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CN-122002990-A - Light-emitting chip and preparation method thereof

CN122002990ACN 122002990 ACN122002990 ACN 122002990ACN-122002990-A

Abstract

The present disclosure provides a light emitting chip and a method of manufacturing the same. The light-emitting chip comprises a protective layer, a first filling layer, a shading layer, a plurality of light-emitting diode chips and a transparent packaging plate, wherein the light-emitting diode chips are arranged at intervals, the shading layer is filled between adjacent light-emitting diode chips and at the periphery of the light-emitting diode chips, the first filling layer and the protective layer are sequentially positioned on the surface of the shading layer and on the light emitting side of the light-emitting diode chips, the first filling layer and the protective layer are provided with light-transmitting windows, each light-transmitting window exposes one light-emitting diode chip, and the packaging plate is positioned on one side of the protective layer, far from the first filling layer, and can prevent light crosstalk between the light-emitting diodes.

Inventors

  • WANG XINGFA
  • TANG MIAO
  • WANG NING
  • LI JIALIANG

Assignees

  • 京东方华灿光电(广东)有限公司

Dates

Publication Date
20260508
Application Date
20251224

Claims (10)

  1. 1. A light emitting chip, characterized in that the light emitting chip comprises a protective layer (10), a first filling layer (20), a light shielding layer (30), a plurality of light emitting diode chips (40) and a transparent package plate (50); The light-emitting diode chips (40) are arranged at intervals, and the light-shielding layer (30) is filled between the adjacent light-emitting diode chips (40) and at the periphery of the light-emitting diode chips (40); The first filling layer (20) and the protective layer (10) are sequentially positioned on the surface of the shading layer (30) and positioned on the light emitting side of the light emitting diode chip (40), light transmission windows (1001) are formed in the first filling layer (20) and the protective layer (10), and each light transmission window (1001) exposes one light emitting diode chip (40); The encapsulation plate (50) is located on the side of the protective layer (10) remote from the first filling layer (20).
  2. 2. The light emitting chip according to claim 1, characterized in that a side of the light emitting diode chip (40) close to the package plate (50) is flush with a side of the first filling layer (20) remote from the package plate (50).
  3. 3. The light emitting chip according to claim 2, wherein the thickness of the light shielding layer (30) is not smaller than the thickness of the light emitting diode chip (40).
  4. 4. A light emitting chip according to any one of claims 1 to 3, characterized in that the cross section of the light-transmitting window (1001) perpendicular to the package plate (50) is a positive trapezoid comprising a longer first base and a shorter second base, which second base is close to the light emitting diode chip (40) with respect to the first base.
  5. 5. The light emitting chip of claim 4, wherein the light emitting surface of the light emitting diode chip is in front projection on the surface of the package plate (50), and the opening of the light transmitting window (1001) near the light emitting diode chip (40) is in front projection on the surface of the package plate (50).
  6. 6. The light emitting chip according to claim 1, wherein the protective layer (10) is a SiO film layer, a SiN film layer or a SiO and SiN composite film layer.
  7. 7. The light emitting chip according to any one of claims 1 to 6, further comprising a second filler layer (60) and a first wiring layer (70); The second filling layer (60) covers one side of the light shielding layer (30) away from the package board (50) and the back surface of the light emitting diode chip (40); the first circuit layer (70) is located on the second filling layer (60), and the first circuit layer (70) penetrates through the second filling layer (60) to be electrically connected with the light-emitting diode chip (40).
  8. 8. A method of manufacturing a light emitting chip, the method comprising: forming a receiving adhesive layer on the receiving substrate, wherein the surface of the receiving substrate is provided with a plurality of bumps which are arranged at intervals, and the receiving adhesive layer covers the surface of the receiving substrate, which is provided with the bumps; Forming a protective layer, wherein the protective layer covers the surface of the adhesive carrying layer; patterning the protective layer to form through holes corresponding to the plurality of bumps; transferring a plurality of light emitting diode chips onto the receiving adhesive layer, wherein one light emitting diode chip is carried by one convex block; manufacturing a first filling layer on the protective layer, wherein the first filling layer is positioned among the plurality of bumps; Manufacturing a shading layer on the first filling layer, wherein the shading layer is positioned among the light emitting diode chips; removing the bearing substrate to obtain a light-emitting diode chip integrated structure; And packaging the light-emitting diode chip integrated structure by adopting a transparent packaging plate, wherein the transparent packaging plate is positioned at one side of the protective layer, which is far away from the first filling layer.
  9. 9. The method of manufacturing according to claim 8, further comprising: forming a photoresist mask on the surface of the substrate through a photolithography process; And etching the substrate under the shielding of the photoresist mask to form the plurality of bumps, thereby obtaining the receiving substrate.
  10. 10. The method of claim 8 or 9, wherein the receiving glue layer is a pyrolytic glue layer or a photolytic glue layer.

