CN-122003098-A - Magnetoresistive random access memory and manufacturing method thereof

Abstract

The invention discloses a magneto-resistive random access memory and a manufacturing method thereof, wherein the method for manufacturing a magneto-resistive random access memory (Magnetoresistive Random Access Memory, MRAM) element mainly comprises the steps of providing a substrate comprising an MRAM region and a logic region, forming a first inter-metal dielectric layer on the substrate, removing the first inter-metal dielectric layer by using a first patterning mask to form a first contact opening in the MRAM region and a second contact opening in the logic region, forming a metal nitride layer in the first contact opening and the second contact opening, removing part of the metal nitride layer and part of the first inter-metal dielectric layer in the logic region to form a trench opening, and forming a metal layer in the first contact opening, the second contact opening and the trench opening to form a first metal interconnection in the MRAM region and a second metal interconnection in the logic region.

Inventors

• WANG HUILIN
• XU QINGHUA
• Weng Chenyi
• ZHANG ZHEWEI

Assignees

• 联华电子股份有限公司

Dates

Publication Date

20260508

Application Date

20241115

Priority Date

20241101

Claims (17)

1. 1. A method of fabricating a magnetoresistive random access memory (Magnetoresistive Random Access Memory, MRAM) device, comprising: Providing a substrate comprising an MRAM region and a logic region; Forming a first inter-metal dielectric layer on the substrate; Removing the first inter-metal dielectric layer by using a first patterning mask to form a first contact opening in the MRAM region and a second contact opening in the logic region; forming a metal nitride layer in the first contact opening and the second contact opening; Removing a portion of the metal nitride layer and a portion of the first inter-metal dielectric layer of the logic region to form a trench opening; forming a metal layer in the first contact opening, the second contact opening and the trench opening to form a first metal interconnect in the MRAM region and a second metal interconnect in the logic region, and A magnetic tunnel junction (magnetic tunneling junction, MTJ) is formed over the first metal interconnect.
2. 2. The method of claim 1, further comprising: Forming a hard mask over the first inter-metal dielectric layer; Removing the hard mask and the first inter-metal dielectric layer using the first patterned mask to form the first contact opening in the MRAM region and the second contact opening in the logic region; forming the metal nitride layer in the first contact opening and the second contact opening; Removing a portion of the metal nitride layer and a portion of the first inter-metal dielectric layer of the logic region using a second patterned mask to form the trench opening; forming the metal layer in the first contact opening, the second contact opening and the trench opening, and The metal layer is planarized to form the first metal interconnect in the MRAM region and the second metal interconnect in the logic region.
3. 3. The method of claim 2, wherein the first metal interconnect comprises a first contact hole conductor.
4. 4. The method of claim 3, wherein the first contact hole conductor comprises: The metal nitride layer; A barrier layer disposed on the metal nitride layer, and The metal layer is disposed on the barrier layer.
5. 5. The method of claim 2, wherein the second metal interconnect comprises: a second contact hole conductor, and And the groove conductor is arranged on the second contact hole conductor.
6. 6. The method of claim 5, wherein the second contact hole conductor comprises: The metal nitride layer; A barrier layer disposed on the metal nitride layer, and The metal layer is disposed on the barrier layer.
7. 7. The method of claim 5, wherein the trench conductor comprises: Barrier layer, and The metal layer is disposed on the barrier layer.
8. 8. The method of claim 1, further comprising: forming a second inter-metal dielectric layer on the first inter-metal dielectric layer; forming a third metal interconnect on the first metal interconnect, and Forming the magnetic tunnel junction on the third metal interconnection.
9. 9. The method of claim 8, wherein the third metal interconnect comprises a contact hole conductor.
10. 10. The method of claim 1, wherein the metal nitride layer comprises titanium nitride.
11. 11. A magnetoresistive random access memory (Magnetoresistive Random Access Memory, MRAM) element, comprising: A substrate including an MRAM region and a logic region; A first inter-metal dielectric layer disposed on the substrate; A first metal interconnect disposed within the first intermetal dielectric layer of the MRAM region, wherein the first metal interconnect comprises a first contact hole conductor; A second metal interconnect disposed within the first inter-metal dielectric layer of the logic region, wherein the second metal interconnect comprises: a second contact hole conductor; A trench conductor disposed on the second contact hole conductor, wherein the second contact hole conductor and the trench conductor comprise different materials, and A magnetic tunnel junction (magnetic tunneling junction, MTJ) is disposed on the first metal interconnect.
12. 12. The MRAM element of claim 11, further comprising: a second inter-metal dielectric layer disposed on the first inter-metal dielectric layer; a third metal interconnect disposed on the first metal interconnect, and The magnetic tunneling junction is disposed on the third metal interconnect.
13. 13. The MRAM device of claim 12, wherein the third metal interconnect comprises a third contact hole conductor.
14. 14. The MRAM element of claim 12, further comprising: a third inter-metal dielectric layer disposed on the second inter-metal dielectric layer and surrounding the MTJ, and And a fourth metal interconnect disposed on the second metal interconnect.
15. 15. The MRAM device of claim 14, wherein the fourth metal interconnect comprises: Fourth contact hole conductor, and And the second groove conductor is arranged on the fourth contact hole conductor.
16. 16. The MRAM device of claim 11, wherein the second contact hole conductor comprises: A metal nitride layer; A barrier layer disposed on the metal nitride layer, and And a metal layer disposed on the barrier layer.
17. 17. The MRAM device of claim 11, wherein the trench conductor comprises: Barrier layer, and And a metal layer disposed on the barrier layer.

