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CN-122003018-A - Crystal silicon perovskite laminated battery and preparation method thereof

CN122003018ACN 122003018 ACN122003018 ACN 122003018ACN-122003018-A

Abstract

The invention discloses a crystalline silicon perovskite laminated cell and a preparation method thereof, and relates to the technical field of solar cells. The preparation method of the crystalline silicon perovskite laminated battery comprises the steps of preparing a crystalline silicon battery, wherein the crystalline silicon battery comprises a crystalline silicon substrate, a first main surface of the crystalline silicon substrate comprises a first central area and a first edge area surrounding the first central area, a first protection layer which is continuously arranged is formed in the first edge area, a first crystalline silicon battery functional layer is formed in the first central area, the surface of the first protection layer protrudes out of the surface of the first crystalline silicon battery functional layer, and a perovskite battery functional layer is prepared on the surface of the first crystalline silicon battery functional layer. In the embodiment, the first protective layer which is continuously arranged is formed in the edge area of the first main surface of the crystalline silicon substrate to prevent the solution coated by the slit coating equipment from overflowing, so that the short circuit of the battery is avoided.

Inventors

  • CHEN KUN
  • HE ZIJUAN
  • YIN HAIPENG

Assignees

  • 晶澳（扬州）太阳能科技有限公司

Dates

Publication Date
20260508
Application Date
20260319

Claims (10)

