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CN-122003013-A - Based on PTB7-Th: Y6: ag2Near-infrared photoelectric detector of Te QDs and preparation method thereof

CN122003013ACN 122003013 ACN122003013 ACN 122003013ACN-122003013-A

Abstract

The invention belongs to the technical field of near infrared photoelectric detection, and discloses a near infrared photoelectric detector based on Ag2Te QDs (quantum dots) PTB7-Th (positive temperature coefficient) and Y6 and a preparation method thereof. The near infrared photoelectric detector comprises a bottom electrode, a hole transport layer, an interface modification layer, an active layer, an electron transport layer and a top electrode which are sequentially arranged from bottom to top, wherein the active layer is made of PTB7-Th, Y6 is Ag2Te QDs. The invention uses the ternary heterojunction formed by ternary doping as an active layer, thereby obviously improving the performance of the detector and realizing the near infrared wide spectrum detection range of 505-1550 nm.

Inventors

  • LI GUOHUI
  • TANG CHEN
  • CUI YANXIA

Assignees

  • 太原理工大学

Dates

Publication Date
20260508
Application Date
20260127

Claims (10)

  1. 1. A near infrared photoelectric detector based on PTB7-Th, Y6, ag 2 Te QDs is characterized by comprising a bottom electrode (1), a hole transmission layer (2), an interface modification layer (3), an active layer (4), an electron transmission layer (5) and a top electrode (6) which are sequentially arranged from bottom to top, wherein the active layer (4) is made of PTB7-Th, Y6, ag 2 Te QDs.
  2. 2. A near infrared photodetector based on PTB7-Th: y6:ag 2 Te QDs according to claim 1, characterized in that the mass ratio of materials in the active layer (4) is PTB7-Th: y6:ag 2 Te QDs = 1:1.5-2:5-8.
  3. 3. A near infrared photodetector based on PTB7-Th: y6:ag 2 Te QDs according to claim 1, characterized in that the mass ratio of materials in the active layer (4) is PTB7-Th: y6:ag 2 Te QDs = 1:1.7:6.
  4. 4. The near infrared photodetector based on PTB7-Th: Y6: ag 2 Te QDs according to claim 1, wherein the bottom electrode (1) is made of ITO, the top electrode (6) is made of Ag, and the thickness of the top electrode (6) is 80-150 nm.
  5. 5. The near infrared photodetector based on PTB7-Th: Y6: ag 2 Te QDs according to claim 1, wherein the material of said electron transport layer (5) is C 60 , the material of said hole transport layer (2) is MoO 3 , and the material of the interface modification layer (3) is Al 2 O 3 .
  6. 6. The near infrared photodetector based on PTB7-Th: Y6: ag 2 Te QDs according to claim 5, wherein the thickness of the interface modification layer is 1-3nm, the thickness of the hole transport layer (2) is 8-12nm, the thickness of the electron transport layer (5) is 8-12nm, and the thickness of the active layer (4) is 150-200nm.
  7. 7. The method for manufacturing a near infrared photodetector based on PTB7-Th: Y6: ag 2 Te QDs according to claim 1, comprising the steps of: step 1, evaporating a hole transport layer (2) on an electrode layer of conductive glass; step 2, preparing an interface modification layer (3) on the hole transport layer (2); Step 3, preparing Ag 2 Te QDs, dissolving three solids of PTB7-Th, Y6 and Ag 2 Te QDs in chlorobenzene according to a proportion, and stirring in an inert atmosphere to obtain a ternary system PTB7-Th, Y6 and Ag 2 Te QDs solution; step 4, spin-coating a ternary system PTB7-Th: Y6: ag 2 Te QDs solution on the interface modification layer (3) to form an active layer (4); And 5, evaporating an electron transport layer (5) on the active layer (4) by using vacuum evaporation coating, and evaporating a top electrode (6) on the electron transport layer (5).
  8. 8. The method for preparing a near infrared photodetector based on PTB7-Th: Y6: ag 2 Te QDs according to claim 7, wherein in step 1, the method further comprises the step of cleaning conductive glass, wherein the evaporation process parameters of the hole transport layer (2) are that the vacuum degree is 10 -4 Pa, and the temperature is 450 ℃; in the step 2, an interface modification layer (3) is prepared on the hole transport layer (2) through ALD atomic layer deposition; In the step 5, when the electron transport layer (5) is evaporated, the vacuum degree is 10 -4 Pa, the temperature in the chamber is 350 ℃, and when the top electrode (6) is evaporated, the vacuum degree is 10 -4 Pa, and the temperature in the chamber is 400 ℃.
  9. 9. The method for preparing a near infrared photodetector based on PTB7-Th: Y6: ag 2 Te QDs according to claim 7, wherein in said step 3, the preparation method of Ag 2 Te QDs is as follows: Step 3.1, dissolving 5mmol of AgI powder in 5ml of OLAm solution under inert atmosphere to obtain AgI-OLAm precursor; Step 3.2, dissolving 2.5mmol of TeO 2 powder in 10ml of DDT solution in inert atmosphere and stirring, and then slowly heating to 100 ℃ to obtain a TeO 2 -DDT precursor; And 3.3, heating a container filled with OLAm and ODE to 130 ℃, adding AgI-OLAm precursor into the container, fully mixing, quickly injecting TeO 2 -DDT precursor into the container, and purifying by methanol and toluene after the Ag 2 Te QDs nucleate to obtain the Ag 2 Te QDs.
  10. 10. The method for preparing a near infrared photodetector based on PTB7-Th: Y6: ag 2 Te QDs according to claim 7, wherein in said step 4, spin coating parameters are that the rotation speed is 700 r/min, the time is 40s, and the temperature is 100 ℃ and the annealing is 10 min.

