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CN-122003079-A - Perovskite solar cell and preparation method and application thereof

CN122003079ACN 122003079 ACN122003079 ACN 122003079ACN-122003079-A

Abstract

The invention provides a preparation method of a perovskite solar cell, which comprises the following steps of S1 spin-coating a SnO 2 precursor on the surface of a substrate, annealing, S2 spin-coating a ZnO precursor on the surface of the annealed SnO 2 precursor, annealing, S3 spin-coating a perovskite precursor on the surface of the annealed ZnO precursor, heating the perovskite precursor to 100 ℃, annealing, S4 spin-coating an organic solution of PTAA on the surface of the annealed perovskite precursor, annealing, and finally depositing a MoO 3 layer and an electrode on the surface of the annealed PTAA by vacuum thermal evaporation in sequence, wherein the perovskite precursor is prepared by dissolving CsI, pbI 2 and PbBr 2 in a molar ratio of 2:1:1 to obtain a 1M CsPbI 2 Br precursor solution. The invention also provides the perovskite solar cell prepared by the method and application thereof.

Inventors

  • YANG BIN
  • GUO HAOXUAN

Assignees

  • 湖南大学

Dates

Publication Date
20260508
Application Date
20251128

Claims (10)

  1. 1. The preparation method of the perovskite solar cell is characterized by comprising the following steps of: the method comprises the following steps: S1, spin-coating a SnO 2 precursor on the surface of a substrate, and annealing; S2, spin-coating a ZnO precursor on the surface of the annealed SnO 2 precursor, and annealing; S3, spin-coating a perovskite precursor on the surface of the annealed ZnO precursor, and then heating the perovskite precursor to 100 ℃ for annealing; s4, spin-coating an organic solution of PTAA on the surface of the annealed perovskite precursor, and annealing; S5, sequentially depositing a MoO 3 layer and an electrode on the annealed PTAA surface through vacuum thermal evaporation; The perovskite precursor is dissolved in DMSO according to a molar ratio of 2:1:1 by CsI, pbI 2 and PbBr 2 to obtain a 1M CsPbI 2 Br precursor solution.
  2. 2. The method of manufacturing a perovskite solar cell as claimed in claim 1, wherein: The SnO 2 precursor in the S1 is obtained by diluting a 12: 12 wt% SnO 2 colloidal solution with water according to a weight ratio of 1:4; the annealing temperature in S1 is 150 ℃ and the annealing time is 30 minutes; the spin-coating speed in S1 was 5000rpm for 30 seconds.
  3. 3. The method of manufacturing a perovskite solar cell as claimed in claim 1, wherein: the annealing temperature in S2 is 150 ℃ and the annealing time is 30 minutes; the spin coating rotating speed in the S2 is 5000rpm, and the time is 30 seconds; The ZnO precursor in the S2 is obtained by diluting 2.5wt% ZnO colloid solution with absolute ethyl alcohol according to the weight ratio of 1:4.
  4. 4. The method of manufacturing a perovskite solar cell as claimed in claim 1, wherein: Spin coating in S3 includes the step of spin coating at 1000rpm for 10 seconds followed by spin coating at 3000 rpm for 40 seconds; The heating in S3 comprises the step of heating 3.5-4 cm away from the substrate by adopting hot air at 100 ℃; the annealing temperature in S3 was 200 ℃ and the annealing time was 10 minutes.
  5. 5. The method of manufacturing a perovskite solar cell as claimed in claim 1, wherein: the annealing temperature in S4 was 100 ℃ and the annealing time was 15 minutes.
  6. 6. The method of manufacturing a perovskite solar cell as claimed in claim 1, wherein: The spin coating speed in S4 is 4000 rpm; The concentration of the organic solution of PTAA in S4 was 10 mg/mL; the solvent of the organic solution of PTAA in S4 includes chlorobenzene.
  7. 7. The method of manufacturing a perovskite solar cell as claimed in claim 1, wherein: the substrate comprises an ITO glass substrate; The ITO glass substrate comprises an ITO glass substrate obtained after ultraviolet-ozone treatment.
  8. 8. The method of manufacturing a perovskite solar cell as claimed in claim 1, wherein: the thickness of the MoO 3 layer is 6 nm; the thickness of the electrode is 85nm; The electrode comprises a silver electrode.
  9. 9. The perovskite solar cell prepared by the preparation method of the perovskite solar cell as claimed in claim 1.
  10. 10. Use of a perovskite solar cell as claimed in claim 9, wherein: The method is applied to solar power generation.

