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CN-122003102-A - Metastable state two-dimensional material device and preparation method thereof

CN122003102ACN 122003102 ACN122003102 ACN 122003102ACN-122003102-A

Abstract

The application relates to the technical field of devices, in particular to a metastable state two-dimensional material device and a preparation method thereof. The method comprises the steps of carrying out patterning laser cutting treatment on a polyethylene terephthalate film to obtain a mask plate, arranging a substrate on one side surface of the mask plate, arranging a metastable two-dimensional material layer on part of the surface of one side of the substrate facing the mask plate, wherein the metastable two-dimensional material layer is positioned in a orthographic projection area of a hollowed-out area of the mask plate on the substrate to obtain an intermediate, carrying out vapor deposition treatment on the intermediate, enabling vapor deposition gas to pass through the hollowed-out area of the mask plate, and depositing the vapor deposition gas on the substrate to form an electrode to obtain the metastable two-dimensional material device. The method is based on laser cutting of the polyethylene terephthalate film, a device which is simple to prepare, low in cost and high in precision is successfully obtained, and electrodes are directly evaporated on the surface of the metastable two-dimensional material in a mask positioning mode, so that device manufacturing is realized, a complex electron beam exposure process manufacturing process is avoided, and the measurement of the intrinsic electrical properties of the metastable two-dimensional material is realized.

Inventors

  • YANG CHENKAI
  • LI JING
  • JIAO LIYING

Assignees

  • 清华大学

Dates

Publication Date
20260508
Application Date
20251215

Claims (10)

  1. 1. A method of making a metastable two-dimensional material device, the method comprising the steps of: Carrying out patterning laser cutting treatment on the polyethylene terephthalate film to obtain a mask plate; A substrate is arranged on one side surface of the mask plate, a metastable state two-dimensional material layer is arranged on a part of the surface of the substrate, facing one side of the mask plate, of the substrate, and the metastable state two-dimensional material layer is positioned in a orthographic projection area of a hollowed-out area of the mask plate on the substrate to obtain an intermediate; and carrying out evaporation treatment on the intermediate, enabling evaporation gas to pass through the hollowed-out area of the mask plate, and depositing on the substrate to form an electrode, thereby obtaining the metastable state two-dimensional material device.
  2. 2. The method of claim 1, wherein the hollowed-out area comprises a first hollowed-out area and a plurality of second hollowed-out areas radially arranged with the first hollowed-out area as a center and connected with the first hollowed-out area, and the metastable two-dimensional material layer is located in a forward projection area of the first hollowed-out area of the mask plate on the substrate.
  3. 3. The method of claim 1, wherein the material of the metastable two-dimensional material comprises at least one of FeSe, feS x Se y Te 1-x-y 、CuFeTe 2 .
  4. 4. The method of claim 1, wherein the substrate comprises at least one of mica, sapphire, si, siO 2 .
  5. 5. The method according to any one of claims 1 to 4, wherein the component of the vapor deposition gas includes at least one of Au and Ag.
  6. 6. The method of any one of claims 1-4, further comprising securing the substrate to a side surface of the mask plate with an adhesive.
  7. 7. The method of claim 6, wherein the adhesive comprises polymethyl methacrylate.
  8. 8. The method of any of claims 1-4, wherein the patterned laser cutting process has a minimum width of 1 μιη to 2 μιη; Optionally, the method further comprises performing the patterned laser cutting process with a laser micro cutting system.
  9. 9. A metastable two-dimensional material device made according to the method of any one of claims 1-8.
  10. 10. The metastable two-dimensional material device of claim 9, wherein the metastable two-dimensional material device comprises at least one of a hall six electrode device, a hall four electrode device, a standard four electrode device, a two electrode device.

Description

Metastable state two-dimensional material device and preparation method thereof Technical Field The application relates to the technical field of devices, in particular to a metastable state two-dimensional material device and a preparation method thereof. Background In recent years, researches on intrinsic electrical properties of metastable two-dimensional materials having excellent physical properties have been receiving a great deal of attention. Taking two-dimensional tetragonal phase FeSe as an example, the metastable material has excellent superconducting performance and superconducting adjustability. However, because of its metastable nature, it is difficult to directly manufacture devices by processes such as electron beam lithography, so as to test its intrinsic superconductivity, thus greatly limiting the study of the intrinsic electrical properties of such metastable materials. The in-situ mask plate device manufacturing method can greatly avoid the interference on the quality of the material on the basis of not undergoing a series of process operations such as electron beam lithography and the like, thereby realizing the device manufacturing and the research on the intrinsic physical properties of the metastable state material. However, the existing mask plate manufacturing process often has the problems of higher equipment and higher cost, and the mask plate with lower precision is low in cost, but the mask plate and the device are difficult to manufacture for the two-dimensional material sample with smaller size due to the limitation of precision. Therefore, development of a mask manufacturing process with high precision and low cost is needed, and the method has important significance in promoting research of intrinsic electrical properties of two-dimensional materials. Disclosure of Invention The present application aims to solve one of the technical problems in the related art at least to some extent. To this end, the application provides a metastable two-dimensional material device and a method of making the same. The method is based on laser cutting of polyethylene terephthalate (PET) films, a device which is simple to prepare, low in cost and high in precision is successfully obtained, and electrodes are directly evaporated on the surface of the metastable two-dimensional material in a mask positioning mode, so that device manufacturing is realized, a complex electron beam exposure process manufacturing process is avoided, and the measurement of the intrinsic electrical properties of the metastable two-dimensional material is realized. To this end, a first aspect of the present application provides a method of preparing a metastable two-dimensional material device, the method comprising the steps of: Carrying out patterning laser cutting treatment on the polyethylene terephthalate film to obtain a mask plate; A substrate is arranged on one side surface of the mask plate, a metastable state two-dimensional material layer is arranged on a part of the surface of the substrate, facing one side of the mask plate, of the substrate, and the metastable state two-dimensional material layer is positioned in a orthographic projection area of a hollowed-out area of the mask plate on the substrate to obtain an intermediate; and carrying out evaporation treatment on the intermediate, enabling evaporation gas to pass through the hollowed-out area of the mask plate, and depositing on the substrate to form an electrode, thereby obtaining the metastable state two-dimensional material device. The method provided by the application can avoid the interference to the quality of the metastable two-dimensional material, ensures extremely high precision of the device, and has a wide application prospect, and the cost is only 1% -2% of that of commercial mask plates on the market. According to the embodiment of the application, the hollowed-out area comprises a first hollowed-out area and a plurality of second hollowed-out areas which are radially distributed by taking the first hollowed-out area as a center and are connected with the first hollowed-out area, and the metastable state two-dimensional material layer is positioned in a forward projection area of the first hollowed-out area of the mask plate on the substrate. Therefore, the device with the metastable two-dimensional material as the center and the plurality of electrode structures extending radially can be formed, and the electrical performance of the device is enhanced. The radial electrode structure can optimize electric field distribution, so that a transmission path of carriers in the two-dimensional material is more direct, scattering and obstruction of the carriers in the transmission process are reduced, carrier mobility is improved, and the electrical performance of the device is improved. According to an embodiment of the present application, the metastable two-dimensional material includes at least one of FeSe and FeS xSeyTe1-x-y、CuFeTe2. T