Description

Near infrared photoelectric detector based on PTB7-Th, Y6, ag 2 Te QDs and preparation method thereof Technical Field The invention relates to the technical field of near infrared photoelectric detection, in particular to a near infrared photoelectric detector based on PTB7-Th: Y6: ag 2 Te QDs and a preparation method thereof. Background The photoelectric detector is an optoelectronic device capable of converting an incident light signal into an electric signal, the breakthrough development of a short wave near infrared (SWIR, 1.1-3 mu m) technology and the penetrability detection advantage of the photoelectric detector in the fields of military reconnaissance, agricultural monitoring, medical imaging, environmental perception and the like are pushing the photoelectric system to innovate towards the fusion direction of high sensitivity and all-weather multispectral, and the photoelectric detector becomes a key enabling technology in the intelligent perception era. Currently commercial SWIR photodetectors rely mostly on conventional semiconductors such as InGaAs, hgCdTe, inAs. However, the preparation of the photodetectors requires severe preparation conditions and complex preparation processes, so that the preparation cost is high, the preparation rate is low, and the industrialization process is blocked to a certain extent due to the difficulty in large-scale integration. Colloidal Quantum Dots (CQDS) are a new semiconductor material that is considered as a candidate for a promising material because of its low cost of preparation, and ability to be synthesized in large-scale solutions, and its size adjustability, quantum confinement effect, etc. The quantum dot material is directly processed on a flexible substrate (polyimide and PET) through a solution method (spin coating and spray coating), high-temperature epitaxial growth is not needed, and the mechanical flexibility of the quantum dot material can bear tens of thousands of times of bending, so that the core contradiction of the traditional semiconductor in flexible application is effectively relieved. Currently, the quantum dot infrared photoelectric detector which is mature in the market is PbS, hgTe, pbSe. However, the popularization of quantum dot photodetectors is not negligible due to the fact that the quantum dot photodetectors contain toxic heavy metal elements. Therefore, development of a less toxic and environment-friendly quantum dot material without heavy metal is important. Based on this, silver chalcogen (Ag 2 X, x=s, se, te) CQDs provide a useful alternative to lead and mercury based CQDs, where Ag 2 Te CQDs are non-toxic against themselves and have good absorption in the infrared region with good performance in both bio-imaging and fluorescent probes. In the field of photoelectric detection, quantum dot photoelectric detectors have been rapidly developed, but the problem that existing quantum dots have surface defect states (mainly comprising coordination ions or dangling bonds and the like) prevents effective separation and transmission of carriers. 2024, tang Li et al, invented a nontoxic Ag 2 Te colloid quantum dot photovoltaic infrared detector (patent number: 118175858A), which is formed by compounding a ZnO electron transport layer and a MoO 3 hole transport layer with Ag 2 Te colloid quantum dot thin films respectively, so that the width of a potential barrier region of a p ‑ n heterojunction is widened, effective separation of surface carriers is promoted, the effective working area of photoelectric conversion is increased, and the sensitivity of the detector is improved. Finally, the peak response rate of the device is 0.6A/W under the irradiation of a 660nm light source, and the peak response rate of the device is 0.69A/W under the irradiation of a 940 nm light source. Under 660nm light source irradiation, the peak detection rate of the device is 1.5010 Under the irradiation of 10 Jones and 940nm light source, the peak ratio detection rate of the device is 1.9210 10 Jones, 2024, wang Binyu et al design a silver telluride &#x2011 quantum dot photoelectric detector with a zinc selenide core-shell structure (patent number: 117660011A), and the core-shell structure is constructed by reasonably designing and growing a zinc selenide-shell layer material, so that the problems of a large number of surface defect states and the like of the conventional quantum dot material are effectively solved, and the generation capacity of photo-generated carriers of the material is improved. Finally, the detector achieves 3.92 at 800nm10 The specific detection rate of 9 Jones, the responsivity of 447mA/W, at 950nm, realizes 1.6310 9 Jones' specific detection rate, 180mA/W responsivity. The above work has made a significant contribution to the development of Ag 2 Te quantum dot photodetectors. However, the spectral response range of these devices is still relatively limited and is limited at the specific detection rate (D) Further improvements in