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CN-122003123-A - Secondary separation film tearing method and equipment for wafer for satellite solar cell

CN122003123ACN 122003123 ACN122003123 ACN 122003123ACN-122003123-A

Abstract

The invention discloses a secondary separation film tearing method and device for a wafer for a satellite solar cell. The method aims at a rigid silicon wafer and a flexible chip bonded by a pyrolytic film and a photolytic film, and comprises the steps of S1 layering the original wafer through pyrolysis, S2 judging the residual position of the pyrolytic film through an identification camera and conducting split-flow treatment, directly stripping and recycling if the film is left at the bottom of the chip, transferring the film to a material throwing mechanism through a second conveying mechanism if the film is left at the top of the silicon wafer, S3 conducting ultraviolet photolysis treatment on the chip, S4 stripping and recycling the photolytic film for the second time, and S5 collecting finished products. The equipment is matched with a carrying system consisting of pyrolysis, photolysis, cameras and a plurality of groups of precise screw rod modules. The invention solves the process problem caused by uncertain residual positions of the pyrolytic films through visual identification, protects the ultrathin flexible chip by vertical micro-stress stripping, realizes full-process automatic nondestructive film tearing, and remarkably improves the production efficiency and the yield.

Inventors

  • ZHANG KAI

Assignees

  • 韦森特(东莞)科技技术有限公司

Dates

Publication Date
20260508
Application Date
20260319

Claims (10)

  1. 1. The secondary separation and film tearing method of the wafer for the satellite solar cell is characterized in that the wafer raw sheet comprises a rigid silicon wafer and a flexible chip which are bonded together through a pyrolytic film and a photolytic film, and the method comprises the following steps: s1, pyrolysis treatment, namely moving the original piece to a pyrolysis mechanism (30) for pyrolysis treatment so as to laminate the rigid silicon piece and the flexible chip; S2, position judgment and diversion processing, namely visually identifying the bottom of the pyrolyzed flexible chip, and executing the following branch steps according to a judgment result: S2.1, if the pyrolysis film is left at the bottom of the flexible chip, moving the flexible chip to a throwing position, stripping and recovering the pyrolysis film at the bottom of the flexible chip, and then executing step S3; s2.2, if the pyrolysis film is not left at the bottom of the flexible chip, stripping and recycling the pyrolysis film left at the top of the silicon wafer at the pyrolysis mechanism (30), and executing a step S3 on the flexible chip; S3, photolysis treatment, namely moving the flexible chip without the pyrolytic film to a photolysis mechanism (21) for ultraviolet photolysis treatment; s4, stripping and recycling the photolysis film at the bottom of the flexible chip after photolysis treatment; s5, collecting finished products, namely moving the flexible chip after the membrane is peeled to a discharging mechanism (12) for collection.
  2. 2. The method according to claim 1, characterized in that before step S1 further comprises: The raw sheets are grabbed from the feeding mechanism (10) through the first conveying mechanism (14) and sent to the centering mechanism (20) for centering treatment; and step S5 is followed by recycling the residual silicon chips at the pyrolysis mechanism (30) into the feeding mechanism (10) through the first carrying mechanism (14).
  3. 3. The method according to claim 1, wherein the process of peeling the pyrolytic film in the step S2.1 comprises the steps that a third carrying mechanism (60) drives a third sucker (61) with the flexible chip adsorbed to descend, the flexible chip is placed on a throwing sucker (43) of a throwing mechanism (40), the throwing sucker (43) adsorbs the pyrolytic film, and the third sucker (61) keeps adsorbing the flexible chip and ascends to separate the pyrolytic film from the flexible chip.
  4. 4. The method according to claim 1, wherein the process of recovering the pyrolytic film in the step S2.2 comprises the steps that the pyrolytic mechanism (30) adsorbs and fixes the silicon wafer, the second sucker (51) of the second conveying mechanism (50) adsorbs and peels off the pyrolytic film on the top of the silicon wafer upwards, and the second conveying mechanism (50) transfers the pyrolytic film to the throwing sucker (43) of the throwing mechanism (40) for subsequent recovery.
  5. 5. The method according to claim 3 or 4, wherein the action of the throwing mechanism (40) for recovering the membrane comprises the steps of rotating the executing piece (42) to turn over a preset angle to enable the membrane to face the suction inlet of the waste membrane recovery device (44) after the membrane is absorbed by the throwing sucker (43), releasing the absorption force, and sucking the membrane by utilizing the negative pressure generated by the waste membrane recovery device (44).
  6. 6. A secondary separation dyestripping apparatus for carrying out the method of any one of claims 1-5, comprising: The pyrolysis mechanism (30) and the photolysis mechanism (21) are respectively used for carrying out pyrolysis and photolysis treatment on the original sheet; an identification camera (22) for determining a residual position of the pyrolytic film; The throwing mechanism (40) comprises a throwing sucker (43) and a waste film recovery device (44) and is used for stripping and collecting the waste film; The conveying system comprises a second conveying mechanism (50) and a third conveying mechanism (60), wherein the third conveying mechanism (60) is used for transferring flexible chips among pyrolysis, detection, photolysis and discharging procedures.
  7. 7. The device according to claim 6, characterized in that the pyrolysis mechanism (30) comprises a heating plate (31), and a limiting guide block (32) for limiting the original sheet is arranged at the top of the heating plate (31); The surface of the heating plate (31) is provided with adsorption holes (33), and the adsorption holes (33) are connected with a negative pressure pipe (34) to fix the rigid silicon wafer in the stripping process.
  8. 8. The apparatus according to claim 6, wherein the slinger mechanism (40) further comprises a slinger longitudinal movement actuator (41) and a rotary actuator (42) for driving the slinger suction cup (43) to switch between a longitudinal movement and a tilting action.
  9. 9. The apparatus according to claim 6, characterized in that the pyrolysis mechanism (30) is in a longitudinally collinear arrangement with the recognition camera (22); The recognition camera (22), the photolysis mechanism (21) and the waste film recovery device (44) are arranged in the same straight line in the transverse direction.
  10. 10. The apparatus of claim 9, wherein the handling system drives the suction cups through a single axis actuator along the longitudinal or transverse line to effect the docked handling between adjacent processes.

