CN-122003133-A - Solder thickness determination method, device, electronic apparatus, chip, and storage medium

Abstract

The disclosure relates to a solder thickness determining method, a device, electronic equipment, a chip and a storage medium, and belongs to the technical field of semiconductors. The method comprises the steps of determining a target packaging type of the power semiconductor, determining thickness information of a component structure with a fixed height in the power semiconductor according to the target packaging type, determining the target height of the power semiconductor, wherein the target height is the distance between a designated surface in the power semiconductor and a welded surface of a radiator, the designated surface is the surface farthest from the welded surface in the power semiconductor under the target packaging type, and determining the solder thickness of a solder layer according to the target height and the thickness information. The nondestructive detection of the thickness of the solder layer of the power semiconductor module can be realized, the product is not required to be cut open to observe the thickness of the solder layer, the phenomenon that the detection module is scrapped due to monitoring is avoided, the detection cost is reduced, the detection aging is improved, and the nondestructive detection can be performed, so that the mass sampling or full detection can be performed, and the overall production quality can be ensured.

Inventors

• LU YINGYA
• WANG JIUHUI
• WANG ZILING
• MAO SEN
• LAN XIANG
• XU LIMING

Assignees

• 小米汽车科技有限公司

Dates

Publication Date

20260508

Application Date

20251231

Claims (20)

1. 1. A solder thickness determining method, which is applicable to a power semiconductor module including a heat sink, a solder layer for fixing the power semiconductor to the heat sink, and a power semiconductor, the method comprising: determining a target packaging type of the power semiconductor; Determining thickness information of a component structure with a fixed height in the power semiconductor according to the target packaging type; Determining a target height of the power semiconductor, wherein the target height is a distance between a designated surface in the power semiconductor and a surface to be welded of the heat sink, and the designated surface is a surface farthest from the surface to be welded in the power semiconductor under the target packaging type; and determining the solder thickness of the solder layer according to the target height and the thickness information.
2. 2. The method of claim 1, wherein determining thickness information of a constituent structure having a fixed height in the power semiconductor according to the target package type comprises: determining a first thickness of a substrate and a second thickness of a plastic package body in the power semiconductor in response to the target package type being a first package type; the plastic package body is used for packaging the substrate, and the first packaging type is a type that the substrate is completely covered by the plastic package body.
3. 3. The method of claim 2, wherein the designated surface is a top surface of the molded body and a shortest distance from the top surface of the molded body to the surface to be welded is the target height.
4. 4. A method according to claim 2 or 3, wherein said determining a solder thickness of said solder layer based on said target height and said thickness information comprises: acquiring a first accumulated thickness corresponding to the first thickness and the second thickness; and obtaining a first difference value between the target height and the first accumulated thickness as the solder thickness of the solder layer.
5. 5. The method of claim 1, wherein determining thickness information of a constituent structure having a fixed height in the power semiconductor according to the target package type comprises: Determining a first thickness of a substrate in the power semiconductor in response to the target package type being a second package type; The power semiconductor further comprises a plastic package body, wherein the plastic package body is used for packaging the substrate, and the second packaging type is a type that a part of area on the upper surface of the substrate is not covered by the plastic package body.
6. 6. The method of claim 5, wherein the designated surface is a surface area of the upper surface of the substrate that is not covered by a molding compound, and the shortest distance from the surface area that is not covered by a molding compound to the surface to be soldered is the target height.
7. 7. The method of claim 5 or 6, wherein said determining a solder thickness of said solder layer based on said target height and said thickness information comprises: And obtaining a second difference value between the target height and the first thickness of the substrate as the solder thickness of the solder layer.
8. 8. The method of claim 1, wherein determining thickness information of a constituent structure having a fixed height in the power semiconductor according to the target package type comprises: Determining a first thickness of a substrate, a third thickness of a device solder layer, and a fourth thickness of a device in the power semiconductor in response to the target package type being a third package type; The power semiconductor comprises a plastic package body, wherein the plastic package body is used for packaging the substrate, the device is fixed on the upper surface of the substrate through the device solder layer, and the third packaging type is a packaging type in which the device solder layer is covered by the plastic package body completely, but the upper surface of the device is not covered by the plastic package body.
9. 9. The method of claim 8, wherein the designated surface is a top surface of the device and a shortest distance of the top surface of the device to the surface to be soldered is a target height.
10. 10. The method according to claim 8 or 9, wherein said determining a solder thickness of the solder layer based on the target height and the thickness information comprises: Acquiring a second accumulated thickness of the first thickness, the third thickness and the fourth thickness; and obtaining a third difference value between the target height and the second accumulated thickness as the solder thickness of the solder layer.
11. 11. The method of any one of claims 1-3, 5, 6, 7, or 8, further comprising: Measuring a plurality of measuring positions on the appointed surface to obtain a target height corresponding to each measuring position; and determining the solder thickness corresponding to each measuring position as the solder thickness of the solder layer based on the target height of each measuring position and the thickness information.
12. 12. The method of claim 11, wherein a plurality of chips are disposed in the power semiconductor, and wherein after determining the solder thickness corresponding to each measurement location based on the target height and the thickness information of each measurement location, further comprising: Determining a target measurement position corresponding to the chip from the plurality of measurement positions; And carrying out fusion analysis on the solder thickness corresponding to the target measurement position, and determining the solder thickness below the chip.
13. 13. The method of any of claims 1-3, 5, 6, 7, or 8, wherein the determining the target package type of the power semiconductor module comprises: Determining model information of the power semiconductor module; And determining the target packaging type of the power semiconductor module according to the model information of the power semiconductor module.
14. 14. The method of any one of claims 1-3, 5,6, 7, or 8, wherein after the determining the solder thickness of the solder layer, further comprising: Determining a standard solder thickness range corresponding to the power semiconductor module according to the model information of the power semiconductor module; And determining the power semiconductor module as an abnormal power semiconductor module in response to the solder thickness not being in the solder thickness range, and/or carrying out abnormal prompt on the abnormal power semiconductor module.
15. 15. A solder thickness determining apparatus, characterized by being applied to a power semiconductor module including a heat sink, a solder layer for fixing the power semiconductor to the heat sink, and a power semiconductor, the apparatus comprising: a first determining module configured to perform determining a target package type of the power semiconductor module; a second determining module configured to perform determining thickness information of a constituent structure having a fixed height in the power semiconductor according to the target package type; a third determining module configured to perform determining a target height of the power semiconductor module, wherein the target height is a distance between a designated surface in the power semiconductor module and a surface to be soldered of the heat spreader, the designated surface being a surface of the power semiconductor of the target package type that is farthest from the surface to be soldered; And a fourth determination module configured to perform determination of a solder thickness of the solder layer based on the target height and the thickness information.
16. 16. The apparatus of claim 15, wherein the second determination module is further configured to perform determining a first thickness of a substrate and a second thickness of a molded body within the power semiconductor module in response to the target package type being a first package type; the plastic package body is used for packaging the substrate, and the first packaging type is a type that the substrate is completely covered by the plastic package body.
17. 17. The apparatus of claim 16, wherein the designated surface is a top surface of the molded body and a shortest distance from the top surface of the molded body to the surface to be welded is the target height.
18. 18. The apparatus of claim 16 or 17, wherein the fourth determination module is further configured to perform obtaining a first cumulative thickness corresponding to the first thickness and the second thickness, and obtaining a first difference between the target height and the first cumulative thickness as the solder thickness of the solder layer.
19. 19. The apparatus of claim 15, wherein the second determination module is further configured to perform determining a first thickness of a substrate within the power semiconductor module in response to the target package type being a second package type; The power semiconductor further comprises a plastic package body, wherein the plastic package body is used for packaging the substrate, and the second packaging type is a type that a part of area on the upper surface of the substrate is not covered by the plastic package body.
20. 20. The apparatus of claim 19, wherein the designated surface is a surface area of the upper surface of the substrate that is not covered by a molding compound, and a shortest distance from the surface area that is not covered by the molding compound to the surface to be soldered is the target height.

