CN-122003101-A - Mechanical memristor and preparation method thereof

CN122003101ACN 122003101 ACN122003101 ACN 122003101ACN-122003101-A

Abstract

The invention discloses a mechanical memristor and a preparation method thereof, wherein the mechanical memristor comprises a gold film layer, a monocrystalline graphite layer and a substrate layer which are sequentially stacked from top to bottom, two identical monocrystalline graphite layers are symmetrically arranged at the upper ends of the substrate layer, a lower channel is formed in the middle area of the two monocrystalline graphite layers, and the gold film layers respectively span the upper ends of the monocrystalline graphite layers at two sides. After the circuit of the mechanical memristor is electrified, the gold film layer can move along the extending direction of the lower channel under the action of a magnetic field and is static after finally reaching an equilibrium state under the action of the friction force, and as the contact area between the gold film layer and the monocrystalline graphite layer is changed after the gold film layer is shifted, the resistance value of the mechanical memristor is correspondingly changed, so that the signal recording is realized, and the controllable resistance change and history electric signal memory function can be realized through the reversible process.

Inventors

WU TIELIN
CHEN WEIPENG
NIE JINHUI
XIANG XIAOJIAN
ZHENG QUANSHUI

Assignees

深圳清华大学研究院
清华大学深圳国际研究生院

Dates

Publication Date: 20260508
Application Date: 20260130

Claims (10)

1. A mechanical memristor, which comprises a first substrate and a second substrate, characterized by comprising the following steps: a gold film layer, a monocrystalline graphite layer and a substrate layer which are sequentially laminated from top to bottom; the two same single crystal graphite layers are symmetrically arranged at the upper ends of the substrate layers, and a lower channel is formed in the middle area of the two single crystal graphite layers; The gold film layers are respectively arranged at the upper ends of the monocrystalline graphite layers at two sides in a crossing way, the length direction of the gold film layers is perpendicular to the extending direction of the lower channel, and an upper channel is arranged at the lower end of the gold film layers at the position corresponding to the lower channel; The gold film layer, the monocrystalline graphite layer and the substrate layer are placed in a magnetic environment, and the two monocrystalline graphite layers are respectively connected with two poles of a power supply to form a loop.
2. The mechanical memristor of claim 1, wherein the gold film layer has the same contact area as the upper ends of the two single crystal graphite layers.
3. The mechanical memristor of claim 2, wherein the gold film layer has a rectangular or circular shape with bilateral symmetry in cross-section.
4. The mechanical memristor of claim 3, wherein the lower channel is formed on the inner sides of the two opposite single crystal graphite layers, and the cross-sectional shape of the inner sides of the two opposite single crystal graphite layers is an inclined plane or an equidistant step shape.
5. The mechanical memristor of claim 1, wherein the gold film layer has a thickness of 100-500nm, a length of 10-30 μm, and a width of 2-10 μm.
6. The mechanical memristor of claim 1, wherein the single crystal graphite layer has a thickness of 500-2000nm.
7. The mechanical memristor of claim 1, wherein the bottom of the substrate layer is provided with a permanent magnet that provides the gold film layer with a magnetic field perpendicular thereto.
8. The mechanical memristor of claim 1, wherein the substrate layer is silicon dioxide or aluminum oxide.
9. The preparation method of the mechanical memristor is characterized by comprising the following steps: S1, depositing a gold film layer on the surface of a monocrystalline graphite layer by using a silicon dioxide substrate layer with a monocrystalline graphite layer pre-grown as a basic template and adopting a thermal evaporation technology in an environment of 1000 ℃ of a vacuum thermal evaporation cavity to form a first laminated structure; s2, after the gold film layer is deposited, uniformly spin-coating photoresist on the surface of the gold film layer to form a photoresist layer, and carrying out graphical processing on the photoresist layer through photoetching and etching processes to obtain a second laminated structure with a lower channel; S3, depositing a first sacrificial layer on the surface of the photoresist layer and depositing a second sacrificial layer on the surface of the lower channel by a magnetron sputtering mode to obtain a third laminated structure; s4, cleaning the third laminated structure by using photoresist stripping liquid, and removing the first sacrificial layer and the photoresist layer on the surface of the gold film layer to obtain a fourth laminated structure; S5, performing secondary gold deposition on the gold film layer and the second sacrificial layer on the surface of the fourth laminated structure by adopting a thermal evaporation technology under the environment of 1000 ℃ of a vacuum thermal evaporation cavity to obtain a fifth laminated structure; s6, processing the surface of the fifth laminated structure according to a target layout through an etching process to obtain a plurality of first bridge structures which are mutually insulated and have independent functions; s7, removing the second sacrificial layer on the first bridging structure by using a wet process to obtain a suspended second bridging structure; S8, uniformly spin-coating photoresist on the upper surface of the second bridging structure again to form a photoresist layer, removing the photoresist layer on the surface of the gold film layer through a photoetching process, etching the gold film layer through a wet etching process to form a sliding block type gold film layer, wherein the gold film layer is respectively spanned on the upper ends of the monocrystalline graphite layers on two sides, the length direction of the gold film layer is perpendicular to the extending direction of the lower channel, and the middle area is a suspended upper channel and lower channel to obtain a basic configuration of the mechanical memristor; and S9, adding a permanent magnet at the bottom of the basic configuration, and connecting the monocrystalline graphite layers at two sides with an external power supply loop at the same time, thereby obtaining the mechanical memristor.
10. The method for manufacturing a mechanical memristor according to claim 9, wherein in step S6, the processing the surface of the fifth stacked structure according to the target layout by an etching process to obtain a plurality of first bridge structures which are mutually insulated and have independent functions includes: respectively determining the dividing line of each first bridging structure according to the target layout; uniformly spin-coating photoresist on the surface of the fifth laminated structure to form a photoresist layer; etching the position of the boundary line through an ion beam etching process to remove the gold film layer at the position of the boundary line; And etching the boundary line through a reactive ion etching process to remove the monocrystalline graphite layer at the boundary line, thereby obtaining a plurality of first bridging structures which are mutually insulated and have independent functions.