Description

Perovskite solar cell and preparation method and application thereof Technical Field The invention relates to a preparation method of a CsPbI 2 Br perovskite film, and belongs to the field of solar cell materials. Background The formation mechanism of the poor buried interface holes in the all-inorganic perovskite film prepared by adopting the traditional gradient thermal annealing process is not clear so far. The present study found that residual DMSO plays a key role in the formation of buried interface holes during thermal annealing, and such holes can be effectively eliminated by promoting DMSO evaporation. The thermal spin coating annealing technology can rapidly remove residual solvent before perovskite crystallization, so that the CsPbI 2 Br film with high crystallinity and no holes is obtained. Furthermore, we first observed through experiments that the intermediate phase of the PbI 2-DMSO/PbBr2 -DMSO adduct in the initial film was gradually converted to the PbI 2/PbBr2 precursor, ultimately forming the phase transition path of the CsPbI 2 Br product. Due to the reduction of bulk charge recombination, the CsPbI 2 Br solar cell treated by the TSCA process realizes a short-circuit current density of 15.72mA/cm -2, a high open-circuit voltage of 1.32V and a Photoelectric Conversion Efficiency (PCE) of 14.89%, and is remarkably improved compared with 12.70% PCE of a GTA process device. The research provides an effective strategy for eliminating film holes for preparing the high-performance all-inorganic perovskite solar cell by regulating and controlling the solvent residual evaporation behavior. In view of its intrinsically excellent thermal stability and excellent photoelectric properties, all-inorganic perovskite CsPbX 3 (x=i, br, cl) has received a great deal of attention in recent years in the field of developing high-performance solar cells. Among all inorganic lead halide perovskites, mixed-halogen perovskites (e.g., csPbI 2 Br) are very promising candidates due to their stable phase structure and tunable optical band gap. However, to obtain a spatially uniform and pore-free CsPbI 2 Br perovskite thin film, it remains a challenge to build a critical active layer for this highly efficient, stable-running all-inorganic solar cell. As a common solvent for CsPbI 2 Br perovskite, dimethyl sulfoxide (DMSO) can effectively regulate crystallization kinetics to improve thin film morphology. However, due to its high boiling point (189 ℃), DMSO often remains inside the film during thermal annealing, resulting in the perovskite film producing unfavorable defects (e.g., voids). PbI 2 -DMSO adduct and residual DMSO, which are difficult to remove from perovskite thin films, can cause structural distortion and stability problems. Although antisolvent washes (e.g., isopropanol, chlorobenzene) can be used to remove DMSO residues, this method has the limitations of narrow process window (< 10 seconds) and poor reproducibility. The strong coordination between DMSO and PbI 2 forms a PbI 2 -DMSO adduct, which is converted to PbI 2 by removal of DMSO solvent to obtain the cubic phase CsPbI 2 Br perovskite. However, the removal of DMSO solvent depends on its effective mass transport from the bottom to the top of the solidified perovskite surface layer. Lateral transport and localized enrichment under the perovskite layer is significantly enhanced if the transport path of residual DMSO is blocked by the dense skin layer. In this case, thin film holes are eventually formed at DMSO enrichment, resulting in reduced device efficiency and long-term stability. To eliminate these pores, wang et al introduced Ethyl Acrylate (EA) to form volatile DMSO-EA complexes to effect co-evaporation, and have also studied to partially replace DMSO solvent with solid carbohydrazide to inhibit interfacial pore formation. Despite these advances in the organic-inorganic perovskite field, poor buried interfacial pores remain prevalent in all-inorganic perovskite films prepared using conventional gradient thermal annealing. Disclosure of Invention The first object of the present invention is to provide a method for producing a high quality all-inorganic perovskite thin film. The second object of the present invention is to provide an all-inorganic perovskite thin film prepared by the method. A third object of the present invention is to provide the use of the all-inorganic perovskite thin film. The invention is realized by the following technical scheme: A method for preparing a perovskite solar cell, comprising the steps of: S1, spin-coating a SnO 2 precursor on the surface of a substrate, and annealing; S2, spin-coating a ZnO precursor on the surface of the annealed SnO 2 precursor, and annealing; S3, spin-coating a perovskite precursor on the surface of the annealed ZnO precursor, and then heating the perovskite precursor to 100 ℃ for annealing; s4, spin-coating an organic solution of PTAA on the surface of the annealed perovskite precursor, a