of the pieces of cells are formed; 210R series, the number of main grids is 10BB-16BB, the whole battery is 210-218mm long, 182-186mm wide, and one sixth of the battery is 182-186mm long, 35-36.3mm wide; 210N series, the number of main grids is 12BB-18BB, the whole battery is 210-218mm long and 210-218mm wide, and one sixth of the battery is 210-218mm long and 35-36.3mm wide.
  5. 5. The method for preparing the crystalline silicon Topcon multi-piece efficient photovoltaic cell according to any one of claims 1 to 4, which is characterized by comprising the following steps: Step 1, cutting and scribing the printed and sintered finished battery piece to form a quarter battery piece, a fifth battery piece or a sixth battery piece; Step 2, stacking the cut battery piece trestle type in a metal boat, exposing the tangential plane position at the outer edge of the metal boat, and heating the inside of a placing cavity of the metal boat to 270 ℃ to ensure that the temperature of each temperature area in the cavity is stable and consistent; Step 3, vacuumizing and detecting leakage after the temperature is stable, so as to ensure that the cavity is in a vacuum sealing state; step 4, after the leak detection is qualified, introducing H 2 O with the flow rate of 2200+/-800 sccm for 7+/-4S, wherein the pressure of a furnace tube is 1800+/-800 mbar; Step 5, after the H 2 O gas is evacuated, introducing N 2 with the flow rate of 2500+/-1000 sccm for purging treatment, and removing the redundant H 2 O gas from the cavity for 12+/-6S; Step 6, repeating the steps 4 and 5, and repeating the steps for 3-10 times in total, namely intermittently introducing H 2 O for 5-10 times, and performing pretreatment to form a passivation layer mainly containing H ions on the surface of the position where the multi-piece battery piece is cut; Step 7, evacuating the gas in the cavity, then introducing trimethyl aluminum TMA with the flow rate of 2400+/-800 sccm for 5-15S, introducing N 2 with the flow rate of 2500+/-1000 sccm for purging after the furnace tube pressure is 1800+/-800 mbar, and discharging the redundant TMA gas out of the cavity for 3-10S; step 8, after the gas in the cavity is evacuated, introducing 2200+/-800 sccm of H 2 O for 5-15S, introducing N 2 with the flow rate of 2500+/-1000 sccm for purging after the furnace tube pressure is 1800+/-800 mbar, and removing redundant H 2 O gas from the cavity for 3-10S; Step 9, repeating the steps 7 and 8 for 100-500 times, wherein each cycle can deposit a layer of AI 2 O 3 with the thickness of 0.13nm on the surface of the position cut by the half-cell piece, and deposit an AI 2 O 3 passivation layer with the thickness of 13-65nm in total; Step 10, pumping out redundant gas in the cavity, and then introducing 5000-20000sccm of N2 for back pressure treatment; And 11, cooling after returning to normal pressure, and taking out the battery piece.
  6. 6. The method for preparing the crystalline silicon Topcon multi-piece efficient photovoltaic cell, which is disclosed in claim 5, is characterized in that: An AlOX layer was deposited using an atomic layer deposition ALD and photo-immersion process in which alumina was grown layer by layer, the deposition consisting of two self-limiting half reactions: Al(CH 3 ) 3 +Si-O-H(s)→Si-O-Al(CH 3 ) 2 +CH 4 2H 2 O+Si-O-Al(CH 3 ) 2 →Si-O-Al(OH) 2 +2CH 4 An ultra-thin, high quality, highly conformal passivation film of aluminum oxide (Al 2 O 3 ) is selectively deposited on the exposed, unpassivated edge sidewalls of TOPCon cells after edge notching/etching/dicing using atomic layer deposition ALD techniques.

