CN-122003134-A - Wafer warpage prediction method, device, equipment and storage medium

CN122003134ACN 122003134 ACN122003134 ACN 122003134ACN-122003134-A

Abstract

The application provides a wafer warpage prediction method, device, equipment and storage medium. The method comprises the steps of determining a finite element warping prediction model of a wafer to be predicted, wherein at least one metal interconnection layer is arranged on the wafer to be predicted, obtaining equivalent internal stress of the metal interconnection layer for any metal interconnection layer in the at least one metal interconnection layer, and predicting a target warping value corresponding to the wafer to be predicted according to the equivalent internal stress corresponding to each metal interconnection layer and the finite element warping prediction model.

Inventors

CHEN LIYI
LIANG JIANING
PENG HAOYANG
JIANG ZHONGKAI

Assignees

湖北江城实验室

Dates

Publication Date: 20260508
Application Date: 20260123

Claims (12)

1. A method for predicting wafer warpage, comprising: determining a finite element warping prediction model of a wafer to be predicted, wherein at least one metal interconnection layer is arranged on the wafer to be predicted; for any one of the at least one metal interconnect layer, obtaining an equivalent internal stress of the metal interconnect layer; And predicting a target warpage value corresponding to the wafer to be predicted according to the equivalent internal stress corresponding to each metal interconnection layer and the finite element warpage prediction model.
2. The method of claim 1, wherein the metal interconnect layer comprises a metal sub-layer and a dielectric sub-layer, and wherein the obtaining the equivalent internal stress of the metal interconnect layer comprises: obtaining a first deflection generated under the internal metallic stress of the metallic sub-layer; obtaining a second deflection generated under the internal dielectric stress of the dielectric sublayer; Obtaining the equivalent internal stress according to the first deflection, the second deflection and an equivalent deflection coefficient, wherein the equivalent deflection coefficient is used for reflecting the warping degree generated by the metal interconnection layer under unit internal stress.
3. The method according to claim 2, wherein said obtaining a first deflection generated under the metallic internal stress of said metallic sub-layer comprises: Obtaining a metal deflection coefficient of the metal sub-layer, and determining the product of the metal deflection coefficient and the metal internal stress as the first deflection.
4. A method according to claim 3, wherein said obtaining a metal deflection coefficient of said metal sub-layer comprises: Obtaining a first basic parameter of the wafer to be predicted, wherein the first basic parameter comprises the diameter, the first thickness and the Young's modulus of the substrate of the wafer to be predicted; Obtaining a second basic parameter of the metal sub-layer, wherein the second basic parameter comprises a second thickness of the metal interconnection layer, a first volume of the metal sub-layer on the wafer to be predicted and a metal Young modulus; And obtaining the metal deflection coefficient according to the diameter, the first thickness, the Young's modulus of the substrate, the second thickness, the first volume and the Young's modulus of the metal.
5. The method of claim 4, wherein the deriving the metal deflection coefficient from the diameter, the first thickness, the young's modulus of the substrate, the second thickness, the first volume, and the young's modulus of the metal comprises determining a quotient of a first value and a second value as the metal deflection coefficient, wherein the first value is derived from the diameter, the first volume, the first thickness, and the second value is derived from the first thickness, the second thickness, the young's modulus of the substrate, and the young's modulus of the metal.
6. The method according to claim 2, wherein said obtaining a second deflection generated under the in-medium stress of said mesogen layer comprises: obtaining a medium deflection coefficient of the medium sub-layer, and determining the product of the medium deflection coefficient and the internal stress of the medium as the second deflection; the medium deflection coefficient is obtained according to a first basic parameter of the wafer to be predicted and a third basic parameter of the medium sub-layer, wherein the first basic parameter comprises the diameter, the first thickness and the Young's modulus of a substrate of the wafer to be predicted, and the third basic parameter comprises the second thickness of the metal interconnection layer, the second volume of the medium sub-layer on the wafer to be predicted and the Young's modulus of the medium.
7. The method according to any one of claims 2 to 6, wherein said obtaining said equivalent internal stress from said first deflection, said second deflection and equivalent deflection coefficients comprises: And determining the quotient of the sum of the first deflection and the second deflection and the equivalent deflection coefficient as the equivalent internal stress, wherein the equivalent deflection coefficient is obtained according to the diameter, the first thickness and the Young modulus of the substrate of the wafer to be predicted, and the second thickness and the equivalent Young modulus of the metal interconnection layer.
8. The method of claim 7, wherein the wafer to be predicted is divided into a plurality of grids, wherein predicting the target warpage value for the wafer to be predicted based on the equivalent internal stress for each metal interconnect layer and the finite element warpage prediction model, comprises: the equivalent internal stress corresponding to each metal interconnection layer is respectively applied to a corresponding sub-finite element model in the finite element warping prediction model to obtain a sub-strain capacity corresponding to each grid; obtaining deformation patterns generated by the wafer to be predicted under the equivalent internal stress according to each sub-strain; and calculating the target warpage value under each equivalent internal stress according to the deformation image.
9. The method of claim 8, wherein obtaining a deformation pattern generated by the wafer to be predicted under each equivalent internal stress according to each sub-strain amount comprises fitting sub-strain amounts corresponding to each grid to form the deformation pattern; Correspondingly, calculating the target warpage value under each equivalent internal stress according to the deformation image comprises analyzing displacement data or curvature data of each sampling point in the deformation image, and extracting the maximum displacement value or maximum curvature as the target warpage value.
10. A wafer warp prediction apparatus, comprising: The determining module is used for determining a finite element warping prediction model of a wafer to be predicted, wherein at least one metal interconnection layer is arranged on the wafer to be predicted; and a prediction module for For any one of the at least one metal interconnect layer, obtaining an equivalent internal stress of the metal interconnect layer; And predicting a target warpage value corresponding to the wafer to be predicted according to the equivalent internal stress corresponding to each metal interconnection layer and the finite element warpage prediction model.
11. A wafer warp prediction apparatus, comprising: A memory for storing computer executable instructions or computer programs; And a processor for implementing the prediction method of any one of claims 1 to 9 when executing the computer executable instructions or computer programs stored in the memory.
12. A computer readable storage medium, having stored thereon computer executable instructions or a computer program for implementing the prediction method of any of claims 1 to 9 when executed by a processor.

