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CN-122003076-A - CsPbBr3Quantum dot modified inverted inorganic perovskite solar cell and preparation method thereof

CN122003076ACN 122003076 ACN122003076 ACN 122003076ACN-122003076-A

Abstract

The invention discloses an inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots and a preparation method thereof; the method is modified by CsPbBr 3 quantum dot interface, can effectively inhibit non-radiative recombination, promote efficient extraction and transmission of electrons, reduce charge loss, passivate surface defects of perovskite thin films, promote crystallization quality, inhibit grain boundary defects and optimize the overall performance of the thin films. The modification layer simultaneously induces the perovskite conduction band/valence band to move downwards, optimizes energy level matching with the PCBM electron transport layer, reduces electron injection barrier and interface recombination, and improves charge transport efficiency. In addition, the modification layer enhances the built-in electric field to raise the open circuit voltage. Through the synergistic effect of defect passivation, energy level optimization and built-in electric field enhancement, the Photoelectric Conversion Efficiency (PCE) of the device is improved from 19.61% to 21.47%, and the performance breakthrough is realized.

Inventors

  • LIU ZHIKE
  • XU DONGFANG
  • CUI KAIXIANG
  • DING LIPING
  • WANG HANYE

Assignees

  • 陕西师范大学

Dates

Publication Date
20260508
Application Date
20260119

Claims (10)

  1. 1. The preparation method of the inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots is characterized by comprising the following steps of: step 1, preprocessing conductive glass; Step 2, spin-coating nickel oxide aqueous solution on conductive glass, and continuously spin-coating a mixed SAM solution on the surface of the conductive glass after annealing to obtain a hole transport layer after annealing, wherein the mixed SAM solution is a mixed solution of [2- (9H-carbazole-9-yl) ethyl ] phosphonic acid and [2- (3, 6-dimethoxy-9H-carbazole-9-yl) ethyl ] phosphonic acid in ethanol; Step 3, spin-coating CsPbI 3 perovskite precursor solution on the hole transport layer, and annealing to obtain a CsPbI 3 perovskite light absorption layer; Step 4, spin-coating a quantum dot solution on a CsPbI 3 perovskite light absorption layer, and annealing after spin-coating, wherein CsPbBr 3 quantum dots coated by mesoporous silica nano particles are distributed on the CsPbI 3 perovskite light absorption layer, csPbBr 3 quantum dots coated by mesoporous silica nano particles are enriched at the crystal boundary and defect dense position of the CsPbI 3 perovskite light absorption layer, the quantum dot solution is a dispersion liquid of CsPbBr 3 quantum dots coated by mesoporous silica nano particles dispersed in chlorobenzene, and the size of the CsPbBr 3 quantum dots coated by mesoporous silica nano particles is 4nm-12nm; Step 5, preparing a PCBM electron transport layer on the CsPbI 3 perovskite light absorption layer; Step 6, preparing a BCP blocking layer on the PCBM electron transport layer; And 7, preparing a metal electrode on the BCP barrier layer to obtain the inverted perovskite solar cell.
  2. 2. The method for preparing the inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots according to claim 1, wherein in the step 4, the size of the CsPbBr 3 quantum dots coated by mesoporous silica nanoparticles is 8nm.
  3. 3. The preparation method of the inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots, which is characterized in that in the step 2, the concentration of [2- (9H-carbazole-9-yl) ethyl ] phosphonic acid and [2- (3, 6-dimethoxy-9H-carbazole-9-yl) ethyl ] phosphonic acid in a mixed SAM solution is 1:1 mg/mL, and the concentration of a nickel oxide aqueous solution is 20mg/mL.
  4. 4. The preparation method of the inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots, which is disclosed in claim 1, is characterized in that in the step 3, the solute of CsPbI 3 perovskite precursor solution is cesium iodide and lead hydride-iodine, the solvent is a mixed solution of DMF and DMSO, and the concentration is 0.75M.
  5. 5. The method for preparing the inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots according to claim 1, wherein in the step 3, spin coating of a titanium ore precursor solution is divided into two stages, the rotational speed is 1000 rpm in the step 1, the time is 10 s, the rotational speed is 4000 rpm in the step 2, the time is 30 s, the annealing temperature after spin coating is 160 o C, and the annealing time is 50 min.
  6. 6. The method for preparing a CsPbBr 3 quantum dot modified inverted inorganic perovskite solar cell according to claim 1, wherein in step 4, the concentration of the quantum dot solution is 0.025-0.1 mg/mL.
  7. 7. The method for preparing the inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots according to claim 1, wherein in the step 4, the spin-coating speed of the quantum dot solution is 4000-6000rpm, the spin-coating time is 30 s, the annealing temperature is 50-100 ℃, and the annealing time is 3-10min.
  8. 8. The method for preparing the inverted inorganic perovskite solar cell modified by the CsPbBr 3 quantum dots according to claim 1, wherein in the step 5, the preparation process of the PCBM electron transport layer is that PCBM is dissolved in chlorobenzene to obtain PCBM solution, and the PCBM solution is spin-coated on the CsPbBr 3 quantum dot modification layer at the rotating speed of 2000 rpm to obtain the PCBM electron transport layer.
  9. 9. The method for preparing the inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots according to claim 1, wherein in the step 6, the preparation process of the BCP barrier layer is that BCP powder is dissolved in isopropanol to obtain BCP solution, and the BCP solution is spin-coated on the PCBM electron transport layer at a rotation speed of 5000 rpm to obtain the BCP barrier layer.
  10. 10. An inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots produced by the method of any one of claims 1 to 9, comprising a conductive glass, niO x /SAM hole transport layer, csPbI 3 perovskite light absorbing layer, csPbBr 3 quantum dot modification layer, PCBM electron transport layer, BCP barrier layer and metal electrode stacked in that order from bottom to top.

