CN-122003128-A - Wafer adsorption carrier plate

CN122003128ACN 122003128 ACN122003128 ACN 122003128ACN-122003128-A

Abstract

The application provides a wafer adsorption carrier plate which comprises a first plate body, a second plate body and an external air exhaust device, wherein the first plate body is provided with a first air passage and a second air passage which are mutually independent, a first air exhaust hole is formed in the radial end part of the first air passage, which is positioned in the center of the first plate body, the second air passage extends along the circumferential direction of the first plate body, a plurality of second air exhaust holes are formed in the second air passage, the second air passage is positioned on the outer side of the first air passage in the radial direction, the second plate body is arranged below the first plate body, an air exhaust passage is arranged on the second plate body, the air exhaust passage is communicated with the plurality of second air exhaust holes, a third air exhaust hole is formed in the radial end part of the air exhaust passage, which is positioned in the center of the second plate body, and is communicated with the first air exhaust hole, and the third air exhaust hole is communicated with the external air exhaust device. The wafer adsorption carrier plate can stably adsorb wafers with edge warpage.

Inventors

YAO LIYING
WANG CHUANDAO
ZENG QIANG
ZHANG WENWEN

Assignees

研微(江苏)半导体科技有限公司

Dates

Publication Date: 20260508
Application Date: 20260212

Claims (10)

1. A wafer adsorption carrier plate, which comprises a carrier plate, characterized by comprising the following steps: The first disk body is provided with a first air passage and a second air passage which are mutually independent, a first air pumping hole is arranged at the radial end part of the first air passage positioned at the center of the first disk body, the second air passage extends along the circumferential direction of the first disk body, a plurality of second air pumping holes are arranged in the second air passage, the second air passage is positioned at the outer side of the first air passage in the radial direction, and The second disk body sets up the below of first disk body, the second disk body is provided with the extraction air channel, the extraction air channel with a plurality of second bleed holes intercommunication, the extraction air channel is located the radial tip at second disk body center is equipped with the third bleed hole, the third bleed hole with first bleed hole intercommunication, the third bleed hole communicates to outside air extraction device.
2. The wafer chucking plate of claim 1, wherein the suction path comprises an annular suction path and a radial suction path, the plurality of second suction holes in communication with the annular suction path.
3. The wafer suction carrier of claim 2, wherein the third pumping holes are disposed at radial ends of the radial pumping channels at a center of the second disk body.
4. The wafer chucking carrier of claim 1, wherein said first gas path comprises an annular groove and a radial groove in communication with each other, said first suction hole being disposed at a radial end of said radial groove at a center of said first disk body.
5. The wafer chucking apparatus of claim 4, wherein a cross-sectional area of said radial groove decreases radially from inside to outside.
6. The wafer chucking apparatus of claim 5, wherein a depth of said radial groove tapers radially from inside to outside and/or a width of said radial groove tapers radially from inside to outside.
7. The wafer chucking carrier of claim 4, wherein said annular grooves and said radial grooves have a width in the range of 2mm to 3mm and a depth in the range of 1mm to 2mm.
8. The wafer chucking apparatus of claim 4, wherein said number of annular grooves is 3-5, and said number of radial grooves is 3-18.
9. The wafer chucking carrier of claim 4, wherein adjacent ones of said annular grooves are radially spaced apart by a distance of from 30mm to 60mm.
10. The wafer suction carrier of claim 4, wherein the radial grooves comprise a first radial groove and a second radial groove, wherein the first radial groove has a length greater than a length of the second radial groove, the first suction hole is disposed at a radial end of the first radial groove at a center of the first disk body, and the second radial groove is connected between at least two of the annular grooves.

Description

Wafer adsorption carrier plate Technical Field The application mainly relates to the technical field of semiconductors, in particular to a wafer adsorption carrier disc. Background In semiconductor manufacturing process equipment, wafers are often fixedly disposed in a heated tray. The heating tray is used for heating the wafer while carrying the wafer. In general, the wafer is fixed by adsorption, including vacuum adsorption and electrostatic adsorption. The principle of vacuum adsorption is to rely on the force generated by the pressure difference between the front and back sides of the wafer to fix the wafer on the heating tray. The wafer is fixed on the heating tray, so that the wafer can be prevented from sliding on the heating tray. In addition, the wafer is tightly attached to the heating tray, so that better heat conduction can be obtained, and a better film deposition effect can be obtained. However, the wafer may undergo edge warpage during heating. Under the low temperature condition, the warping of the edge of the wafer is not serious, so that the vacuum chuck can adsorb the wafer under the condition of smaller adsorption force. However, when the process temperature is high, for example, exceeds 650 ℃, the degree of warpage of the wafer edge is large, so that the distance between the wafer edge and the heating tray is large, a micro-leakage phenomenon occurs at the wafer edge, process gas enters the back surface of the wafer, deposition marks occur on the back surface of the wafer, and the phenomenon that the wafer is not adsorbed easily occurs with the increase of the film thickness. Thus, not only is the risk of slip sheets increased, but also heat transfer is affected, resulting in deterioration of film formation quality. Disclosure of Invention The present application is directed to the above-mentioned problems, and provides a wafer suction carrier capable of stably sucking a wafer having an edge warpage. The wafer adsorption carrier comprises a first disc body, a plurality of second air suction holes are formed in the second air passage, the second air passage is located on the outer side of the first air passage in the radial direction, an air suction passage is arranged below the first disc body, the air suction passage is communicated with the plurality of second air suction holes, a third air suction hole is formed in the radial end portion of the air suction passage, located at the center of the second disc body, of the second air passage, the third air suction hole is communicated with the first air suction hole, and the third air suction hole is communicated to an external device. In one embodiment of the present application, the pumping channel comprises an annular pumping channel and a radial pumping channel, and the plurality of second pumping holes are communicated with the annular pumping channel. In an embodiment of the application, the third air extraction hole is arranged at a radial end part of the radial air extraction channel, which is positioned at the center of the second disc body. In an embodiment of the present application, the first air passage includes an annular groove and a radial groove that are in communication with each other, and the first air extraction hole is disposed at a radial end portion of the radial groove located at a center of the first disk body. In an embodiment of the present application, the cross-sectional area of the radial groove gradually decreases from inside to outside in the radial direction. In an embodiment of the application, the depth of the radial groove decreases gradually from inside to outside in the radial direction, and/or the width of the radial groove decreases gradually from inside to outside in the radial direction. In one embodiment of the application, the annular groove and the radial groove have a width in the range of 2mm-3mm and a depth in the range of 1mm-2mm. In an embodiment of the application, the number of annular grooves is 3-5 and the number of radial grooves is 3-18. In one embodiment of the present application, the radial distance between adjacent annular grooves is 30mm-60mm. In an embodiment of the present application, the radial grooves include a first radial groove and a second radial groove, wherein a length of the first radial groove is greater than a length of the second radial groove, the first pumping hole is disposed at a radial end portion of the first radial groove located at a center of the first disk body, and the second radial groove is connected between at least two annular grooves. According to the wafer adsorption carrier, the first air passage and the second air passage which are mutually independent are arranged on the first tray body, when vacuum adsorption is carried out, gas flows into the first air suction hole through the first air passage, meanwhile, gas also flows into the air suction hole of the second tray body through the second air suction hole in the second air passage at the out