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CN-122002974-A - Light emitting diode and preparation method thereof

CN122002974ACN 122002974 ACN122002974 ACN 122002974ACN-122002974-A

Abstract

The disclosure provides a light emitting diode and a preparation method thereof, and belongs to the technical field of semiconductors. The light emitting diode comprises an epitaxial structure, a reflective passivation layer, a first electrode and a second electrode, wherein the epitaxial structure comprises a p-type semiconductor layer, a light emitting layer and an n-type semiconductor layer which are sequentially stacked, the n-type semiconductor layer comprises an n-type ohmic contact layer, the n-type ohmic contact layer comprises a plurality of AlAs layers and a plurality of AlGaAs layers, the AlAs layers and the AlGaAs layers are alternately stacked, the first electrode and the second electrode are located on the same side of the epitaxial structure, the reflective passivation layer covers the surface, far away from the light emitting layer, of the n-type semiconductor layer, the first electrode and the second electrode, and the reflective passivation layer is provided with a window for exposing the first electrode and the second electrode. The present disclosure may increase the brightness of a light emitting diode.

Inventors

  • JIANG JIAN
  • WANG ZHILIANG
  • LI ZEYU
  • Diao Zichun
  • ZHANG XIANG
  • ZHANG LEI

Assignees

  • 京东方华灿光电(苏州)有限公司

Dates

Publication Date
20260508
Application Date
20251217

Claims (10)

  1. 1. A light emitting diode, characterized in that the light emitting diode comprises an epitaxial structure (2), a reflective passivation layer (3), a first electrode (5) and a second electrode (6); The epitaxial structure (2) comprises a p-type semiconductor layer (23), a light-emitting layer (21) and an n-type semiconductor layer (22) which are sequentially stacked; The n-type semiconductor layer (22) includes an n-type ohmic contact layer (221), the n-type ohmic contact layer (221) including a plurality of AlAs layers (2211) and a plurality of AlGaAs layers (2212), the AlAs layers (2211) and the AlGaAs layers (2212) being alternately laminated; -the first electrode (5) and the second electrode (6) are located on the same side of the epitaxial structure (2); The reflective passivation layer (3) covers the surface of the n-type semiconductor layer (22) remote from the light emitting layer (21), the first electrode (5) and the second electrode (6), and has a window opening exposing the first electrode (5) and the second electrode (6).
  2. 2. The light emitting diode according to claim 1, wherein the total thickness of the n-type ohmic contact layer (221) is 0.5 μm to 1.5 μm.
  3. 3. The light emitting diode according to claim 1, wherein the AlAs layer (2211) has a thickness of 400-650 a.
  4. 4. The light emitting diode according to claim 1, wherein the AlGaAs layer (2212) has a thickness of 400 a to 650 a.
  5. 5. The light emitting diode according to claim 1, wherein the thickness of the AlAs layer (2211) and the AlGaAs layer (2212) each satisfy the following formula: ; wherein d is the thickness of the AlAs layer (2211) and the AlGaAs layer (2212), lambda is the wavelength of light reflected by the n-type ohmic contact layer (221) in vacuum, and n is the refractive index of the AlAs layer (2211) and the AlGaAs layer (2212), respectively.
  6. 6. The light-emitting diode according to claim 1, wherein the Al component content in the AlGaAs layer (2212) is 0.4 to 0.6.
  7. 7. The light emitting diode of claim 1, wherein the n-type ohmic contact layer (221) is doped with silicon and has a carrier concentration of 5 x 10 18 ~8×10 18 /cm 3 .
  8. 8. The led of claim 1, wherein the number of AlAs layers (2211) is 5-15.
  9. 9. The light emitting diode according to any one of claims 1-8, wherein the n-type semiconductor layer (22) further comprises an n-type confinement layer (222), the n-type confinement layer (222) being located between the light emitting layer (21) and the n-type ohmic contact layer (221).
  10. 10. A method of manufacturing a light emitting diode, the method comprising: Preparing an epitaxial structure, wherein the epitaxial structure comprises a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer which are sequentially stacked, the n-type semiconductor layer comprises an n-type ohmic contact layer, the n-type ohmic contact layer comprises a plurality of AlAs layers and a plurality of AGaAs layers, and the AlAs layers and the AlGaAs layers are alternately stacked; preparing a first electrode and a second electrode, wherein the first electrode and the second electrode are positioned on the same side of the epitaxial structure; And preparing a passivation layer, wherein the reflection passivation layer covers the surface of the n-type semiconductor layer far away from the light-emitting layer, the first electrode and the second electrode, and the surface is provided with a window for exposing the first electrode and the second electrode.

