CN-122002989-A - Integrated chip and preparation method thereof

CN122002989ACN 122002989 ACN122002989 ACN 122002989ACN-122002989-A

Abstract

The invention relates to the technical field of semiconductors, in particular to an integrated chip and a preparation method thereof, wherein the integrated chip comprises a plurality of monochromatic luminophors, positive electrodes and negative electrodes, N-type semiconductor layers of all luminophors are connected to form a common cathode structure, the integrated chip is used as one pixel of a display screen, or the integrated chip is connected with a drive IC in an aligned manner to obtain integrated light-emitting modules, the light-emitting modules are distributed in an array manner and used for image display, in the preparation method of the integrated chip, an epitaxial material in a wafer substrate is etched, the N-type semiconductor layers in the epitaxial material are subjected to secondary etching to obtain a plurality of integrated areas, each integrated area comprises at least three lugs, the N-type semiconductor layers at the bottoms of the lugs in the same integrated area are connected to form the common cathode structure, and under the structure, one negative electrode is arranged in the same integrated chip, so that the occupied space of the electrodes is reduced, the further reduction of the size of the luminophors is facilitated, and the integration degree of the integrated chip is improved.

Inventors

GUO WENPING
LIU TONGJUN
DENG QUNXIONG
HAN KUI
WANG SHUNRONG

Assignees

元旭半导体科技(无锡)有限公司

Dates

Publication Date: 20260508
Application Date: 20260312

Claims (10)

1. An integrated chip, the integrated chip comprising: The light-emitting device comprises a plurality of monochromatic light-emitting bodies (1), wherein each light-emitting body (1) comprises an N-type semiconductor layer (101), a light-emitting layer (102) and a P-type semiconductor layer (103) which are distributed in a laminated manner, the N-type semiconductor layers (101) are connected to form a common cathode structure, the bottom of the N-type semiconductor layer (101) of each light-emitting body (1) is continuous and is a coherent area, and at least one side of the coherent area protrudes outwards to form a step; The positive electrode (2) and the negative electrode (3), the negative electrode (3) is positioned on the step and electrically connected with the N-type semiconductor layer (101), and the positive electrode (2) is positioned on the P-type semiconductor layer (103) and electrically connected with the P-type semiconductor layer (103).
2. The integrated chip according to claim 1, wherein the light color of the light emitters (1) comprises blue, green or red, and each integrated chip comprises at least three light emitters (1), and the light emitters (1) are distributed in parallel at intervals, or distributed in a triangle shape, or distributed in a quadrilateral shape.
3. Integrated chip according to claim 1 or 2, characterized in that it further comprises a current spreading layer (104) and/or an ohmic contact layer (106), said current spreading layer (104) being located at the surface of said P-type semiconductor layer (103) for electrically connecting said positive electrode (2) with said P-type semiconductor layer (103), said ohmic contact layer (106) being located between said negative electrode (3) and said N-type semiconductor layer (101) for realizing ohmic contact of said negative electrode (3) with said N-type semiconductor layer (101).
4. The integrated chip of claim 3, further comprising an insulating layer or a composite layer (105), wherein the insulating layer or the composite layer (105) covers the whole surface including the surface of the N-type semiconductor layer and the surface of the P-type semiconductor layer, the composite layer comprises two insulating layers and a reflecting layer distributed between the two insulating layers, the reflecting layer is used for reflecting light, the bottom end of the positive electrode (2) penetrates through the insulating layer or the composite layer (105) and is electrically connected with the P-type semiconductor layer (103), and the bottom end of the negative electrode (3) penetrates through the insulating layer or the composite layer (105) and is electrically connected with the N-type semiconductor layer (101).
5. The integrated chip of claim 4, further comprising a color film disposed on a light emitting surface of the light emitter (1) in the integrated chip, for converting a light color of the light emitter (1).
6. The integrated chip according to claim 5, wherein the color film comprises a contrast enhancement layer (501) and a light color conversion region (502), the contrast enhancement layer (501) is configured to enhance display contrast, and the light color conversion region (502) is located in a gap between two adjacent contrast enhancement layers (501) and is in one-to-one correspondence with the light emitters (1) and is configured to convert light colors of the light emitters (1) into other colors.
7. A method for manufacturing an integrated chip for manufacturing the integrated chip according to claim 1, comprising: Providing a wafer, wherein the wafer comprises a substrate and epitaxial materials distributed on the substrate, and the epitaxial materials comprise N-type semiconductor materials, luminescent materials and P-type semiconductor materials which are distributed in a laminated manner; Etching the epitaxial material to the depth of the surface of the N-type semiconductor material or the inside of the N-type semiconductor material, wherein the etching is one-time etching, a plurality of lugs distributed in an array are obtained, the lugs comprise P-type semiconductor layers, luminescent layers and N-type semiconductor layers which are distributed in a laminated manner, and the N-type semiconductor layers are continuous; Performing secondary etching on the N-type semiconductor layer to obtain a plurality of integrated areas, wherein each integrated area comprises at least three protruding blocks, the N-type semiconductor layer in the same integrated area continuously forms a coherent area to obtain a common cathode structure, and at least one side of the coherent area protrudes to form a step; And preparing a positive electrode above the bump, preparing a negative electrode above the step, wherein the positive electrode is electrically connected with the P-type semiconductor layer, and the negative electrode is electrically connected with the N-type semiconductor layer.
8. The method of claim 7, wherein the first etching and the second etching each use a photolithography process.
9. The method for manufacturing an integrated chip according to claim 7 or 8, wherein a current spreading material is deposited on the surface of the P-type semiconductor material before the first etching, the current spreading material and the epitaxial material are sequentially etched by a photolithography etching process to form a current spreading layer and the bump, an insulating material or a composite material is deposited on the whole surface including the surface of the current spreading layer before the second etching to form an insulating layer or a composite layer, and the second etching is performed by the photolithography etching process based on a gap between the bumps to etch the depth to the surface of the substrate to obtain an integrated region including the insulating layer or the composite layer.
10. The method for manufacturing an integrated chip according to claim 7, wherein the method for manufacturing a color integrated chip comprises: Transferring a plurality of integrated chips to a temporary substrate, wherein electrodes of the integrated chips correspond to the temporary substrate, and a light emitting surface of a luminous body in the integrated chips is far away from the temporary substrate; A semiconductor process or a film pasting process is adopted, a color film is arranged on the surface of the light emitting surface of the luminous body, and the color film is used for converting the light color of the luminous body; arranging a light-transmitting substrate on the surface of the color film; Removing the temporary substrate; And cutting based on gaps among the integrated chips to obtain the color integrated chips.