Description

Crystal silicon Topcon multi-slice high-efficiency photovoltaic cell and preparation method thereof Technical Field The invention belongs to the technical field of preparation of crystalline silicon Topcon multi-piece efficient photovoltaic cells, and particularly relates to a crystalline silicon Topcon multi-piece efficient photovoltaic cell and a preparation method thereof. Background The 210R crystalline silicon Topcon photovoltaic cell is a high-efficiency photovoltaic product combining a large-size silicon chip and an advanced cell technology. The method adopts a 210mm multiplied by 182mm rectangular silicon wafer (210R) as a substrate and an N-type TOPCon battery process is applied, namely a tunneling oxide passivation contact battery process, the main power of a 66-model type current 210R crystal silicon Topcon photovoltaic battery at a component end is generally about 620w, the current high power demand of the market and the competition of high power of a BC product are faced, the BC product refers to a photovoltaic battery and a component adopting a back contact technology, the current conventional biplate battery has low power which can not meet the market demand gradually, as shown in fig. 1 and 2, fig. 1 is a 210R series of existing biplate schematic graphs, wherein fig. 1a is a biplate front graph, fig. 1b is a biplate back graph, and fig. 2 is a 210N series of existing biplate schematic graphs, wherein fig. 2a is a biplate front graph and fig. 2b is a biplate back graph. Therefore, the invention provides the crystalline silicon Topcon multi-slice high-efficiency photovoltaic cell, which can improve the power of the assembly on the basis of unchanged size of the original assembly and meet the market demand of the high-power assembly. Disclosure of Invention The invention aims to provide a crystalline silicon Topcon multi-slice high-efficiency photovoltaic cell and a preparation method thereof, which can solve the problem of low power of a crystalline silicon Topcon photovoltaic cell assembly and improve the power of the assembly. The technical scheme adopted by the invention is as follows: The crystal silicon Topcon multi-slice high-efficiency photovoltaic cell is an N-equal-slice cell obtained by carrying out laser cutting and edge passivation treatment on a whole crystal silicon Topcon cell with a multi-slice graph, wherein N is 4, 5 or 6; The multi-piece pattern refers to electrode pattern layout printed on the whole battery and is matched with cutting lines for equally dividing the whole battery into N small pieces; The edge passivation process is to deposit an aluminum oxide passivation layer on the cut edge surface of the die cell. When n=4, a quarter-piece battery sheet is formed; 210R series, the number of main grids is 10BB-16BB, the whole battery is 210-218mm long and 182-186mm wide, and one quarter of the battery is 182-186mm long and 52.5-54.5mm wide. 210N series, the number of main grids is 12BB-18BB, the whole battery is 210-218mm long and 210-218mm wide, and one quarter of the battery is 210-218mm long and 52.5-54.5mm wide. When n=5, one fifth of the battery pieces are formed; 210R series, wherein the number of main grids is 10BB-16BB, the size of the whole battery is 210-218mm, the width is 182-186mm, and one-fifth battery is 182-186mm, and the width is 42-43.6mm; 210N series, the number of main grids is 12BB-18BB, the whole battery is 210-218mm long and 210-218mm wide, and one fifth of the battery is 210-218mm long and 42-43.6mm wide. When n=6, a sixth of the battery pieces are formed; 210R series, the number of main grids is 10BB-16BB, the whole battery is 210-218mm long, 182-186mm wide, and one sixth of the battery is 182-186mm long, 35-36.3mm wide; 210N series, the number of main grids is 12BB-18BB, the whole battery is 210-218mm long and 210-218mm wide, and one sixth of the battery is 210-218mm long and 35-36.3mm wide. The preparation method of the crystalline silicon Topcon multi-slice high-efficiency photovoltaic cell comprises the following steps: Step 1, cutting and scribing the printed and sintered finished battery piece to form a quarter battery piece, a fifth battery piece or a sixth battery piece; Step 2, stacking the cut battery piece trestle type in a metal boat, exposing the tangential plane position at the outer edge of the metal boat, and heating the inside of a placing cavity of the metal boat to 270 ℃ to ensure that the temperature of each temperature area in the cavity is stable and consistent; Step 3, vacuumizing and detecting leakage after the temperature is stable, so as to ensure that the cavity is in a vacuum sealing state; step 4, after the leak detection is qualified, introducing H 2 O with the flow rate of 2200+/-800 sccm for 7+/-4S, wherein the pressure of a furnace tube is 1800+/-800 mbar; Step 5, after the H 2 O gas is evacuated, introducing N 2 with the flow rate of 2500+/-1000 sccm for purging treatment, and removing the redundant H 2 O gas from