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CN-122002988-A - Light emitting diode and manufacturing method thereof

CN122002988ACN 122002988 ACN122002988 ACN 122002988ACN-122002988-A

Abstract

The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode comprises a plurality of epitaxial structures, a first bonding pad group and a second bonding pad group which are connected in series, wherein the first bonding pad group comprises a plurality of bonding pads, the second bonding pad group comprises a plurality of bonding pads, the bonding pads of the first bonding pad group are connected through a first connecting part, the bonding pads of the second bonding pad group are connected through a second connecting part, the width of the first connecting part is smaller than that of the bonding pads of the first bonding pad group, and the width of the second connecting part is smaller than that of the bonding pads of the second bonding pad group.

Inventors

  • FU XINJUN
  • ZHAO SHIJIA
  • YING DANQING
  • GUO ZEWEN
  • XIA ZHANGGEN
  • LIU CHUANGUI
  • GAO YANLONG
  • WANG HUINING

Assignees

  • 京东方华灿光电(浙江)有限公司

Dates

Publication Date
20260508
Application Date
20251222

Claims (10)

  1. 1. A light emitting diode, characterized in that the light emitting diode comprises a plurality of epitaxial structures (10) connected in series, a first set of bonding pads (21) and a second set of bonding pads (22); The first bonding pad group (21) comprises a plurality of bonding pads (20), and the second bonding pad group (22) comprises a plurality of bonding pads (20); the bonding pads (20) of the first bonding pad group (21) are connected through a first connecting part (31), and the bonding pads (20) of the second bonding pad group (22) are connected through a second connecting part (32); The width of the first connection portion (31) is smaller than the width of the bonding pad (20) of the first bonding pad group (21), and the width of the second connection portion (32) is smaller than the width of the bonding pad (20) of the second bonding pad group (22).
  2. 2. The led of claim 1, further comprising a third insulating layer (110); -the third insulating layer (110) is located between the first set of pads (21) and the plurality of epitaxial structures (10) in series, and-the third insulating layer (110) is located between the second set of pads (22) and the plurality of epitaxial structures (10) in series; the third insulating layer (110) has a via; of the plurality of pads (20) of the first pad group (21), only one of the pads (20) is connected to one of the epitaxial structures (10) of the plurality of tandem epitaxial structures (10) through a via of the third insulating layer (110); Of the plurality of pads (20) of the second set of pads (22), only one of the pads (20) is connected to another one of the plurality of tandem epitaxial structures (10) through a via of the third insulating layer (110).
  3. 3. The light emitting diode according to claim 2, wherein the thickness of the third insulating layer (110) is 20000-30000 angstroms.
  4. 4. A light emitting diode according to any one of claims 1 to 3, wherein the widths of the first connection portion (31) and the second connection portion (32) are 18-22 μm, respectively.
  5. 5. A light emitting diode according to any one of claims 1 to 3, wherein the lengths of the first connection portion (31) and the second connection portion (32) are 190-210 μm, respectively.
  6. 6. A light emitting diode according to any one of claims 1 to 3, characterized in that the first set of pads (21) and the second set of pads (22) each comprise 2 of the pads (20).
  7. 7. The light emitting diode according to claim 6, wherein the first bonding pad group (21) and the second bonding pad group (22) are correspondingly arranged in2 rows.
  8. 8. A method of fabricating a light emitting diode, the method comprising: manufacturing a plurality of epitaxial structures connected in series; The method comprises the steps of manufacturing a first bonding pad group and a second bonding pad group, wherein the first bonding pad group comprises a plurality of bonding pads, the bonding pads of the first bonding pad group are connected through a first connecting part, the bonding pads of the second bonding pad group are connected through a second connecting part, the width of the first connecting part is smaller than that of the bonding pads of the first bonding pad group, and the width of the second connecting part is smaller than that of the bonding pads of the second bonding pad group.
  9. 9. The method of claim 8, wherein the first and second connection portions each have a width of 18-22 μm.
  10. 10. The method of claim 8, wherein the first and second connection portions are 190-210 μm in length, respectively.

