CN-122003002-A - Light-emitting chip, preparation method thereof and display substrate

Abstract

The embodiment of the disclosure provides a light-emitting chip, a preparation method thereof and a display substrate, relates to the technical field of display, and is used for improving the duty ratio of a light-emitting area in the light-emitting chip so as to improve the resolution of the display substrate. The light emitting chip comprises a light emitting unit and a color conversion unit arranged on the light emitting side of the light emitting unit, wherein the color conversion unit comprises a substrate and an optical function unit, the optical function unit is arranged on one side of the substrate, the optical function unit comprises a limiting dam and at least one optical function part, the limiting dam is used for limiting at least one first opening, one optical function part is arranged in one first opening, and an angle of an included angle formed between a plane of a side wall of the limiting dam, which is close to the first opening, and a plane of the substrate is smaller than an angle of an included angle formed between a plane of a side wall of the limiting dam, which is far away from the first opening, and a plane of the substrate. The display substrate is used for displaying images.

Inventors

• LI XIANG
• YANG SHAOPENG
• YAO QI
• HAN TIANYANG
• WANG MINGXING
• LIU XINHUA
• SHU SHI
• XU CHUANXIANG
• YU YONG
• YUE YANG
• LI SHAOHUI
• LI DUOHUI

Assignees

• 京东方科技集团股份有限公司

Dates

Publication Date

20260508

Application Date

20241101

Claims (20)

1. 1. A light emitting chip is characterized by comprising a light emitting unit and a color conversion unit arranged on the light emitting side of the light emitting unit, wherein the color conversion unit comprises: A substrate; The optical functional unit is positioned on one side of the substrate and comprises a limiting dam and at least one optical functional part, wherein the limiting dam is used for limiting at least one first opening, and one optical functional part is positioned in one first opening; The included angle formed between the plane of the side wall of the limiting dam close to the first opening and the plane of the substrate is smaller than the included angle formed between the plane of the side wall of the limiting dam far away from the first opening and the plane of the substrate.
2. 2. The light emitting chip of claim 1, wherein an angle between a plane of the sidewall of the defining dam away from the first opening and a plane of the substrate is in a range of 80 ° to 90 °, and/or, And an included angle formed between a plane of the side wall of the limiting dam, which is close to the first opening, and a plane of the substrate is within a range of 50-80 degrees.
3. 3. The light-emitting chip according to claim 1, further comprising a light-transmitting portion including a first portion covering a surface of the optical functional unit remote from the substrate, and a second portion extending beyond the surface of the optical functional unit remote from the substrate, the first portion and the second portion being continuously distributed.
4. 4. A light emitting chip according to claim 3, wherein the orthographic projection of the light transmitting portion on the substrate completely covers the orthographic projection of the surface of the optical function unit away from the substrate on the substrate, and the outer contour of the first portion coincides with the outer contour of the surface of the optical function unit away from the substrate.
5. 5. The light emitting chip of claim 4, wherein the second portion is disposed around the first portion.
6. 6. The light-emitting chip according to claim 3, wherein the material of the light-transmitting portion includes at least one of silicon nitride, silicon oxynitride, silicon nitride oxide, and silicon oxycarbide.
7. 7. The light emitting chip of claim 1, wherein the outline of the orthographic projection of the optical functional unit on the substrate is located inside the outer outline of the substrate without overlapping.
8. 8. The light-emitting chip according to any one of claims 3 to 7, further comprising a first encapsulation layer provided on a side of the light-transmitting portion away from the substrate; The first packaging layer coats the light-transmitting part and at least covers the side wall of the optical functional unit.
9. 9. The light-emitting chip according to claim 8, wherein the light-transmitting portion includes a first face facing the substrate, a second face facing away from the substrate, and a side face connecting between the first face and the second face, and wherein the first encapsulation layer is disposed in contact with the first face, the side face, and a portion of the second face beyond a surface of the optical functional unit facing away from the substrate.
10. 10. The light emitting chip of claim 8, wherein an outer contour of the orthographic projection of the first encapsulation layer on the substrate is located inside the outer contour of the substrate and does not overlap.
11. 11. The light-emitting chip according to claim 8, wherein a thickness of the first encapsulation layer is larger than a thickness of the light-transmitting portion.
12. 12. The light-emitting chip according to claim 8, further comprising a second encapsulation layer between the substrate and the optical functional unit, the second encapsulation layer and the first encapsulation layer together forming a sealed space surrounding the optical functional unit and the light-transmitting portion.
13. 13. The light emitting chip of any one of claims 1-7, wherein the defining dam defines a plurality of first openings; The optical function unit includes a plurality of optical function sections including a first optical function section, a second optical function section, and a third optical function section; the light emitting unit comprises a plurality of light emitting parts, wherein the light emitting parts comprise a first light emitting part, a second light emitting part and a third light emitting part, and the first light emitting part, the second light emitting part and the third light emitting part emit blue light or ultraviolet light; the plurality of light emitting parts are positioned on one side of the optical functional part away from the substrate; The first light emitting part is arranged opposite to the first optical function part, so that the light emitted by the first light emitting part enters the first optical function part, and the first optical function part converts the light emitted by the first light emitting part into red light; The second light emitting part is arranged opposite to the second optical function part, so that the light emitted by the second light emitting part enters the second optical function part, and the second optical function part converts the light emitted by the second light emitting part into green light; The third light emitting part is arranged opposite to the third optical function part, so that the light emitted by the third light emitting part enters the third optical function part, and the third optical function part converts or maintains the light emitted by the third light emitting part into blue light.
14. 14. The light emitting chip of claim 13, wherein the material of the first optical functional portion comprises red quantum dots and the material of the second optical functional portion comprises green quantum dots.
15. 15. The light-emitting chip according to claim 13, further comprising a filter layer between the substrate and the optical functional unit; the light filtering layer comprises a plurality of light filtering parts and a light shielding layer with a plurality of second openings, and the light filtering parts are arranged in one-to-one correspondence with the second openings; the plurality of light filtering parts comprise red color resistors, green color resistors and blue color resistors; The red color resistor is arranged opposite to the first optical function part, the green color resistor is arranged opposite to the second optical function part, and the blue color resistor is arranged opposite to the third optical function part.
16. 16. The light-emitting chip according to claim 13, further comprising a dielectric film between the substrate and the optical functional unit, the dielectric film transmitting red light and green light and reflecting blue light; The dielectric film covers the first optical functional portion and the second optical functional portion, and there is no overlap between an orthographic projection of the dielectric film on the substrate and an orthographic projection of the third functional portion on the substrate.
17. 17. The light emitting chip of claim 13, wherein the light emitting device comprises a light emitting device, The light-emitting chip further comprises a dam which is arranged on one side of the optical functional unit far away from the substrate; The dam defines a third opening, and an orthographic projection of the plurality of optical functions on the substrate is positioned within an orthographic projection of the third opening on the substrate.
18. 18. The light-emitting chip according to claim 13, wherein a shortest distance between any one of the plurality of optical function sections in the optical function unit and a side wall of the defining dam away from the first opening is a first distance; The shortest distance between any adjacent optical functional parts in the plurality of optical functional parts in the optical functional unit is a second distance; The first distance is less than the second distance.
19. 19. The light-emitting chip according to claim 13, wherein a ratio of a sum of areas of the plurality of optical functional portions to an area of the optical functional unit is greater than 70%.
20. 20. The light emitting chip of claim 13, wherein the light emitting device comprises a light emitting device, The light emitting part comprises a first type semiconductor layer, a multiple quantum well layer and a second semiconductor layer which are sequentially stacked, wherein the first type semiconductor layer is closer to the substrate than the second type semiconductor layer; Wherein the first type semiconductor layers of the plurality of light emitting parts are of an integral structure.

