CN-122002995-A - Micro light emitting diode array, manufacturing method thereof, display device and electronic equipment

Abstract

The application discloses a micro light emitting diode array, a preparation method thereof, a display device and electronic equipment, and belongs to the technical field of display. The substrate of the micro light emitting diode array comprises at least two element areas, wherein a micro light emitting diode and at least one electrode unit are formed in each element area, and the electrode units and the micro light emitting diodes are manufactured by the same process. The micro light emitting diode comprises a first doped semiconductor layer, an active layer, a second doped semiconductor layer and a first electrode, wherein the electrode unit is electrically connected with the first doped semiconductor layer in the micro light emitting diode, so that independent control of the micro light emitting diode is realized. In the micro light emitting diode array, the first electrode and the electrode unit of each micro light emitting diode form a group of electrodes, each group of electrodes can be controlled independently, and the electrode units manufactured by the same process are equal to the micro light emitting diodes in height, so that the subsequent electric connection with a driving circuit is facilitated.

Inventors

• ZHANG LIANG
• JIANG SHANGHONG
• ZHANG RUNAN
• CHEN SHULIN
• ZHANG SHUMING
• YUAN ZE

Assignees

• 甬江实验室

Dates

Publication Date

20260508

Application Date

20241101

Claims (16)

1. 1. A micro light emitting diode array comprising: A substrate including at least two element regions thereon; Forming a micro light emitting diode and at least one electrode unit in each element region; The electrode unit and the micro light emitting diode are manufactured by adopting the same process; The micro light emitting diode comprises a first doped semiconductor layer, an active layer, a second doped semiconductor layer and a first electrode; the electrode unit is electrically connected with the first doped semiconductor layer in the micro light emitting diode to realize independent control of the micro light emitting diode.
2. 2. The micro light emitting diode array according to claim 1, wherein the electrode unit includes an auxiliary active layer, an auxiliary second doped semiconductor layer, and a second electrode sequentially formed over the first doped semiconductor layer; Each element region further comprises an auxiliary metal layer, wherein a first end of the auxiliary metal layer is electrically connected with the second electrode, and a second end of the auxiliary metal layer is electrically connected with the first doped semiconductor layer.
3. 3. The array of micro light emitting diodes of claim 2, wherein the second electrode is formed in the same process step as the first electrode, the second electrode being of equal height and thickness as the first electrode.
4. 4. The array of micro light emitting diodes of claim 3, further comprising a conductive layer between the second doped semiconductor layer and the first electrode; the electrode unit further comprises an auxiliary conductive layer, wherein the auxiliary conductive layer is positioned between the auxiliary second doped semiconductor layer and the second electrode, and a first end of the auxiliary metal layer covers part of the auxiliary conductive layer and is electrically connected with the second electrode through the auxiliary conductive layer; the conductive layer and the auxiliary conductive layer are formed in the same process step.
5. 5. The array of micro light emitting diodes of claim 4, wherein the conductive layer and the auxiliary conductive layer are both indium tin oxide layers.
6. 6. The array of claim 1, wherein a spacer is disposed between the first doped semiconductor layers of adjacent ones of the element regions, the spacer being at least one of a trench region, an ion implantation region, and a passivation layer.
7. 7. A method for manufacturing a micro light emitting diode array, comprising: providing a substrate, wherein the substrate comprises at least two element areas; Forming a micro light emitting diode and at least one electrode unit in each element region, the step of forming a micro light emitting diode comprising: Sequentially forming a first doped semiconductor layer, an active layer, a second doped semiconductor layer and a first electrode on the substrate; The electrode unit is electrically connected with the first doped semiconductor layer in the micro light emitting diode, so that independent control of the micro light emitting diode is realized.
8. 8. The method of manufacturing according to claim 7, wherein the electrode unit includes an auxiliary active layer, an auxiliary second doped semiconductor layer, and a second electrode sequentially formed over the first doped semiconductor layer; The at least one electrode unit is formed synchronously in the step of forming a micro light emitting diode, and comprises the following steps: sequentially forming the first doped semiconductor layer, the basic active layer and the basic second doped semiconductor layer on the substrate; removing a portion of the base second doped semiconductor layer to form separate second doped semiconductor layer and auxiliary second doped semiconductor layer, the second doped semiconductor layer and the auxiliary second doped semiconductor layer having equal layer thicknesses; removing a portion of the base active layer to form the separated active layer and auxiliary active layer, and exposing a portion of the first doped semiconductor layer; and forming the first electrode and the second electrode in the same process, wherein the first electrode is positioned on the second doped semiconductor layer, the second electrode is positioned on the auxiliary second doped semiconductor layer, and the thicknesses of the first electrode and the second electrode are equal.
9. 9. The method of manufacturing according to claim 8, further comprising: an auxiliary metal layer is formed, a first end of the auxiliary metal layer is electrically connected with the second electrode, and a second end of the auxiliary metal layer is electrically connected with the first doped semiconductor layer.
10. 10. The method of claim 9, wherein the step of simultaneously forming the at least one electrode unit in the step of forming a micro light emitting diode before removing a portion of the base second doped semiconductor layer further comprises: forming a base conductive layer on the base second doped semiconductor layer; And removing part of the basic conductive layer to form a separated conductive layer and an auxiliary conductive layer, wherein the thickness of the conductive layer is the same as that of the auxiliary conductive layer, the conductive layer is positioned above the second doped semiconductor layer, the auxiliary conductive layer is positioned above the auxiliary second doped semiconductor layer, the first electrode is positioned above the conductive layer, and the second electrode is positioned above the auxiliary conductive layer.
11. 11. The method of claim 9, wherein after forming the separated second doped semiconductor layer and the auxiliary second doped semiconductor layer, forming a conductive layer and an auxiliary conductive layer using the same photolithography process, wherein the conductive layer is over the second doped semiconductor layer, the auxiliary conductive layer is over the auxiliary second doped semiconductor layer, the first electrode is over the conductive layer, and the second electrode is over the auxiliary conductive layer.
12. 12. The method of manufacturing according to claim 10 or 11, wherein forming the auxiliary metal layer includes forming a first end of the auxiliary metal layer to cover a portion of the auxiliary conductive layer; Forming the second electrode includes electrically connecting the second electrode with the auxiliary metal layer through the auxiliary conductive layer.
13. 13. The method of manufacturing according to claim 12, wherein a spacer is formed between the first doped semiconductor layers of the adjacent element regions, the spacer being at least one of a trench region, an ion implantation region, and a passivation layer.
14. 14. The method of manufacturing according to claim 13, wherein the spacer is formed after the first electrode and the second electrode are formed; or forming the spacer after forming the auxiliary metal layer and before forming the first electrode and the second electrode; and forming the spacing region before forming the auxiliary metal layer.
15. 15. A display device comprising the micro light emitting diode array of any one of claims 1 to 6, and a microlens covering at least the micro light emitting diode.
16. 16. An electronic device comprising the display device according to claim 15.

