CN-122002984-A - LED light-emitting structure, preparation method and multilayer stacked LED light-emitting structure
Abstract
The invention discloses an LED light-emitting structure, a preparation method and a multi-layer stacked LED light-emitting structure, wherein the preparation method of the LED light-emitting structure comprises the following steps of providing a substrate; the LED chip with the first electrode in contact with the target area and the LED chip with the first electrode not in contact with the target area are randomly formed after the plurality of LED chips are randomly scattered on at least the target area, the LED chip with the first electrode in contact with the target area is called an effective LED chip, the rest LED chips are called ineffective LED chips, a package body which is used for coating all the LED chips is arranged outside the substrate, and a second conductive layer is prepared above the package body and is electrically connected with the second electrode of the effective LED chip. By means of the mode of randomly dispersing the LED chips, production efficiency is improved, and production cost is reduced.
Inventors
- QU HONGXIA
- GUO CHUANG
Assignees
- 苏州中科光聚技术有限公司
Dates
- Publication Date
- 20260508
- Application Date
- 20260108
Claims (20)
- 1. The preparation method of the LED light-emitting structure is characterized by comprising the following steps of: s1, providing a substrate (1), wherein a first conductive layer (10) is arranged on the surface of the substrate (1), and the first conductive layer (10) comprises a target area (100); S2, randomly dispersing a plurality of LED chips (2) on at least the target area (100), wherein the LED chips (2) comprise an electrode pair, the electrode pair comprises a first electrode (20) and a second electrode (21) which are respectively positioned on two opposite surfaces of the LED chips (2), after randomly dispersing the plurality of LED chips (2) on at least the target area (100), the LED chips (2) with the first electrode (20) in contact with the target area (100) and the LED chips (2) with the first electrode (20) not in contact with the target area (100) are randomly formed, the LED chips (2) with the first electrode (20) in contact with the target area (100) are called active LED chips (2 a), and the rest LED chips (2) are called inactive LED chips (2 b); S3, arranging packaging bodies (3) which cover all the LED chips (2) outside the substrate (1); S4, preparing a second conductive layer (11) above the packaging body (3), wherein the second conductive layer (11) is electrically connected with a second electrode (21) of the effective LED chip (2 a).
- 2. The method for manufacturing the LED lighting structure according to claim 1, wherein in the step S2, the number of LED chips (2) carried by each target area (100) is not less than 8.
- 3. The method for manufacturing the LED lighting structure according to claim 1, wherein in the step S2, the step of randomly dispersing the plurality of LED chips (2) on at least the target area (100) includes the steps of: s21, placing a plurality of LED chips (2) in liquid to form LED slurry; S22, transferring the LED paste to at least the target area (100).
- 4. A method of manufacturing a LED lighting structure according to claim 3, characterized in that in step S22, the LED paste is transferred to the target area (100) by means of screen printing or embossing or spraying or printing.
- 5. The method of manufacturing a light emitting structure for an LED according to claim 1, wherein in the step S4, when the second conductive layer (11) is formed over the package body (3), an insulating layer (12) is further formed to cover the second conductive layer (11), and the insulating layer (12) and/or the substrate (1) are made of a transparent material, or The step S3 further comprises the step of preparing a protective layer outside the second conductive layer (11), wherein the protective layer and/or the substrate (1) is made of transparent material.
- 6. The method for manufacturing the LED lighting structure according to claim 1, wherein the step S3 further includes the step of thinning the upper surface of the package body (3) to expose the second electrode (21) of the LED chip (2).
- 7. The method of manufacturing a LED lighting structure according to claim 1, wherein the first conductive layer (10) comprises a plurality of target areas (100), all of the target areas (100) being used for carrying LED chips (2) of the same lighting color or each of the target areas (100) being used for carrying LED chips (2) of two or three different lighting colors.
- 8. The method of manufacturing the LED lighting structure according to claim 1, wherein in the step S2, when the plurality of LED chips (2) are randomly dispersed on at least the target area (100), the plurality of LED chips (2) are randomly dispersed on the entire surface of the substrate (1) or the plurality of LED chips (2) are randomly dispersed only in a range corresponding to the target area (100).