Description

Light emitting diode and manufacturing method thereof Technical Field The present disclosure relates to the field of light emitting devices, and in particular, to a light emitting diode and a method for manufacturing the same. Background A light emitting Diode (LIGHT EMITTING Diode, LED) is a semiconductor device capable of emitting light, has advantages of energy saving, high brightness, high durability, long life, light weight, and the like, and has been widely used in fields of lighting, display, vehicle-mounted and the like. The related art provides a light emitting diode structure including an epitaxial structure, an electrode structure, a passivation layer, and a pad structure. The electrode structure is located on the epitaxial structure, the passivation layer covers the electrode structure and the epitaxial structure, the bonding pad structure is located on the passivation layer and is electrically connected with the electrode structure through the passivation layer. The LEDs manufactured by the structure are connected in series, and in the process of testing the volume production needle bed, the pins are usually required to be inserted into the bonding pads of the head and tail 2 LEDs, and the test pins are easy to be inserted into the wrong bonding pad positions, so that the test voltage data are poor. Disclosure of Invention The embodiment of the disclosure provides a light emitting diode and a manufacturing method thereof, which can prevent a test needle from being easily pricked at an incorrect bonding pad position in the process of the light emitting diode needle insertion test, and improve the yield of test voltage data. The technical scheme is as follows: in one aspect, there is provided a light emitting diode including: A plurality of epitaxial structures, a first set of pads, and a second set of pads in series; The first bonding pad group comprises a plurality of bonding pads; the bonding pads of the first bonding pad group are connected through a first connecting part, and the bonding pads of the second bonding pad group are connected through a second connecting part; The width of the first connecting portion is smaller than the width of the bonding pad of the first bonding pad group, and the width of the second connecting portion is smaller than the width of the bonding pad of the second bonding pad group. Optionally, the light emitting diode further comprises a third insulating layer; the third insulating layer is positioned between the first bonding pad group and the plurality of epitaxial structures connected in series, and the third insulating layer is positioned between the second bonding pad group and the plurality of epitaxial structures connected in series; the third insulating layer is provided with a through hole; of the plurality of pads of the first pad group, only one of the pads is connected to one of the plurality of tandem epitaxial structures through a via of the third insulating layer; of the plurality of pads of the second pad group, only one of the pads is connected to another one of the plurality of tandem epitaxial structures through a via of the third insulating layer. Optionally, the thickness of the third insulating layer is 20000-30000 angstroms. Optionally, the widths of the first connection portion and the second connection portion are 18-22 μm respectively. Optionally, the lengths of the first connection portion and the second connection portion are 190-210 μm respectively. Optionally, each of the first pad group and the second pad group includes 2 of the pads. Optionally, the first bonding pad group and the second bonding pad group are correspondingly arranged in 2 rows. In another aspect, a method for manufacturing a light emitting diode is provided, the method comprising: manufacturing a plurality of epitaxial structures connected in series; The method comprises the steps of manufacturing a first bonding pad group and a second bonding pad group, wherein the first bonding pad group comprises a plurality of bonding pads, the bonding pads of the first bonding pad group are connected through a first connecting part, the bonding pads of the second bonding pad group are connected through a second connecting part, the width of the first connecting part is smaller than that of the bonding pads of the first bonding pad group, and the width of the second connecting part is smaller than that of the bonding pads of the second bonding pad group. Optionally, the widths of the first connection portion and the second connection portion are 18-22 μm respectively. Optionally, the lengths of the first connection portion and the second connection portion are 190-210 μm respectively. The technical scheme provided by the embodiment of the disclosure has the beneficial effects that: In the embodiment of the disclosure, the light emitting diode comprises a plurality of epitaxial structures connected in series, a first bonding pad group and a second bonding pad group, wherein the