Search

CN-122002975-A - Semiconductor chip and method for manufacturing the same

CN122002975ACN 122002975 ACN122002975 ACN 122002975ACN-122002975-A

Abstract

The disclosure provides a semiconductor chip and a preparation method thereof, and belongs to the technical field of semiconductor preparation. The semiconductor chip comprises a substrate and a shading layer, wherein the substrate comprises a growth surface and a supporting surface which are opposite to each other, and the shading layer is positioned on the supporting surface of the substrate. The method and the device can effectively improve the detection and photoetching accuracy of the scanning electron microscope.

Inventors

  • Cai Fuwang
  • XU XIAOSONG
  • LEI XIN
  • WANG JIANGBO
  • ZHU LEI
  • YU ZIJIAN

Assignees

  • 京东方华灿光电(浙江)有限公司

Dates

Publication Date
20260508
Application Date
20251224

Claims (10)

  1. 1. A semiconductor chip is characterized by comprising a substrate (10) and a light shielding layer (20); The substrate (10) comprises a growth surface (110) and a supporting surface (120), wherein the growth surface (110) and the supporting surface (120) are respectively opposite to each other of the substrate (10); the light shielding layer (20) is located on a supporting surface (120) of the substrate (10).
  2. 2. The semiconductor chip according to claim 1, characterized in that the orthographic projection of the light shielding layer (20) on the support surface (120) of the substrate (10) is located within the support surface (120) of the substrate (10).
  3. 3. The semiconductor chip according to claim 1, wherein the thickness of the light shielding layer (20) is 50-200 nm.
  4. 4. The semiconductor chip according to claim 1, wherein the light shielding layer (20) is a titanium layer or a titanium nitride layer.
  5. 5. A method of manufacturing a semiconductor chip, comprising: Providing a substrate (10), wherein the substrate (10) comprises a growth surface (110) and a supporting surface (120), and the growth surface (110) and the supporting surface (120) are respectively opposite to the substrate (10); a light shielding layer (20) is deposited on a support surface (120) of the substrate (10).
  6. 6. The method of manufacturing according to claim 5, characterized in that depositing a light shielding layer (20) on a support surface (120) of the substrate (10) comprises: And depositing a light shielding layer (20) with the thickness of 50-200 nm on the supporting surface (120) of the substrate (10), wherein the orthographic projection of the light shielding layer (20) on the supporting surface (120) of the substrate (10) is positioned in the supporting surface (120) of the substrate (10).
  7. 7. The method of manufacturing according to claim 5, characterized in that after deposition of the light-shielding layer (20) on the support surface (120) of the substrate (10), the method of manufacturing further comprises: Scanning electron microscopy of the substrate (10), and/or, -Lithographically exposing said substrate (10).
  8. 8. A method of manufacturing a semiconductor chip, comprising: Providing a substrate (10), wherein the substrate (10) comprises a growth surface (110) and a supporting surface (120), and the growth surface (110) and the supporting surface (120) are respectively opposite to the substrate (10); Depositing a light shielding layer (20) on a support surface (120) of the substrate (10); The light-shielding layer (20) is removed.
  9. 9. The method of manufacturing according to claim 8, characterized in that depositing a light shielding layer (20) on a support surface (120) of the substrate (10) comprises: And depositing a light shielding layer (20) with the thickness of 50-200 nm on the supporting surface (120) of the substrate (10), wherein the orthographic projection of the light shielding layer (20) on the supporting surface (120) of the substrate (10) is positioned in the supporting surface (120) of the substrate (10).
  10. 10. The method of manufacturing according to claim 8, wherein removing the light shielding layer (20) comprises: spin-coating photoresist on a growth surface (110) of the substrate (10); solidifying the photoresist in a stepwise heating mode; And (3) carrying out organic cleaning on the shading layer (20).

Description

Semiconductor chip and method for manufacturing the same Technical Field The disclosure belongs to the technical field of semiconductor preparation, and in particular relates to a semiconductor chip and a preparation method thereof. Background The substrate is one of the constituent parts of the semiconductor chip, which is used to provide a basis for epitaxial growth. In the related art, the sapphire substrate is widely used in optoelectronic devices such as light emitting diode chips, laser chips, and the like due to its excellent physical and chemical properties, such as high hardness, high thermal conductivity, chemical inertness, good insulation, and the like. However, since the light transmittance of the sapphire substrate is very high, it is very likely to be disturbed by the background when scanning electron microscope inspection or photolithography is performed in the process of manufacturing the semiconductor chip. Disclosure of Invention The embodiment of the disclosure provides a semiconductor chip and a preparation method thereof, which can effectively improve the accuracy of scanning electron microscope detection and photoetching. The technical scheme is as follows: In a first aspect, embodiments of the present disclosure provide a semiconductor chip including a substrate and a light shielding layer; The substrate comprises a growth surface and a supporting surface, wherein the growth surface and the supporting surface are opposite surfaces of the substrate respectively; The shading layer is positioned on the supporting surface of the substrate. In one implementation of the present disclosure, the orthographic projection of the light shielding layer on the support surface of the substrate is located within the support surface of the substrate. In another implementation mode of the disclosure, the thickness of the light shielding layer is 50-200 nm. In yet another implementation of the present disclosure, the light shielding layer is a titanium layer or a titanium nitride layer. In a second aspect, embodiments of the present disclosure provide a method for manufacturing a semiconductor chip, the method including: Providing a substrate, wherein the substrate comprises a growth surface and a supporting surface, and the growth surface and the supporting surface are respectively opposite to the two surfaces of the substrate; and depositing a shading layer on the supporting surface of the substrate. In yet another implementation of the present disclosure, depositing a light shielding layer on a support surface of the substrate includes: and depositing a light shielding layer with the thickness of 50-200 nm on the supporting surface of the substrate, wherein the orthographic projection of the light shielding layer on the supporting surface of the substrate is positioned in the supporting surface of the substrate. In yet another implementation of the present disclosure, after depositing the light shielding layer on the support surface of the substrate, the preparation method further includes: Scanning electron microscopy of the substrate, and/or, And photoetching the substrate. In a third aspect, embodiments of the present disclosure provide a method for manufacturing a semiconductor chip, the method including: Providing a substrate, wherein the substrate comprises a growth surface and a supporting surface, and the growth surface and the supporting surface are respectively opposite to the two surfaces of the substrate; depositing a shading layer on the supporting surface of the substrate; and removing the shading layer. In yet another implementation of the present disclosure, depositing a light shielding layer on a support surface of the substrate includes: and depositing a light shielding layer with the thickness of 50-200 nm on the supporting surface of the substrate, wherein the orthographic projection of the light shielding layer on the supporting surface of the substrate is positioned in the supporting surface of the substrate. In yet another implementation of the present disclosure, removing the light shielding layer includes: spin coating photoresist on the growth surface of the substrate; solidifying the photoresist in a stepwise heating mode; and carrying out organic cleaning on the shading layer. The technical scheme provided by the embodiment of the disclosure has the beneficial effects that: The embodiment of the disclosure provides a semiconductor chip, which comprises a substrate and a shading layer. The substrate comprises a growth surface and a supporting surface which are positioned on opposite sides, and the shading layer is positioned on the supporting surface of the substrate, namely, the side which is positioned on the side opposite to the growth surface. Because the shading layer has shading capability, the background can not be interfered any more in the process of scanning electron microscope detection or photoetching, and the accuracy of the scanning electron microscope detect