- 9. The method of manufacturing a LED lighting structure according to claim 1, wherein the first conductive layer (10) comprises two or three target areas among a first color target area for carrying a first color LED chip, a second color target area for carrying a second color LED chip, and a third color target area for carrying a third color LED chip, and wherein in the step S2, when the LED chips (2) are randomly scattered on at least the target area (100), the LED chips (2) of the corresponding light emission colors are randomly scattered in the target areas carrying LED chips of different light emission colors in a divided manner.
- 10. The method for manufacturing the LED lighting structure according to claim 1, wherein in the step S2, when the LED chips (2) are randomly dispersed on at least the target area (100), the LED chips (2) of two or three different light emission colors are randomly dispersed on at least the target area (100) at the same time.
- 11. The method of manufacturing a LED lighting structure according to any one of claims 1 to 10, characterized in that the center of gravity of the LED chip (2) is close to the first electrode (20).
- 12. A method of manufacturing a LED lighting structure according to claim 11, characterized in that the LED chip (2) comprises a metallic mass connected to its first electrode.
- 13. The method for manufacturing the LED lighting structure according to claim 11, wherein the cross-sectional area of the end of the first electrode (20) of the LED chip (2) is larger than the cross-sectional area of the end of the second electrode (21).
- 14. The method of manufacturing a LED light structure according to any one of claims 1 to 10, wherein the LED chip (2) is rectangular or square; the LED chip (2) comprises two sets of electrode pairs, the first electrodes (20) of the two sets of electrode pairs being located on two adjacent surfaces of the LED chip (2), or The LED chip (2) comprises three sets of electrode pairs, the first electrodes (20) of the three sets of electrode pairs being located on three adjacent surfaces of the LED chip (2).
- 15. An LED lighting structure, comprising: A substrate (1), wherein a first conductive layer (10) is arranged on the surface of the substrate (1), and the first conductive layer (10) comprises a target area (100); -a plurality of LED chips (2) randomly distributed over at least the target area (100), the LED chips (2) comprising an electrode pair comprising a first electrode (20) and a second electrode (21) respectively located on opposite surfaces of the LED chips (2), the position and posture of the LED chips (2) being random, the first electrode (20) of one or more of the LED chips (2) being in contact with the target area (100), the LED chips (2) with which the first electrode (20) is in contact with the target area (100) being referred to as active LED chips (2 a), the remaining LED chips (2) being referred to as inactive LED chips (2 b); A package body (3) which is wrapped outside all the LED chips (2), a second electrode (21) of the LED chips (2) being exposed from the top surface of the package body (3), and -A second conductive layer (11), said second conductive layer (11) being electrically connected to a second electrode (21) of said active LED chip (2 a).
- 16. An LED lighting structure according to claim 15, characterized in that the LED lighting structure comprises an insulating layer (12) coated outside the second conductive layer (11), the insulating layer (12) and/or the substrate (1) being made of a transparent material, or The LED light-emitting structure comprises a protective layer (13) positioned outside the second conductive layer (11), and the protective layer and/or the substrate (1) are/is made of transparent materials.
- 17. The LED lighting structure according to claim 15, wherein the first conductive layer (10) comprises a plurality of colored target areas distributed in an array, each colored target area comprising three target areas (100) arranged at intervals and respectively carrying LED chips (2) of different light emission colors.
- 18. The LED lighting structure according to any one of claims 15 to 17, characterized in that the center of gravity of the LED chip (2) is close to the first electrode (20), that the LED chip (2) comprises a metallic mass connected to its first electrode, or that the cross-sectional area of the end of the first electrode (20) of the LED chip (2) is larger than the cross-sectional area of the end of the second electrode (21).
- 19. The LED lighting structure according to any one of claims 15 to 17, characterized in that the LED chip (2) is cuboid or square; the LED chip (2) comprises two sets of electrode pairs, the first electrodes (20) of the two sets of electrode pairs being located on two adjacent surfaces of the LED chip (2), or The LED chip (2) comprises three sets of electrode pairs, the second electrodes (21) of the three sets of electrode pairs being located on three adjacent surfaces of the LED chip (2).