Description

Light emitting diode and preparation method thereof Technical Field The disclosure belongs to the technical field of semiconductors, and in particular relates to a light emitting diode and a preparation method thereof. Background As a new energy-saving and environment-friendly light source, light emitting diodes are widely used in the fields of full-color display, illumination, car lights and the like. In the related art, a light emitting diode includes an epitaxial structure, a first electrode, a second electrode, and a reflective passivation layer. The epitaxial structure comprises a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer which are sequentially stacked. The n-type semiconductor layer includes an n-type GaAs ohmic contact layer. The first electrode and the second electrode are located on the same side of the epitaxial structure. The reflective passivation layer covers the surface of the epitaxial structure and the first electrode and the second electrode. The reflective passivation layer has a fenestration exposing the first electrode and the second electrode. However, light is emitted from the light emitting layer, reflected by the reflective passivation layer, and then emitted from the substrate. Because the reflective passivation layer is provided with windows for exposing the first electrode and the second electrode, the reflective passivation layer has an area which cannot reflect light, so that the reflectivity is low, and finally the brightness of the light-emitting diode is low. Disclosure of Invention The embodiment of the disclosure provides a light emitting diode and a preparation method thereof, which can improve the brightness of the light emitting diode. The technical scheme is as follows: The embodiment of the disclosure provides a light emitting diode, which comprises an epitaxial structure, a reflective passivation layer, a first electrode and a second electrode, wherein the epitaxial structure comprises a p-type semiconductor layer, a light emitting layer and an n-type semiconductor layer which are sequentially stacked, the n-type semiconductor layer comprises an n-type ohmic contact layer, the n-type ohmic contact layer comprises a plurality of AlAs layers and a plurality of AlGaAs layers, the AlAs layers and the AlGaAs layers are alternately stacked, the first electrode and the second electrode are positioned on the same side of the epitaxial structure, the reflective passivation layer covers the surface, far away from the light emitting layer, of the n-type semiconductor layer, the first electrode and the second electrode, and the reflective passivation layer is provided with an opening window for exposing the first electrode and the second electrode. In yet another implementation of the present disclosure, the total thickness of the n-type ohmic contact layer is 0.5 μm to 1.5 μm. In yet another implementation of the present disclosure, in each of the periodic structures, the AlAs layer has a thickness of 400 a to 650 a. In yet another implementation of the present disclosure, in each of the periodic structures, the AlGaAs layer has a thickness of 400 a to 650 a. In yet another implementation of the present disclosure, the thicknesses of the AlAs layer and the AlGaAs layer each satisfy the following formula: ; Wherein d is the thickness of the AlAs layer and the AlGaAs layer respectively, lambda is the wavelength of light reflected by the n-type ohmic contact layer in vacuum, and n is the refractive index of the AlAs layer and the AlGaAs layer respectively. In still another implementation manner of the present disclosure, in each of the periodic structures, an Al component content in the AlGaAs layer is 0.4 to 0.6. In yet another implementation of the present disclosure, the n-type ohmic contact layer is doped with a carrier concentration of 5×10 18~8×1018/cm3. In yet another implementation of the disclosure, the number of AlAs layers is 5-15. In yet another implementation of the present disclosure, the n-type semiconductor layer further includes an n-type confinement layer between the light emitting layer and the n-type ohmic contact layer. On the other hand, the embodiment of the disclosure also provides a preparation method of the light-emitting diode, which comprises the steps of preparing an epitaxial structure, preparing a passivation layer, and preparing the reflective passivation layer, wherein the epitaxial structure comprises a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer which are sequentially stacked, the n-type semiconductor layer comprises an n-type ohmic contact layer, the n-type ohmic contact layer comprises a plurality of AlAs layers and a plurality of AGaAs layers, the AlAs layers are alternately stacked, the AlGaAs layers are prepared, the first electrode and the second electrode are positioned on the same side of the epitaxial structure, and the reflective passivation layer covers