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CN-122003007-A - Perovskite solar cell

CN122003007ACN 122003007 ACN122003007 ACN 122003007ACN-122003007-A

Abstract

The invention relates to a perovskite solar cell which comprises a perovskite light absorption layer and a light-emitting passivation layer arranged on the surface of the perovskite light absorption layer, wherein the light-emitting passivation layer has a zero-dimensional perovskite structure. The luminescent passivation layer with the zero-dimensional perovskite structure has excellent environmental stability, is favorable for protecting the perovskite light absorption layer, so that the environmental stability of the solar cell is improved, the high photoluminescence quantum yield is favorable for reducing non-radiative recombination of carriers, the efficiency of the solar cell is improved, the service life of the carriers of the solar cell can be prolonged by introducing the luminescent passivation layer, the transmission time of the carriers is prolonged, and the photoelectric conversion efficiency of the solar cell is improved.

Inventors

  • LI ZIJIA
  • HE CHENXU
  • QIN XIAOYANG
  • LI XIAOWEI
  • WANG YONG

Assignees

  • 正泰新能科技股份有限公司

Dates

Publication Date
20260508
Application Date
20260205

Claims (10)

  1. 1. The perovskite solar cell is characterized by comprising a perovskite light absorption layer and a light-emitting passivation layer arranged on the surface of the perovskite light absorption layer; The light-emitting passivation layer has a zero-dimensional perovskite structure.
  2. 2. The perovskite solar cell of claim 1, wherein the perovskite light absorbing layer comprises ABX 3 perovskite, wherein a comprises any one or a combination of at least two of Cs, FA, or MA, B comprises Pb, and X comprises any one or a combination of at least two of Cl, br, or I.
  3. 3. The perovskite solar cell according to claim 1 or 2, wherein the material of the light-emitting passivation layer is Cs 3 Cu 2 X 5 , wherein X is a halogen ion; The halogen ion comprises any one or a combination of at least two of Cl, br or I.
  4. 4. A perovskite solar cell according to claim 3, wherein the method of preparing the luminescent passivation layer comprises the steps of: Spin-coating the quantum dot solution on the perovskite light absorption layer, and heating to form a light-emitting passivation layer; the quantum dots in the quantum dot solution are made of Cs 3 Cu 2 X 5 , wherein X is halogen ions, and the halogen ions comprise any one or a combination of at least two of Cl, br and I.
  5. 5. The perovskite solar cell of claim 4, wherein the concentration of quantum dots in the quantum dot solution is 0.3mg/mL to 0.7mg/mL.
  6. 6. The perovskite solar cell of claim 4 or 5, wherein the spin-coating speed of the spin-coating is 3500r/s to 4500r/s; and/or the spin coating time is 25 s-35 s.
  7. 7. The perovskite solar cell according to any one of claims 4 to 6, wherein the temperature of heating is 90 ℃ to 110 ℃; and/or heating for 8-12 min.
  8. 8. The perovskite solar cell according to any one of claims 4 to 7, wherein the preparation method of the quantum dot solution comprises mixing CsX and CuX in a polar solvent to obtain a precursor solution; Wherein X is halogen ion, and the halogen ion comprises any one or a combination of at least two of Cl, br and I.
  9. 9. The perovskite solar cell of claim 8, wherein the polar solvent comprises dimethyl sulfoxide; And/or, the non-polar solvent used for the anti-solvent induction comprises toluene; And/or the organic solvent comprises isopropanol.
  10. 10. The perovskite solar cell according to any one of claims 1 to 9, wherein the perovskite solar cell comprises a crystalline silicon cell, a composite layer, a hole transport layer, a perovskite light absorption layer, a light emitting passivation layer, an electron transport layer, an electron blocking layer and an electrode layer which are stacked.

Description

Perovskite solar cell Technical Field The invention belongs to the technical field of solar cells, and relates to a perovskite solar cell. Background Perovskite solar cells are receiving attention because of their excellent photoelectric conversion efficiency and low cost manufacturing processes. However, the performance and stability of such batteries still face challenges, mainly arising from the nature and drawbacks of the perovskite materials themselves. First, defects in perovskite materials can trap free charges, affecting photovoltaic performance parameters of the cell, such as open circuit Voltage (VOC), short circuit current density (JSC), fill Factor (FF), and photoelectric conversion efficiency. These defects can trap carriers, resulting in non-radiative recombination, reducing cell efficiency. Second, the stability problem of perovskite materials is also a major obstacle limiting their commercialization. Defects in perovskite thin films can cause charged ions to accumulate at the interface under the action of an electric field, causing doping effects due to band bending, current density-voltage (J-V) hysteresis, phase separation, and degradation of the perovskite or metal electrode. Migration of these defects is primarily through the grain boundaries of the perovskite, and therefore passivation of the extended defects is required to hinder the migration path. Further, deep level defects in perovskite materials can trap electrons or holes, and these carriers cannot escape with the help of thermal activation, resulting in release of part of the electrical energy into adjacent lattices in the form of phonons, thereby reducing the open circuit voltage and photoelectric conversion efficiency of the cell. Non-radiative recombination processes (NRR) reduce steady state charge density, thereby reducing quasi-fermi level splitting and ultimately VOC of the solar cell. In view of the foregoing, the performance and lifetime of perovskite solar cells are severely impacted by defects and stability issues, and there is a need to develop an effective passivation strategy and improved material formulation to increase the efficiency and stability of the cells. Disclosure of Invention Aiming at the defects existing in the prior art, the invention aims to provide the perovskite solar cell, wherein the arrangement of the luminous passivation layer is beneficial to protecting the perovskite light absorption layer, so that the environmental stability of the solar cell is improved, the high photoluminescence quantum yield is beneficial to reducing the non-radiative recombination of carriers, the efficiency of the solar cell is improved, the introduction of the luminous passivation layer can improve the service life of the carriers of the solar cell, the transmission time of the carriers is prolonged, and the photoelectric conversion efficiency of the solar cell is improved. In order to achieve the aim of the invention, the invention adopts the following technical scheme: The invention provides a perovskite solar cell, which comprises a perovskite light absorption layer and a light-emitting passivation layer arranged on the surface of the perovskite light absorption layer; The light-emitting passivation layer has a zero-dimensional perovskite structure. The light-emitting passivation layer used by the invention has a zero-dimensional perovskite structure, has high photoluminescence quantum yield, longer carrier service life, good environmental stability, high dielectric constant and low exciton binding energy, thus being beneficial to reducing non-radiative recombination of carriers and improving the efficiency of a solar cell, improving the carrier service life of a perovskite light-absorbing layer, increasing the carrier transmission time, improving the photoelectric conversion efficiency of the perovskite solar cell, being beneficial to enhancing a built-in electric field, thereby promoting the effective separation of photo-generated electrons and holes, enabling electrons and holes to be more easily separated by lower exciton binding, reducing the recombination of carriers, being beneficial to improving the open circuit voltage and photoelectric conversion efficiency of the solar cell, and being capable of passivating part of defects in the perovskite light-absorbing layer, reducing non-radiative recombination and improving the photoelectric performance of the cell. In certain embodiments, the perovskite light absorbing layer comprises ABX 3 perovskite, wherein a comprises any one or a combination of at least two of Cs, FA, or MA, B comprises Pb, and X comprises any one or a combination of at least two of Cl, br, or I. In some embodiments, the material of the light-emitting passivation layer is Cs 3Cu2X5, where X is a halogen ion; The halide ions include any one or a combination of at least two of Cl, br, or I, and typical but non-limiting combinations include combinations of Cl and Br, combinations of Cl and I, co