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CN-122003107-A - Substrate processing method and substrate processing apparatus

CN122003107ACN 122003107 ACN122003107 ACN 122003107ACN-122003107-A

Abstract

The present disclosure relates to a substrate processing method and a substrate processing apparatus that improve uniformity in etching processing of a polysilicon film formed on a substrate. The substrate processing method according to one embodiment of the present disclosure includes a step of adding a silicic acid compound to an alkaline processing liquid to generate an etching liquid, and a step of etching a polysilicon film formed on a substrate with the etching liquid.

Inventors

  • ABE REIKO
  • Inoki Yuta

Assignees

  • 东京毅力科创株式会社

Dates

Publication Date
20260508
Application Date
20251024
Priority Date
20241105

Claims (17)

  1. 1. A substrate processing method comprising the steps of: adding a silicic acid compound to the alkaline treatment liquid to produce an etching liquid, and And etching the polysilicon film formed on the substrate by using the etching solution.
  2. 2. The substrate processing method according to claim 1, wherein, The polysilicon film is located on an inner surface of a recess formed on a surface of the substrate, In the step of etching, at least a part of the polysilicon film located on the inner surface of the recess is etched.
  3. 3. The substrate processing method according to claim 1 or 2, wherein, The silicic acid compound is colloidal silica.
  4. 4. The substrate processing method according to claim 1 or 2, wherein, The silicic acid compound is at least one of sodium silicate, potassium silicate and calcium silicate.
  5. 5. The substrate processing method according to claim 1 or 2, wherein, The treatment liquid is diluted ammonia water, SC1 which is a mixed liquid of ammonia water and hydrogen peroxide water, NC2 which is a mixed liquid of choline aqueous solution and hydrogen peroxide water, or TMAH which is tetramethyl ammonium hydroxide.
  6. 6. A substrate processing apparatus is provided with: A processing tank for immersing a batch composed of one or a plurality of substrates in an etching solution obtained by adding a silicic acid compound to an alkaline processing solution to perform etching processing; a treatment liquid supply unit that supplies the treatment liquid to the treatment tank; A silicic acid supply unit that supplies the silicic acid compound to the treatment tank; A concentration measuring unit for measuring the concentration of the components of the etching solution stored in the processing tank; a control part for controlling each part, and And a storage unit that stores correlation data that stores a correlation between a concentration of the silicic acid compound in the etching solution in the processing bath and an etching rate of a polysilicon film formed on the substrate.
  7. 7. The substrate processing apparatus according to claim 6, wherein, The control unit adjusts the amount of the silicic acid compound supplied to the processing tank based on the composition of the batch to be subjected to the etching process and the related data.
  8. 8. The substrate processing apparatus according to claim 7, wherein, The control unit supplies the silicic acid compound to the processing tank before the etching process of the batch for which the etching process is scheduled.
  9. 9. The substrate processing apparatus according to claim 8, wherein, The control unit is configured to replace at least a part of the etching solution in the processing tank before the etching process of the batch when it is determined that the concentration of the silicic acid compound in the etching solution in the processing tank after the etching process of the batch is scheduled to be performed reaches a predetermined threshold value.
  10. 10. The substrate processing apparatus according to any one of claims 7 to 9, wherein, The control unit supplies the silicic acid compound to the processing tank during the etching process of the batch.
  11. 11. The substrate processing apparatus according to claim 10, wherein, The control unit changes at least a part of the etching liquid in the processing tank during the etching process of the batch when the concentration of the silicic acid compound in the etching liquid in the processing tank reaches a predetermined threshold value.
  12. 12. The substrate processing apparatus according to any one of claims 7 to 9, wherein, The correlation data includes a standard curve representing a correlation between a concentration of the silicic acid compound of the etching liquid in the processing bath and an etching rate of a polysilicon film formed on the substrate.
  13. 13. The substrate processing apparatus according to any one of claims 7 to 9, wherein, The control unit adjusts the time of the etching process performed on the batch based on the concentration of the silicic acid compound in the processing tank measured by the concentration measuring unit.
  14. 14. The substrate processing apparatus according to any one of claims 7 to 9, wherein, The concentration sensor of the concentration measuring unit for measuring the concentration of the silicic acid compound in the etching solution in the processing tank is a microwave plasma atomic emission spectrometry device, a high-frequency inductively coupled plasma emission spectrometry device, or an inductively coupled high-frequency plasma mass spectrometry device.
  15. 15. The substrate processing apparatus according to any one of claims 7 to 9, wherein, The treatment liquid is diluted ammonia water, SC1, NC2 or TMAH.
  16. 16. The substrate processing apparatus according to claim 15, wherein, The control unit controls the operation of the treatment liquid supply unit so that the concentration of the treatment liquid in the treatment tank is within a predetermined concentration range.
  17. 17. The substrate processing apparatus according to any one of claims 7 to 9, wherein, The temperature of the etching solution is 40-80 ℃ when the batch is etched.

