CN-122003001-A - Light emitting diode and preparation method thereof

Abstract

The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode comprises a first epitaxial structure, a second epitaxial structure, a connecting electrode, an insulating structure, a first silver mirror structure and a second silver mirror structure, wherein the first epitaxial structure is connected with the second epitaxial structure in series through the connecting electrode, the insulating structure comprises a first insulating reflecting layer and a second insulating reflecting layer, the first insulating reflecting layer covers the first epitaxial structure, the second epitaxial structure and the connecting electrode, the first silver mirror structure and the second silver mirror structure are located on the first insulating reflecting layer and correspond to the first epitaxial structure and the second epitaxial structure respectively, the second insulating reflecting layer covers the first insulating reflecting layer, the first silver mirror structure and the second silver mirror structure, and the sum of the areas of the first silver mirror structure and the second silver mirror structure is 32000-34000 mu m 2 .

Inventors

• FU XINJUN
• ZHAO SHIJIA
• GUO ZEWEN
• YING DANQING
• XIA ZHANGGEN
• LIU CHUANGUI
• GAO YANLONG
• WANG HUINING

Assignees

• 京东方华灿光电(浙江)有限公司

Dates

Publication Date

20260508

Application Date

20251217

Claims (10)

1. 1. A light emitting diode, characterized in that the light emitting diode comprises a first epitaxial structure (11), a second epitaxial structure (12), a connecting electrode (30), an insulating structure (50), a first silver mirror structure (61) and a second silver mirror structure (62); the first epitaxial structure (11) is connected in series with the second epitaxial structure (12) through the connecting electrode (30); The insulating structure (50) comprises a first insulating reflecting layer (51) and a second insulating reflecting layer (52), wherein the first insulating reflecting layer (51) covers the first epitaxial structure (11), the second epitaxial structure (12) and the connecting electrode (30), the first silver mirror structure (61) and the second silver mirror structure (62) are positioned on the first insulating reflecting layer (51) and correspond to the first epitaxial structure (11) and the second epitaxial structure (12) respectively, and the second insulating reflecting layer (52) covers the first insulating reflecting layer (51), the first silver mirror structure (61) and the second silver mirror structure (62); The sum of the areas of the first silver mirror structure (61) and the second silver mirror structure (62) is 32000-34000 mu m 2 .
2. 2. The light emitting diode of claim 1, wherein the first epitaxial structure (11) comprises a first step structure (1001), the first step structure (1001) comprises a first step bottom surface and a first step top surface, the second epitaxial structure (12) comprises a second step structure (1002), the second step structure (1002) comprises a second step bottom surface and a second step top surface, and a groove (1003) is provided between the first epitaxial structure (11) and the second epitaxial structure (12); The projection of the first silver mirror structure (61) on the plane of the first step top surface is positioned in the first step top surface, and the projection of the second silver mirror structure (62) on the plane of the second step top surface is positioned in the second step top surface; The distance between the projected edge of the first silver mirror structure (61) and the edge of the first step top surface is less than a threshold value, and the distance between the projected edge of the second silver mirror structure (62) and the edge of the second step top surface is less than the threshold value.
3. 3. The light emitting diode according to claim 2, wherein a distance between an edge of the projection of the first silver mirror structure (61) and an edge of the first step top surface is 7-9 μm; the distance between the projected edge of the second silver mirror structure (62) and the edge of the second step top surface is 7-9 μm.
4. 4. A light emitting diode according to claim 2 or 3, characterized in that the light emitting diode further comprises a first electrode (41); the first electrode (41) is positioned on the top surface of the first step; the surface of the first insulating reflecting layer (51) is flush with the surface of the first electrode (41), the first insulating reflecting layer (51) is provided with a first through hole (2001), and the first electrode (41) is positioned in the first through hole (2001).
5. 5. The light emitting diode according to claim 4, characterized in that the first silver mirror structure (61) is at least partially located on an area of the first insulating reflective layer (51) which is flush with the surface of the first electrode (41).
6. 6. The light emitting diode according to claim 4, wherein the first silver mirror structure (61) is provided with a second through hole (2002), and a distance between an edge of the second through hole (2002) and an edge of the first through hole (2001) is 1-2 μm.
7. 7. A light emitting diode according to any one of claims 1 to 3, wherein the first insulating reflective layer (51) is a DBR layer and the second insulating reflective layer (52) is a DBR layer or a SiO2 layer.
8. 8. A light emitting diode according to any one of claims 1 to 3, wherein the thickness of the first insulating reflective layer (51) is 0.8 to 1 μm and the thickness of the second insulating reflective layer (52) is 0.5 to 1.2 μm.
9. 9. A method of manufacturing a light emitting diode, the method comprising: manufacturing a first epitaxial structure and a second epitaxial structure; Manufacturing a connecting electrode, wherein the first epitaxial structure is connected with the second epitaxial structure in series through the connecting electrode; Manufacturing a first insulating reflection layer, wherein the first insulating reflection layer covers the first epitaxial structure, the second epitaxial structure and the connecting electrode; Manufacturing a first silver mirror structure and a second silver mirror structure, wherein the first silver mirror structure and the second silver mirror structure are positioned on the first insulating reflecting layer and respectively correspond to the first epitaxial structure and the second epitaxial structure, and the sum of the areas of the first silver mirror structure and the second silver mirror structure is 32000-34000 mu m 2 ; and manufacturing a second insulating reflecting layer, wherein the second insulating reflecting layer covers the first insulating reflecting layer, the first silver mirror structure and the second silver mirror structure.
10. 10. The method of claim 9, wherein the first epitaxial structure comprises a first step structure comprising a first step bottom surface and a first step top surface, wherein the second epitaxial structure comprises a second step structure comprising a second step bottom surface and a second step top surface, and wherein a groove is provided between the first epitaxial structure and the second epitaxial structure; The projection of the first silver mirror structure on the plane of the first step top surface is positioned in the first step top surface, and the projection of the second silver mirror structure on the plane of the second step top surface is positioned in the second step top surface; The distance between the projected edge of the first silver mirror structure and the edge of the first step top surface is less than a threshold value, and the distance between the projected edge of the second silver mirror structure and the edge of the second step top surface is less than the threshold value.