Description

Mechanical memristor and preparation method thereof Technical Field The invention relates to the technical field of storage equipment, in particular to a mechanical memristor and a preparation method thereof. Background Van der Waals layered materials rapidly become an international leading edge field due to excellent mechanical, thermal, electrical and other properties, and have great application potential in the fields of nanocomposite materials, flexible electronic devices, micro-electromechanical systems (MEMS) and the like. In particular, the self-super-sliding interface formed by Van der Waals materials has the technical characteristics of extremely low friction and zero abrasion in the micro-nano scale, and is hopeful to realize the in-plane sliding in the micro-nano scale. The current memristor structure is difficult to realize the ultra-long-time stable storage of high-density data, so that the mechanical memristor is needed to solve the problems of the ultra-long-time storage of large-scale static cold data and the multi-value storage in the simulated nerve morphology calculation. Disclosure of Invention The present invention has been made in view of the above problems, and has as its object to provide a mechanical memristor and a method of manufacturing the same that overcomes or at least partially solves the above problems. Other features and advantages of the invention will be apparent from the following detailed description, or may be learned by the practice of the invention. According to a first aspect of the embodiment of the invention, a mechanical memristor is provided, which comprises a gold film layer, a monocrystalline graphite layer and a substrate layer which are sequentially laminated from top to bottom; the two same single crystal graphite layers are symmetrically arranged at the upper ends of the substrate layers, and a lower channel is formed in the middle area of the two single crystal graphite layers; The gold film layers are respectively arranged at the upper ends of the monocrystalline graphite layers at two sides in a crossing way, the length direction of the gold film layers is perpendicular to the extending direction of the lower channel, and an upper channel is arranged at the lower end of the gold film layers at the position corresponding to the lower channel; The gold film layer, the monocrystalline graphite layer and the substrate layer are placed in a magnetic environment, and the two monocrystalline graphite layers are respectively connected with two poles of a power supply to form a loop. In some embodiments of the invention, the gold film layer has the same contact area as the upper ends of the two single crystal graphite layers. In some embodiments of the present invention, the gold film layer has a rectangular or circular shape with bilateral symmetry in cross-section. In some embodiments of the present invention, the lower channel is formed on the inner sides of two opposite single crystal graphite layers, and the cross-sectional shape of the inner sides of two opposite single crystal graphite layers is an inclined plane or an equidistant step shape. In some embodiments of the invention, the gold film layer has a thickness of 100-500nm, a length of 10-30 μm, and a width of 2-10 μm. In some embodiments of the invention, the single crystal graphite layer has a thickness of 500-2000nm. In some embodiments of the invention, a permanent magnet is arranged at the bottom of the substrate layer, and the permanent magnet provides a magnetic field perpendicular to the gold film layer. In some embodiments of the present invention, the substrate layer is made of silicon dioxide or aluminum oxide. According to a second aspect of an embodiment of the present invention, there is provided a method for manufacturing a mechanical memristor, including the steps of: S1, depositing a gold film layer on the surface of a monocrystalline graphite layer by using a silicon dioxide substrate layer with a monocrystalline graphite layer pre-grown as a basic template and adopting a thermal evaporation technology in an environment of 1000 ℃ of a vacuum thermal evaporation cavity to form a first laminated structure; s2, after the gold film layer is deposited, uniformly spin-coating photoresist on the surface of the gold film layer to form a photoresist layer, and carrying out graphical processing on the photoresist layer through photoetching and etching processes to obtain a second laminated structure with a lower channel; S3, depositing a first sacrificial layer on the surface of the photoresist layer and depositing a second sacrificial layer on the surface of the lower channel by a magnetron sputtering mode to obtain a third laminated structure; s4, cleaning the third laminated structure by using photoresist stripping liquid, and removing the first sacrificial layer and the photoresist layer on the surface of the gold film layer to obtain a fourth laminated structure; S5, performing secondary