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CN-122003069-A - Method for gas phase passivation of perovskite film, perovskite film and perovskite solar cell

CN122003069ACN 122003069 ACN122003069 ACN 122003069ACN-122003069-A

Abstract

The invention provides a method for gas phase passivation of a perovskite film, the perovskite film and a perovskite solar cell, wherein the method comprises the following steps of performing crystallization treatment on a perovskite precursor solution coated on the surface of a substrate in passivation atmosphere to obtain the perovskite film after gas phase passivation; or performing passivation post-treatment on the perovskite film after crystallization treatment in a passivation atmosphere to obtain the perovskite film after gas phase passivation, wherein the passivation gas in the passivation atmosphere comprises H 2 S and/or SO 2 . The method provided by the invention carries out passivation treatment during or after crystallization treatment, improves the crystallization performance of perovskite while increasing passivation depth, reduces repeated heating process, and can well remove the solvent in the perovskite precursor solution so as to obtain a perovskite film with good passivation quality, and can overcome the defect that the solution method reduces passivation effect along with size increase.

Inventors

  • YANG XUPENG
  • DENG XIANZHU
  • CHEN YINGYING
  • Xiong Gaoyang
  • SHAO JUN

Assignees

  • 极电光能有限公司

Dates

Publication Date
20260508
Application Date
20241101

Claims (10)

  1. 1. The method for the gas phase passivation of the perovskite film is characterized by comprising the following steps of carrying out crystallization treatment on a perovskite precursor solution coated on the surface of a substrate in passivation atmosphere to obtain the perovskite film after the gas phase passivation; Or in passivation atmosphere, performing passivation post-treatment on the perovskite film after crystallization treatment to obtain a perovskite film after gas phase passivation; The passivation gas in the passivation atmosphere comprises H 2 S and/or SO 2 .
  2. 2. The method of claim 1, wherein the passivation gas further comprises NH 3 .
  3. 3. The method according to claim 2, wherein the content of NH 3 in the passivation gas is not less than 20vol%, and the content of H 2 S and/or SO 2 is not less than 20vol%.
  4. 4. A method according to claim 3, wherein the source of passivation gas comprises any one or a combination of at least two of ammonium sulphide, ammonium bisulphite, ammonium sulphate or ammonium sulphite.
  5. 5. A method according to claim 3, wherein the passivation gas comprises a mixture of NH 3 and H 2 S in a volume ratio of 1.8:1 to 2.2:1.
  6. 6. The method of claim 5, wherein the molar concentration of passivating gas in the passivating atmosphere is from 0.44mM to 22.06mM.
  7. 7. The method according to claim 5, wherein the passivation gas is a mixed gas obtained by heating an aqueous solution of ammonium sulfide, the mixed gas including water vapor therein, the heating being at a temperature of 40 ℃ to 65 ℃.
  8. 8. The method according to claim 1, wherein the temperature of the devitrification treatment is above 100 ℃, preferably between 100 ℃ and 180 ℃; preferably, the time of the crystallization treatment is 5min or more, preferably 5min to 90min, and more preferably 10min to 20min.
  9. 9. A perovskite thin film, characterized in that the perovskite thin film is a gas phase passivated perovskite thin film obtained by the method according to any one of claims 1 to 8.
  10. 10. A perovskite solar cell, characterized in that it comprises a gas phase passivated perovskite thin film obtained by the method according to any one of claims 1 to 8.

Description

Method for gas phase passivation of perovskite film, perovskite film and perovskite solar cell Technical Field The invention belongs to the technical field of solar cells, relates to a film passivation method, and particularly relates to a method for passivating a perovskite film by a gas phase, the perovskite film and a perovskite solar cell. Background Perovskite solar cells have gained wide attention in the photovoltaic industry due to their advantages of wide absorption band gap, high absorption factor, tunable band gap, low exciton binding energy, low cost, and the like. However, due to the characteristic of the soft lattice structure, the perovskite film is easily decomposed under the influence of factors such as light, heat, water, oxygen and the like, and the starting point of decomposition is often a defect in the perovskite film. Increasing the packaging process level to block water oxygen, or passivating the perovskite thin film, can reduce the adverse effects of defects in the perovskite thin film. Conventional surface passivation methods are performed as solution coating, but as perovskite solar cell sizes increase, coating non-uniformities increase further, resulting in a diminishing final passivation effect as the size increases. In this regard, it is desirable to provide a highly efficient passivation method that can span the size constraints to enhance the passivation effect of perovskite thin films in perovskite solar cells. Disclosure of Invention Aiming at the defects existing in the prior art, the invention aims to provide a method for passivating a perovskite film by gas phase, the perovskite film and a perovskite solar cell, which can overcome the defect that the passivation effect is reduced along with the increase of the size by the traditional solution method and can also improve the passivation quality of the perovskite film. To achieve the purpose, the invention adopts the following technical scheme: In a first aspect, the invention provides a method for gas phase passivation of a perovskite film, which comprises the following steps of carrying out crystallization treatment on a perovskite precursor solution coated on the surface of a substrate in passivation atmosphere to obtain the perovskite film after gas phase passivation. Or in passivation atmosphere, performing passivation post-treatment on the perovskite film after crystallization treatment to obtain the perovskite film after gas phase passivation. The passivation gas in the passivation atmosphere comprises H 2 S and/or SO 2. The method provided by the invention utilizes H 2 S and/or SO 2 to passivate in the crystallization process or after crystallization treatment of the perovskite precursor solution, hydrogen sulfide can form hydrogen bonds with iodide ions and passivate Pb vacancies in the perovskite film, sulfur dioxide can react with defect sites on the surface of the perovskite film to form a passivation layer, SO that corrosion of external water oxygen environment on the perovskite film is prevented, stability is improved, interaction with iodide ions can be realized, migration of iodide ions is reduced, the passivation technical scheme is adopted in crystallization treatment, the crystallization performance of the perovskite is improved while the passivation depth is increased, repeated heating processes are reduced, and meanwhile, the solvent in the perovskite precursor solution can be well removed, SO that the perovskite film with good passivation quality can be obtained, and the defect that the passivation effect is reduced along with the increase of the size of the solution method can be overcome. Preferably, the passivation gas further comprises NH 3. Preferably, the content of NH 3 in the passivation gas is not less than 20vol%, and the content of H 2 S and/or SO 2 is not less than 20vol%. Preferably, the source of the passivation gas comprises any one or a combination of at least two of ammonium sulfide, ammonium bisulfide, ammonium sulfate or ammonium sulfite. Preferably, the passivation gas comprises a mixture gas of NH 3 and H 2 S in a volume ratio of 1.8:1 to 2.2:1. Preferably, the molar concentration of the passivating gas in the passivating atmosphere is from 0.44mM to 22.06mM. Preferably, the passivation gas is a mixed gas obtained by heating an aqueous solution of ammonium sulfide, the mixed gas including water vapor therein, and the heating temperature being 40 ℃ to 65 ℃. Preferably, the temperature of the crystallization treatment is 100 ℃ or more, preferably 100 ℃ to 180 ℃. Preferably, the time of the crystallization treatment is 5min or more, preferably 5min to 90min, and more preferably 10min to 20min. In a second aspect, the present invention provides a perovskite film, which is a gas phase passivated perovskite film obtained by the method according to the first aspect. In a third aspect, the present invention provides a perovskite solar cell comprising a gas phase passivated perovskite thin