Description

Light emitting diode and preparation method thereof Technical Field The present disclosure relates to the field of light emitting devices, and in particular, to a light emitting diode and a method for manufacturing the same. Background A light emitting Diode (LIGHT EMITTING Diode, LED) is a semiconductor device capable of emitting light, has advantages of energy saving, high brightness, high durability, long life, light weight, and the like, and has been widely used in fields of illumination, display, and the like. The related art provides a light emitting diode structure including an epitaxial structure, an insulating structure, a silver mirror structure, and an electrode structure. The silver mirror structure is located on the first insulating layer, the second insulating layer covers the silver mirror structure and the first insulating layer, the electrode structure comprises an N electrode and a P electrode, the N electrode and the P electrode are electrically connected with the epitaxial structure through the insulating layer and the silver mirror structure, and at the moment, through holes corresponding to the N electrode and the P electrode are formed in the silver mirror structure. Because the through holes corresponding to the N electrode and the P electrode are required to be formed on the silver mirror structure, the area of the silver mirror structure is too small, the light reflection is affected, and the brightness of the light-emitting diode is further affected. Disclosure of Invention The embodiment of the disclosure provides a light-emitting diode and a preparation method thereof, which can improve the area of a silver mirror structure and the brightness of the light-emitting diode. The technical scheme is as follows: In one aspect, a light emitting diode is provided that includes a first epitaxial structure, a second epitaxial structure, a connection electrode, an insulating structure, a first silver mirror structure, and a second silver mirror structure; The first epitaxial structure is connected with the second epitaxial structure in series through the connecting electrode; The insulating structure comprises a first insulating reflecting layer and a second insulating reflecting layer, and the first insulating reflecting layer covers the first epitaxial structure, the second epitaxial structure and the connecting electrode; the first silver mirror structure and the second silver mirror structure are positioned on the first insulating reflecting layer and correspond to the first epitaxial structure and the second epitaxial structure respectively; the second insulating reflecting layer covers the first insulating reflecting layer, the first silver mirror structure and the second silver mirror structure; The sum of the areas of the first silver mirror structure and the second silver mirror structure is 32000-34000 mu m 2. Optionally, the first epitaxial structure comprises a first step structure, wherein the first step structure comprises a first step bottom surface and a first step top surface, the second epitaxial structure comprises a second step structure, and the second step structure comprises a second step bottom surface and a second step top surface; The projection of the first silver mirror structure on the plane of the first step top surface is positioned in the first step top surface, and the projection of the second silver mirror structure on the plane of the second step top surface is positioned in the second step top surface; The distance between the projected edge of the first silver mirror structure and the edge of the first step top surface is less than a threshold value, and the distance between the projected edge of the second silver mirror structure and the edge of the second step top surface is less than the threshold value. Optionally, a distance between the projected edge of the first silver mirror structure and the edge of the top surface of the first step is 7-9 μm; The distance between the projected edge of the second silver mirror structure and the edge of the top surface of the second step is 7-9 mu m. Optionally, the light emitting diode further comprises a first electrode; The first electrode is positioned on the top surface of the first step; the surface of the first insulating reflecting layer is flush with the surface of the first electrode, the first insulating reflecting layer is provided with a first through hole, and the first electrode is positioned in the first through hole. Optionally, the first silver mirror structure is at least partially located on an area of the first insulating reflective layer that is flush with the first electrode surface. Optionally, the first silver mirror structure is provided with a second through hole, and the distance between the edge of the second through hole and the edge of the first through hole is 1-2 μm. Optionally, the first insulating reflective layer is a DBR layer, and the second insulating reflective layer is a