  1. 1. The preparation method of the crystalline silicon perovskite laminated cell is characterized by comprising the following steps of: A1, preparing a crystalline silicon battery, wherein the crystalline silicon battery comprises a crystalline silicon substrate (111), a first main surface of the crystalline silicon substrate (111) comprises a first central area and a first edge area surrounding the first central area, a first protective layer (1121) which is continuously arranged is formed in the first edge area, and a first crystalline silicon battery functional layer is formed in the first central area, wherein the surface of the first protective layer (1121) protrudes out of the surface of the first crystalline silicon battery functional layer; and A2, preparing a perovskite battery functional layer on the surface of the first crystalline silicon battery functional layer.
  2. 2. The method for producing a crystalline silicon perovskite stacked cell as claimed in claim 1, wherein step A1 comprises: step A11-1, covering a mask layer (119) on the first central area, forming a first protection layer (1121) which is continuously arranged on the first edge area, and removing the mask layer (119); Or alternatively And A11-2, preparing a first protective layer (1121) on the first main surface of the crystalline silicon substrate (111), and removing the part of the first protective layer (1121) corresponding to the first central area to obtain the first protective layer (1121) continuously arranged in the first edge area.
  3. 3. The method for producing a crystalline silicon perovskite stacked cell according to claim 1, wherein, In the step A1, the second main surface of the crystalline silicon substrate (111) comprises a second central area and a second edge area surrounding the second central area, a second protective layer (1122) which is arranged continuously is formed in the second edge area, and a second crystalline silicon cell functional layer is formed in the second central area, wherein the surface of the second protective layer (1122) protrudes out of the surface of the second crystalline silicon cell functional layer; Preferably, in step A1, a third protective layer (1123) is formed on the side surface of the crystalline silicon substrate (111); preferably, the first protective layer (1121), the second protective layer (1122) and the third protective layer (1123) are in communication; Preferably, the first protective layer (1121), the second protective layer (1122), and the third protective layer (1123) each comprise a hydrophobic material; preferably, the hydrophobic material comprises at least one of C5-18-perfluoro-alkane, perfluoro-acrylate polymer, polydimethylsiloxane, methyl silicone resin and phenyl silicone resin.
  4. 4. A method of producing a crystalline silicon perovskite stacked cell as claimed in claim 2 or claim 3 wherein step A1 further comprises: step A12, etching a first central area of a first main surface of the crystalline silicon substrate (111) to a preset depth; Step A13, preparing the first crystalline silicon cell functional layer in a first central area of a first main surface of the crystalline silicon substrate (111); Preferably, the step A12 further comprises texturing a first central region of the first main surface of the crystalline silicon substrate (111) to form a large suede (1111); Preferably, the step A12 further comprises the step of reproducing the large suede (1111) of the first main surface on the basis of the large suede (1111) to form a small suede (1112), wherein the pyramid height of the small suede (1112) is smaller than the pyramid height of the large suede (1111).
  5. 5. The method for manufacturing a crystalline silicon perovskite stacked cell according to claim 1, wherein the step A2 comprises: Step A21, preparing a first carrier transport layer (121) on the surface of the first crystalline silicon cell functional layer; Step A22, forming a perovskite layer (122) on the outer surface of the first carrier transport layer (121) by adopting a wet method or a dry-wet mixing method through a slit coating mode; a23, sequentially laminating a second carrier transmission layer (123) and a first transparent conductive layer (124) on the outer surface of the perovskite layer (122); preferably, the step a23 further includes: forming an interface modification layer on the outer surface of the perovskite layer (122) before forming the second carrier transport layer (123); preferably, the step a23 further includes: forming a barrier layer on an outer surface of the second carrier transport layer (123) before forming the first transparent conductive layer (124); preferably, the method further comprises: And A3, forming a first metal electrode (125) on the surface of the perovskite battery functional layer, and forming a second metal electrode (118) on the surface of the second crystal silicon battery functional layer.
  6. 6. A crystalline silicon perovskite laminate cell, comprising: a crystalline silicon substrate (111), the first major surface of the crystalline silicon substrate (111) comprising a first central region and a first edge region surrounding the first central region; a first protective layer (1121) provided continuously to the first edge region; A first crystalline silicon cell functional layer arranged in the first central region, the surface of the first protective layer (1121) protruding from the surface of the first crystalline silicon cell functional layer, and And a perovskite battery functional layer arranged on the surface of the first crystal silicon battery functional layer.
  7. 7. The crystalline silicon perovskite stacked cell as claimed in claim 6, wherein, The width of the first protective layer (1121) is 0.5 mm-1 mm; Preferably, the second main surface of the crystalline silicon substrate (111) comprises a second central region and a second edge region surrounding the second central region, and the crystalline silicon perovskite laminated cell further comprises a second protective layer (1122) continuously arranged at the second edge region and a second crystalline silicon cell functional layer arranged at the second central region, wherein the surface of the second protective layer (1122) protrudes from the surface of the second crystalline silicon cell functional layer; preferably, a third protective layer (1123) is further arranged on the side surface of the crystal silicon substrate (111); preferably, the first protective layer (1121), the second protective layer (1122) and the third protective layer (1123) are in communication; Preferably, the thicknesses of the first protective layer (1121), the second protective layer (1122) and the third protective layer (1123) are 10 nm-2.0 μm.
  8. 8. The crystalline silicon perovskite stack cell as recited in claim 7, wherein a first central region of the crystalline silicon substrate (111) is recessed inwardly relative to the first edge region; preferably, a second central region of the crystalline silicon substrate (111) is recessed inwardly relative to the second edge region; Preferably, the surfaces of the first central area and the second central area are respectively provided with a suede of a pyramid structure, and the pyramid height of the suede of the first central area is smaller than that of the suede of the second central area; preferably, the crystalline silicon perovskite laminated cell further comprises a first metal electrode (125) arranged on the surface of the perovskite cell functional layer and a second metal electrode (118) arranged on the surface of the second crystalline silicon cell functional layer.
  9. 9. The crystalline silicon perovskite laminated cell according to claim 7, wherein the first crystalline silicon cell functional layer comprises a first carrier collection layer (114) provided on a first central region surface of the crystalline silicon substrate (111), and an interconnection layer (115) provided on the first carrier collection layer (114), the second crystalline silicon cell functional layer comprises a second carrier collection layer (116) provided on a second central region surface of the crystalline silicon substrate (111), or the first crystalline silicon cell functional layer comprises an interconnection layer (115) provided on a first central region surface of the crystalline silicon substrate (111), the second central region of the crystalline silicon substrate (111) comprises a plurality of first conductive regions and a plurality of second conductive regions alternately provided, the first carrier collection layer (114) is provided on a surface of the crystalline silicon substrate (111) corresponding to the first conductive regions, and the second carrier collection layer (116) is provided on a surface of the crystalline silicon substrate (111) corresponding to the second conductive regions; preferably, the first carrier-collecting layer (114) has a conductivity type opposite to the conductivity type of the second carrier-collecting layer (116); Preferably, the first carrier-collecting layer (114) has a conductivity type opposite to that of the crystalline silicon substrate (111); Preferably, the first carrier-collecting layer (114) is a doped layer formed by directly doping the crystalline silicon substrate (111), or is a stacked structure of a silicon oxide layer and a doped polysilicon layer, or is a stacked structure of an intrinsic silicon-containing layer and a doped silicon-containing layer containing microcrystalline silicon and/or amorphous silicon; preferably, the interconnection layer (115) comprises at least one of indium tin oxide, aluminum doped zinc oxide, indium cerium oxide; Preferably, the second carrier-collecting layer (116) includes a stacked structure of an oxide layer and a doped polysilicon layer provided on a surface of the second central region of the crystalline silicon substrate (111), or a stacked structure of an intrinsic silicon-containing layer and a doped silicon-containing layer containing microcrystalline silicon and/or amorphous silicon.
  10. 10. The crystalline silicon perovskite stacked cell as claimed in claim 7, wherein, The perovskite battery functional layer comprises a first carrier transmission layer (121), a perovskite layer (122), a second carrier transmission layer (123) and a first transparent conductive layer (124) which are laminated from inside to outside; preferably, the perovskite battery further comprises an interface modification layer disposed between the perovskite layer (122) and the second carrier transport layer (123); preferably, the perovskite battery further comprises a barrier layer disposed between the second carrier transport layer (123) and the first transparent conductive layer (124); Preferably, the perovskite battery further comprises an anti-reflection layer arranged on the outer surface of the first transparent conductive layer (124).

