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CN-122002977-A - Light emitting diode and preparation method thereof

CN122002977ACN 122002977 ACN122002977 ACN 122002977ACN-122002977-A

Abstract

The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode comprises an epitaxial structure and a transparent conductive layer, wherein the epitaxial structure comprises a first through hole, the transparent conductive layer is positioned on the surface of the epitaxial structure, the transparent conductive layer comprises a second through hole surrounding the first through hole, the second through hole comprises a main body part and a plurality of extension parts, and the extension parts surround the main body part and are connected with the main body part.

Inventors

  • LIN ZHENHUA
  • MA GUOQIANG
  • WANG WEI
  • Bi Zun
  • CHEN PEIRAN
  • CUI WEIHAO

Assignees

  • 京东方华灿光电(浙江)有限公司

Dates

Publication Date
20260508
Application Date
20251222

Claims (10)

  1. 1. A light emitting diode, characterized in that the light emitting diode comprises an epitaxial structure (100) and a transparent conductive layer (200); The epitaxial structure (100) comprises a first through hole (2001), the transparent conductive layer (200) is located on the surface of the epitaxial structure (100), the transparent conductive layer (200) comprises a second through hole (2002) surrounding the first through hole (2001), the second through hole (2002) comprises a main body part (2003) and a plurality of extension parts (2004), and the extension parts (2004) surround the main body part (2003) and are connected with the main body part (2003).
  2. 2. The light emitting diode according to claim 1, wherein the main body portion (2003) and the first through hole (2001) are concentric circles, and a distance L1 between the main body portion (2003) and the first through hole (2001) is 3 to 5 μm.
  3. 3. The led of claim 1, wherein the profile of the extension (2004) is arc-shaped, and the distance L2 between the apex of the extension (2004) and the first through hole (2001) is 8-15 μm.
  4. 4. A light emitting diode according to any one of claims 1 to 3, wherein the second through hole (2002) is in an axisymmetric pattern.
  5. 5. The led of claim 4, wherein said second through hole (2002) comprises 4-12 of said extensions (2004).
  6. 6. A light emitting diode according to any one of claims 1 to 3, further comprising a silver mirror layer (400), the silver mirror layer (400) being located on a surface of the epitaxial structure (100) and covering the transparent conductive layer (200); -the silver mirror layer (400) comprises a third via (3000) surrounding the first via (2001); the third through hole (3000) is located between the first through hole (2001) and the second through hole (2002), or a part of the third through hole (3000) is located between the first through hole (2001) and the second through hole (2002), and another part is located outside the second through hole (2002).
  7. 7. The led of claim 6, wherein the distance between said third via (3000) and said first via (2001) is 3-5 μm.
  8. 8. A method of manufacturing a light emitting diode, the method comprising: manufacturing an epitaxial structure, wherein the epitaxial structure comprises a first through hole; And manufacturing a transparent conductive layer on the epitaxial structure, wherein the transparent conductive layer comprises a second through hole surrounding the first through hole, the second through hole comprises a main body part and a plurality of extension parts, and the extension parts surround the main body part and are connected with the main body part.
  9. 9. The method of claim 8, wherein the body portion and the first through hole are concentric circles, and a distance between the body portion and the first through hole is 3-5 μm.
  10. 10. The method of claim 8, wherein the profile of the extension is arc-shaped, and a distance between the vertex of the extension and the first through hole is 8-15 μm.

Description

Light emitting diode and preparation method thereof Technical Field The present disclosure relates to the field of light emitting devices, and in particular, to a light emitting diode and a method for manufacturing the same. Background A light emitting Diode (LIGHT EMITTING Diode, LED) is a semiconductor device capable of emitting light, has advantages of energy saving, high brightness, high durability, long life, light weight, and the like, and has been widely used in fields of illumination, display, and the like. The related art provides a light emitting diode structure including an epitaxial structure and a transparent conductive layer. The epitaxial structure comprises a step structure, the step structure comprises a step top surface and a step bottom surface, and the transparent conductive layer is located on the step top surface of the epitaxial structure. When the light-emitting diode with the structure is manufactured, the transparent conductive layer is deposited and etched, conductive particles of the transparent conductive layer are easy to remain on the epitaxial structure in the manufacturing process, so that a leakage channel is generated, and the yield of the light-emitting diode is low. Disclosure of Invention The embodiment of the disclosure provides a light-emitting diode and a preparation method thereof, which can prevent the light-emitting diode from electric leakage and improve the yield of the light-emitting diode. The technical scheme is as follows: a light emitting diode is provided, the light emitting diode including an epitaxial structure and a transparent conductive layer; The epitaxial structure comprises a first through hole, the transparent conductive layer is located on the surface of the epitaxial structure, the transparent conductive layer comprises a second through hole surrounding the first through hole, the second through hole comprises a main body part and a plurality of extension parts, and the extension parts surround the main body part and are connected with the main body part. Optionally, the main body portion and the first through hole are concentric circles, and a distance between the main body portion and the first through hole is 3-5 μm. Optionally, the profile of the extension portion is arc-shaped, and the distance between the vertex of the extension portion and the first through hole is 8-15 μm. Optionally, the second through hole is in an axisymmetric pattern. Optionally, the second through hole includes 4-12 extension parts. Optionally, the light emitting diode further comprises a silver mirror layer, wherein the silver mirror layer is positioned on the surface of the epitaxial structure and covers the transparent conductive layer; The silver mirror layer includes a third via surrounding the first via; The third through hole is located between the first through hole and the second through hole, or one part of the third through hole is located between the first through hole and the second through hole, and the other part of the third through hole is located outside the second through hole. Optionally, the distance between the third through hole and the first through hole is 3-5 μm. In another aspect, a method of fabricating a light emitting diode is provided, the method comprising fabricating an epitaxial structure, the epitaxial structure comprising a first via; And manufacturing a transparent conductive layer on the epitaxial structure, wherein the transparent conductive layer comprises a second through hole surrounding the first through hole, the second through hole comprises a main body part and a plurality of extension parts, and the extension parts surround the main body part and are connected with the main body part. Optionally, the main body portion and the first through hole are concentric circles, and a distance between the main body portion and the first through hole is 3-5 μm. Optionally, the profile of the extension portion is arc-shaped, and the distance between the vertex of the extension portion and the first through hole is 8-15 μm. The technical scheme provided by the embodiment of the disclosure has the beneficial effects that: In order to avoid that the conductive particles remained in the etching process of the transparent conductive layer are contacted with the side wall of the epitaxial structure, the diameter of the second through hole is generally increased, but the area of the transparent conductive layer is greatly reduced, so that the current expansion is insufficient, and the brightness of the light emitting diode is reduced. In the embodiment of the disclosure, the second through hole comprises a main body part and a plurality of extension parts, the extension parts surround the main body part and are connected with the main body part, compared with a round hole, the whole circumference of the second through hole is greatly increased, so that the average distance from each point on the second through hole to the first through hol