CN-122003023-A - Light emitting element, electronic device, and method for manufacturing light emitting element

CN122003023ACN 122003023 ACN122003023 ACN 122003023ACN-122003023-A

Abstract

The present disclosure relates to a light emitting element, an electronic device, and a method for manufacturing the light emitting element. The light emitting element includes a first electrode, a functional layer disposed on the first electrode, a second electrode on the functional layer, and a capping layer on the second electrode. The second electrode includes a first layer on the functional layer, a second layer disposed on the first layer and including a material different from that of the first layer, and a third layer disposed on the second layer and including a material different from that of the second layer. The second layer includes a plurality of sublayers each including silver (Ag). The plurality of sublayers includes a first sublayer on the first layer, a second sublayer on the first sublayer, and a third sublayer on the second sublayer. The film density of the first sub-layer and the film density of the second sub-layer are different, and the film density of the second sub-layer and the film density of the third sub-layer are different.

Inventors

JIN HUI
SUN ZHIXI
Li Seji
LI JUNJIU

Assignees

三星显示有限公司

Dates

Publication Date: 20260508
Application Date: 20251031
Priority Date: 20241101

Claims (10)

1. A light-emitting element, wherein the light-emitting element comprises: A first electrode; A functional layer disposed on the first electrode and including an emission layer; A second electrode disposed on the functional layer, the second electrode comprising: A first layer disposed on the functional layer; a second layer disposed on the first layer and comprising a material different from a material of the first layer, the second layer comprising: a plurality of sublayers, each comprising silver, the plurality of sublayers comprising: a first sub-layer disposed on the first layer; A second sub-layer disposed on the first sub-layer, and A third sub-layer disposed on the second sub-layer, and A third layer disposed on the second layer and comprising a material different from the material of the second layer, and A capping layer disposed on the second electrode, Wherein the film density of the first sub-layer and the film density of the second sub-layer are different, and the film density of the second sub-layer and the film density of the third sub-layer are different.
2. The light-emitting element according to claim 1, wherein the film density of the second sub-layer is lower than the film density of each of the first sub-layer and the third sub-layer, and The film density of the first sub-layer and the film density of the third sub-layer are the same as each other.
3. The light-emitting element according to claim 1, wherein the film density of the second sub-layer is higher than the film density of each of the first sub-layer and the third sub-layer, and The film density of the first sub-layer and the film density of the third sub-layer are the same as each other.
4. The light emitting element of claim 1, wherein the plurality of sub-layers further comprises: a fourth sub-layer disposed on the third sub-layer, and A fifth sub-layer disposed on the fourth sub-layer, Wherein the film density of the third sub-layer and the film density of the fourth sub-layer are different, and the film density of the fourth sub-layer and the film density of the fifth sub-layer are different.
5. The light-emitting element according to claim 1, wherein the second sub-layer is directly provided on the first sub-layer, and The third sub-layer is disposed directly on the second sub-layer.
6. The light-emitting element according to claim 1, wherein the first sub-layer, the second sub-layer, and the third sub-layer have a shape of a single body.
7. The light emitting device of claim 1, wherein the first sub-layer has a thickness of 20 angstroms to 30 angstroms, The second sub-layer has a thickness of 50 to 70 angstroms, and The third sub-layer has a thickness of 20 angstroms to 30 angstroms.
8. The light emitting element of claim 1, wherein each of the first, second, and third sublayers comprises silver.
9. An electronic device, wherein the electronic device comprises: A base layer; A circuit layer disposed on the substrate layer, and A display element layer disposed on the circuit layer and including: a light-emitting element, the light-emitting element comprising: A first electrode; a functional layer disposed on the first electrode and including an emission layer, and A second electrode disposed on the functional layer, the second electrode comprising: A first layer disposed on the functional layer; a second layer disposed on the first layer and comprising a material different from a material of the first layer, the second layer comprising: a plurality of sublayers, each comprising silver, the plurality of sublayers comprising: a first sub-layer disposed on the first layer; A second sub-layer disposed on the first sub-layer, and A third sub-layer disposed on the second sub-layer, and A third layer disposed on the second layer and comprising a material different from the material of the second layer, Wherein the second sub-layer has a lower film density than each of the first and third sub-layers, and Wherein the film density of the first sub-layer and the film density of the third sub-layer are the same as each other.
10. A method for manufacturing a light emitting element, wherein the method comprises: Forming a functional layer including an emission layer on the first electrode; Forming a second electrode on the functional layer, and A capping layer is formed on the second electrode, Wherein the forming the second electrode comprises: Forming a first layer on the functional layer; Forming a second layer on the first layer by a material different from that of the first layer, and Forming a third layer on the second layer by a material different from the material of the second layer, Wherein said forming said second layer comprises: Depositing silver onto the first layer at a first deposition rate to form a first sub-layer; depositing silver onto the first sub-layer at a second deposition rate to form a second sub-layer, and Silver is deposited onto the second sub-layer at a third deposition rate to form a third sub-layer, Wherein the first deposition rate and the second deposition rate are different, and the second deposition rate and the third deposition rate are different.

