CN-122002968-A - Packaging structure for space deflection broadband microwave transmission based on side electrode

CN122002968ACN 122002968 ACN122002968 ACN 122002968ACN-122002968-A

Abstract

The invention discloses a packaging structure for space deflection broadband microwave transmission based on side electrodes, wherein the transmission structure comprises a first thin film circuit and a second thin film circuit, the first thin film circuit comprises a first substrate and a first grounded coplanar waveguide manufactured on the front surface of the first substrate, the second thin film circuit comprises a second substrate and a second grounded coplanar waveguide manufactured on the front surface of the second substrate, when the side surface of the first substrate is also provided with a side surface first GSG electrode, the second thin film circuit is arranged at the back surface side of the first substrate and enables the second grounded coplanar waveguide to be communicated with the side surface first GSG electrode, or when the side surface of the second substrate is also provided with a side surface second GSG electrode, the first thin film circuit is arranged at the back surface side of the second substrate and enables the first grounded coplanar waveguide to be communicated with the side surface second GSG electrode. The invention can keep the high-frequency signal transmission mode field stable, avoid parasitic inductance and reduce the transmission loss of the whole structure at high frequency.

Inventors

LUO YI
LI ZHAOZHU
XIONG BING
SUN CHANGZHENG

Assignees

清华大学

Dates

Publication Date: 20260508
Application Date: 20251217

Claims (10)

1. The packaging structure based on the side electrode space deflection broadband microwave transmission is characterized by comprising a space deflection broadband microwave transmission structure based on the side electrode and a chip, wherein the space deflection broadband microwave transmission structure based on the side electrode comprises a first thin film circuit and a second thin film circuit, the first thin film circuit comprises a first substrate and a first grounded coplanar waveguide manufactured on the front surface of the first substrate, the second thin film circuit comprises a second substrate and a second grounded coplanar waveguide manufactured on the front surface of the second substrate, and the chip is bonded on the first thin film circuit; When the side surface of the first substrate is also provided with a side surface first GSG electrode which is directly and electrically connected with the first grounding coplanar waveguide, the second thin film circuit is arranged at one side of the back surface of the first substrate, and the second grounding coplanar waveguide is in coplanar butt joint communication with the side surface first GSG electrode, or when the side surface of the second substrate is also provided with a side surface second GSG electrode which is directly and electrically connected with the second grounding coplanar waveguide, the first thin film circuit is arranged at one side of the back surface of the second substrate, and the first grounding coplanar waveguide is in coplanar butt joint communication with the side surface second GSG electrode.
2. The side electrode-based spatially-deflected broadband microwave transmissive package structure of claim 1, wherein the first grounded coplanar waveguide comprises two first ground electrodes and a first signal electrode positioned between the two first ground electrodes; the second grounding coplanar waveguide comprises two second grounding electrodes and a second signal electrode positioned between the two second grounding electrodes; When the first film circuit is provided with the side surface first GSG electrode, the side surface first GSG electrode comprises two side surface first grounding electrodes and side surface first signal electrodes positioned between the two side surface first grounding electrodes, the two side surface first grounding electrodes and the side surface first signal electrodes are respectively communicated between the two first grounding electrodes and the first signal electrodes and the two second grounding electrodes and the second signal electrodes correspondingly, or when the second film circuit is provided with the side surface second GSG electrode, the side surface second GSG electrode comprises two side surface second grounding electrodes and a side surface second signal electrode positioned between the two side surface second grounding electrodes, and the two side surface second grounding electrodes and the side surface second signal electrodes are respectively communicated between the two first grounding electrodes and the first signal electrodes and the two second grounding electrodes and the two second signal electrodes correspondingly.
3. The side electrode-based spatially-deflected broadband microwave transmission packaging structure of claim 2, wherein the width of the side first signal electrode and/or the spacing between the side first signal electrode and the side first ground electrode is adjusted to adjust the impedance of the side electrode-based spatially-deflected broadband microwave transmission structure to increase the impedance matching efficiency of the side electrode-based spatially-deflected broadband microwave transmission structure and the chip, or the width of the side second signal electrode and/or the spacing between the side second signal electrode and the side second ground electrode is adjusted to adjust the impedance of the side electrode-based spatially-deflected broadband microwave transmission structure to increase the impedance matching efficiency of the side electrode-based spatially-deflected broadband microwave transmission structure and the chip.
4. A packaging structure based on space deflection broadband microwave transmission of side surface electrode according to any one of claims 1-3, characterized in that if there is a first gap between the side surface first GSG electrode and the second grounded coplanar waveguide, a first solder sheet or a first metal sheet is disposed at the first gap to connect the side surface first GSG electrode and the second grounded coplanar waveguide, or flip chip bonding is performed at the first gap to connect the side surface first GSG electrode and the second grounded coplanar waveguide by using a third thin film circuit with a third GSG electrode having the same parameters as the side surface first GSG electrode.
5. A packaging structure based on space deflection broadband microwave transmission of side surface electrode according to any one of claims 1-3, characterized in that if there is a second gap between the side surface second GSG electrode and the first grounded coplanar waveguide, a second solder sheet or a second metal sheet is disposed at the second gap to connect the side surface second GSG electrode and the first grounded coplanar waveguide, or the second gap is flip-chip bonded to connect the side surface second GSG electrode and the first grounded coplanar waveguide by using a fourth thin film circuit with a fourth GSG electrode having the same parameters as the side surface second GSG electrode.
6. The packaging structure based on space deflection broadband microwave transmission of side electrodes according to claim 2, further comprising a tube shell and a metal table arranged in the tube shell, wherein the back surface of the first substrate of the first thin film circuit is fixed with the side surface of the metal table, the back surface of the second substrate of the second thin film circuit is fixed with the front surface of the metal table, and the tail end of the second signal electrode of the second grounded coplanar waveguide is connected with the output end of the tube shell.
7. The packaging structure based on space deflection broadband microwave transmission of a side electrode according to claim 6, wherein the back surface of the first substrate of the first thin film circuit is welded and fixed with the side surface of the metal table, and the back surface of the second substrate of the second thin film circuit is welded and fixed with the front surface of the metal table.
8. The package structure of claim 6, wherein the mounting method is that the chip is mounted on the first thin film circuit, the first thin film circuit is welded on the side surface of the metal table, then the second thin film circuit is welded on the front surface of the metal table, the second grounding waveguide is in flush butt joint with the side surface first GSG electrode, or the side surface second GSG electrode is in flush butt joint with the first grounding waveguide, and then the space deflection broadband microwave transmission structure based on the side surface electrode is connected with the output end of the tube shell.
9. The packaging structure for spatially deflecting broadband microwave transmission based on side electrodes according to claim 6, wherein the output end of the tube shell is a coaxial connector tail pin needle.
10. The side electrode-based spatially-deflected broadband microwave transmissive packaging structure of claim 6, wherein the metal mesa is a copper mesa.