Description

Integrated chip and preparation method thereof Technical Field The invention relates to the technical field of light-emitting chips, in particular to an integrated chip and a preparation method thereof. Background In the technical field of Micro LED display, an integrated chip is a core component for realizing high-density pixels and improving display performance, and is generally formed by arranging and combining a plurality of luminous bodies in a specific structure. In the existing integrated chip, a positive electrode and a negative electrode are arranged in each illuminant, and for the illuminant with a flip-chip structure, the positive electrode and the negative electrode are positioned on the same side of the same illuminant, so that more space is occupied, the further reduction of the size of the illuminant is not facilitated, and the improvement of the integration level of the integrated chip is influenced. Disclosure of Invention In view of the foregoing drawbacks of the prior art, an object of the present application is to provide an integrated chip, which is beneficial to further downsizing of the light emitting body and can improve the integration level. The technical scheme adopted by the application is as follows: an integrated chip, the integrated chip comprising: The light-emitting device comprises a plurality of monochromatic light-emitting bodies, a plurality of luminous bodies and a plurality of luminous units, wherein each light-emitting body comprises N-type semiconductor layers, light-emitting layers and P-type semiconductor layers which are distributed in a laminated mode, the N-type semiconductor layers are connected to form a common cathode structure, the bottoms of the N-type semiconductor layers of the light-emitting bodies are continuous and are coherent areas, and at least one side of each coherent area protrudes outwards to form a step; The positive electrode is positioned on the step and is electrically connected with the N-type semiconductor layer, and the positive electrode is positioned on the P-type semiconductor layer and is electrically connected with the P-type semiconductor layer. It is further characterized in that, The size of the luminous body is less than or equal to 100 mu m. Still further, the light emitters include, but are not limited to, mini LEDs or Micro LEDs. Further, the light color of the light emitter includes, but is not limited to, blue, green or red. Further, each integrated chip comprises at least three light emitters, and the light emitters are distributed in parallel at intervals, or distributed in a triangular shape, or distributed in a quadrilateral shape. Still further, it still includes electric current extension layer, ohmic contact layer, electric current extension layer is located the P type semiconductor layer surface is used for with positive electrode with P type semiconductor layer electricity is connected, ohmic contact layer is located the negative electrode with N type semiconductor layer is between, is used for realizing the ohmic contact of negative electrode with N type semiconductor layer. Still further, it still includes insulating layer or composite layer, insulating layer or composite layer cover in including N type semiconductor layer surface, the whole face on P type semiconductor layer surface, the composite layer includes two-layer insulating layer, distributes in the reflection stratum between two-layer insulating layer, the reflection stratum is used for light reflection, the bottom of positive electrode runs through behind insulating layer or the composite layer, with P type semiconductor layer electricity is connected, the bottom of negative electrode runs through behind insulating layer or the composite layer, with N type semiconductor layer electricity is connected. A color integrated chip is characterized by comprising the integrated chip and a color film, wherein the color film is arranged on the surface of a light emitting surface of a luminous body in the integrated chip and is used for converting the light color of the luminous body. The color film is further characterized by comprising a contrast enhancement layer and a light color conversion area, wherein the contrast enhancement layer is used for enhancing display contrast, and the light color conversion area is positioned in a gap between two adjacent contrast enhancement layers and corresponds to the luminous bodies one by one and is used for converting light colors of the luminous bodies into other colors. The LED light-emitting module is further characterized in that each light-emitting module comprises N integrated chips, N is an integer greater than or equal to 1, and when N is greater than or equal to 2, the integrated chips in the same light-emitting module are distributed in an array. Further, the light emitting body in the integrated chip is connected with the driving IC in an alignment mode. The display screen comprises a plurality of integrated ch