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CN-122003075-A - Spectrum-adjustable photoelectric detector and preparation method thereof

CN122003075ACN 122003075 ACN122003075 ACN 122003075ACN-122003075-A

Abstract

The invention discloses a spectrum-adjustable photoelectric detector and a preparation method thereof, comprising the following steps of providing a silicon substrate; regulating the ultraviolet ozone treatment time of different areas on the surface of a silicon substrate, forming silicon oxide layers with different thickness in each area on the silicon substrate, spin-coating perovskite precursor solution on the surface of one side of the silicon substrate, which is provided with the silicon oxide layer, placing the silicon oxide layers in air to form a methylamine lead iodine perovskite layer, spin-coating the precursor solution of the air transmission layer on the surface of the methylamine lead iodine perovskite layer, placing the methylamine lead iodine perovskite layer in nitrogen to form the air transmission layer, and magnetically sputtering a top electrode to obtain the spectrum-adjustable photoelectric detector. According to the invention, through regulating and controlling the ultraviolet ozone treatment time of different areas on the surface of the silicon substrate, the silicon oxide layers with different thicknesses of the areas are formed on the silicon substrate, and the spectral response range is regulated and controlled by controlling the thickness of the silicon oxide layers, so that multispectral identification and detection are realized, the preparation process is simple, and the photoelectric detector has excellent performance.

Inventors

  • LI LIANG
  • CAO FENGREN
  • ZHAO HAN

Assignees

  • 苏州大学

Dates

Publication Date
20260508
Application Date
20251231

Claims (10)

  1. 1. A method for manufacturing a spectrum-adjustable photoelectric detector, which is characterized by comprising the following steps: S1, providing a silicon substrate; s2, regulating and controlling the ultraviolet ozone treatment time of different areas on the surface of the silicon substrate, and forming silicon oxide layers with different thicknesses in each area on the silicon substrate; S3, spin-coating perovskite precursor solution on the surface of one side of the silicon substrate with the silicon oxide layer, and placing the surface in air to form a methylamine lead iodine perovskite layer; S4, spin-coating an air transmission layer precursor solution on the surface of the methylamine lead-iodine perovskite layer, and placing the precursor solution in nitrogen to form an air transmission layer; s5, magnetically sputtering a top electrode to obtain the spectrum-adjustable photoelectric detector.
  2. 2. The method of manufacturing a spectrally tunable photodetector of claim 1 wherein S1 further comprises the step of immersing the silicon substrate in a hydrofluoric acid solution for cleaning.
  3. 3. The method for preparing a spectrum adjustable photoelectric detector according to claim 1, wherein in S2, the adjusting and controlling the ultraviolet ozone treatment time of different areas on the surface of the silicon substrate specifically comprises the steps of: (1) Covering the silicon substrate with polydimethylsiloxane; (2) Removing polydimethylsiloxane in a designated area on the surface of the silicon substrate to expose the silicon substrate, and placing the silicon substrate in an ultraviolet ozone machine for treatment, so that silicon oxide is formed; (3) Removing polydimethylsiloxane in another designated area on the surface of the silicon substrate to expose the silicon substrate, and placing the silicon substrate in an ultraviolet ozone machine for treatment, so that silicon oxide is formed; (4) Repeating the step (3) for 0-5 times; (5) And removing the rest polydimethylsiloxane on the surface of the silicon substrate to expose the silicon substrate.
  4. 4. The method for manufacturing a spectrum-adjustable photoelectric detector according to claim 3, wherein in the step (1), the polydimethylsiloxane is coated on the silicon substrate, specifically, the polydimethylsiloxane and the curing agent are mixed and then coated on the surface of the silicon substrate, and the silicon substrate is subjected to heating treatment at 140-160 ℃.
  5. 5. A method of producing a spectrally tunable photodetector according to claim 3, wherein said designated areas in step (2) and step (3) independently comprise a plurality of arrayed cell areas.
  6. 6. The method of producing a spectrally tunable photodetector of claim 1 wherein in S3, the concentration of the perovskite precursor solution is 1-1.8mM.
  7. 7. The method for preparing a spectrally tunable photodetector of claim 1 wherein in S4, the solute of said air transport layer precursor solution is poly-3-hexylthiophene at a concentration of 10mg/mL.
  8. 8. The method for manufacturing a spectrum-adjustable photoelectric detector according to claim 1, wherein in S5, the magnetron sputtering top electrode is specifically that a silicon substrate is fixed in a magnetron sputtering cavity in a rotatable mode around a central axis, and an array electrode is sputtered on the surface of an air transmission layer with the aid of a mask.
  9. 9. The method for manufacturing the spectrum-adjustable photoelectric detector according to claim 1, wherein the plane of the silicon substrate is perpendicular to the sputtering direction, the rotation speed of the silicon substrate around the central axis is 0.5-5r/s, and the sputtering condition is that the air pressure is 0.1-1Pa, the power is 30-80W, and the time is 10-40min.
  10. 10. A spectrally tunable photodetector made by the method of manufacture of claims 1-9.