Description

Light-emitting chip and preparation method thereof Technical Field The disclosure relates to the field of light emitting devices, and in particular relates to a light emitting chip and a preparation method thereof. Background Light emitting diodes (LIGHT EMITTING Diode, LED) are widely used in the fields of display screens, lamps, illumination and the like due to the advantages of low power consumption, small size, high reliability and the like, and along with the continuous maturation of mass transfer technologies, light emitting chips packaged by adopting the light emitting diodes are also rapidly developing. The related art provides a light emitting chip including a light shielding layer, a plurality of light emitting diode chips, and a package board. The light-emitting diode chips are arranged at intervals, the shading layers are filled between the adjacent light-emitting diode chips and at the periphery of the light-emitting diode chips, and the packaging plate is positioned on the light-emitting surface of the light-emitting diode chips. In the light emitting chip, the problem of light crosstalk easily occurs between adjacent light emitting diode chips. Disclosure of Invention The embodiment of the disclosure provides a light emitting chip and a preparation method thereof, which can reduce light crosstalk between adjacent light emitting diode chips. The technical scheme is as follows: in one aspect, there is provided a light emitting chip including: The LED packaging structure comprises a protective layer, a first filling layer, a shading layer, a plurality of LED chips and a transparent packaging plate; the light-emitting diode chips are arranged at intervals, and the shading layers are filled between the adjacent light-emitting diode chips and at the periphery of the light-emitting diode chips; The first filling layer and the protective layer are sequentially positioned on the surface of the shading layer and on the light emitting side of the light emitting diode chip, and light transmission windows are arranged in the first filling layer and the protective layer, and each light transmission window exposes one light emitting diode chip; The packaging plate is located on one side, away from the first filling layer, of the protection layer. Optionally, a surface of the light emitting diode chip close to the package board is flush with a surface of the first filling layer away from the package board. Optionally, the thickness of the light shielding layer is not smaller than the thickness of the light emitting diode chip. Optionally, the cross section of the light-transmitting window perpendicular to the packaging plate is a positive trapezoid, and the positive trapezoid includes a longer first bottom edge and a shorter second bottom edge, and the second bottom edge is close to the light-emitting diode chip relative to the first bottom edge. Optionally, the light emitting surface of the light emitting diode chip is projected on the surface of the packaging plate, and the opening, close to the light emitting diode chip, of the light transmitting window is positioned in the front projection of the surface of the packaging plate. Optionally, the protective layer is a SiO film layer, a SiN film layer or a SiO and SiN composite film layer. Optionally, the light emitting chip further comprises a second filling layer and a first circuit layer; The second filling layer covers one side of the shading layer far away from the packaging plate and the back surface of the light-emitting diode chip; the first circuit layer is located on the second filling layer, and the first circuit layer penetrates through the second filling layer to be electrically connected with the light-emitting diode chip. On the other hand, the preparation method of the light-emitting chip comprises the steps of forming a receiving adhesive layer on a receiving substrate, wherein a plurality of bumps are arranged on the surface of the receiving substrate at intervals, and the receiving adhesive layer covers the surface of the receiving substrate, on which the bumps are arranged; Forming a protective layer, wherein the protective layer covers the surface of the adhesive carrying layer; patterning the protective layer to form through holes corresponding to the plurality of bumps; transferring a plurality of light emitting diode chips onto the receiving adhesive layer, wherein one light emitting diode chip is carried by one convex block; manufacturing a first filling layer on the protective layer, wherein the first filling layer is positioned among the plurality of bumps; Manufacturing a shading layer on the first filling layer, wherein the shading layer is positioned among the light emitting diode chips; removing the bearing substrate to obtain a light-emitting diode chip integrated structure; And packaging the light-emitting diode chip integrated structure by adopting a transparent packaging plate, wherein the transparent packaging plate is pos