Description

Substrate processing method and substrate processing apparatus Technical Field The disclosed embodiments relate to a substrate processing method and a substrate processing apparatus. Background Conventionally, there is known a technique of etching a polysilicon film formed on a substrate by using an alkaline processing liquid (see patent document 1). Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2022-41076 Disclosure of Invention Problems to be solved by the invention The present disclosure provides a technique capable of improving uniformity in etching treatment of a polysilicon film formed on a substrate. Solution for solving the problem The substrate processing method according to one embodiment of the present disclosure includes a step of adding a silicic acid compound to an alkaline processing liquid to generate an etching liquid, and a step of etching a polysilicon film formed on a substrate using the etching liquid. ADVANTAGEOUS EFFECTS OF INVENTION According to the present disclosure, uniformity in etching treatment of a polysilicon film formed on a substrate can be improved. The effects described herein are not necessarily limited, and any effects described in the present disclosure may be used. Drawings Fig. 1 is a schematic block diagram showing a configuration of a substrate processing system according to an embodiment. Fig. 2 is an enlarged cross-sectional view showing an example of a surface structure of a wafer according to the embodiment. Fig. 3 is a schematic block diagram showing a configuration of an etching processing apparatus according to the embodiment. Fig. 4 is a flowchart showing an example of a procedure of a control process executed by the substrate processing system according to the embodiment. Fig. 5 is a diagram showing an example of a transition of the concentration of the silicic acid compound in the processing tank in the etching process according to the embodiment. Fig. 6 is a graph showing a relationship between the concentration of the silicic acid compound added to the etching liquid and the BT ratio. Fig. 7 is a diagram showing another example of the transition of the concentration of the silicic acid compound in the treatment tank in the etching treatment according to the embodiment. Fig. 8 is a diagram showing another example of the transition of the concentration of the silicic acid compound in the treatment tank in the etching treatment according to the embodiment. Fig. 9 is a diagram showing another example of the transition of the concentration of the silicic acid compound in the treatment tank in the etching treatment according to the embodiment. Fig. 10 is a diagram showing another example of the transition of the concentration of the silicic acid compound in the treatment tank in the etching treatment according to the embodiment. Fig. 11 is a flowchart showing another example of the procedure of the control process performed by the substrate processing system according to the embodiment. Detailed Description Embodiments of a substrate processing method and a substrate processing apparatus according to the present disclosure will be described in detail below with reference to the accompanying drawings. Further, the present disclosure is not limited by the embodiments shown below. Note that the drawings are schematic, and the relationship between the dimensions of each element, the ratio of each element, and the like may be different from actual ones. Further, the drawings may include portions having different dimensional relationships and ratios. Conventionally, a technique for etching a polysilicon film formed on a substrate by using an alkaline processing liquid has been known. However, in the above-described conventional technique, there are cases where the difference between the etching amount of the polysilicon film formed at the opening side of the hole of the substrate and the etching amount of the polysilicon film at the bottom side of the hole is large. Accordingly, it is desired to realize a technique capable of improving uniformity in etching treatment of a polysilicon film formed on a substrate, for example, uniformity in etching amount in a depth direction of a hole formed on the substrate, by overcoming the above-described problems. < Structure of substrate processing System > First, a configuration of a substrate processing system 1 according to an embodiment will be described with reference to fig. 1 and 2. Fig. 1 is a schematic block diagram showing a configuration of a substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus. As shown in fig. 1, a substrate processing system 1 according to the embodiment includes a carrier loading/unloading section 2, a lot forming section 3, a lot loading section 4, a lot transporting section 5, a lot processing section 6, and a control device 7. The carrier loading/unloadi