Description

Crystal silicon perovskite laminated battery and preparation method thereof Technical Field The invention relates to the technical field of solar cells, in particular to a crystalline silicon perovskite laminated cell and a preparation method thereof. Background When the functional layer in the crystalline silicon perovskite laminated battery is prepared by adopting a slit coating mode, the control precision of a slit coating device on the edge of the upper surface of the battery is not high, the coated solution is easy to flow out from the edge, even flows to the lower surface along the side surface and contacts with the functional layer on the lower surface, and the solvent volatilizes at the flowing position of the solution to form a passage from the upper surface to the lower surface, so that the crystalline silicon perovskite laminated battery is short-circuited. Disclosure of Invention In view of this, embodiments of the present invention provide a crystalline silicon perovskite stacked cell and a method of manufacturing the same, which can prevent the solution coated by a slit coating apparatus from overflowing by a protective layer, thereby avoiding the formation of a conductive via layer from a functional layer of a first main surface to a functional layer of a second main surface. To achieve the above object, according to an aspect of an embodiment of the present invention, there is provided a method for manufacturing a crystalline silicon perovskite stacked cell, including: A1, preparing a crystalline silicon battery, wherein the crystalline silicon battery comprises a crystalline silicon substrate, a first main surface of the crystalline silicon substrate comprises a first central area and a first edge area surrounding the first central area, a first protection layer which is continuously arranged is formed in the first edge area, and a first crystalline silicon battery functional layer is formed in the first central area; and A2, preparing a perovskite battery functional layer on the surface of the first crystalline silicon battery functional layer. Preferably, step A1 comprises: step A11-1, covering a mask layer in a first central area, forming a continuously arranged first protective layer in a first edge area, and removing the mask layer; Or step A11-2, preparing a first protective layer on the first main surface of the crystalline silicon substrate, and removing the part corresponding to the first central area in the first protective layer to obtain the first protective layer continuously arranged in the first edge area. Preferably, in the step A1, the second main surface of the crystalline silicon substrate comprises a second central area and a second edge area surrounding the second central area, a second protection layer which is arranged continuously is formed in the second edge area, a second crystalline silicon cell functional layer is formed in the second central area, and the surface of the second protection layer protrudes out of the surface of the second crystalline silicon cell functional layer. Preferably, in step A1, a third protective layer is formed on the side of the crystalline silicon substrate. Preferably, the first protective layer, the second protective layer and the third protective layer are communicated. Preferably, the first protective layer, the second protective layer and the third protective layer each comprise a hydrophobic material. Preferably, the hydrophobic material comprises at least one of C5-18-perfluoro-alkane, perfluoro-acrylate polymer, polydimethylsiloxane, methyl silicone resin, phenyl silicone resin. Preferably, step A1 further comprises: step A12, etching a first central area of a first main surface of the crystalline silicon substrate to a preset depth; And A13, preparing a first crystalline silicon battery functional layer in a first central area of the first main surface of the crystalline silicon substrate. Preferably, step A12 further comprises texturing a first central region of the first major surface of the crystalline silicon substrate to form a large pile. Preferably, the step A12 further comprises the step of reproducing the large suede of the first main surface on the basis of the large suede to form a small suede, wherein the pyramid height of the small suede is smaller than that of the large suede. Preferably, step A2 comprises: Step A21, preparing a first carrier transport layer on the surface of the first crystalline silicon cell functional layer; step A22, forming a perovskite layer on the outer surface of the first carrier transmission layer in a slit coating mode by adopting a wet method or a dry-wet mixing method; And step A23, sequentially laminating a second carrier transport layer and a first transparent conductive layer on the outer surface of the perovskite layer. Preferably, step a23 further comprises: an interface modification layer is formed on the outer surface of the perovskite layer before the second carrier transport