CN-122003110-A - Surface treatment process of metal coating of semiconductor device

CN122003110ACN 122003110 ACN122003110 ACN 122003110ACN-122003110-A

Abstract

The invention discloses a surface treatment process of a metal coating of a semiconductor device, which aims to provide a surface treatment process of a metal coating of a semiconductor device, which can not only eliminate foreign matters attached to the metal coating of the surface of the semiconductor device, but also increase the roughness of the metal coating of the surface of the semiconductor device, thereby improving the surface adhesive force of the semiconductor device and ensuring that the semiconductor device can be firmly adhered to the surface of a required product. The method comprises the steps of firstly cleaning a semiconductor device by adopting water-based cleaning liquid, then drying the semiconductor device, secondly fixing the semiconductor device on a jig, thirdly cleaning by adopting laser to scan the surface of a metal coating of the semiconductor device, and fourthly blowing air to the surface of the metal coating of the semiconductor device to clean foreign matters on the surface of the metal coating of the semiconductor device after laser cleaning.

Inventors

Meng Fangshi
BAO DONGSHENG

Assignees

浙江先导热电科技股份有限公司

Dates

Publication Date: 20260508
Application Date: 20251028

Claims (10)

1. The surface treatment process of the metal coating of the semiconductor device is characterized by comprising the following steps of: Firstly, cleaning the semiconductor device by adopting water-based cleaning liquid, and then drying the semiconductor device; step two, fixing the semiconductor device on the jig; step three, cleaning by laser, and sweeping the surface of a metal coating of the semiconductor device by using the laser; And fourthly, blowing air to the surface of the metal coating of the semiconductor device, and cleaning foreign matters on the surface of the metal coating of the semiconductor device after laser cleaning.
2. The surface treatment process of a metal plating layer of a semiconductor device according to claim 1, wherein the laser light source used in the third step is UV light.
3. A surface treatment process for a metal coating of a semiconductor device according to claim 2, wherein the UV light has a laser pulse width of 4-6ns, a frequency of 120-180KHZ and a power of 12-18W.
4. A surface treatment process for a metal plating layer of a semiconductor device according to claim 1,2 or 3, wherein the number of laser cleaning in the third step is 1 to 8, and one laser cleaning per sweep of the metal plating layer surface of the semiconductor device is defined as1 laser cleaning.
5. The surface treatment process of a metal plating layer of a semiconductor device according to claim 4, wherein the number of laser cleaning in the third step is 5 to 8.
6. A surface treatment process for a metal coating of a semiconductor device according to claim 3, wherein the number of laser cleaning in the third step is 6-10, one laser cleaning per sweep of the metal coating surface of the semiconductor device is defined as 1 laser cleaning, the power of UV light in the first to last laser cleaning is gradually reduced, and the laser pulse width is gradually increased.
7. A surface treatment process of a metal plating layer of a semiconductor device according to claim 1,2 or 3, wherein the jig is provided with at least one placement groove with an upward opening, and the semiconductor device is limited in the placement groove.
8. The surface treatment process of the metal coating of the semiconductor device according to claim 7, wherein the fixture is internally provided with a negative pressure chamber and negative pressure channels which are in one-to-one correspondence with the placing grooves, the negative pressure channels are connected with the bottom surfaces of the corresponding placing grooves and the negative pressure chamber, and the semiconductor device in the placing grooves is adsorbed and fixed on the bottom surfaces of the placing grooves.
9. The surface treatment process of a metal plating layer of a semiconductor device according to claim 8, further comprising a step five of releasing a negative pressure of the negative pressure chamber and then taking out the semiconductor device.
10. The surface treatment process of a metal plating layer of a semiconductor device according to claim 1,2 or 3, wherein the step of drying the semiconductor device is performed by removing water from the surface of the semiconductor device by blowing and then drying the semiconductor device.

Description

Surface treatment process of metal coating of semiconductor device Technical Field The invention relates to the technical field of surface treatment of semiconductor devices, in particular to a surface treatment process of a metal coating of a semiconductor device. Background During the production process of the semiconductor device, foreign matters such as fine glue spots and fine flux particles, which are difficult to remove, tend to exist on the surface of the semiconductor device. These foreign substances attached to the surface of the semiconductor device affect the cleanliness of the surface, thereby causing a decrease in the adhesion of the surface of the semiconductor device. Taking a semiconductor refrigeration sheet as an example, based on the Peltier effect, active refrigeration or heating is realized through direct current, and the semiconductor refrigeration sheet has the advantages of quick response, high temperature control precision (+ -0.1 ℃) and no mechanical vibration, and becomes a main scheme for temperature control of an optical module. The miniaturization (such as millimeter-sized thickness) and low power consumption characteristics of semiconductor refrigeration sheets are also in accordance with the trend of compact optical modules. The semiconductor refrigerating sheet is mainly formed by welding ceramic or aluminum nitride substrates and semiconductor materials (bismuth telluride) through solder paste. During soldering of semiconductor refrigerating chips, soldering flux in solder paste is volatilized through high-temperature reflow, so that particles in the semiconductor device remain after heating. On the other hand, after the reflow oven is used for a long time, a large amount of fine carbonized soldering flux exists in the cavity, the carbonized soldering flux floats and adheres to the surface of the semiconductor device under the action of hot air flow, and is difficult to remove after being cooled down, foreign matters adhered to the surface of the semiconductor device affect the cleanliness of the surface, so that the surface adhesion is reduced. In order to improve the cleanliness of the surface of the semiconductor device, a cleaning solution is generally used for cleaning the semiconductor device at present, but the cleaning mode has poor effect, such as fine glue points on the surface of the semiconductor device, fine soldering flux particles and other foreign matters which are difficult to remove, and is difficult to clean. For example, chinese patent publication No. CN115815187A, the invention provides an automatic cleaning system and method for semi-finished semiconductor refrigerating sheets, comprising an operation table, wherein the inner wall of the operation table is provided with a cleaning box, the upper end of the operation table is provided with a U-shaped seat, a rotatable long rotating shaft is arranged on the U-shaped seat, one side of the U-shaped seat is provided with a nozzle matched with a fixing frame, and the long rotating shaft can form a structure that the nozzle moves reciprocally along the Z-shaped track line on the upper end surface of the cleaning box when rotating, and the system can replace manual cleaning impurities, but has the same defects. Disclosure of Invention The invention aims to provide a surface treatment process of a metal coating of a semiconductor device, which can be used for deeply cleaning the metal coating of the surface of the semiconductor device, not only eliminating foreign matters (including tiny foreign matters which cannot be seen by naked eyes) attached to the metal coating of the surface of the semiconductor device, but also increasing the roughness of the surface of the metal coating of the surface of the semiconductor device, thereby improving the surface adhesion of the semiconductor device and enabling the semiconductor device to be firmly adhered to the surface of a required product. The technical scheme of the invention is as follows: a surface treatment process of a metal coating of a semiconductor device comprises the following steps: Firstly, cleaning the semiconductor device by adopting water-based cleaning liquid, and then drying the semiconductor device; step two, fixing the semiconductor device on the jig; step three, cleaning by laser, and sweeping the surface of a metal coating of the semiconductor device by using the laser; And fourthly, blowing air to the surface of the metal coating of the semiconductor device, and cleaning foreign matters on the surface of the metal coating of the semiconductor device after laser cleaning. The surface treatment process of the semiconductor device metal coating comprises the steps of firstly cleaning a semiconductor device by adopting a water-based cleaning liquid in the first step, cleaning the foreign matters attached to the surface of the semiconductor device, removing most of the foreign matters attached to the surface of the semiconductor device, then fixing