Search

CN-122003099-A - Spintronic device, preparation method and application thereof

CN122003099ACN 122003099 ACN122003099 ACN 122003099ACN-122003099-A

Abstract

The invention discloses a spin electronic device, a preparation method and application thereof, wherein the preparation method comprises the following steps of 1, depositing a Pt film layer on the surface of a substrate under a vacuum condition, then carrying out in-situ argon plasma treatment on the Pt film layer, and 2, sequentially depositing a Py ferromagnetic layer and a SiN2 layer on the surface of the Pt film treated in the step 1. The method has the advantages of simple process and strong compatibility, the prepared spin electronic device has higher spin transparency and spin orbit torque efficiency, the defects caused by introducing an additional structure or changing the film layer structure are effectively avoided, and the SOT efficiency is obviously improved.

Inventors

  • LIANG SHIHENG
  • CHEN SHIWEI
  • Gu Nifei
  • LU SHA
  • Xiang Chifan
  • FEI LI
  • YU BAISHI

Assignees

  • 湖北大学
  • 汉江国家实验室

Dates

Publication Date
20260508
Application Date
20251231

Claims (9)

  1. 1. A method of fabricating an electronic device for improving spin orbit torque efficiency, comprising the steps of: step 1, depositing a Pt film layer on the surface of a substrate under a vacuum condition, and performing in-situ argon plasma treatment on the Pt film layer; and 2, sequentially depositing a Py ferromagnetic layer and a SiN 2 layer on the surface of the Pt film treated in the step 1.
  2. 2. The method for manufacturing an electronic device for improving spin-orbit torque efficiency according to claim 1, wherein the vacuum degree in steps 1 and 2 is lower than 。
  3. 3. The method of manufacturing an electronic device for improving spin-orbit torque efficiency according to claim 1, wherein the thickness of the Pt thin film layer deposited in step 1 is 3-6nm.
  4. 4. The method for manufacturing an electronic device for improving spin orbit torque efficiency according to claim 1, wherein in step 1, ar gas is introduced, and plasma treatment is performed by applying 26 to 40W power and 1 to 6 mTorr gas pressure.
  5. 5. The method of claim 1, wherein the in-situ argon plasma treatment time t p is 5-20s.
  6. 6. The method for manufacturing an electronic device for improving spin-orbit torque efficiency according to claim 1, wherein the Py layer deposition thickness in step 2 is 6-8nm and the sin 2 layer deposition thickness is 3-5nm.
  7. 7. A spintronic device manufactured by the method of manufacturing an electronic device for improving spin orbit torque efficiency according to any one of claims 1-6.
  8. 8. The spintronic device of claim 1, characterized in that its interface spin transparency T int is not lower than 0.9 and spin orbit torque efficiency ζ SOT is not lower than 0.1.
  9. 9. Use of a spintronic device according to any of the claims 7 or 8, characterized in that the spintronic device is used for a spin orbit torque driven magnetic memory or logic device.

Description

Spintronic device, preparation method and application thereof Technical Field The invention belongs to the technical field of spin electronic devices, and particularly relates to a spin electronic device for improving spin orbit torque efficiency, a preparation method and application thereof. Background Spin-orbit torque (SOT) is the interaction between spin current generated by a spin source layer and the magnetization of an adjacent magnetic layer, allowing for a highly efficient longitudinal magnetization direction, and this technology has broad application prospects in next-generation nonvolatile memories and logic devices due to its highly efficient, low-power-consumption magnetic moment manipulation capability, the efficiency being generally expressed as: Wherein θ SH is the spin hall angle, and T int is the interface spin transparency. While early studies of spin-orbit torque were based on heavy metal Pt/Co heterostructures, pt exhibited a relatively low spin hall angle. Thus, in view of the role of θ SH in SOT-related studies, finding new materials with high θ SH is naturally an improvement compared to conventional heavy metals Such as topological insulators, transition metal dichalcogenides, oxide interfaces, etc. However, these alternative materials generally involve complicated manufacturing processes, and have problems of poor thermal/chemical stability and high longitudinal resistivity, limiting their practical application. In recent years, the spin current transmission efficiency T int at the nonmagnetic/ferromagnetic (NM/FM) interface was controlled in determiningAspects also play a central role. Measured in NM/FM bilayer systems when interface limited spin current transportCan be significantly lower than the theoretical prediction value even for NM layers with larger theta SH. Therefore, interface engineering is an effective way to raise T int, such as inserting ultra-thin metal spacers or oxide layers, but these methods introduce additional complexity, current splitting, and spin-decay issues. Therefore, the development of a simple, controllable interface optimization method without an insertion layer has important significance for promoting the development of SOT devices. Disclosure of Invention An object of the present invention is to provide a method for manufacturing an electronic device that improves spin orbit torque efficiency, which is simple in process and strong in compatibility, the prepared spin electronic device has higher spin transparency and spin orbit torque efficiency, effectively avoids the defects caused by introducing an additional structure or changing the structure of a film layer, and remarkably improves SOT efficiency. In order to solve the technical problems, the invention adopts the following technical scheme: a method of fabricating an electronic device for improving spin-orbit torque efficiency, comprising the steps of: step 1, depositing a Pt film layer on the surface of a substrate under a vacuum condition, and performing in-situ argon plasma treatment on the Pt film layer; and 2, sequentially depositing a Py ferromagnetic layer and a SiN 2 layer on the surface of the Pt film treated in the step 1. Further, in steps 1 and 2, the vacuum degree is lower than。 Further, the thickness of the Pt film layer deposited in the step 1 is 3-6nm. In the step 1, ar gas is introduced, and 26-40W power and 1-6 mTorr air pressure are applied to carry out plasma treatment. Further, the in-situ argon plasma treatment time t p in step 1 is 5-20s. Further, in the step 2, the deposition thickness of the Py layer is 6-8nm, and the deposition thickness of the SiN 2 layer is 3-5nm. A spintronic device manufactured according to the above-described electronic device manufacturing method for improving spin orbit torque efficiency. Further, the spin transparency T int of the interface of the spintronic device is not less than 0.9, spin orbit torque efficiencyNot less than 0.1. Use of a spintronic device according to the above for a spin orbit torque driven magnetic memory or logic device. Compared with the prior art, the invention has the beneficial effects that: Compared with the traditional interface engineering method, the interface optimization method without an insertion layer can treat a non-magnetic/ferromagnetic interface in situ, namely, argon plasma treatment is carried out on a Pt film layer, so that the spin transparency of the interface is remarkably improved, SOT efficiency is remarkably improved, and the interface optimization method reaches a larger value under the optimization treatment time, and importantly, alternative mechanisms such as resistivity, thickness or saturation magnetization are eliminated, the improvement of the spin transparency is confirmed to be mainly caused by interface modification, interface roughness is reduced after plasma treatment, interface spin orbit coupling is weakened, spin memory loss is further inhibited, spin current generated by a spin