Description

Wafer warpage prediction method, device, equipment and storage medium Technical Field The present application relates to the field of semiconductor manufacturing and detecting technologies, and in particular, to a wafer warpage prediction method, apparatus, device, and storage medium. Background Wafer warpage is an important factor affecting semiconductor device performance and yield in semiconductor manufacturing processes. As the integration of semiconductor devices increases, multilayer metal interconnect structures and various materials are applied to semiconductor devices. However, differences in the coefficients of thermal expansion (CTE, coefficient of Thermal Expansion) between the various materials and the build-up of internal stresses between the various materials can result in different degrees of wafer warpage during processing. Currently, a combination of Timoshenko double layer theory and finite element analysis is often adopted to predict wafer warpage through the stress-free temperature of an equivalent redistribution layer (RDL). However, when the method is faced with high-density metal proportion, multilayer interconnection structure and complex dielectric material combination, the influence of the actual internal stress state on warpage is difficult to accurately reflect, and particularly, obvious defects exist in the aspect of evaluating integral warpage change caused by internal stress mismatch among different materials. Disclosure of Invention The embodiment of the application provides a wafer warpage prediction method, device, equipment and storage medium, which can solve the problem that the influence of dielectric materials and metal materials on warpage in a multilayer metal interconnection structure is difficult to evaluate in the prior art. The technical scheme of the embodiment of the application is realized as follows: The embodiment of the application provides a wafer warpage prediction method, which comprises the steps of determining a finite element warpage prediction model of a wafer to be predicted, wherein at least one metal interconnection layer is arranged on the wafer to be predicted, obtaining equivalent internal stress of the metal interconnection layer for any metal interconnection layer in the at least one metal interconnection layer, and predicting a target warpage value corresponding to the wafer to be predicted according to the equivalent internal stress corresponding to each metal interconnection layer and the finite element warpage prediction model. The embodiment of the application provides a wafer warpage prediction device which comprises a determination module, a prediction module and a prediction module, wherein the determination module is used for determining a finite element warpage prediction model of a wafer to be predicted, at least one metal interconnection layer is arranged on the wafer to be predicted, the prediction module is used for obtaining equivalent internal stress of any metal interconnection layer in the at least one metal interconnection layer, and a target warpage value corresponding to the wafer to be predicted is predicted according to the equivalent internal stress corresponding to each metal interconnection layer and the finite element warpage prediction model. The embodiment of the application provides equipment for predicting wafer warpage, which comprises the following components: A memory for storing computer executable instructions or computer programs; And the processor is used for realizing the prediction method provided by the embodiment of the application when executing the computer executable instructions or the computer programs stored in the memory. The embodiment of the application provides a computer readable storage medium, which stores a computer program or computer executable instructions for realizing the prediction method provided by the embodiment of the application when being executed by a processor. The embodiment of the application provides a computer program product, which comprises a computer program or a computer executable instruction, and the computer program or the computer executable instruction realize the prediction method provided by the embodiment of the application when being executed by a processor. The embodiment of the application has the beneficial effects that the influence of different materials and different structures on wafer warpage in the actual manufacturing process can be reflected more accurately by constructing the finite element warpage prediction model and calculating the equivalent internal stress of each metal interconnection layer. Further, the equivalent internal stress is used as an input parameter to be substituted into the finite element model for warp prediction, so that the problem of errors caused by neglecting internal stress differences in the traditional stress-free temperature equivalent mode can be avoided, and the warp prediction accuracy is improved. The method is p