Description

Secondary separation film tearing method and equipment for wafer for satellite solar cell Technical Field The invention relates to the technical field of semiconductor wafer processing and automatic equipment, in particular to a secondary separation film tearing method and equipment which are compatible with pyrolysis and photolysis double gluing logic and realize nondestructive separation of a flexible chip and a rigid silicon wafer, and particularly relates to a precise stripping technology for a satellite solar cell wafer. Background In the process of manufacturing a satellite solar cell wafer, in order to ensure that an ultrathin and extremely fragile flexible chip is not damaged in a complex process flow, a pyrolytic film (thermal release film) and a photolytic film (ultraviolet release film) are generally used to adhere the flexible chip to a rigid silicon wafer (supporting substrate). The double-layer film structure not only provides extremely high adhesive strength, but also plays a physical protection role. However, the existing film tearing technology has significant drawbacks: the peeling stress is overlarge, namely, a traditional roller film tearing or mechanical strong pulling can generate huge instantaneous shearing force at the peeling moment, so that the extremely thin flexible chip is subjected to microcracking or even fragmentation. The secondary separation capability is lost, that is, most of the existing equipment can only process a single-layer film, and continuous and differential stripping of a pyrolysis film and a photolysis film cannot be completed in the same process. Residual position uncertainty, namely after pyrolysis treatment, a pyrolysis film may be randomly left at the bottom of a chip or the top of a silicon wafer due to small difference of physical viscosity, and the existing automatic production line lacks an intelligent recognition and treatment mechanism for the random state, so that process blockage or secondary pollution is extremely easy to cause. Disclosure of Invention The present invention is directed to overcoming the shortcomings of the prior art and aims to provide a technical solution capable of solving the above problems. The invention provides a secondary separation and film tearing method of a wafer for a satellite solar cell, wherein a wafer original sheet comprises a rigid silicon wafer and a flexible chip which are bonded together through a pyrolytic film and a photolytic film, and the method comprises the following steps: The original piece is moved to a pyrolysis mechanism to carry out pyrolysis treatment so as to laminate the rigid silicon chip and the flexible chip; Position judgment and diversion treatment, namely visually identifying the bottom of the pyrolyzed flexible chip, and executing the following branch steps according to the judgment result: If the pyrolysis film is left at the bottom of the flexible chip, moving the flexible chip to a throwing position, stripping and recovering the pyrolysis film at the bottom of the flexible chip, and then executing step S3; If the pyrolysis film is not left at the bottom of the flexible chip, stripping and recycling the pyrolysis film left at the top of the silicon wafer at the pyrolysis mechanism, and executing a step S3 on the flexible chip; Photolysis treatment, namely moving the flexible chip without the pyrolytic film to a photolysis mechanism to carry out ultraviolet photolysis treatment; stripping and recycling the photolysis film at the bottom of the flexible chip after photolysis treatment; And (3) collecting finished products, namely moving the flexible chip after the membrane is peeled to a discharging mechanism for collection. Further, the method also comprises the following steps before the step S1: the raw sheet is grabbed from the feeding mechanism through the first carrying mechanism and sent to the centering mechanism for centering treatment; And step S5, recycling the silicon chips remained at the pyrolysis mechanism into the feeding mechanism through the first carrying mechanism. The process of stripping the pyrolytic film in the step S2.1 further comprises the steps that a third carrying mechanism drives a third sucker adsorbed with the flexible chip to descend, the flexible chip is placed on a material throwing sucker of a material throwing mechanism, the material throwing sucker adsorbs the pyrolytic film, and the third sucker keeps adsorbing the flexible chip and ascends to separate the pyrolytic film from the flexible chip. The process of recycling the pyrolytic films in the step S2.2 further comprises the steps that the pyrolytic films are adsorbed and fixed by the pyrolytic mechanisms, the pyrolytic films at the tops of the silicon wafers are adsorbed and peeled upwards by the second suckers of the second conveying mechanisms, and the pyrolytic films are transferred to the material throwing suckers of the material throwing mechanism by the second conveying mechanisms to be recyc