Description

Packaging structure for space deflection broadband microwave transmission based on side electrode Technical Field The invention relates to the technical field of semiconductor optoelectronic device packaging, in particular to a packaging structure for space deflection broadband microwave transmission based on side electrodes. Background The surface incidence type photoelectric detector chip is a detector chip capable of realizing high bandwidth and high saturation output power performance at the same time, and has wide application in high-speed optical communication, microwave photon links, wireless communication and other systems. The module package is a key to ensure that the chip fully and stably plays its performance in different environments and different systems. Butterfly packages are the dominant form of packaging for high-speed optoelectronic devices, in which the optical signal and electrical signal transmission directions are parallel to one another in their conventional configuration. However, the optical signal input and electrical signal output directions of the surface incidence type photodetector chip are mutually perpendicular, and in order to adapt to the butterfly-shaped packaging structure, spatial deflection of the optical-electrical signal transmission link needs to be realized inside the module packaging structure. The planar thin film circuit is a low-profile, high-integration circuit type, and is widely applied to interconnection and packaging structures of high-speed semiconductor devices. At present, structures such as microwave lines, coplanar waveguides and the like in a planar thin film circuit can realize low-loss transmission of high-speed signals above tens of GHz. However, it can only achieve transmission of electrical signals in a plane, and cannot achieve spatial deflection. Therefore, it still cannot solve the problems encountered in the module package of the surface incidence type high-speed photodetector chip. Currently, in order to achieve spatial deflection in the transmission direction of an electrical signal, a microwave transmission structure based on three-dimensional wire connection as shown in fig. 9 has been proposed. The scheme adopts a three-dimensional wire bonding method to connect the film circuits at two mutually perpendicular ends, and although the space deflection in the transmission direction of the electric signal can be realized, the transmission loss is obviously increased at high frequency due to the inductance introduced by the lead. In addition, the lead structure is different from a planar thin film circuit, and the signal propagation modes are different under high frequency, so that abrupt changes of a signal mode field can be caused at the connection position of the lead and the thin film circuit, and the transmission of high frequency signals is not facilitated. In process realization, the three-dimensional wire bonding process has high difficulty, unstable connection effect and is unfavorable for guaranteeing the stability of the module performance. Disclosure of Invention The present invention aims to solve at least one of the technical problems in the related art to some extent. Therefore, an object of the present invention is to provide a packaging structure for spatially deflecting broadband microwave transmission based on side electrodes, which can maintain stability of a high-frequency signal transmission mode field, reduce loss caused by change of the transmission mode field, avoid parasitic inductance, and reduce transmission loss of the whole structure at high frequency. The packaging structure based on the spatial deflection broadband microwave transmission of the side electrode comprises the spatial deflection broadband microwave transmission structure based on the side electrode and a chip, wherein the spatial deflection broadband microwave transmission structure based on the side electrode comprises a first thin film circuit and a second thin film circuit, the first thin film circuit comprises a first substrate and a first grounded coplanar waveguide manufactured on the front surface of the first substrate, the second thin film circuit comprises a second substrate and a second grounded coplanar waveguide manufactured on the front surface of the second substrate, and the chip is bonded on the first thin film circuit; When the side surface of the first substrate is also provided with a side surface first GSG electrode which is directly and electrically connected with the first grounding coplanar waveguide, the second thin film circuit is arranged at one side of the back surface of the first substrate, and the second grounding coplanar waveguide is in coplanar butt joint communication with the side surface first GSG electrode, or when the side surface of the second substrate is also provided with a side surface second GSG electrode which is directly and electrically connected with the second grounding coplanar waveguide, the first