- 20. A multi-layer stacked LED lighting structure, comprising at least two layers of stacked LED lighting structures, wherein the LED lighting structures are the LED lighting structures of claim 15, 16, 18 or 19, the light emission colors of the LED chips (2) on the same layer of LED lighting structure are the same, and the light emission colors of the LED chips (2) on each layer of LED lighting structure are different.
Description
LED light-emitting structure, preparation method and multilayer stacked LED light-emitting structure Technical Field The invention relates to the technical field of manufacturing of light emitting devices, in particular to an LED light emitting structure, a manufacturing method and a multi-layer stacked LED light emitting structure. Background When manufacturing display equipment, the transfer of huge quantity of LED chips is involved, the quantity of LED chips to be transferred is different according to the different resolutions of display screens, and how to quickly and accurately transfer the tiny chips from a growth substrate to a target driving substrate is generally involved in the transfer of hundreds of thousands or even tens of millions of LED chips, and the transfer precision, efficiency, stability and yield are ensured, so that the method becomes a key place for realizing large-scale commercial production of LEDs. Currently, in order to realize efficient transfer of LED chips, a variety of technical paths for transferring LED chips in huge amounts have been developed in the industry, in which electrostatic force seals, magnetic force seals, elastic seals, laser-assisted transfer, fluid self-assembly, and the like are more common. The existing LED chips are usually required to be placed at required preset positions one by one, so that the quantity is huge, time and resources are extremely consumed, and the position accuracy requirement on the assembled LED chips is high, so that the requirement on the process is high, and the cost is high. Accordingly, there is a need for an improvement over the prior art to overcome the deficiencies described in the prior art. The foregoing is provided merely to facilitate the understanding of the principles of the application and is not admitted to be prior art by the foregoing disclosure. Disclosure of Invention The invention aims to provide an LED light-emitting structure, a preparation method and a multi-layer stacked LED light-emitting structure so as to reduce the process difficulty. In order to achieve the above object, in a first aspect, the present invention provides a method for manufacturing an LED light emitting structure, including the following steps: s1, providing a substrate, wherein a first conductive layer is arranged on the surface of the substrate, and the first conductive layer comprises a target area; S2, randomly dispersing a plurality of LED chips on at least the target area, wherein the LED chips comprise an electrode pair, the electrode pair comprises a first electrode and a second electrode which are respectively positioned on two opposite surfaces of the LED chips, after the plurality of LED chips are randomly dispersed on at least the target area, the LED chips with the first electrode in contact with the target area and the LED chips with the first electrode not in contact with the target area are randomly formed, the LED chips with the first electrode in contact with the target area are called effective LED chips, and the rest LED chips are called ineffective LED chips; s3, arranging packaging bodies for coating all the LED chips outside the substrate; s4, preparing a second conductive layer above the packaging body, wherein the second conductive layer is electrically connected with a second electrode of the effective LED chip. Further, in the step S2, the number of LED chips carried by each target area is not less than 8. Further, in the step S2, the step of randomly dispersing the plurality of LED chips on at least the target area includes the steps of: S21, placing a plurality of LED chips in liquid to form LED slurry; s22, transferring the LED paste to at least the target area. Further, in the step S22, the LED paste is transferred to the target area by screen printing or embossing or spraying or printing. Further, in the step S4, when a second conductive layer is prepared above the package, an insulating layer is further formed to cover the second conductive layer, and the insulating layer and/or the substrate are made of transparent material, or The step S3 further comprises the step of preparing a protective layer outside the second conductive layer, wherein the protective layer and/or the substrate are/is made of transparent materials. Further, the step S3 further comprises the step of thinning the upper surface of the package body to expose the second electrode of the LED chip. Further, the first conductive layer includes a plurality of target areas, all of which are used for carrying LED chips of the same emission color or each of which are used for carrying LED chips of two or three different emission colors. Further, in the step S2, when the plurality of LED chips are scattered randomly on at least the target area, the plurality of LED chips are scattered randomly on the entire surface of the substrate or only in a range corresponding to the target area. Further, the first conductive layer includes two or three target ar