CN-122002973-A - Light emitting diode and light emitting device

CN122002973ACN 122002973 ACN122002973 ACN 122002973ACN-122002973-A

Abstract

The application provides a light emitting diode and a light emitting device. The LED comprises a first light-emitting unit, a second light-emitting unit and a third light-emitting unit which are sequentially connected in series, wherein the first light-emitting unit is electrically connected with a first electrode, the third light-emitting unit is electrically connected with a second electrode, the first light-emitting unit and the third light-emitting unit are arranged around the second light-emitting unit, the light-emitting surface of the second light-emitting unit is circular, the light-emitting surface of the first light-emitting unit and the light-emitting surface of the third light-emitting unit are all semicircular, and the light-emitting surface of the first light-emitting unit and the light-emitting surface of the third light-emitting unit are spliced to form a circular ring which is concentric with the light-emitting surface of the second light-emitting unit. The circular light-emitting area is favorable for gathering light towards the center, improving the axial light-emitting intensity and improving the directivity and the brightness uniformity of the light source.

Inventors

WANG JUN
HAN TAO
ZHANG JINGJING

Assignees

泉州三安半导体科技有限公司

Dates

Publication Date: 20260508
Application Date: 20251212

Claims (12)

1. The light-emitting diode is characterized by comprising a first light-emitting unit, a second light-emitting unit and a third light-emitting unit which are sequentially connected in series, wherein the first light-emitting unit and the third light-emitting unit are arranged around the second light-emitting unit, the first light-emitting unit is electrically connected with a first electrode, and the third light-emitting unit is electrically connected with a second electrode; The luminous surfaces of the first luminous unit and the third luminous unit are in a semicircular shape, and after being spliced, the luminous surfaces of the first luminous unit and the third luminous unit form a circular shape concentric with the luminous surface of the second luminous unit.
2. The light-emitting diode according to claim 1, wherein the ratio of the area of the light-emitting surface of the first light-emitting unit to the area of the light-emitting surface of the third light-emitting unit is 1:1, and the ratio of the area of the light-emitting surface of the second light-emitting unit to the area of the light-emitting surface of the first light-emitting unit or the area of the light-emitting surface of the third light-emitting unit is 0.7 to 1.3.
3. A light emitting diode according to claim 1 or 2, wherein a first gap is provided between the light emitting surface of the first light emitting unit and the light emitting surface of the second light emitting unit, a second gap is provided between the light emitting surface of the second light emitting unit and the light emitting surface of the third light emitting unit, and a third gap is provided between the light emitting surface of the first light emitting unit and the light emitting surface of the third light emitting unit.
4. The led of claim 3, wherein the first gap is between 10 μm and 40 μm; The second gap is 10-40 μm; the third gap is 10-40 μm.
5. The light-emitting diode according to claim 1, wherein the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are electrically insulated from each other by an insulating layer, and each of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit is provided with a conductive layer to form a series connection; the conductive layer and the first electrode of the first light emitting unit are electrically connected to each other through the insulating layer; the conductive layer of the second light emitting unit and the conductive layer of the first light emitting unit are electrically connected to each other through the insulating layer; the conductive layer of the third light emitting unit and the conductive layer of the second light emitting unit are electrically connected to each other through the insulating layer; The second electrode and the conductive layer of the third light emitting unit are electrically connected to each other through the insulating layer.
6. The led of claim 5, wherein the conductive layer comprises a first conductive layer and a second conductive layer stacked in sequence from top to bottom; The first conductive layer of the first light emitting unit is electrically connected with the first electrode; The second conductive layer of the first light emitting unit is electrically connected with the first conductive layer of the second light emitting unit; the second conductive layer of the second light emitting unit is electrically connected with the first conductive layer of the third light emitting unit; the second conductive layer of the third light emitting unit is electrically connected to the second electrode.
7. The led of claim 6, wherein the first conductive layer comprises a transparent conductive layer, a first reflective layer, and a current spreading layer sequentially disposed from top to bottom; the second conductive layer comprises a second reflecting layer and a bridging layer which are sequentially arranged from top to bottom; The current expansion layer of the first light emitting unit is electrically connected with the first electrode; The bridging layer of the first light emitting unit is electrically connected with the current expansion layer of the second light emitting unit; the bridge layer of the second light emitting unit is electrically connected with the current expansion layer of the third light emitting unit; The bridge layer of the third light emitting unit is electrically connected with the second electrode through the current spreading layer arranged below the second electrode.
8. The light-emitting diode according to claim 7, wherein each of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit includes a semiconductor stack including a first semiconductor layer, an active layer, and a second semiconductor layer disposed in this order from top to bottom, wherein at least one groove is provided in the semiconductor stack, the groove penetrating the second semiconductor layer, the active layer, and at least a portion of the first semiconductor layer; The transparent conductive layer is arranged below part of the second semiconductor layer; The insulating layer comprises a first insulating layer, the first insulating layer is arranged below the transparent conductive layer and extends to cover the side wall of the groove, and a plurality of first through holes are formed in the first insulating layer below the transparent conductive layer; The first reflecting layer is arranged below the first insulating layer below the transparent conducting layer, and the first reflecting layer is arranged in the first through hole so that the first reflecting layer is electrically connected with the second semiconductor layer through the transparent conducting layer; the current expansion layer is arranged below the first reflecting layer, and the current expansion layer of the first light emitting unit extends to cover below the first electrode.
9. The light emitting diode of claim 8, wherein the insulating layer further comprises a second insulating layer; the second insulating layer is arranged between the current expansion layer and the second reflecting layer, and extends to cover the first insulating layer in the groove and the lower part of the current expansion layer below the second electrode; The first conductive layers of the first light emitting unit, the second light emitting unit and the third light emitting unit are electrically insulated from each other by the first insulating layer and the second insulating layer, and the current spreading layer of the third light emitting unit is electrically insulated from the current spreading layer below the second electrode by the second insulating layer.
10. The light-emitting diode according to claim 9, wherein the second reflective layer is provided under a part of the second insulating layer, and the second reflective layer is provided on the second insulating layer in the recess and on the bottom wall of the recess so as to be electrically connected to the first semiconductor layer; A part of the second insulating layer of the second light emitting unit and a part of the second insulating layer of the third light emitting unit are provided with second through holes, and the second insulating layer below the second electrode is provided with at least one third through hole; the bridge layer is arranged below the second reflecting layer, in the second through hole and in the third through hole; The insulating layer further comprises a third insulating layer, the third insulating layer is arranged below the bridging layer, and the bridging layers of the first light-emitting unit, the second light-emitting unit and the third light-emitting unit are electrically insulated from each other through the third insulating layer.
11. The led of claim 10, wherein the bonding layer, the substrate, and the back gold layer are sequentially disposed under the third insulating layer from top to bottom.
12. A light-emitting device comprising a circuit board and a plurality of light-emitting elements disposed on the circuit board, wherein the light-emitting elements comprise the light-emitting diode according to any one of claims 1 to 11.