Description

Light emitting element, electronic device, and method for manufacturing light emitting element Cross Reference to Related Applications The present application claims priority and ownership rights obtained from korean patent application No. 10-2024-0153314 filed on 11/01 of 2024, the contents of which are incorporated herein by reference in their entirety. Technical Field The present disclosure herein relates to light emitting elements, electronic devices including light emitting elements, and methods for manufacturing light emitting elements. Background Recently, organic electroluminescent display devices are actively being developed as image display devices. The organic electroluminescent display device is different from a liquid crystal display device or the like, and is a so-called self-emission display device in which holes and electrons injected from first and second electrodes are recombined in an emission layer, so that a light-emitting material including an organic compound in the emission layer emits light to realize display. In order to apply the light emitting element to a display device, high light emitting efficiency and long life of the light emitting element are desired, and materials and structures that can stably realize the desired light emitting element are being continuously developed. Disclosure of Invention The present disclosure provides a light emitting element having improved light emitting efficiency and element lifetime and an electronic device including the light emitting element. The present disclosure also provides a method for manufacturing a light emitting element, which has a shortened process time and improves element reliability. Embodiments of the inventive concept provide a light emitting element including a first electrode, a functional layer disposed on the first electrode and including an emission layer, a second electrode disposed on the functional layer, and a capping layer disposed on the second electrode. The second electrode includes a first layer disposed on the functional layer, a second layer disposed on the first layer and including a material different from that of the first layer, and a third layer disposed on the second layer and including a material different from that of the second layer. The second layer includes a plurality of sublayers each including silver (Ag), and the plurality of sublayers includes a first sublayer disposed on the first layer, a second sublayer disposed on the first sublayer, and a third sublayer disposed on the second sublayer. The film density of the first sub-layer and the film density of the second sub-layer are different, and the film density of the second sub-layer and the film density of the third sub-layer are different. In an embodiment, the film density of the second sub-layer may be lower than the film density of each of the first sub-layer and the third sub-layer, and the film density of the first sub-layer and the film density of the third sub-layer may be substantially the same as each other. In an embodiment, the film density of the second sub-layer may be higher than the film density of each of the first sub-layer and the third sub-layer, and the film density of the first sub-layer and the film density of the third sub-layer may be substantially the same as each other. In an embodiment, the plurality of sub-layers may further include a fourth sub-layer disposed on the third sub-layer, and a fifth sub-layer disposed on the fourth sub-layer. The film density of the third sub-layer and the film density of the fourth sub-layer may be different, and the film density of the fourth sub-layer and the film density of the fifth sub-layer may be different. In an embodiment, the second sub-layer may be disposed directly on the first sub-layer, and the third sub-layer may be disposed directly on the second sub-layer. In an embodiment, the first, second and third sub-layers may have the shape of a unitary body. In an embodiment, the first layer may be disposed directly on the functional layer, the second layer may be disposed directly on the first layer, and the third layer may be disposed directly on the second layer. In an embodiment, the functional layer may include a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, and an electron transport region disposed on the emission layer. The first layer may be disposed directly on the electron transport region and the capping layer may be disposed directly on the third layer. In an embodiment, the second electrode may be a cathode. In an embodiment, the first electrode may include at least one material selected from materials including Ag, mg, cu, al, pt, pd, au, ni, nd, ir, cr, li, ca, liF, mo, ti, W, in, sn and Zn, a compound selected from two or more of the materials, or at least one of indium tin oxide ("ITO"), indium zinc oxide ("IZO"), zinc oxide (ZnO), and indium tin zinc oxide ("ITZO"). In an embodiment, the first