Description

Light-emitting chip, preparation method thereof and display substrate Technical Field The disclosure relates to the technical field of display, in particular to a light emitting chip, a preparation method thereof and a display substrate. Background Micro-LED (Micro light emitting diode) display devices are a new generation of display technology, and have been the focus of research in the display field due to their small size, high brightness, high luminous efficiency, low power consumption, and the like. However, when Micro-LEDs are applied to a display substrate, there are problems of small aperture ratio and low resolution. Disclosure of Invention An embodiment of the disclosure aims to provide a light emitting chip, a preparation method thereof and a display substrate, which are used for improving the ratio of a light emitting area in the light emitting chip so as to improve the resolution of the display substrate. In order to achieve the above object, the embodiments of the present disclosure provide the following technical solutions: In one aspect, a light emitting chip is provided. The light emitting chip comprises a light emitting unit and a color conversion unit arranged on the light emitting side of the light emitting unit, wherein the color conversion unit comprises a substrate and an optical function unit, the optical function unit is arranged on one side of the substrate, the optical function unit comprises a limiting dam and at least one optical function part, the limiting dam is used for limiting at least one first opening, one optical function part is arranged in one first opening, and an angle formed between a plane of a side wall of the limiting dam, which is close to the first opening, and a plane of the substrate is smaller than an angle formed between a plane of a side wall of the limiting dam, which is far away from the first opening, and a plane of the substrate. The light emitting chip comprises a light emitting unit and a color conversion unit arranged on the light emitting side of the light emitting unit, wherein the color conversion unit is obtained by splitting a color conversion substrate through a cutting channel, and because the angle of an included angle formed between the plane of the side wall of the limiting dam close to the first opening and the plane of the substrate is smaller than the angle of an included angle formed between the plane of the side wall of the limiting dam far from the first opening and the plane of the substrate, the side wall of the limiting dam far from the first opening is more vertical than the side wall of the limiting dam close to the first opening, namely, the side wall of the limiting dam close to the cutting channel is more vertical than the side wall of the limiting dam close to the first opening, for example, the side wall of the limiting dam far from the first opening is perpendicular to the substrate, namely, the side wall of the limiting dam close to the cutting channel is perpendicular to the substrate. According to the characteristics of the photoetching process and the etching process, the first opening can be obtained by adopting the photoetching process to carry out patterning treatment on the initial limiting dam, the cutting channel is obtained by adopting the etching process on the adjacent limiting dam, namely, the cutting channel is formed by etching on the basis of the limiting dam after the first opening is formed by adopting the photoetching process, in the etching process for forming the cutting channel, the width of the cutting channel can be designed according to the opening size of a mask layer adopted in the etching process, thus, the sizes of the first opening and the cutting channel are not limited by the opening size of the mask layer adopted in the photoetching process, the size of the first opening can be increased due to the minimum size of the limiting dam set by the process limit, and the size of the cutting channel can be increased, so that the size of the limiting dam can be reduced, namely, the size of the limiting dam can not be limited by the minimum width of the limiting dam formed by adopting the photoetching process, the occupation ratio of the limiting dam in the color conversion unit is reduced, the occupation ratio of the first opening (namely, the occupation ratio of the optical functional part) is increased, the occupation ratio of the optical functional part in the luminous chip can be increased, and the luminous resolution of the luminous chip can be improved. In some embodiments, an included angle between a plane of the side wall of the limiting dam away from the first opening and a plane of the substrate is in a range of 80 ° to 90 °, and/or an included angle between a plane of the side wall of the limiting dam near the first opening and a plane of the substrate is in a range of 50 ° to 80 °. In some embodiments, a light transmissive portion is also included, the light transmissive portion includi