Description

Magnetoresistive random access memory and manufacturing method thereof Technical Field The invention relates to a magnetoresistive random access memory (Magnetoresistive Random Access Memory, MRAM) element and a method for manufacturing the same. Background As known, the Magnetic Resistance (MR) effect is an effect that the resistance of a material changes with the change of an applied magnetic field, and the physical quantity is defined by dividing the resistance difference with or without the magnetic field by the original resistance to represent the resistance change rate. Currently, the magneto-resistance effect has been successfully applied to hard disk production, and has important commercial application value. In addition, by utilizing the characteristic that giant magnetoresistance substances have different resistance values in different magnetization states, the Magnetic Random Access Memory (MRAM) can be manufactured, and has the advantage of continuously retaining stored data under the condition of no power. The magneto-resistive effect is also used in the field of magnetic field sensing (MAGNETIC FIELD sensor), such as electronic compass (electronic compass) components of a mobile phone, which are used with a global positioning system (global positioning system, GPS), to provide information about the mobile orientation of a user. Currently, various magnetic field sensing technologies are available on the market, such as anisotropic magnetoresistive (anisotropic magnetoresistance, AMR) sensing elements, giant Magnetoresistive (GMR) sensing elements, magnetic tunneling junction (magnetic tunneling junction, MTJ) sensing elements, and the like. However, the disadvantages of the prior art described above generally include more chip area, more expensive fabrication process, more power consumption, insufficient sensitivity, susceptibility to temperature variations, etc., and further improvements are necessary. Disclosure of Invention A method for fabricating a magnetoresistive random access memory (Magnetoresistive Random Access Memory, MRAM) device is disclosed, which comprises providing a substrate comprising an MRAM region and a logic region, forming a first inter-metal dielectric layer on the substrate, removing the first inter-metal dielectric layer by using a first patterning mask to form a first contact opening in the MRAM region and a second contact opening in the logic region, forming a metal nitride layer in the first contact opening and the second contact opening, removing a portion of the metal nitride layer and a portion of the first inter-metal dielectric layer in the logic region to form a trench opening, forming a metal layer in the first contact opening, the second contact opening and the trench opening to form a first metal interconnect in the MRAM region and a second metal interconnect in the logic region, and forming a magnetic tunnel junction (magnetic tunneling junction, MTJ) on the first metal interconnect. Another embodiment of the present invention discloses a Magnetoresistive Random Access Memory (MRAM) device, which mainly comprises a substrate comprising an MRAM region and a logic region, a first inter-metal dielectric layer disposed on the substrate, a first metal interconnect disposed in the first inter-metal dielectric layer of the MRAM region, a second metal interconnect disposed in the first inter-metal dielectric layer of the logic region, and a Magnetic Tunnel Junction (MTJ) disposed on the first metal interconnect. The first metal interconnect comprises a first contact hole conductor, the second metal interconnect comprises a second contact hole conductor and a trench conductor arranged on the second contact hole conductor, and the second contact hole conductor and the trench conductor comprise different materials. Drawings FIGS. 1-9 are schematic diagrams illustrating an embodiment of a method for fabricating an MRAM cell; FIG. 10 is a schematic diagram of an MRAM cell according to an embodiment of the invention. Symbol description 12 Substrate 14 MRAM region 16 Logic area 18 Interlayer dielectric layer 20 Metal interconnect structure 22 Metal interconnect structure 24 Inter-metal dielectric layer 26 Metal interconnect 28 Stop layer 30 Inter-metal dielectric layer 32 Metal interconnect 34 Barrier layer 36 Metal layer 38 Mtj stack structure 42 Lower electrode 44 Fixing layer 46 Barrier layer 48 Free layer 50 Upper electrode 52:MTJ 54 Cover layer 56 Spacer wall 58 Inter-metal dielectric layer 60 Barrier layer 62 Metal layer 64 Metal interconnect 66 Stop layer 72 Stop layer 74 Stop layer 76 Intermetal dielectric layer 78 Hard mask 80 Metal nitride layer 82 Cover layer 84 Patterning mask 88 Patterning mask 98 Contact hole opening 100 Contact hole opening 102 Trench opening 104 Barrier layer 106 Metal layer 108 Metal interconnect 110 Contact hole conductor 112 Contact hole conductor 114 Trench conductor Detailed Description Referring to fig. 1 to 9, fig. 1 to 9 are sche