Description

Inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots and preparation method thereof Technical Field The invention belongs to the technical field of perovskite materials and devices, and relates to an inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots and a preparation method thereof. Background With the continuous growth of global energy demand and the increasing of energy crisis, the excessive use of fossil fuels leads to the prominence of resource shortage problems and causes a series of serious environmental problems such as climate change, air pollution, ecological damage and the like. The phenomena of frequent weather, rising sea level, increased respiratory diseases, damaged biodiversity and the like are promoting the global acceleration of energy structure transformation and the promotion of the research and the application of renewable energy. In clean energy sources such as solar energy, wind energy and water energy, the solar energy has great development potential due to the unique advantages of abundant resources, wide distribution, high conversion efficiency and the like, and becomes an important way for coping with energy crisis. In recent years, an inverted structure inorganic Perovskite Solar Cell (PSCs) has become a research hotspot due to its excellent thermal stability, potential low cost and its application prospect in stacked cells. Compared with the traditional organic-inorganic hybrid perovskite material, the all-inorganic perovskite material has excellent stability under high temperature and high illumination, and is more suitable for practical application. However, the development of inverted inorganics PSCs still faces a number of challenges. On one hand, the energy level matching between the functional layers is poor, the separation and transmission efficiency of carriers is seriously affected, and on the other hand, high-density defect states exist at the interface of the perovskite film and the charge transmission layer, so that serious non-radiative recombination loss is caused, and the open circuit voltage (V OC) of the device is obviously reduced. Disclosure of Invention The invention aims to overcome the defects of the prior art, provides an inverted inorganic perovskite solar cell modified by CsPbBr 3 quantum dots and a preparation method thereof, and aims to solve the key technical problems of energy level matching unbalance, overhigh interface defect density, obvious open circuit voltage loss and the like commonly existing in the field of the existing inverted inorganic perovskite solar cell. In order to achieve the purpose, the invention is realized by adopting the following technical scheme: A preparation method of a CsPbBr 3 quantum dot modified inverted inorganic perovskite solar cell comprises the following steps: step 1, preprocessing conductive glass; Step 2, spin-coating nickel oxide aqueous solution on conductive glass, and continuously spin-coating a mixed SAM solution on the surface of the conductive glass after annealing to obtain a hole transport layer after annealing, wherein the mixed SAM solution is a mixed solution of [2- (9H-carbazole-9-yl) ethyl ] phosphonic acid and [2- (3, 6-dimethoxy-9H-carbazole-9-yl) ethyl ] phosphonic acid in ethanol; Step 3, spin-coating CsPbI 3 perovskite precursor solution on the hole transport layer, and annealing to obtain a CsPbI 3 perovskite light absorption layer; Step 4, spin-coating a quantum dot solution on a CsPbI 3 perovskite light absorption layer, and annealing after spin-coating, wherein CsPbBr 3 quantum dots coated by mesoporous silica nano particles are distributed on the CsPbI 3 perovskite light absorption layer, csPbBr 3 quantum dots coated by mesoporous silica nano particles are enriched at the crystal boundary and defect dense position of the CsPbI 3 perovskite light absorption layer, the quantum dot solution is a dispersion liquid of CsPbBr 3 quantum dots coated by mesoporous silica nano particles dispersed in chlorobenzene, and the size of the CsPbBr 3 quantum dots coated by mesoporous silica nano particles is 4nm-12nm; Step 5, preparing a PCBM electron transport layer on the CsPbI 3 perovskite light absorption layer; Step 6, preparing a BCP blocking layer on the PCBM electron transport layer; And 7, preparing a metal electrode on the BCP barrier layer to obtain the inverted perovskite solar cell. The invention further improves that: Preferably, in step 4, the size of the CsPbBr 3 quantum dot coated with the mesoporous silica nanoparticle is 8nm. Preferably, in step 2, the concentration of both [2- (9H-carbazol-9-yl) ethyl ] phosphonic acid and [2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphonic acid in the mixed SAM solution is 1 mg/mL, and the concentration of the nickel oxide aqueous solution is 20mg/mL. Preferably, in the step 3, the solute of the CsPbI 3 perovskite precursor solution is cesium iodide and lead hydride three-iodine, the solvent is a mixed