Description

Solder thickness determination method, device, electronic apparatus, chip, and storage medium Technical Field The present disclosure relates to the field of semiconductor technologies, and in particular, to a method and apparatus for determining a thickness of solder, an electronic device, a chip, and a storage medium. Background The core function of the power semiconductor module converts direct current of the high-voltage battery into alternating current to be supplied to the driving motor, and a large amount of heat is generated by larger current when the power semiconductor module works, and needs to be taken away by a radiator in the power semiconductor module. In the related art, a radiator in a power semiconductor module can be connected with a power semiconductor in a brazing manner, and the welding thickness often influences the performance and service life of a product, for example, the welding thickness is too thick, the thermal resistance is large, the product performance is low, the welding thickness is too thin, the welding stress is large, and the radiator is easy to crack due to thermal stress in long-term use, so that heat conduction is poor, and the product performance is attenuated. Therefore, the solder thickness of the power semiconductor module is a focus, and how to perform nondestructive inspection on the solder thickness is a hot spot of research. Disclosure of Invention The present disclosure provides a solder thickness determination method, apparatus, electronic device, chip, and storage medium to at least realize nondestructive testing of solder thickness in a power semiconductor module. The technical scheme of the present disclosure is as follows: According to a first aspect of embodiments of the present disclosure, there is provided a solder thickness determining method, adapted for a power semiconductor module including a heat spreader, a solder layer, and a power semiconductor, the solder layer being used to fix the power semiconductor to the heat spreader, the method comprising: Determining a target packaging type of the power semiconductor module; determining thickness information of a component structure with a fixed height in the power semiconductor according to the target packaging type; determining a target height of the power semiconductor, wherein the target height is a distance between a designated surface in the power semiconductor and a surface to be welded of the heat sink, and the designated surface is a surface farthest from the surface to be welded in the power semiconductor under the target packaging type; and determining the solder thickness of the solder layer according to the target height and the thickness information. According to a second aspect of the embodiments of the present disclosure, there is provided a solder thickness determining apparatus adapted for a power semiconductor module including a heat sink, a solder layer for fixing the power semiconductor to the heat sink, and a power semiconductor, the apparatus comprising: a first determination module configured to perform determining a target package type of the power semiconductor; a second determining module configured to perform determining thickness information of a constituent structure having a fixed height in the power semiconductor according to the target package type; A third determining module configured to perform determining a target height of the power semiconductor, wherein the target height is a distance between a designated surface in the power semiconductor module and a surface to be soldered of the heat spreader, the designated surface being a surface of the power semiconductor that is farthest from the surface to be soldered in the target package type; And a fourth determination module configured to perform determination of a solder thickness of the solder layer based on the target height and the thickness information. According to a third aspect of embodiments of the present disclosure, there is provided an electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the steps of the solder thickness determination method according to the first to third aspects of embodiments of the present disclosure when the program is executed by the processor. According to a fourth aspect of embodiments of the present disclosure, there is provided a computer readable storage medium having stored thereon computer program instructions which, when executed by a processor, implement the steps of the solder thickness determination method according to the first to third aspects of embodiments of the present disclosure. According to a fifth aspect of embodiments of the present disclosure, there is provided a chip comprising an interface circuit for inputting or outputting a signal and a processing circuit coupled to each other, the processing circuit being configured to implement the steps of the solder t