Description

Light emitting diode and light emitting device Technical Field The present invention relates to the field of semiconductor devices, and more particularly, to a light emitting diode and a light emitting device. Background In the fields of semiconductor illumination and high-power photoelectric application, the LED chip with the horizontal high-voltage vertical structure becomes a key device for meeting the requirements of high-voltage high-power application due to the fact that the LED chip can optimize a current path and improve power density. The LED chip has the core advantages that current flows along the vertical direction inside the chip, and compared with the traditional LED chip conducting in the horizontal direction, the LED chip can effectively reduce current transmission loss and adapt to higher power scenes. At present, the conventional high-voltage vertical structure LED chip is limited to two serial-parallel or serial-parallel layout forms in structural design. However, the traditional structure has obvious technical shortboards that on one hand, the improvement effect of two series-parallel or serial-parallel structures on current density is limited, the upper limit of power is difficult to break through further under the high-voltage high-power application scene, the performance requirements of high-brightness and high-power equipment cannot be fully met, on the other hand, the traditional structure lacks the optimal design on the light emitting direction, the light emitting area is dispersed, the light emitting intensity of axial light (namely, the emergent light along the direction of the vertical central axis of the chip) is weaker, the chip is caused to have lower light energy utilization rate in the application requiring directional high-brightness light emission (such as directional illumination, projection light source and the like), and the popularization and the application of the chip in the high-end photoelectric field are restricted. Disclosure of Invention In view of the defects and shortcomings of the light emitting diode in the prior art, the present application provides a light emitting diode and a light emitting device for improving current density and lifting axial luminous intensity. An embodiment of the present application provides a light emitting diode, including a first light emitting unit, a second light emitting unit, and a third light emitting unit sequentially connected in series, where the first light emitting unit and the third light emitting unit are disposed around the second light emitting unit, the first light emitting unit is electrically connected with a first electrode, and the third light emitting unit is electrically connected with a second electrode; Wherein the luminous surface of the second luminous unit is circular, the luminous surfaces of the first luminous unit and the third luminous unit are semicircular, the luminous surfaces of the first luminous unit and the third luminous unit are spliced to form a ring concentric with the luminous surface of the second luminous unit. According to another embodiment of the present application, there is provided a light emitting device including a wiring board and a plurality of light emitting elements including the light emitting diode of the present application disposed on the wiring board. As described above, the light emitting diode and the light emitting device of the present application have the following advantages: The luminous surface of the LED adopts an integral circular surrounding design and is divided into three areas, the three areas are electrically connected in series in the inside, so that the current density of the LED is effectively improved, the central area is designed into a circular luminous area, the light is gathered towards the center, the axial luminous intensity is improved, and the directivity and the brightness uniformity of the light source are improved. Drawings Fig. 1 is a schematic top view of a light emitting diode according to a first embodiment. Fig. 2 shows a schematic cross-sectional view along A-A in fig. 1. Fig. 3 to 14 are schematic cross-sectional views illustrating a manufacturing process of a light emitting diode according to a second embodiment of the application. Fig. 15 is a schematic structural diagram of a light emitting device according to a third embodiment of the present application. Description of element reference numerals 10, Circuit board, 20, light emitting element, 100, semiconductor stack, 101, first light emitting unit, 102, second light emitting unit, 103, third light emitting unit, 110, first semiconductor layer, 120, active layer, 130, second semiconductor layer, 140, recess, 200, first electrode, 300, second electrode, 400, first conductive layer, 410, transparent conductive layer, 420, first reflective layer, 430, current spreading layer, 500, second conductive layer, 510, second reflective layer, 520, bridge layer, 600, insulating layer, 610, f