Description

Micro light emitting diode array, manufacturing method thereof, display device and electronic equipment Technical Field The application belongs to the technical field of display, and particularly relates to a micro light emitting diode array, a preparation method thereof, a display device and electronic equipment. Background The micro light emitting diode array is considered as an optimal augmented reality (Augmented Reality, AR) display lighting scheme in the industry because of the performance advantages of high brightness, low energy consumption, rapid reaction time, high contrast, high resolution, color saturation and the like, and the micro light emitting diode array at present usually adopts a common N electrode form by a plurality of micro light emitting diode elements or needs to realize independent connection of the N electrode and the CMOS driving circuit by means of complicated processes such as secondary bonding of a temporary substrate, removal of an epitaxial growth substrate and the like. Under the connection mode of the common N electrode and the CMOS driving circuit, the N-type current mirror is not allowed, or the driving circuit based on the N-type MOS tube is adopted in the design of the CMOS driving circuit. In addition, as all pixel point units in the Micro-LED array adopt a common N electrode, single pixel points can be independently controlled only through the voltage of a P electrode end, and a certain limitation is caused on a cross-voltage range. Disclosure of Invention The application provides a micro light emitting diode array, a preparation method thereof, a display device and electronic equipment, and aims to realize that electrodes at two ends of each micro light emitting diode element in the micro light emitting diode array can be independently controlled. In a first aspect, the present application provides a micro light emitting diode array, including a substrate, where the substrate includes at least two element regions, and a micro light emitting diode and at least one electrode unit are formed in each element region, where the electrode unit and the micro light emitting diode are manufactured by the same process. The micro light emitting diode comprises a first doped semiconductor layer, an active layer, a second doped semiconductor layer and a first electrode, wherein the electrode unit is electrically connected with the first doped semiconductor layer in the micro light emitting diode, so that independent control of the micro light emitting diode is realized. In some embodiments, the electrode unit includes an auxiliary active layer, an auxiliary second doped semiconductor layer, and a second electrode sequentially formed over the first doped semiconductor layer, an auxiliary metal layer is further included in each element region, a first end of the auxiliary metal layer is electrically connected to the second electrode, and a second end of the auxiliary metal layer is electrically connected to the first doped semiconductor layer. In some embodiments, the second electrode is formed in the same process step as the first electrode, the second electrode being equal in height and equal in thickness to the first electrode. In some embodiments, the micro light emitting diode further comprises a conductive layer located between the second doped semiconductor layer and the first electrode. The electrode unit further includes an auxiliary conductive layer between the auxiliary second doped semiconductor layer and the second electrode. The first end of the auxiliary metal layer covers part of the auxiliary conductive layer and is electrically connected with the second electrode through the auxiliary conductive layer. Wherein the conductive layer and the auxiliary conductive layer are formed in the same process step. In some embodiments, the conductive layer and the auxiliary conductive layer are both indium tin oxide layers. In some embodiments, a spacer is disposed between the first doped semiconductor layers of adjacent element regions, the spacer being at least one of a trench region, an ion implantation region, and a passivation layer. In the embodiment of the application, in each element area, the first electrode and the electrode unit of each micro light emitting diode are respectively used as two ends of a group of electrodes of the micro light emitting diode, and each group of electrodes can be respectively and independently controlled, so that the micro light emitting diode in each element area can be independently controlled, the application scene of the micro light emitting diode array is expanded, the cross-voltage range of a single micro light emitting diode element is expanded, and the display brightness is favorably improved. The electrode unit and the micro light emitting diode are manufactured by adopting the same process, so that the electrode unit and the micro light emitting diode have the same height, namely, the height of the upper surface of the first elec