Description

Spectrum-adjustable photoelectric detector and preparation method thereof Technical Field The invention relates to the technical field of photoelectric detectors, in particular to a spectrum-adjustable photoelectric detector and a preparation method thereof. Background The optical communication technology has the advantages of long transmission distance, high speed, large information capacity, low cost and the like, and has wide application in modern communication networks, including long-distance communication, local area network and interconnection of data centers. In addition, the optical signal is not subject to electromagnetic interference naturally, so that the optical signal is particularly suitable for running in a high electromagnetic noise environment and has irreplaceable advantages in key scenes. However, optical transmission also presents a risk of eavesdropping and interference, possibly resulting in privacy disclosure. Therefore, new encryption policies must be developed to prevent data interception and unauthorized decryption. Physical layer encryption takes advantage of inherent material properties and is a promising alternative. Researchers have developed photodetectors with specific responses (bipolar, dual-frequency, narrowband, broadband, or special response waveforms) for encrypted optical communications, depending on the composition, morphology, and device structure of the thin film. Wherein multispectral detection multiplies decryption complexity by expanding the key space into the multidimensional domain. However, this often requires the assembly of complex devices, which conflicts with the principles of device miniaturization, integration and intellectualization. In the current photovoltaic field, silicon materials remain dominant with their mature mass producibility, high integration compatibility and excellent performance. Solution-treated metal halide perovskites have great potential for their excellent optoelectronic properties and ease of manufacture, particularly in that they can be prepared at room temperature under certain conditions, thereby reducing the slow coating speed and high energy consumption of the annealing process. The perovskite is combined with silicon, so that shortwave sensitivity difference of silicon and unabsorbing of perovskite under long wavelength are compensated, and detection capability, response speed and other parameters are greatly improved. In addition, the perovskite film can be directly deposited on the silicon wafer, ensures compatibility with the existing silicon-based production line, and is convenient for miniaturization and integration with low cost. Therefore, developing and optimizing suitable perovskite/silicon structures is essential for future commercial applications. Disclosure of Invention Aiming at the defects in the prior art, the invention provides the spectrum-adjustable photoelectric detector and the preparation method thereof, which are used for regulating and controlling the ultraviolet ozone treatment time of different areas on the surface of the silicon substrate, forming silicon oxide layers with different thickness in each area on the silicon substrate, further realizing spectrum tuning and being applied to encrypted optical communication. In order to solve the technical problem, a first aspect of the present invention provides a method for preparing a spectrum-adjustable photodetector, which includes the following steps: S1, providing a silicon substrate; s2, regulating and controlling the ultraviolet ozone treatment time of different areas on the surface of the silicon substrate, and forming silicon oxide layers with different thicknesses in each area on the silicon substrate; S3, spin-coating perovskite precursor solution on the surface of one side of the silicon substrate with the silicon oxide layer, and placing the surface in air to form a methylamine lead iodine perovskite layer; S4, spin-coating an air transmission layer precursor solution on the surface of the methylamine lead-iodine perovskite layer, and placing the precursor solution in nitrogen to form an air transmission layer; s5, magnetically sputtering a top electrode to obtain the spectrum-adjustable photoelectric detector. According to the invention, through regulating and controlling the ultraviolet ozone treatment time of different areas on the surface of the silicon substrate, the silicon oxide layers with different thicknesses of the areas are formed on the silicon substrate, and the spectral response range is regulated and controlled by controlling the thickness of the silicon oxide layers, so that multispectral identification and detection are realized, and the method is applied to optical encryption communication, and the difficulty of decryption is increased because the intensity and wavelength of light are combined arbitrarily. The method does not need to use solvents for preparing the silicon oxide layers with different thicknesses, does not in